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    • 4. 发明授权
    • Ultrashort pulse laser machining of metals and alloys
    • 超短脉冲激光加工金属和合金
    • US06621040B1
    • 2003-09-16
    • US08859020
    • 1997-05-20
    • Michael D. PerryBrent C. Stuart
    • Michael D. PerryBrent C. Stuart
    • B23K2636
    • B23K26/0665A61B18/20A61B18/26A61B2018/00636A61C1/0046B23K26/032B23K26/0624B23K26/0643B23K26/0648B23K26/18B23K26/40B23K2103/05B23K2103/10B23K2103/30B23K2103/50C06B21/0033
    • The invention consists of a method for high precision machining (cutting, drilling, sculpting) of metals and alloys. By using pulses of a duration in the range of 10 femtoseconds to 100 picoseconds, extremely precise machining can be achieved with essentially no heat or shock affected zone. Because the pulses are so short, there is negligible thermal conduction beyond the region removed resulting in negligible thermal stress or shock to the material beyond approximately 0.1-1 micron (dependent upon the particular material) from the laser machined surface. Due to the short duration, the high intensity (>1012 W/cm2) associated with the interaction converts the material directly from the solid-state into an ionized plasma. Hydrodynamic expansion of the plasma eliminates the need for any ancillary techniques to remove material and produces extremely high quality machined surfaces with negligible redeposition either within the kerf or on the surface. Since there is negligible heating beyond the depth of material removed, the composition of the remaining material is unaffected by the laser machining process. This enables high precision machining of alloys and even pure metals with no change in grain structure.
    • 本发明包括金属和合金的高精度加工(切割,钻孔,雕刻)的方法。 通过使用持续时间在10飞秒至100皮秒范围内的脉冲,可以在基本上没有受热或冲击影响的区域实现非常精确的加工。 由于脉冲非常短,所以除去区域之外的热传导可忽略不计,导致材料的热应力可忽略不计或超过激光加工表面的大约0.1-1微米(取决于具体材料)的冲击。 由于持续时间短,与相互作用相关的高强度(> 1012W / cm2)将材料直接从固态转变为电离等离子体。 等离子体的流体动力学膨胀消除了任何辅助技术去除材料和产生极高质量的加工表面的需要,在切口或表面上可忽略不计的再沉积。 由于除了去除材料的深度之外的加热可以忽略不计,剩余材料的组成不受激光加工过程的影响。 这使得能够在不改变晶粒结构的情况下对合金甚至纯金属进行高精度加工。
    • 5. 发明授权
    • Ultrashort pulse laser deposition of thin films
    • 超短脉冲激光沉积薄膜
    • US06372103B1
    • 2002-04-16
    • US09568617
    • 2000-05-10
    • Michael D. PerryPaul S. BanksBrent C. Stuart
    • Michael D. PerryPaul S. BanksBrent C. Stuart
    • C23C1434
    • C23C14/28B23K26/0624C23C14/0605
    • Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp3/Sp2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 &mgr;m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.
    • 短脉冲PLD是生产具有非常接近结晶金刚石的性能的高质量薄膜的可行技术。 使用飞秒激光器产生的等离子体由单个原子离子组成,没有产生具有高Sp3 / Sp2比率的膜的簇。 使用高平均功率的飞秒激光系统,当生长无颗粒的膜时,本发明显着地将沉积速率提高到高达25mum / hr(其超过许多CVD工艺)。 在本发明中,沉积速率是激光波长,激光能量密度,激光光斑尺寸和靶/衬底分离的函数。 显示相关的激光参数以确保无颗粒生长,并且使用包括电子能量损失光谱(EELS)和拉曼光谱学的几种诊断技术来制备生长的膜的表征。