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    • 2. 发明授权
    • Ganged scanning of multiple magnetrons, especially two level folded magnetrons
    • 组合扫描多个磁控管,特别是两个级别的磁控管
    • US08961756B2
    • 2015-02-24
    • US11780757
    • 2007-07-20
    • Makoto InagawaHien Minh Huu LeAkihiro HosokawaBradley O. StimsonJohn M. White
    • Makoto InagawaHien Minh Huu LeAkihiro HosokawaBradley O. StimsonJohn M. White
    • C23C14/35H01J37/34
    • H01J37/3408H01J37/3455
    • A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.
    • 磁控管组件包括一个或多个磁控管,每个磁控管在靶的溅射面上形成封闭的等离子体环。 目标可以包括多个条带目标,相应的带状磁控管在其上滚动并且通过弹簧机构部分地支撑在公共支撑板上。 带状磁控管可以是两级折叠​​磁控管,其中每个磁控管形成在条带靶的侧面之间延伸的折叠等离子体环,并且其端部在目标的中间相遇。 形成磁控管的磁体可以布置成具有通过弯曲部分连接的具有大致均匀的直线部分的图案,其中在角附近提供额外的磁体位置以引导等离子体轨道。 多个可能是柔性的磁控管可以弹性地支撑在扫描的支撑板上,并且单独部分地由一个或多个靶的背面上的辊支撑。
    • 3. 发明申请
    • MAGNETRON ASSEMBLY
    • MAGNETRON装配
    • US20080023319A1
    • 2008-01-31
    • US11769924
    • 2007-06-28
    • HIEN MINH HUU LEBradley O. StimsonMakoto InagawaJohn M. White
    • HIEN MINH HUU LEBradley O. StimsonMakoto InagawaJohn M. White
    • C23C14/35
    • H01J37/3408H01J37/3455
    • The present invention discloses a physical vapor deposition apparatus and a method for sputtering. When sputtering from a plurality of sputtering targets, a plurality of magnetrons may be used. The number of magnetrons may correspond to the number of targets. Each magnetron may be different to control the amount of material deposited from each sputtering target and the specific location on the sputtering target that is sputtered. The magnetrons may be spaced a different distance from the backing plate and hence, the target. The magnetrons may be of different sizes. The magnetrons may have a different magnetic path. The magnetrons may have a different pitch. The magnetrons may have a different magnitude. By tailoring the distance, size, path, pitch, and magnitude, uniform sputtering and target erosion may be achieved.
    • 本发明公开了一种物理气相沉积装置和溅射方法。 当从多个溅射靶溅射时,可以使用多个磁控管。 磁控管的数量可以对应于目标的数量。 每个磁控管可以不同以控制从每个溅射靶沉积的材料的数量和溅射的溅射靶上的特定位置。 磁控管可以与背板间隔开不同的距离,因此与目标物隔开。 磁控管可能具有不同的尺寸。 磁控管可以具有不同的磁路。 磁控管可能具有不同的音调。 磁控管可能具有不同的大小。 通过调整距离,尺寸,路径,​​间距和幅度,可以实现均匀的溅射和目标侵蚀。
    • 5. 发明申请
    • RPSC AND RF FEEDTHROUGH
    • RPSC和RF FEEDTHROUGH
    • US20090151636A1
    • 2009-06-18
    • US12271613
    • 2008-11-14
    • John M. WhiteBradley O. StimsonJozef Kudela
    • John M. WhiteBradley O. StimsonJozef Kudela
    • C23C16/513C23C16/511
    • H01J37/32697H01J37/32091H01J37/32192H01J37/32357H01J37/32862
    • The present invention generally comprises an apparatus having an RF choke and a remote plasma source combined into a single unit. Process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube may provide process gases and the cleaning gases to the process chamber. The inside of the gas feed tube may remain at a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead during processing. Igniting the cleaning gas plasma within the gas feed tube permits the plasma to be ignited closer to the processing chamber. Thus, RF current travels along the outside of the apparatus during deposition and microwave current ignites a plasma within the apparatus before feeding the plasma to the processing chamber.
    • 本发明通常包括具有组合成单个单元的RF扼流圈和远程等离子体源的装置。 工艺气体可以经由可被作为RF电极驱动的喷头组件引入室。 气体供给管可以将处理气体和清洁气体提供给处理室。 气体供给管的内部可以保持在零RF场,以避免气体进料管内的过早气体击穿,这可能在处理期间导致气体源和喷头之间的寄生等离子体形成。 点燃气体供给管内的清洁气体等离子体允许等离子体更靠近处理室被点燃。 因此,RF电流在沉积期间沿着设备的外部行进,并且在将等离子体馈送到处理室之前,微波电流点燃设备内的等离子体。