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    • 3. 发明申请
    • COLLECTOR FOR EUV LIGHT SOURCE
    • EUV光源收集器
    • WO2004092693A2
    • 2004-10-28
    • PCT/US2004/010972
    • 2004-04-07
    • CYMER, INC.PARTLO, William, N.ALGOTS, J., MartinBLUMENSTOCK, Gerry, M.BOWERING, NorbertERSHOV, Alexander, I.FOMENKOV, Igor, V.PAN, Xiaojiang, J.
    • PARTLO, William, N.ALGOTS, J., MartinBLUMENSTOCK, Gerry, M.BOWERING, NorbertERSHOV, Alexander, I.FOMENKOV, Igor, V.PAN, Xiaojiang, J.
    • G01J
    • H05G2/001B82Y10/00G03F7/70033G03F7/70175G03F7/70916G21K1/062
    • A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism. The gas is maintained at a pressure that in part determines the selected energy peak and the stimulating mechanism may create an influx of ions of the sputtering ion material that creates a sputter density of atoms of the second material from the reflector surface that equals or exceeds the influx rate of the plasma debris atoms of the second material. A sputtering rate may be selected for a given desired life of the reflecting surface. The reflecting surface may be capped. The collector may comprise an elliptical mirror and a debris shield which may comprise radially extending channels. The first material may be molybdenum, the second lithium and the ion material may be helium. The system may have a heater to evaporate the second material from the reflecting surface. The stimulating mechanism may be connected to the reflecting surface between ignition times. The reflecting surface may have barrier layers. The collector may be a spherical mirror in combination with grazing angle of incidence reflector shells, which may act as a spectral filter by selection of the layer material for multi-layer stacks on the reflector shells. The sputtering can be in combination with heating, the latter removing the lithium and the former removing compounds of lithium, and the sputtering may be by ions produced in the plasma rather than excited gas atoms.
    • 公开了一种用于从EUV光源中的EUV收集器的反射表面去除碎片的方法和装置,其可以包括反射表面,其包括第一材料,并且所述碎屑包括第二材料和/或第二材料的化合物,所述系统 并且方法可以包括受控的溅射离子源,其可以包括包含溅射离子材料的原子的气体; 以及将溅射离子材料的原子激发成离子化状态的刺激机构,所选择的离子化状态具有围绕选择的能量峰的分布,其具有溅射第二材料的可能性很高,并且溅射的可能性非常低 材料。 刺激机构可以包括RF或微波感应机构。 气体保持在部分地决定所选择的能量峰值的压力下,并且刺激机构可以产生溅射离子材料的离子的流入,其从反射器表面产生第二材料的原子的溅射密度等于或超过 第二种材料的等离子体碎片原子的流入速率。 可以在反射表面的给定期望寿命期间选择溅射速率。 反射面可以被盖住。 收集器可以包括椭圆镜和可包括径向延伸通道的碎片屏蔽。 第一材料可以是钼,第二锂和离子材料可以是氦。 该系统可以具有从反射表面蒸发第二材料的加热器。 刺激机构可以在点火时间之间连接到反射表面。 反射表面可以具有阻挡层。 收集器可以是与入射反射器壳的掠射角组合的球面镜,其可以通过选择反射器壳体上的多层堆叠的层材料来充当光谱滤光器。 溅射可以与加热相结合,后者除去锂和前者除去锂的化合物,并且溅射可以是在等离子体中产生的离子而不是被激发的气体原子。
    • 4. 发明申请
    • DISCHARGE PRODUCED PLASMA EUV LIGHT SOURCE
    • 排放生产等离子体光源
    • WO2004081503A2
    • 2004-09-23
    • PCT/US2004/006551
    • 2004-03-03
    • CYMER, INC.PARTLO, William, N.BLUMENSTOCK, Gerry, M.BOWERING, NorbertBRUZZONE, Kent, A.COBB, Dennis, W.DYER, Timothy, S.DUNLOP, JohnFOMENKOV, Igor, V.HYSHAM, James, ChristopherOLIVER, Roger, I.PALENSCHAT, Frederick, A.PAN, Xiaojiang, J.RETTIG, Curtis, L.SIMMONS, Rodney, S.WALKER, JohnWEBB, Kyle, R.HOFMANN, Thomas
    • PARTLO, William, N.BLUMENSTOCK, Gerry, M.BOWERING, NorbertBRUZZONE, Kent, A.COBB, Dennis, W.DYER, Timothy, S.DUNLOP, JohnFOMENKOV, Igor, V.HYSHAM, James, ChristopherOLIVER, Roger, I.PALENSCHAT, Frederick, A.PAN, Xiaojiang, J.RETTIG, Curtis, L.SIMMONS, Rodney, S.WALKER, JohnWEBB, Kyle, R.HOFMANN, Thomas
    • G01J
    • H01S3/005B82Y10/00G03F7/70033G03F7/70166G03F7/70175G03F7/70908G03F7/70916H01S3/225H05G2/003H05G2/005H05H1/06
    • An DPP EUV source is disclosed which may comprise a debris mitigation apparatus employing a metal halogen gas producing a metal halide from debris exiting the plasma. The EUV source may have a debris shield that may comprise a plurality of curvilinear shield members having inner and outer surfaces connected by light passages aligned to a focal point, which shield members may be alternated with open spaces between them and may have surfaces that form a circle in one axis of rotation and an ellipse in another. The electrodes may be supplied with a discharge pulse shaped to produce a modest current during the axial run out phase of the discharge and a peak occurring during the radial compression phase of the discharge. The light source may comprise a turbomolecular pump having an inlet connected to the generation chamber and operable to preferentially pump more of the source gas than the buffer gas from the chamber. The source may comprise a tuned electrically conductive electrode comprising: a differentially doped ceramic material doped in a first region to at least select electrical conductivity and in a second region at least to select thermal conductivity. The first region may be at or near the outer surface of the electrode structure and the ceramic material may be SiC or alumina and the dopant is BN or a metal oxide, including SiO or TiO 2 . The source may comprise a moveable electrode assembly mount operative to move the electrode assembly mount from a replacement position to an operating position, with the moveable mount on a bellows. The source may have a temperature control mechanism operatively connected to the collector and operative to regulate the temperature of the respective shell members to maintain a temperature related geometry optimizing the glancing angle of incidence reflections from the respective shell members, or a mechanical positioner to position the shell members. The shells may be biased with a voltage. The debris shield may be fabricated using off focus laser radiation. The anode may be cooled with a hollow interior defining two coolant passages or porous metal defining the passages. The debris shield may be formed of pluralities of large, intermediate and small fins attached either to a mounting ring or hub or to each other with interlocking tabs that provide uniform separation and strengthening and do not block any significant amount of light.
    • 公开了一种DPP EUV源,其可以包括使用从离开等离子体的碎片产生金属卤化物的金属卤素气体的碎片减缓装置。 EUV源可以具有碎片屏蔽,其可以包括多个曲线屏蔽构件,其具有通过与焦点对准的光通道连接的内表面和外表面,该屏蔽构件可以与它们之间的开放空间交替,并且可以具有形成 在一个旋转轴上的圆圈和另一个轴上的椭圆。 电极可以被供给放电脉冲,该放电脉冲在放电的轴向耗尽阶段期间产生适度的电流,并且在放电的径向压缩阶段期间发生峰值。 光源可以包括涡轮分子泵,其具有连接到发电室的入口,并且可操作以比来自该室的缓冲气体优先地泵送更多的源气体。 源可以包括调谐的导电电极,包括:掺杂在第一区域中以至少选择电导率的差分掺杂陶瓷材料,并且在第二区域中至少选择导热性。 第一区域可以在电极结构的外表面处或附近,并且陶瓷材料可以是SiC或氧化铝,并且掺杂剂是BN或包括SiO或TiO 2的金属氧化物。 源可以包括可移动电极组件安装件,其可操作以将电极组件安装座从更换位置移动到操作位置,可移动安装件在波纹管上。 源可以具有可操作地连接到收集器的温度控制机构,并且可操作地调节相应壳体部件的温度,以保持温度相关几何形状优化来自相应外壳部件的入射反射的扫掠角,或机械定位器 壳成员。 壳可能会被电压偏置。 可以使用离焦激光辐射来制造碎片屏蔽。 阳极可以用限定两个冷却剂通道或限定通道的多孔金属的中空内部冷却。 碎片屏蔽可以由连接到安装环或轮毂的多个大的,中间的和小的翅片形成,或者彼此具有提供均匀分离和强化并且不阻挡任何显着量的光的互锁突起。