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1. 发明公开

KR20090073848A Cleaning composition for semiconductor device and cleaning method of semiconductor device using the same 审中-公开
标题翻译：用于半导体器件的清洁组合物和使用其的半导体器件的清洁方法
公开(公告)号：KR20090073848A
公开(公告)日：2009-07-03
申请号：KR20070141916
申请日：2007-12-31
申请人： CHEIL IND INC , SAMSUNG ELECTRONICS CO LTD
发明人： KO YONG SUN , YOON BYOUNG MOON , SON YOON HO , PARK JIN WOO , YANG HO SEOK , PARK MYUNG KOOK , LA JUNG IN , CHOI JUNG MIN
IPC分类号： C11D3/16 , C11D3/04 , C11D7/08
CPC分类号： C11D7/02 , C11D7/08 , C11D7/5004 , C11D11/0047 , H01L21/02057
摘要： A cleaning composition for a semiconductor device is provided to ensure excellent removal effect of etch residue, to minimize damages of underlayer, to prevent residues from being left even after performing a rinse process, and to improve productivity of a semiconductor manufacturing process. A cleaning composition for a semiconductor device comprises a fluoride compound 0.5-1.5 weight%, a water-soluble organic solvent 55-75 weight% and water 23.5-44.5 weight% and has pH of more than 8.0 and less than 8.5. A method for cleaning a semiconductor device comprises the steps of: forming a patterning target film on a semiconductor substrate; forming photoresist patterns on the object film to be patterned; etching the object film by using the photoresist pattern as a mask; and cleaning a semiconductor substrate of which the object film is etched, with the cleaning solution composition.
摘要翻译：提供了一种用于半导体器件的清洁组合物，以确保蚀刻残留物的优异的去除效果，以使底层的损伤最小化，以防止残留物甚至在进行漂洗过程之后残留，并提高半导体制造工艺的生产率。用于半导体器件的清洁组合物包含0.5-1.5重量％的氟化合物，55-75重量％的水溶性有机溶剂和23.5-44.5重量％的水，其pH值大于8.0且小于8.5。一种用于清洁半导体器件的方法包括以下步骤：在半导体衬底上形成图案化靶膜; 在待图案化的物体膜上形成光刻胶图案; 通过使用光致抗蚀剂图案作为掩模来蚀刻物体膜; 并用清洁溶液组合物清洗其中蚀刻有目标薄膜的半导体衬底。

2. 发明公开

KR20070118348A METHOD OF MANUFACTURING A NON-VOLATILE MEMORY DEVICE 审中-公开
标题翻译：制造非易失性存储器件的方法
公开(公告)号：KR20070118348A
公开(公告)日：2007-12-17
申请号：KR20060052367
申请日：2006-06-12
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： LEE WON JUN , YOON BYOUNG MOON , PARK CHEOL WOO , PARK JIN WOO , YANG JUN YOUL
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： H01L27/11521 , H01L21/28141 , H01L21/76224 , H01L21/76838
摘要： A method of manufacturing a non-volatile memory device is provided to form a wide opening between isolation layers by performing a wet-etch process. A preliminary isolation layer is protruded from a substrate in order to bury a trench formed on a substrate(100). A width of an upper surface of the preliminary isolation layer is larger than a width of a lower surface of the preliminary isolation layer. A spacer is formed on a sidewall of the preliminary isolation layer. An isolation layer(110a) having a vertical side is formed by wet-etching the preliminary isolation layer. A conductive layer for floating gate is formed to fill a space between the isolation layer and the isolation layer and to cover the isolation layer. A floating gate(130a) is formed by etching the conductive layer for floating gate. A dielectric layer(140) is formed on an upper surface of the floating gate. A control gate(150) is formed on the dielectric layer.
摘要翻译：提供制造非易失性存储器件的方法，以通过执行湿式蚀刻工艺在隔离层之间形成宽的开口。预备隔离层从衬底突出以便掩埋形成在衬底（100）上的沟槽。预备隔离层的上表面的宽度大于预隔离层的下表面的宽度。间隔物形成在预备隔离层的侧壁上。通过湿式蚀刻初步隔离层形成具有垂直侧的隔离层（110a）。形成用于浮动栅极的导电层以填充隔离层和隔离层之间的空间并覆盖隔离层。通过蚀刻浮栅的导电层形成浮栅（130a）。介电层（140）形成在浮动栅极的上表面上。在电介质层上形成控制栅极（150）。

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