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    • 4. 发明授权
    • Inexpensive method of manufacturing an SOI wafer
    • 制造SOI晶片的廉价方法
    • US06350657B1
    • 2002-02-26
    • US09359870
    • 1999-07-26
    • Ubaldo MastromatteoFlavio VillaGabriele Barlocchi
    • Ubaldo MastromatteoFlavio VillaGabriele Barlocchi
    • H01L21311
    • H01L21/3065H01L21/7624H01L21/76262
    • A method of manufacturing an SOI (silicon on insulator) wafer includes the step of selective anisotropic etching to form, in the substrate, trenches which extend to a predetermined depth from a major surface of the substrate and between which pillar portions of the substrate are defined. The method further includes the step of selective isotropic etching to enlarge the trenches, starting at a predetermined distance from the major surface, thus reducing the thicknesses of the pillar portions of the substrate between adjacent trenches. Also, the method includes the steps of selective oxidation to convert the pillar portions of reduced thickness of the substrate into silicon dioxide and to fill the trenches with silicon dioxide, starting substantially from the predetermined distance, and epitaxial growth of a silicon layer on the major surface of the substrate. The method permits more freedom in the selection of the dimensional ratios between the trenches and the pillars and thus enables the necessary crystallographic quality of the epitaxial layer to be achieved, ensuring a continuous buried oxide layer.
    • 制造SOI(绝缘体上硅)晶片的方法包括选择性各向异性蚀刻的步骤,以在衬底中形成从衬底的主表面延伸到预定深度并且在衬底的哪个柱部分被限定的沟槽之间 。 该方法还包括选择性各向同性蚀刻步骤,以从主表面预定距离开始扩大沟槽,从而减小相邻沟槽之间的衬底的柱部分的厚度。 此外,该方法包括以下步骤:选择性氧化以将衬底的厚度的柱部分转换为二氧化硅,并且以基本上从预定距离开始的二氧化硅填充沟槽,以及主层上的硅层的外延生长 基板的表面。 该方法允许在选择沟槽和柱之间的尺寸比例时更多的自由度,并且因此能够实现外延层的必要的晶体学质量,确保连续的掩埋氧化物层。