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    • 8. 发明授权
    • SOI radio frequency switch with enhanced electrical isolation
    • SOI射频开关具有增强的电气隔离
    • US08866226B2
    • 2014-10-21
    • US13345871
    • 2012-01-09
    • Alan B. BotulaAlvin J. JosephEdward J. NowakYun ShiJames A. Slinkman
    • Alan B. BotulaAlvin J. JosephEdward J. NowakYun ShiJames A. Slinkman
    • H01L27/12H01L21/84H01L21/762
    • H01L21/84H01L21/76264H01L27/1203
    • At least one conductive via structure is formed from an interconnect-level metal line through a middle-of-line (MOL) dielectric layer, a shallow trench isolation structure in a top semiconductor layer, and a buried insulator layer to a bottom semiconductor layer. The shallow trench isolation structure laterally abuts at least two field effect transistors that function as a radio frequency (RF) switch. The at least one conductive via structure and the at interconnect-level metal line may provide a low resistance electrical path from the induced charge layer in a bottom semiconductor layer to electrical ground, discharging the electrical charge in the induced charge layer. The discharge of the charge in the induced charge layer thus reduces capacitive coupling between the semiconductor devices and the bottom semiconductor layer, and thus secondary coupling between components electrically disconnected by the RF switch is reduced.
    • 至少一个导电通孔结构由通过中间线(MOL)电介质层的互连级金属线,顶部半导体层中的浅沟槽隔离结构和到半导体层的掩埋绝缘体层形成。 浅沟槽隔离结构横向邻接用作射频(RF)开关的至少两个场效应晶体管。 所述至少一个导电通孔结构和所述互连级金属线可以提供从底部半导体层中的感应电荷层到电接地的低电阻电路径,从而对感应电荷层中的电荷进行放电。 感应电荷层中的电荷的放电因此减小了半导体器件与底部半导体层之间的电容耦合,因此降低了由RF开关电断开的部件之间的二次耦合。