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1. 发明公开

KR20090073848A Cleaning composition for semiconductor device and cleaning method of semiconductor device using the same 审中-公开
标题翻译：用于半导体器件的清洁组合物和使用其的半导体器件的清洁方法
公开(公告)号：KR20090073848A
公开(公告)日：2009-07-03
申请号：KR20070141916
申请日：2007-12-31
申请人： CHEIL IND INC , SAMSUNG ELECTRONICS CO LTD
发明人： KO YONG SUN , YOON BYOUNG MOON , SON YOON HO , PARK JIN WOO , YANG HO SEOK , PARK MYUNG KOOK , LA JUNG IN , CHOI JUNG MIN
IPC分类号： C11D3/16 , C11D3/04 , C11D7/08
CPC分类号： C11D7/02 , C11D7/08 , C11D7/5004 , C11D11/0047 , H01L21/02057
摘要： A cleaning composition for a semiconductor device is provided to ensure excellent removal effect of etch residue, to minimize damages of underlayer, to prevent residues from being left even after performing a rinse process, and to improve productivity of a semiconductor manufacturing process. A cleaning composition for a semiconductor device comprises a fluoride compound 0.5-1.5 weight%, a water-soluble organic solvent 55-75 weight% and water 23.5-44.5 weight% and has pH of more than 8.0 and less than 8.5. A method for cleaning a semiconductor device comprises the steps of: forming a patterning target film on a semiconductor substrate; forming photoresist patterns on the object film to be patterned; etching the object film by using the photoresist pattern as a mask; and cleaning a semiconductor substrate of which the object film is etched, with the cleaning solution composition.
摘要翻译：提供了一种用于半导体器件的清洁组合物，以确保蚀刻残留物的优异的去除效果，以使底层的损伤最小化，以防止残留物甚至在进行漂洗过程之后残留，并提高半导体制造工艺的生产率。用于半导体器件的清洁组合物包含0.5-1.5重量％的氟化合物，55-75重量％的水溶性有机溶剂和23.5-44.5重量％的水，其pH值大于8.0且小于8.5。一种用于清洁半导体器件的方法包括以下步骤：在半导体衬底上形成图案化靶膜; 在待图案化的物体膜上形成光刻胶图案; 通过使用光致抗蚀剂图案作为掩模来蚀刻物体膜; 并用清洁溶液组合物清洗其中蚀刻有目标薄膜的半导体衬底。

2. 发明授权

KR100679270B1 PHASE-CHANGE RAM AND METHOD FOR MANUFACTURING THE SAME 无效
标题翻译：相变RAM及其制造方法
公开(公告)号：KR100679270B1
公开(公告)日：2007-01-30
申请号：KR20060008919
申请日：2006-01-27
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： LIM YOUNG SOO , KO YONG SUN , KWON HYUK JIN , HWANG JAE SEUNG
IPC分类号： H01L27/115
CPC分类号： H01L45/143 , H01L27/2436 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： A phase change memory device and its manufacturing method are provided to improve the yield by restraining the variation of resistance of a lower electrode due to a nonuniform thickness of a first hard mask layer. A first hard mask layer is previously removed from an upper portion of a semiconductor substrate(100), wherein the first hard mask layer is used in a contact pad forming process. An interlayer dielectric with a contact hole is formed on a contact pad obtained from the contact pad forming process. A lower electrode(128) with a predetermined thickness is electrically connected to the contact pad through the contact hole of the interlayer dielectric. A phase change layer and an upper electrode are then formed on the lower electrode.
摘要翻译：提供了一种相变存储器件及其制造方法，其通过抑制由于第一硬掩模层的厚度不均匀而导致的下部电极的电阻的变化来提高产量。预先从半导体衬底（100）的上部去除第一硬掩模层，其中第一硬掩模层用于接触焊盘形成工艺。在由接触垫形成工艺获得的接触垫上形成具有接触孔的层间电介质。具有预定厚度的下电极（128）通过层间电介质的接触孔与接触垫电连接。然后在下电极上形成相变层和上电极。

3. 发明公开

KR20200129840A 기판 건조 장치 审中-公开
公开(公告)号：KR20200129840A
公开(公告)日：2020-11-18
申请号：KR20190054832
申请日：2019-05-10
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： CHO YONG JHIN , KO YONG SUN , PARK KI BYUNG , PARK SANG JINE , SHIM WOO GWAN
IPC分类号： H01L21/67 , H01L21/687
摘要： 기판건조장치가제공된다. 본발명의실시예에따른기판건조장치는내부에공간이형성된공정챔버, 공정챔버의바닥면상에배치되어기판을지지하는냉각플레이트로, 내부에유로가형성되어기판의건조시에상면의온도가제1 온도이하로적용되는냉각플레이트, 공정챔버의상면상에배치되고, 기판의건조시에하면의온도가제2 온도이상으로적용되는가열플레이트, 공정챔버의상면을관통하여형성되어공정챔버의내부에제1 기체를공급하는제1 공급포트, 공정챔버의하면을관통하여형성되어제1 기체를공정챔버의외부로배기하는배기포트및 공정챔버의하면및 냉각플레이트를관통하여형성되고, 기판의하면에제2 기체를분사하도록구성되는제2 공급포트를포함한다.

4. 发明公开

KR20200141346A 광 조사 기반 웨이퍼 세정 장치 및 그 세정 장치를 포함한 웨이퍼 세정 시스템 审中-公开
公开(公告)号：KR20200141346A
公开(公告)日：2020-12-18
申请号：KR20190068277
申请日：2019-06-10
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： CHO BYUNG KWON , PARK SANG JINE , KO YONG SUN , JEON SEUL GEE , JEONG JI HOON , HONG SEONG SIK
IPC分类号： H01L21/67 , H01L21/02
摘要： 본발명의기술적사상은웨이퍼의손상없이웨이퍼상의잔류물을효과적으로세정할수 있는광 조사기반웨이퍼세정장치, 및그 세정장치를포함한웨이퍼세정시스템을제공한다. 그광 조사기반웨이퍼세정장치는광을웨이퍼로조사하는광 조사부; 상기웨이퍼가배치되고, 상기웨이퍼에설정된에너지의광이조사되도록상기웨이퍼의위치를조절하는웨이퍼처리부; 및광의조사가완료된상기웨이퍼를냉각하는냉각부;를포함하고, 상기광 조사부, 웨이퍼처리부, 및냉각부가수직구조로위에서부터순차적으로배치된다.

5. 发明公开

KR20180016841A 반도체 장치의 제조 방법 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：KR20180016841A
公开(公告)日：2018-02-20
申请号：KR20160100738
申请日：2016-08-08
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： PARK SANG JINE , KO YONG SUN , HWANG IN SEAK
IPC分类号： H01L21/768 , H01L21/027 , H01L29/66
CPC分类号： H01L21/28114 , H01L21/0337 , H01L21/28123 , H01L21/28132 , H01L27/0207 , H01L29/42376 , H01L29/4238 , H01L29/66795 , H01L29/7856
摘要： 미세한피치로더미게이트패턴을형성하는경우, 더미게이트패턴에발생할수 있는기울어짐을방지하는서포트부를형성하기위한반도체장치의제조방법을제공하기위한것이다. 상기반도체장치의제조방법은, 기판상에, 게이트층과, 맨드릴층을순차적으로형성하고, 상기맨드릴층상에제1 포토레지스트를형성하고, 상기제1 포토레지스트를마스크로이용하여, 상기맨드릴층의적어도일부를제거한맨드릴패턴을형성하되, 상기맨드릴패턴은제1 방향으로길게연장되고, 상기맨드릴패턴에포함된제1 맨드릴의일측에위치하는제1 맨드릴스페이서와상기제1 맨드릴의타측에위치하는제2 맨드릴스페이서를포함하는스페이서패턴을형성하고, 상기맨드릴패턴을제거한뒤, 상기제1 및제2 맨드릴스페이서를덮는희생층을형성하고, 상기희생층상에, 상기제1 맨드릴스페이서의일부및 제2 맨드릴스페이서의일부와오버랩되며, 상기제1 방향과교차하는제2 방향으로길게연장되는브릿지패턴을포함하는제2 포토레지스트를형성하고, 상기제1 및제2 맨드릴스페이서와상기제2 포토레지스트를마스크로이용하여, 상기게이트층의적어도일부를제거한게이트패턴을형성하는것을포함한다.
摘要翻译：一种制造半导体器件的方法包括：在衬底上顺序地形成栅极层和心轴层;在心轴层上形成第一光致抗蚀剂;通过使用第一光致抗蚀剂作为掩模至少部分地去除心轴层来形成心轴图案; 间隔物图案，其包括位于所述心轴图案中所包括的第一心轴的一侧上的第一心轴间隔物和位于所述第一心轴的另一侧上的第二心轴间隔物，形成牺牲层，所述牺牲层在所述第一心轴间隔物和所述第二心轴间隔物之后去除所述心轴图案，形成第二光致抗蚀剂，所述第二光致抗蚀剂包括在所述牺牲层上重叠所述第一和第二心轴间隔件的部分的桥接图案; 以及通过使用所述第一心轴间隔物和所述第二心轴间隔物和所述第二光致抗蚀剂作为掩模至少部分地去除所述栅极层来形成栅极图案。

6. 发明公开

KR20090035787A PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 无效
标题翻译：相变存储器件及其制造方法
公开(公告)号：KR20090035787A
公开(公告)日：2009-04-13
申请号：KR20070100745
申请日：2007-10-08
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： LIM YOUNG SOO , KO YONG SUN , KWON SUNG UN , HWANG JAE SEUNG
IPC分类号： H01L27/115
CPC分类号： H01L45/12 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675 , G11C13/0004 , H01L45/143
摘要： A phase change memory device and a method for manufacturing the same is provided to increase production yield by protecting lifting defect of a contact plug due to a fume component of a phase change in the contact hole. An access transistor(62) has a channel of a fixed level corresponding to a gate stack formed on the surface of a semiconductor substrate(60). The access transistor comprises a source/drain region(S/D), and a gate insulating layer(64), a gate electrode(66), and a gate upper insulation film(68) are laminated on a gate stack. A source/drain region is electrically connected to a respective phase change material layer(96) and a bit line(88). The phase change material layer is electrically connected to a bottom electrode(94) and an upper electrode(98). The side of the phase change material layer and side of the upper electrode are surrounded by a capping layer(102) having a silicon nitride film. The lifting of third contact plug inside a fourth contact hole is prevented by using the capping layer.
摘要翻译：提供了一种相变存储器件及其制造方法，其通过保护接触孔中的相变的烟雾成分引起的接触塞的提升缺陷来提高产量。存取晶体管（62）具有对应于形成在半导体衬底（60）的表面上的栅叠层的固定电平的沟道。存取晶体管包括源/漏区（S / D），栅极绝缘层（64），栅极电极（66）和栅极上绝缘膜（68）层叠在栅叠层上。源极/漏极区电连接到相应的相变材料层（96）和位线（88）。相变材料层电连接到底部电极（94）和上部电极（98）。相变材料层和上电极的一侧由具有氮化硅膜的覆盖层（102）包围。通过使用覆盖层来防止第四接触孔内的第三接触插塞的提升。

7. 发明授权

KR100713809B1 PHASE CHANGE RANDOM ACCESS MEMORY DEVCIES AND METHODS OF FORMING THE SAME 无效
标题翻译：相变随机存取存储器及其形成方法
公开(公告)号：KR100713809B1
公开(公告)日：2007-04-25
申请号：KR20060016800
申请日：2006-02-21
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： SONG JONG HEUI , KO YONG SUN , HWANG JAE SEUNG , SEO JUN
IPC分类号： H01L27/115
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675 , Y10S438/90
摘要： 상변화 기억 소자 및 그 형성 방법을 제공한다. 이 소자에 포함된 히터 플러그는 층간 절연막을 관통하는 콘택홀내에 배치된 아랫부분, 및 층간 절연막의 상부면 보다 높게 위로 돌출된 윗부분을 포함한다. 또한, 이 소자는 히터 플러그의 돌출된 부분의 상부면 및 측벽을 덮는 상변화 패턴, 히터 플러그의 돌출된 부분의 측벽과 상변화 패턴 사이에 개재된 절연 스페이서, 및 상변화 패턴 상에 배치된 캐핑 전극을 포함한다.

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