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1. 发明专利

JP2000299309A PLASMA GENERATOR AND PLASMA TREATMENT SYSTEM PROVIDED WITH THE SAME 失效
公开(公告)号：JP2000299309A
公开(公告)日：2000-10-24
申请号：JP11008699
申请日：1999-04-16
申请人： JOZEF KUDELA , IGOR ODROBINA , SHINDO MASASHI , ANELVA CORP
发明人： JOZEF KUDELA , IGOR ODOUROBINA , SHINDO MASASHI , TSUKADA TSUTOMU , NAKAGAWA KOJIN
IPC分类号： H01L21/302 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To generate uniform high-density plasma to a necessary region and to highly efficiently perform high-quality plasma treatment. SOLUTION: A high frequency generated by means of a high-frequency power source 21 is supplied to a resonator 24 to resonate the resonator 24 via a matching device 26, a waveguie 23, and through a coaxial line 25 and introduced to a plasma generating vessel 1 from a high-frequency introducing section 22 which is set up coaxially to the resonator 24, and plasma is generated from the gas in the vessel 1. A substrate 9 is held coaxially to the resonator 24 on a substrate holder 3 in the vessel 1 and treated with the plasma. In the vessel 1, three regulating elements 51, 52, and 53, which regulate the propagation of the high frequency in the direction receding from the axis are provided coaxially and regulate the propagation of the high frequency on a principle similar to that of a totally reflecting symmetrical T-shape coupled circuit. Since the end plates 513, 523, and 533 of the elements 51, 52, and 53 can be displaced separately, the regulation of the high frequency by means of the elements 51, 52, and 53 is controlled independently.

2. 发明专利

JP4847636B2 Plasma generator and a plasma processing apparatus including the plasma generator 有权
标题翻译：空值
公开(公告)号：JP4847636B2
公开(公告)日：2011-12-28
申请号：JP11008699
申请日：1999-04-16
申请人：イゴールオドゥロビナIgor Odrobina , ヨゼフクデラJozef Kudela , 正士神藤
发明人：オドゥロビナイゴール , クデラヨゼフ , 行人中川 , 勉塚田 , 正士神藤
IPC分类号： H01L21/302 , H01L21/3065 , C23C16/511 , C23F4/00 , H01L21/205 , H05H1/46

3. 发明授权

US08691047B2 Large area plasma processing chamber with at-electrode RF matching 有权
标题翻译：大面积等离子体处理室，具有电极RF匹配
公开(公告)号：US08691047B2
公开(公告)日：2014-04-08
申请号：US12948164
申请日：2010-11-17
申请人： Carl A. Sorensen , John M. White , Jozef Kudela
发明人： Carl A. Sorensen , John M. White , Jozef Kudela
IPC分类号： C23C16/505 , H01L21/3065
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32183
摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
摘要翻译：提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。基板支撑件设置在室主体中限定的处理空间中。电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

4. 发明申请

US20130206068A1 LINEAR PECVD APPARATUS 审中-公开
标题翻译：线性PECVD设备
公开(公告)号：US20130206068A1
公开(公告)日：2013-08-15
申请号：US13764832
申请日：2013-02-12
申请人： Jozef KUDELA , Suhail ANWAR , Carl A. SORENSEN , Douglas TRUONG , John M. WHITE
发明人： Jozef KUDELA , Suhail ANWAR , Carl A. SORENSEN , Douglas TRUONG , John M. WHITE
IPC分类号： C23C16/511
CPC分类号： C23C16/511 , C23C16/54
摘要： The present invention generally relates to a linear PECVD apparatus. The apparatus is designed to process two substrates simultaneously so that the substrates share plasma sources as well as gas sources. The apparatus has a plurality of microwave sources centrally disposed within the chamber body of the apparatus. The substrates are disposed on opposite sides of the microwave sources with the gas sources disposed between the microwave sources and the substrates. The shared microwave sources and gas sources permit multiple substrates to be processed simultaneously and reduce the processing cost per substrate.
摘要翻译：本发明一般涉及线性PECVD装置。该设备被设计成同时处理两个基板，使得基板共享等离子体源以及气体源。该装置具有集中设置在该装置的室主体内的多个微波源。基板设置在微波源的相对侧上，气源设置在微波源和基板之间。共享的微波源和气源允许同时处理多个基板，并降低每个基板的加工成本。

5. 发明申请

US20130068161A1 GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR 审中-公开
标题翻译：直线式大面积等离子体反应器中均匀工艺的气体输送和分配
公开(公告)号：US20130068161A1
公开(公告)日：2013-03-21
申请号：US13538389
申请日：2012-06-29
申请人： John M. White , Suhail Anwar , Jozef Kudela , Carl A. Sorensen , Tae K. Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Benjamin M. Johnston
发明人： John M. White , Suhail Anwar , Jozef Kudela , Carl A. Sorensen , Tae K. Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Benjamin M. Johnston
IPC分类号： C23C16/455 , B05B1/14
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4587 , C23C16/511 , C23C16/513 , C23C16/54
摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.
摘要翻译：一种用于将气体引入处理室的装置，包括一个或多个具有气体注入孔的气体分配管，所述气体分配管的尺寸更大，数量更多，和/或在气体导入管的部分处更靠近在一起，其中较大的气体导通通过需要喷气孔。具有较大气体注入孔的外管可围绕每个气体分配管。气体分配管可以流体连接到真空前级管线，以便于在处理循环结束时从气体分配管中除去气体。

6. 发明申请

US20120031333A1 VERTICAL INLINE CVD SYSTEM 有权
公开(公告)号：US20120031333A1
公开(公告)日：2012-02-09
申请号：US13098253
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： H01L21/677 , C23C16/511 , B25J9/00 , C23C16/44
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

7. 发明授权

US08075734B2 Remote inductively coupled plasma source for CVD chamber cleaning 有权
标题翻译：用于CVD室清洁的远程感应耦合等离子体源
公开(公告)号：US08075734B2
公开(公告)日：2011-12-13
申请号：US12114127
申请日：2008-05-02
申请人： Carl A. Sorensen , Jozef Kudela
发明人： Carl A. Sorensen , Jozef Kudela
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/4405 , H01J37/321 , H01J37/32357 , H01J37/32862 , H05H1/46
摘要： The present invention generally includes a remote plasma source and a method of generating a plasma in a remote plasma source. Cleaning gas may be ignited into a plasma in a remote location and then provided to the processing chamber. By flowing the cleaning gas outside of a cooled RF coil, a plasma may be ignited at either high or low pressure while providing a high RF bias to the coil. Cooling the RF coil may reduce sputtering of the coil and thus reduce undesirable contaminants from being fed to the processing chamber with the cleaning gas plasma. Reduced sputtering from the coil may extend the useful life of the remote plasma source.
摘要翻译：本发明通常包括远程等离子体源和在远程等离子体源中产生等离子体的方法。清洁气体可以被点燃到远程位置的等离子体中，然后提供给处理室。通过将清洁气体流过冷却的RF线圈外，可以在高压或低压下点燃等离子体，同时向线圈提供高RF偏压。冷却RF线圈可以减少线圈的溅射，从而减少不期望的污染物从清洁气体等离子体送入处理室。从线圈减少的溅射可延长远程等离子体源的使用寿命。

8. 发明申请

US20090159423A1 Asymmetrical RF Drive for Electrode of Plasma Chamber 有权
标题翻译：等离子室电极的非对称RF驱动
公开(公告)号：US20090159423A1
公开(公告)日：2009-06-25
申请号：US12343519
申请日：2008-12-24
申请人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： H05H1/00 , H01L21/3065 , B23H7/14
CPC分类号： H01L21/02 , B44C1/227 , C23C16/513 , H01J37/32091 , H01J37/32577 , H01L21/02104
摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.
摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话）。或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

9. 发明授权

US09922854B2 Vertical inline CVD system 有权
公开(公告)号：US09922854B2
公开(公告)日：2018-03-20
申请号：US13098253
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01J37/32 , H01L21/67 , H01L21/677
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

10. 发明授权

US09048518B2 Transmission line RF applicator for plasma chamber 有权
标题翻译：用于等离子体室的传输线RF施加器
公开(公告)号：US09048518B2
公开(公告)日：2015-06-02
申请号：US13507383
申请日：2012-06-21
申请人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White , Ranjit Indrajit Shinde , Seon-Mee Cho , Douglas D. Truong
发明人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White , Ranjit Indrajit Shinde , Seon-Mee Cho , Douglas D. Truong
IPC分类号： H01J17/26 , H01J61/28 , H01P3/00 , H05H1/24 , H01P11/00 , H01J37/32 , H05H1/46 , H01P3/06 , H01P3/08 , H01Q13/22
CPC分类号： H01J37/32082 , H01J37/3222 , H01J37/32577 , H01P3/00 , H01P3/06 , H01P3/085 , H01P11/003 , H01Q13/22 , H05H1/24 , H05H1/46 , H05H2001/463 , Y10T29/49169
摘要： A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.
摘要翻译：用于将RF功率耦合到等离子体室中的等离子体的传输线RF施加装置和方法。该装置包括内部导体和一个或两个外部导体。一个或两个外部导体中的每一个的主要部分包括在外部导体的内表面和外表面之间延伸的多个孔。

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