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1. 发明授权

US08495280B2 Flash memory system and designing method of flash translation layer thereof 有权
标题翻译：闪存系统及其闪存转换层的设计方法
公开(公告)号：US08495280B2
公开(公告)日：2013-07-23
申请号：US12588198
申请日：2009-10-07
申请人： Jeonguk Kang , Yong-Goo Lee , Chanik Park , Jin Soo Kim
发明人： Jeonguk Kang , Yong-Goo Lee , Chanik Park , Jin Soo Kim
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7205 , Y02D10/13
摘要： The method of designing a flash translation layer includes receiving a logical address according to an external request and mapping a physical address that corresponds to the logical address. The mapping manages continuous logical addresses and physical addresses corresponding to the logical addresses as one mapping unit.
摘要翻译：闪存转换层的设计方法包括根据外部请求接收逻辑地址，并映射对应于逻辑地址的物理地址。映射管理与逻辑地址对应的连续逻辑地址和物理地址作为一个映射单元。

2. 发明申请

US20100100667A1 Flash memory system and designing method of flash translation layer thereof 有权
标题翻译：闪存系统及其闪存转换层的设计方法
公开(公告)号：US20100100667A1
公开(公告)日：2010-04-22
申请号：US12588198
申请日：2009-10-07
申请人： Jeonguk Kang , Yong-Goo Lee , Chanik Park , Jin Soo Kim
发明人： Jeonguk Kang , Yong-Goo Lee , Chanik Park , Jin Soo Kim
IPC分类号： G06F12/00 , G06F12/02 , G06F12/10
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7205 , Y02D10/13
摘要： The method of designing a flash translation layer includes receiving a logical address according to an external request and mapping a physical address that corresponds to the logical address. The mapping manages continuous logical addresses and physical addresses corresponding to the logical addresses as one mapping unit.
摘要翻译：闪存转换层的设计方法包括根据外部请求接收逻辑地址，并映射对应于逻辑地址的物理地址。映射管理与逻辑地址对应的连续逻辑地址和物理地址作为一个映射单元。

3. 发明授权

US09292551B2 Storage device and stream filtering method thereof 有权
标题翻译：存储设备及其流过滤方法
公开(公告)号：US09292551B2
公开(公告)日：2016-03-22
申请号：US14021081
申请日：2013-09-09
申请人： Jeonguk Kang , Dawoon Jung , Chanik Park
发明人： Jeonguk Kang , Dawoon Jung , Chanik Park
IPC分类号： G06F17/30
CPC分类号： G06F17/30312 , G06F17/30516
摘要： A storage device may include a main storage part including memories; and a controller configured to control an overall operation of the main storage part. The controller includes a filter manager configured to store data format information and a filtering condition provided from a host; stream filters configured to search and project data stored in the memories in parallel in response to a control of the filter manager to produce searched and projected data; and a merge filter configured to merge the searched and projected data of the stream filters in response to the control of the filter manager.
摘要翻译：存储装置可以包括包括存储器的主存储部分; 以及控制器，被配置为控制主存储部的整体操作。控制器包括被配置为存储从主机提供的数据格式信息和滤波条件的滤波器管理器; 流滤波器，被配置为响应于过滤器管理器的控制并行地搜索和投影存储在存储器中的数据，以产生搜索和投影的数据; 以及合并过滤器，其被配置为响应于过滤器管理器的控制来合并流过滤器的搜索和投影数据。

4. 发明授权

US09558247B2 Storage device and stream filtering method thereof 有权
标题翻译：存储设备及其流过滤方法
公开(公告)号：US09558247B2
公开(公告)日：2017-01-31
申请号：US13599052
申请日：2012-08-30
申请人： Chanik Park , Jeonguk Kang , Kangho Roh , Yang Seok Ki
发明人： Chanik Park , Jeonguk Kang , Kangho Roh , Yang Seok Ki
IPC分类号： G06F17/30 , G11C7/10 , G06Q10/10 , G11C16/26
CPC分类号： G06F17/30554 , G06F17/30516 , G06F17/30867 , G06Q10/10 , G11C7/1006 , G11C16/26
摘要： A storage device may include a main storage part including one or more memories; and a controller configured to control an overall operation of the main storage part. The controller includes a filter manager configured to store data format information and a filtering condition provided from a host; one or more stream filters configured to search and project data stored in the one or more memories in parallel in response to a control of the filter manager to produce searched and projected data; and a merge filter configured to merge the searched and projected data of the one or more stream filters in response to the control of the filter manager.
摘要翻译：存储装置可以包括包括一个或多个存储器的主存储部分; 以及控制器，被配置为控制主存储部的整体操作。控制器包括被配置为存储从主机提供的数据格式信息和过滤条件的过滤器管理器; 一个或多个流滤波器，被配置为响应于过滤器管理器的控制并行地搜索和投影存储在一个或多个存储器中的数据，以产生搜索和投影的数据; 以及合并过滤器，其被配置为响应于过滤器管理器的控制来合并所述一个或多个流过滤器的搜索和投影数据。

5. 发明申请

US20120054420A1 STORAGE DEVICE AND STREAM FILTERING METHOD THEREOF 审中-公开
标题翻译：存储设备和流过滤方法
公开(公告)号：US20120054420A1
公开(公告)日：2012-03-01
申请号：US13187867
申请日：2011-07-21
申请人： Jeonguk KANG , Dawoon Jung , Chanik Park
发明人： Jeonguk KANG , Dawoon Jung , Chanik Park
IPC分类号： G06F12/00 , G06F7/00
CPC分类号： G06F16/22 , G06F16/24568
摘要： A storage device may include a main storage part including memories; and a controller configured to control an overall operation of the main storage part. The controller includes a filter manager configured to store data format information and a filtering condition provided from a host; stream filters configured to search and project data stored in the memories in parallel in response to a control of the filter manager to produce searched and projected data; and a merge filter configured to merge the searched and projected data of the stream filters in response to the control of the filter manager.
摘要翻译：存储装置可以包括包括存储器的主存储部分; 以及控制器，被配置为控制主存储部的整体操作。控制器包括被配置为存储从主机提供的数据格式信息和滤波条件的滤波器管理器; 流滤波器，被配置为响应于过滤器管理器的控制并行地搜索和投影存储在存储器中的数据，以产生搜索和投影的数据; 以及合并过滤器，其被配置为响应于过滤器管理器的控制来合并流过滤器的搜索和投影数据。

6. 发明授权

US08638585B2 Memory system and method of accessing a semiconductor memory device 有权
公开(公告)号：US08638585B2
公开(公告)日：2014-01-28
申请号：US13137409
申请日：2011-08-12
申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
发明人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
IPC分类号： G11C5/02
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C29/00 , G11C2211/5621 , Y02D10/13
摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

7. 发明授权

US08565021B2 Memory system and method of accessing a semiconductor memory device 有权
公开(公告)号：US08565021B2
公开(公告)日：2013-10-22
申请号：US13137401
申请日：2011-08-11
申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
发明人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C29/00 , G11C2211/5621 , Y02D10/13
摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

8. 发明申请

US20110299335A1 Memory system and method of accessing a semiconductor memory device 有权
公开(公告)号：US20110299335A1
公开(公告)日：2011-12-08
申请号：US13137401
申请日：2011-08-11
申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
发明人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
IPC分类号： G11C16/10
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C29/00 , G11C2211/5621 , Y02D10/13
摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

9. 发明授权

US08050101B2 Nonvolatile memory devices having erased-state verify capability and methods of operating same 有权
标题翻译：具有擦除状态验证能力的非易失性存储器件及其操作方法
公开(公告)号：US08050101B2
公开(公告)日：2011-11-01
申请号：US12543993
申请日：2009-08-19
申请人： Kitae Park , Chanik Park
发明人： Kitae Park , Chanik Park
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3454
摘要： A program method of a nonvolatile memory device includes applying a program voltage to program cells for changing data; verifying the program cells, based on the changed data; and verifying program inhibit cells for maintaining stored data even when the program voltage is applied to the program inhibit cells, based on the stored data.
摘要翻译：非易失性存储器件的编程方法包括将程序电压施加到编程单元以改变数据; 基于改变的数据验证程序单元; 以及即使当基于所存储的数据将程序电压施加到程序禁止单元时，验证程序禁止用于维持存储的数据的单元。

10. 发明授权

US08614919B2 Memory system and method of accessing a semiconductor memory device 有权
公开(公告)号：US08614919B2
公开(公告)日：2013-12-24
申请号：US13137422
申请日：2011-08-15
申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
发明人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G06F12/0246 , G06F2212/7201 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C29/00 , G11C2211/5621 , Y02D10/13
摘要： A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.

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