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1. 发明申请

US20080008422A1 APPARATUS FOR FORMING PATTERN ON LIGHT GUIDING PLATE AND METHOD OF MANUFACTURING LIGHT GUIDING PLATE 审中-公开
标题翻译：用于形成轻型导板的图案的装置和制造光导向板的方法
公开(公告)号：US20080008422A1
公开(公告)日：2008-01-10
申请号：US11773573
申请日：2007-07-05
申请人： Byung Yun Joo , Jin Soo Kim , Ju Hwa Ha , Min Young Song , Jung Wook Paek , Jin Sung Choi
发明人： Byung Yun Joo , Jin Soo Kim , Ju Hwa Ha , Min Young Song , Jung Wook Paek , Jin Sung Choi
IPC分类号： G02B6/30
CPC分类号： G02B6/0065 , B29C43/021 , B29C43/10 , B29C2043/3238 , B29C2043/567 , B29D11/00663 , B29L2011/0016 , G02B6/0038
摘要： An apparatus for forming a pattern for a light guiding plate and a method of manufacturing a light guiding plate. The method of manufacturing a light guiding plate includes preparing a plurality of light guiding plates, each of the light guiding plates being a mother substrate on which optical patterns are formed, disposing molding frames including molding patterns on at least one surface of the light guiding plates, forming optical patterns corresponding to the molding patterns on the light guiding plates and removing the molding frames from the respective light guiding plates. The forming optical patterns includes hydrostatic pressing of the light guiding plates and the molding frames.
摘要翻译：一种用于形成导光板图案的装置和制造导光板的方法。制造导光板的方法包括制备多个导光板，每个导光板是形成有光学图案的母基板，将包括模制图案的模制框架设置在导光板的至少一个表面上形成对应于导光板上的模制图案的光学图案并从相应的导光板移除模制框架。成型光学图案包括导光板和模制框架的静水压力。

2. 发明授权

US07766530B2 Backlight, a lens for a backlight, and a backlight assembly having the same 有权
标题翻译：背光，用于背光的透镜，以及具有该背光的背光组件
公开(公告)号：US07766530B2
公开(公告)日：2010-08-03
申请号：US11923106
申请日：2007-10-24
申请人： Seong Yong Hwang , Se Ki Park , Jin Sung Choi , Jin Soo Kim
发明人： Seong Yong Hwang , Se Ki Park , Jin Sung Choi , Jin Soo Kim
IPC分类号： F21V5/04
CPC分类号： G02B3/0056 , F21V5/04 , F21Y2115/10 , G02B3/005 , G02B3/04 , G02B19/0009 , G02B19/0061 , G02F1/133606 , G02F2001/133607
摘要： A lens for a backlight, including: a light transmissive body including outer and inner surface areas, the outer surface area having a convex surface and a concave surface, the inner surface area having a convex surface and a concave surface, wherein the convex surface of the outer surface area has a curvature different from a curvature of the convex surface of the inner surface area and the concave surface of the outer surface area has a curvature different from a curvature of the concave surface of the inner surface area.
摘要翻译：一种用于背光的透镜，包括：包括外表面区域和内表面区域的透光体，所述外表面区域具有凸面和凹面，所述内表面区域具有凸面和凹面，其中，外表面区域具有与内表面区域的凸面的曲率不同的曲率，外表面区域的凹面的曲率不同于内表面区域的凹面的曲率。

3. 发明申请

US20080100773A1 BACKLIGHT, A LENS FOR A BACKLIGHT, AND A BACKLIGHT ASSEMBLY HAVING THE SAME 有权
标题翻译：背光灯，背光镜头和背光灯组件
公开(公告)号：US20080100773A1
公开(公告)日：2008-05-01
申请号：US11923106
申请日：2007-10-24
申请人： Seong Yong Hwang , Se Ki Park , Jin Sung Choi , Jin Soo Kim
发明人： Seong Yong Hwang , Se Ki Park , Jin Sung Choi , Jin Soo Kim
IPC分类号： F21V23/02 , F21S8/00 , G02F1/1335 , F21V11/00
CPC分类号： G02B3/0056 , F21V5/04 , F21Y2115/10 , G02B3/005 , G02B3/04 , G02B19/0009 , G02B19/0061 , G02F1/133606 , G02F2001/133607
摘要： A lens for a backlight, including: a light transmissive body including outer and inner surface areas, the outer surface area having a convex surface and a concave surface, the inner surface area having a convex surface and a concave surface, wherein the convex surface of the outer surface area has a curvature different from a curvature of the convex surface of the inner surface area and the concave surface of the outer surface area has a curvature different from a curvature of the concave surface of the inner surface area.
摘要翻译：一种用于背光的透镜，包括：包括外表面区域和内表面区域的透光体，所述外表面区域具有凸面和凹面，所述内表面区域具有凸面和凹面，其中，外表面区域具有与内表面区域的凸面的曲率不同的曲率，外表面区域的凹面的曲率不同于内表面区域的凹面的曲率。

4. 发明授权

US08613989B2 Film donor device for laser induced thermal imaging 失效
标题翻译：用于激光诱导热成像的薄膜供体装置
公开(公告)号：US08613989B2
公开(公告)日：2013-12-24
申请号：US11511153
申请日：2006-08-28
申请人： Tae Min Kang , Jin Soo Kim , Mu Hyun Kim , Sun Hoe Kim , Noh Min Kwak , Sang Bong Lee , Seong Taek Lee , Seung Hyun Lee , Sok Won Noh , Jin Wook Seong , Myung Won Song , Yeun Joo Sung , Byeong Wook Yoo
发明人： Tae Min Kang , Jin Soo Kim , Mu Hyun Kim , Sun Hoe Kim , Noh Min Kwak , Sang Bong Lee , Seong Taek Lee , Seung Hyun Lee , Sok Won Noh , Jin Wook Seong , Myung Won Song , Yeun Joo Sung , Byeong Wook Yoo
IPC分类号： B41J2/38
CPC分类号： B41M5/265 , B41M5/38221 , H01L51/0013
摘要： A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.
摘要翻译：公开了一种激光诱导热成像（LITI）装置和使用其的电子装置的制造方法。 LITI装置包括腔室，衬底支撑件，接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。磁力由形成在LITI装置的两个部件中的磁性材料产生，该两个部件是间隔开的中间转印层和中间装置的表面。在LITI装置的以下两个部件中形成磁体或磁性材料：1）中间装置和薄膜供体装置; 2）中间装置和接触框架; 3）基底支撑体和薄膜供体装置; 或4）衬底支撑件和接触框架。

5. 发明授权

US08268657B2 Laser induced thermal imaging apparatus 失效
标题翻译：激光感应热成像仪
公开(公告)号：US08268657B2
公开(公告)日：2012-09-18
申请号：US11510997
申请日：2006-08-28
申请人： Tae Min Kang , Jin Soo Kim , Mu Hyun Kim , Sun Hoe Kim , Noh Min Kwak , Sang Bong Lee , Seong Taek Lee , Seung Hyun Lee , Sok Won Noh , Jin Wook Seong , Myung Won Song , Yeun Joo Sung , Byeong Wook Yoo
发明人： Tae Min Kang , Jin Soo Kim , Mu Hyun Kim , Sun Hoe Kim , Noh Min Kwak , Sang Bong Lee , Seong Taek Lee , Seung Hyun Lee , Sok Won Noh , Jin Wook Seong , Myung Won Song , Yeun Joo Sung , Byeong Wook Yoo
IPC分类号： G03G5/16 , G03C5/16 , G03F7/00 , H01L21/00 , H01L51/40
CPC分类号： B41M5/265 , B41M5/38221 , H01L51/0013
摘要： A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.
摘要翻译：公开了一种激光诱导热成像（LITI）装置和使用其的电子装置的制造方法。 LITI装置包括腔室，衬底支撑件，接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。磁力由形成在LITI装置的两个部件中的磁性材料产生，该两个部件是间隔开的中间转印层和中间装置的表面。在LITI装置的以下两个部件中形成磁体或磁性材料：1）中间装置和薄膜供体装置; 2）中间装置和接触框架; 3）基底支撑体和薄膜供体装置; 或4）衬底支撑件和接触框架。

6. 发明授权

US08216938B2 Method for forming semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US08216938B2
公开(公告)日：2012-07-10
申请号：US12982814
申请日：2010-12-30
申请人： Ki Lyoung Lee , Jin Soo Kim
发明人： Ki Lyoung Lee , Jin Soo Kim
IPC分类号： H01L21/44
CPC分类号： H01L21/3086 , H01L27/11521
摘要： A method for forming a semiconductor device includes forming a partition line pattern and a partition pad pattern connected to an end part of the partition line pattern over the semiconductor substrate. Spacer insulation layers are formed at sidewalls of the partition line pattern and the partition pad pattern. A gap-filling layer is formed between the spacer insulation layers. A first cutting mask pattern is formed to expose a connecting part between the partition line pattern and the partition pad pattern. The partition line pattern and the gap-filling layer adjacent to the spacer insulation layer are removed using the first cutting mask pattern as a mask. A second cutting mask pattern including a first pattern and a second pattern are formed. The spacer insulation layer is removed using the second cutting mask pattern as a mask to form a gate trench in the substrate.
摘要翻译：一种形成半导体器件的方法包括在半导体衬底上形成分隔线图案和与分隔线图案的端部连接的分隔垫图案。间隔绝缘层形成在分隔线图案和分隔垫图案的侧壁处。在间隔绝缘层之间形成间隙填充层。形成第一切割掩模图案以暴露分隔线图案和分隔垫图案之间的连接部分。使用第一切割掩模图案作为掩模去除与间隔绝缘层相邻的分隔线图案和间隙填充层。形成包括第一图案和第二图案的第二切割掩模图案。使用第二切割掩模图案作为掩模去除间隔绝缘层，以在基板中形成栅极沟槽。

7. 发明申请

US20100100667A1 Flash memory system and designing method of flash translation layer thereof 有权
标题翻译：闪存系统及其闪存转换层的设计方法
公开(公告)号：US20100100667A1
公开(公告)日：2010-04-22
申请号：US12588198
申请日：2009-10-07
申请人： Jeonguk Kang , Yong-Goo Lee , Chanik Park , Jin Soo Kim
发明人： Jeonguk Kang , Yong-Goo Lee , Chanik Park , Jin Soo Kim
IPC分类号： G06F12/00 , G06F12/02 , G06F12/10
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7205 , Y02D10/13
摘要： The method of designing a flash translation layer includes receiving a logical address according to an external request and mapping a physical address that corresponds to the logical address. The mapping manages continuous logical addresses and physical addresses corresponding to the logical addresses as one mapping unit.
摘要翻译：闪存转换层的设计方法包括根据外部请求接收逻辑地址，并映射对应于逻辑地址的物理地址。映射管理与逻辑地址对应的连续逻辑地址和物理地址作为一个映射单元。

8. 发明授权

US07606284B2 Semiconductor laser structure including quantum dot 有权
标题翻译：半导体激光器结构包括量子点
公开(公告)号：US07606284B2
公开(公告)日：2009-10-20
申请号：US11595470
申请日：2006-11-09
申请人： Dae Kon Oh , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Ho Sang Kwack
发明人： Dae Kon Oh , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Ho Sang Kwack
IPC分类号： H01S3/08
CPC分类号： H01S5/12 , H01S5/1231 , H01S5/1243 , H01S5/22
摘要： Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.
摘要翻译：提供一种分布式反馈半导体激光器结构，包括：第一覆层; 形成在第一覆盖层上的第一脊状波导; 形成在第一脊波导上的有源层; 形成在有源层上的第二脊状波导; 形成在第二脊波导上的第二覆层; 形成在所述第二覆盖层上的欧姆接触层; 以及形成在所述第一和第二包层中的至少一个中的多个光栅，与所述第一脊波导或所述第二脊波导成预定的角度，并且沿所述第一或第二脊波导的纵向方向周期性地布置。结果，能够大量生产的一般的全息图光刻工艺被应用于本发明，从而可以减少处理时间。此外，提供了使用量子点有源层的分布式反馈半导体激光器结构，其不需要用于获得纯单波长的附加工艺。

9. 发明授权

US07546231B2 Method of simulating semiconductor integrated circuit 失效
标题翻译：模拟半导体集成电路的方法
公开(公告)号：US07546231B2
公开(公告)日：2009-06-09
申请号：US11324045
申请日：2005-12-29
申请人： Jin Soo Kim
发明人： Jin Soo Kim
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： A method and computer program for simulating a semiconductor integrated circuit is disclosed, in which a voltage coefficient of resistance according to a variation of width or length of a resistor device of the integrated circuit may be accurately applied to a model in a manner of including the length and width in variables for measuring the resistance of the resistor device and by which efficiency of a circuit design is considerably enhanced. The method generally includes the steps of measuring a plurality of resistances of a plurality resistors having different length (L) and width (W) from each other while varying a voltage applied to the resistors respectively, calculating a voltage coefficient resist (VCR) of the resistors using the measured resistances, the VCR expressed as a linear function of voltage, and calculating resistance of a certain resistor device having a specific length and width using the VCR. The computer program is generally configured to calculate a voltage coefficient of resistance (VCR) of the resistor as a function of voltage (dV), length (L) and width (W).
摘要翻译：公开了一种用于模拟半导体集成电路的方法和计算机程序，其中根据集成电路的电阻器件的宽度或长度的变化的电阻的电压系数可以以包括用于测量电阻器件电阻的变量的长度和宽度以及电路设计的效率大大提高。该方法通常包括以下步骤：分别改变施加到电阻器的电压，测量分别具有不同长度（L）和宽度（W）的多个电阻器的多个电阻，计算电压系数抗蚀剂（VCR）使用测量的电阻的电阻器，VCR表示为电压的线性函数，以及使用VCR计算具有特定长度和宽度的特定电阻器件的电阻。计算机程序通常被配置为根据电压（dV），长度（L）和宽度（W）来计算电阻器的电阻电压系数（VCR）。

10. 发明申请

US20070133639A1 Semiconductor laser structure including quantum dot 有权
标题翻译：半导体激光器结构包括量子点
公开(公告)号：US20070133639A1
公开(公告)日：2007-06-14
申请号：US11595470
申请日：2006-11-09
申请人： Dae Kon Oh , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Ho Sang Kwack
发明人： Dae Kon Oh , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Ho Sang Kwack
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , H01S5/1231 , H01S5/1243 , H01S5/22
摘要： Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.
摘要翻译：提供一种分布式反馈半导体激光器结构，包括：第一覆层; 形成在第一覆盖层上的第一脊状波导; 形成在第一脊波导上的有源层; 形成在有源层上的第二脊形波导; 形成在第二脊波导上的第二覆层; 形成在所述第二覆盖层上的欧姆接触层; 以及形成在所述第一和第二包层中的至少一个中的多个光栅，与所述第一脊波导或所述第二脊波导成预定的角度，并且沿所述第一或第二脊波导的纵向方向周期性地布置。结果，能够大量生产的一般的全息图光刻工艺被应用于本发明，从而可以减少处理时间。此外，提供了使用量子点有源层的分布式反馈半导体激光器结构，其不需要用于获得纯单波长的附加工艺。

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