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1. 发明授权

US5855693A Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication 失效
标题翻译：用于制造集成器件的半导体材料的晶片及其制造工艺
公开(公告)号：US5855693A
公开(公告)日：1999-01-05
申请号：US571806
申请日：1995-12-13
申请人： Bruno Murari , Flavio Villa , Ubaldo Mastromatteo
发明人： Bruno Murari , Flavio Villa , Ubaldo Mastromatteo
IPC分类号： H01L21/02 , H01L21/20 , H01L27/00 , H01L27/12 , H01L21/265
CPC分类号： H01L21/2007 , H01L2924/01006 , H01L2924/01019 , H01L2924/01074 , H01L2924/14
摘要： A wafer of semiconductor material for fabricating integrated devices, including a stack of superimposed layers including first and second monocrystalline silicon layers separated by an intermediate insulating layer made of a material selected from the group comprising silicon carbide, silicon nitride and ceramic materials. An oxide bond layer is provided between the intermediate layer and the second silicon layer. The wafer is fabricated by forming the intermediate insulating layer on the first silicon layer in a heated vacuum chamber; depositing the oxide layer; and superimposing the second silicon layer. When the stack of silicon, insulating material, oxide and silicon layers is heat treated, the oxide reacts so as to bond the insulating layer to the second silicon layer. As a ceramic material beryllium oxide, aluminium nitride, boron nitride and alumina may be used.
摘要翻译：一种用于制造集成器件的半导体材料晶片，包括由包括由碳化硅，氮化硅和陶瓷材料组成的材料制成的中间绝缘层分隔的第一和第二单晶硅层的叠加层。在中间层和第二硅层之间设置氧化物接合层。通过在加热的真空室中在第一硅层上形成中间绝缘层来制造晶片; 沉积氧化层; 并叠加第二硅层。当硅，绝缘材料，氧化物和硅层的堆叠被热处理时，氧化物反应以将绝缘层粘合到第二硅层。作为陶瓷材料氧化铍，可以使用氮化铝，氮化硼和氧化铝。

2. 发明授权

US06171931B2 Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication 有权
标题翻译：用于制造集成器件的半导体材料的晶片及其制造工艺
公开(公告)号：US06171931B2
公开(公告)日：2001-01-09
申请号：US09167246
申请日：1998-10-06
申请人： Bruno Murari , Flavio Villa , Ubaldo Mastromatteo
发明人： Bruno Murari , Flavio Villa , Ubaldo Mastromatteo
IPC分类号： H01L2146
CPC分类号： H01L24/83 , H01L21/31662 , H01L21/76251 , H01L21/76256 , H01L24/26 , H01L2224/8319 , H01L2224/8385 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01039 , H01L2924/01074 , H01L2924/07802 , H01L2924/14 , H01L2924/30105
摘要： A wafer of semiconductor material for fabricating integrated devices, including a stack of superimposed layers including first and second monocrystalline silicon layers separated by an intermediate insulating layer made of a material selected from the group comprising silicon carbide, silicon nitride and ceramic materials. An oxide bond layer is provided between the intermediate layer and the second silicon layer. The wafer is fabricated by forming the intermediate insulating layer on the first silicon layer in a heated vacuum chamber; depositing the oxide layer; and superimposing the second silicon layer. When the stack of silicon, insulating material, oxide and silicon layers is heat treated, the oxide reacts so as to bond the insulating layer to the second silicon layer. As a ceramic material beryllium oxide, aluminium nitride, boron nitride and alumina may be used.
摘要翻译：一种用于制造集成器件的半导体材料晶片，包括由包括由碳化硅，氮化硅和陶瓷材料组成的材料制成的中间绝缘层分隔的第一和第二单晶硅层的叠加层。在中间层和第二硅层之间设置氧化物接合层。通过在加热的真空室中在第一硅层上形成中间绝缘层来制造晶片; 沉积氧化层; 并叠加第二硅层。当硅，绝缘材料，氧化物和硅层的堆叠被热处理时，氧化物反应以将绝缘层粘合到第二硅层。作为陶瓷材料氧化铍，可以使用氮化铝，氮化硼和氧化铝。

3. 发明申请

US20070252224A1 Integrated Chemical Microreactor With Large Area Channels and Manufacturing Process Thereof 有权
标题翻译：具有大面积通道的综合化学微反应器及其制造工艺
公开(公告)号：US20070252224A1
公开(公告)日：2007-11-01
申请号：US11743062
申请日：2007-05-01
申请人： Gabriele Barlocchi , Ubaldo Mastromatteo , Flavio Villa
发明人： Gabriele Barlocchi , Ubaldo Mastromatteo , Flavio Villa
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00828 , Y10T436/114998
摘要： The microreactor has a body of semiconductor material; a large area buried channel extending in the body and having walls; a coating layer of insulating material coating the walls of the channel; a diaphragm extending on top of the body and upwardly closing the channel. The diaphragm is formed by a semiconductor layer completely encircling mask portions of insulating material.
摘要翻译：微反应器具有半导体材料体; 一个大面积的埋藏通道延伸到身体并具有墙壁; 覆盖通道壁的绝缘材料的涂层; 一个在主体顶部延伸并向上封闭通道的隔膜。隔膜由完全环绕绝缘材料的掩模部分的半导体层形成。

4. 发明授权

US07009154B2 Process for manufacturing integrated chemical microreactors of semiconductor material 有权
公开(公告)号：US07009154B2
公开(公告)日：2006-03-07
申请号：US10784509
申请日：2004-02-23
申请人： Flavio Villa , Ubaldo Mastromatteo , Gabriele Barlocchi , Mauro Cattaneo
发明人： Flavio Villa , Ubaldo Mastromatteo , Gabriele Barlocchi , Mauro Cattaneo
IPC分类号： C12M1/34 , G01N33/487 , H05B3/02
CPC分类号： B81C1/00119 , B01J19/0093 , B01L3/5027 , B01L3/502707 , B01L7/52 , B01L7/525 , B01L2200/12 , B01L2300/0645 , B01L2300/1827 , B01L2300/185 , B01L2300/1883 , B81B2201/0214 , B81B2201/051 , B81B2203/0315 , B81B2203/0338 , B81C2201/053
摘要： The microreactor is completely integrated and is formed by a semiconductor body having a surface and housing at least one buried channel accessible from the surface of the semiconductor body through two trenches. A heating element extends above the surface over the channel and a resist region extends above the heating element and defines an inlet reservoir and an outlet reservoir. The reservoirs are connected to the trenches and have, in cross-section, a larger area than the trenches. The outlet reservoir has a larger area than the inlet reservoir. A sensing electrode extends above the surface and inside the outlet reservoir.

5. 发明授权

US06710311B2 Process for manufacturing integrated chemical microreactors of semiconductor material 有权
公开(公告)号：US06710311B2
公开(公告)日：2004-03-23
申请号：US09874382
申请日：2001-06-04
申请人： Flavio Villa , Ubaldo Mastromatteo , Gabriele Barlocchi , Mauro Cattaneo
发明人： Flavio Villa , Ubaldo Mastromatteo , Gabriele Barlocchi , Mauro Cattaneo
IPC分类号： C12M134
CPC分类号： B81C1/00119 , B01J19/0093 , B01L3/5027 , B01L3/502707 , B01L7/52 , B01L7/525 , B01L2200/12 , B01L2300/0645 , B01L2300/1827 , B01L2300/185 , B01L2300/1883 , B81B2201/0214 , B81B2201/051 , B81B2203/0315 , B81B2203/0338 , B81C2201/053
摘要： The microreactor is completely integrated and is formed by a semiconductor body having a surface and housing at least one buried channel accessible from the surface of the semiconductor body through two trenches. A heating element extends above the surface over the channel and a resist region extends above the heating element and defines an inlet reservoir and an outlet reservoir. The reservoirs are connected to the trenches and have, in cross-section, a larger area than the trenches. The outlet reservoir has a larger area than the inlet reservoir. A sensing electrode extends above the surface and inside the outlet reservoir.

6. 发明授权

US06350657B1 Inexpensive method of manufacturing an SOI wafer 有权
标题翻译：制造SOI晶片的廉价方法
公开(公告)号：US06350657B1
公开(公告)日：2002-02-26
申请号：US09359870
申请日：1999-07-26
申请人： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
发明人： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
IPC分类号： H01L21311
CPC分类号： H01L21/3065 , H01L21/7624 , H01L21/76262
摘要： A method of manufacturing an SOI (silicon on insulator) wafer includes the step of selective anisotropic etching to form, in the substrate, trenches which extend to a predetermined depth from a major surface of the substrate and between which pillar portions of the substrate are defined. The method further includes the step of selective isotropic etching to enlarge the trenches, starting at a predetermined distance from the major surface, thus reducing the thicknesses of the pillar portions of the substrate between adjacent trenches. Also, the method includes the steps of selective oxidation to convert the pillar portions of reduced thickness of the substrate into silicon dioxide and to fill the trenches with silicon dioxide, starting substantially from the predetermined distance, and epitaxial growth of a silicon layer on the major surface of the substrate. The method permits more freedom in the selection of the dimensional ratios between the trenches and the pillars and thus enables the necessary crystallographic quality of the epitaxial layer to be achieved, ensuring a continuous buried oxide layer.
摘要翻译：制造SOI（绝缘体上硅）晶片的方法包括选择性各向异性蚀刻的步骤，以在衬底中形成从衬底的主表面延伸到预定深度并且在衬底的哪个柱部分被限定的沟槽之间。该方法还包括选择性各向同性蚀刻步骤，以从主表面预定距离开始扩大沟槽，从而减小相邻沟槽之间的衬底的柱部分的厚度。此外，该方法包括以下步骤：选择性氧化以将衬底的厚度的柱部分转换为二氧化硅，并且以基本上从预定距离开始的二氧化硅填充沟槽，以及主层上的硅层的外延生长基板的表面。该方法允许在选择沟槽和柱之间的尺寸比例时更多的自由度，并且因此能够实现外延层的必要的晶体学质量，确保连续的掩埋氧化物层。

7. 发明申请

US20050176037A1 Integrated semiconductor microreactor for real-time monitoring of biological reactions 有权
标题翻译：集成半导体微反应器，用于实时监测生物反应
公开(公告)号：US20050176037A1
公开(公告)日：2005-08-11
申请号：US11009171
申请日：2004-12-10
申请人： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
发明人： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
IPC分类号： B01J19/00 , B01L3/00 , B01L7/00 , B81B1/00 , G01N21/64 , C12Q1/68 , C12M1/34 , H01L21/00
CPC分类号： G01N21/6428 , B01J19/0093 , B01J2219/0097 , B01L3/502707 , B01L3/502715 , B01L7/52 , B01L2200/12 , B01L2300/0654 , B01L2300/0816 , G01N21/6454
摘要： An integrated semiconductor chemical microreactor for real-time polymerase chain reaction (PCR) monitoring, has a monolithic body of semiconductor material; a number of buried channels formed in the monolithic body; an inlet trench and an outlet trench for each buried channel; and a monitoring trench for each buried channel, extending between the inlet and outlet trenches thereof from the top surface of the monolithic body to the respective buried channel. Real-time PCR monitoring is carried out by channeling light beams into the buried channels, possibly through one of the inlet or outlet trenches, whereby the light beams impinge on the fluid therein and collecting the emergent light coming out from the monitoring trench.
摘要翻译：一种用于实时聚合酶链反应（PCR）监测的集成半导体化学微反应器，具有半导体材料的整体; 形成在整体式主体中的多个埋入通道; 用于每个掩埋通道的入口沟槽和出口沟槽; 以及用于每个掩埋通道的监测沟槽，其在其入口和出口沟槽之间从单体主体的顶表面延伸到相应的掩埋通道。通过将光束通过入口或出口沟槽中的一个引入到掩埋通道中，从而使光束照射在其中的流体并收集从监测沟槽出来的出射光，从而进行实时PCR监测。

8. 发明授权

US06759132B2 Method for the manufacture of electromagnetic radiation reflecting devices 有权
标题翻译：制造电磁辐射反射装置的方法
公开(公告)号：US06759132B2
公开(公告)日：2004-07-06
申请号：US10295767
申请日：2002-11-14
申请人： Ubaldo Mastromatteo , Pietro Corona , Flavio Villa , Gabriele Barlocchi
发明人： Ubaldo Mastromatteo , Pietro Corona , Flavio Villa , Gabriele Barlocchi
IPC分类号： B32B900
CPC分类号： G11B7/1362 , G02B5/08 , G02B6/4214 , G11B7/123 , Y10T428/12528
摘要： Method for manufacturing electromagnetic radiation reflecting devices, said method comprising the steps of: a) providing a silicon substrate defined by at least one first free surface, b) forming on said first surface a layer of protective material provided with an opening which exposes a region of the first free surface, and c)etching the region of the free surface by means of an anisotropic agent to remove at least one portion of the substrate and define a second free surface of the substrate inclined in relation to said first surface. Furthermore, said first free surface is parallel to the crystalline planes {110} of silicon substrate and said step (c) comprises a progressing step of the anisotropic agent such that the second free surface resulting from the etching step is parallel to the planes {100} of said substrate.
摘要翻译：用于制造电磁辐射反射装置的方法，所述方法包括以下步骤：a）提供由至少一个第一自由表面限定的硅衬底，b）在所述第一表面上形成一层保护材料，所述保护材料层具有暴露区域的第一自由表面，以及c）借助于各向异性剂蚀刻所述自由表面的区域以去除所述衬底的至少一部分并且限定所述衬底相对于所述第一表面倾斜的第二自由表面。此外，所述第一自由表面平行于硅衬底的晶面{110}，并且所述步骤（c）包括各向异性剂的进行步骤，使得由蚀刻步骤产生的第二自由表面平行于平面{100 }。

9. 发明申请

US20050142597A1 Integrated chemical microreactor with separated channels 有权
标题翻译：具有分离通道的集成化学微反应器
公开(公告)号：US20050142597A1
公开(公告)日：2005-06-30
申请号：US10997235
申请日：2004-11-24
申请人： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
发明人： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
IPC分类号： B01L3/00 , B01L7/00 , B81B3/00 , C12M1/34 , C12Q1/68 , H01L21/00
CPC分类号： B01L3/502715 , B01L3/5025 , B01L3/502707 , B01L7/52 , B01L2200/027 , B01L2200/12 , B01L2300/044 , B01L2300/0816 , B01L2300/1827
摘要： The microreactor is formed by a sandwich including a first body, an intermediate sealing layer and a second body. A buried channel extends in the first body and communicates with the surface of the first body through a first and a second apertures. A first and a second reservoirs are formed in the second body and are at least partially aligned with the first and second apertures. The sealing layer separates the first aperture from the first reservoir and the second aperture from the second reservoir, thereby avoiding contamination of liquids contained in the buried channel from the outside and from any adjacent buried channels. The sealing layer is perforated during use of the device, but a resilient plug can be used to reseal the device.
摘要翻译：微反应器由包括第一主体，中间密封层和第二主体的夹层形成。掩埋通道在第一主体中延伸并且通过第一和第二孔与第一主体的表面连通。第一和第二储存器形成在第二主体中并且至少部分地与第一和第二孔对准。密封层将第一孔与第一储存器和第二孔分隔开来自第二储存器，从而避免了从外部和任何相邻的埋入通道污染包含在掩埋通道中的液体。在使用该装置期间密封层是穿孔的，但是可以使用弹性塞来重新密封装置。

10. 发明授权

US07906321B2 Integrated semiconductor microreactor for real-time monitoring of biological reactions 有权
标题翻译：集成半导体微反应器，用于实时监测生物反应
公开(公告)号：US07906321B2
公开(公告)日：2011-03-15
申请号：US11009171
申请日：2004-12-10
申请人： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
发明人： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
IPC分类号： C12M1/34 , C12M3/00
CPC分类号： G01N21/6428 , B01J19/0093 , B01J2219/0097 , B01L3/502707 , B01L3/502715 , B01L7/52 , B01L2200/12 , B01L2300/0654 , B01L2300/0816 , G01N21/6454
摘要： An integrated semiconductor chemical microreactor for real-time polymerase chain reaction (PCR) monitoring, has a monolithic body of semiconductor material; a number of buried channels formed in the monolithic body; an inlet trench and an outlet trench for each buried channel; and a monitoring trench for each buried channel, extending between the inlet and outlet trenches thereof from the top surface of the monolithic body to the respective buried channel. Real-time PCR monitoring is carried out by channeling light beams into the buried channels, possibly through one of the inlet or outlet trenches, whereby the light beams impinge on the fluid therein and collecting the emergent light coming out from the monitoring trench.
摘要翻译：一种用于实时聚合酶链反应（PCR）监测的集成半导体化学微反应器，具有半导体材料的整体; 形成在整体式主体中的多个埋入通道; 每个掩埋通道的入口沟槽和出口沟槽; 以及用于每个掩埋通道的监测沟槽，其在其入口和出口沟槽之间从单体主体的顶表面延伸到相应的掩埋通道。通过将光束通过入口或出口沟槽中的一个引入到掩埋通道中，从而使光束照射在其中的流体并收集从监测沟槽出来的出射光，从而进行实时PCR监测。

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