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1. 发明申请

US20090151636A1 RPSC AND RF FEEDTHROUGH 审中-公开
标题翻译： RPSC和RF FEEDTHROUGH
公开(公告)号：US20090151636A1
公开(公告)日：2009-06-18
申请号：US12271613
申请日：2008-11-14
申请人： John M. White , Bradley O. Stimson , Jozef Kudela
发明人： John M. White , Bradley O. Stimson , Jozef Kudela
IPC分类号： C23C16/513 , C23C16/511
CPC分类号： H01J37/32697 , H01J37/32091 , H01J37/32192 , H01J37/32357 , H01J37/32862
摘要： The present invention generally comprises an apparatus having an RF choke and a remote plasma source combined into a single unit. Process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube may provide process gases and the cleaning gases to the process chamber. The inside of the gas feed tube may remain at a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead during processing. Igniting the cleaning gas plasma within the gas feed tube permits the plasma to be ignited closer to the processing chamber. Thus, RF current travels along the outside of the apparatus during deposition and microwave current ignites a plasma within the apparatus before feeding the plasma to the processing chamber.
摘要翻译：本发明通常包括具有组合成单个单元的RF扼流圈和远程等离子体源的装置。工艺气体可以经由可被作为RF电极驱动的喷头组件引入室。气体供给管可以将处理气体和清洁气体提供给处理室。气体供给管的内部可以保持在零RF场，以避免气体进料管内的过早气体击穿，这可能在处理期间导致气体源和喷头之间的寄生等离子体形成。点燃气体供给管内的清洁气体等离子体允许等离子体更靠近处理室被点燃。因此，RF电流在沉积期间沿着设备的外部行进，并且在将等离子体馈送到处理室之前，微波电流点燃设备内的等离子体。

2. 发明授权

US08691047B2 Large area plasma processing chamber with at-electrode RF matching 有权
标题翻译：大面积等离子体处理室，具有电极RF匹配
公开(公告)号：US08691047B2
公开(公告)日：2014-04-08
申请号：US12948164
申请日：2010-11-17
申请人： Carl A. Sorensen , John M. White , Jozef Kudela
发明人： Carl A. Sorensen , John M. White , Jozef Kudela
IPC分类号： C23C16/505 , H01L21/3065
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32183
摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
摘要翻译：提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。基板支撑件设置在室主体中限定的处理空间中。电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

3. 发明申请

US20130068161A1 GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR 审中-公开
标题翻译：直线式大面积等离子体反应器中均匀工艺的气体输送和分配
公开(公告)号：US20130068161A1
公开(公告)日：2013-03-21
申请号：US13538389
申请日：2012-06-29
申请人： John M. White , Suhail Anwar , Jozef Kudela , Carl A. Sorensen , Tae K. Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Benjamin M. Johnston
发明人： John M. White , Suhail Anwar , Jozef Kudela , Carl A. Sorensen , Tae K. Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Benjamin M. Johnston
IPC分类号： C23C16/455 , B05B1/14
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4587 , C23C16/511 , C23C16/513 , C23C16/54
摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.
摘要翻译：一种用于将气体引入处理室的装置，包括一个或多个具有气体注入孔的气体分配管，所述气体分配管的尺寸更大，数量更多，和/或在气体导入管的部分处更靠近在一起，其中较大的气体导通通过需要喷气孔。具有较大气体注入孔的外管可围绕每个气体分配管。气体分配管可以流体连接到真空前级管线，以便于在处理循环结束时从气体分配管中除去气体。

4. 发明申请

US20120031333A1 VERTICAL INLINE CVD SYSTEM 有权
公开(公告)号：US20120031333A1
公开(公告)日：2012-02-09
申请号：US13098253
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： H01L21/677 , C23C16/511 , B25J9/00 , C23C16/44
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

5. 发明申请

US20090159423A1 Asymmetrical RF Drive for Electrode of Plasma Chamber 有权
标题翻译：等离子室电极的非对称RF驱动
公开(公告)号：US20090159423A1
公开(公告)日：2009-06-25
申请号：US12343519
申请日：2008-12-24
申请人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： H05H1/00 , H01L21/3065 , B23H7/14
CPC分类号： H01L21/02 , B44C1/227 , C23C16/513 , H01J37/32091 , H01J37/32577 , H01L21/02104
摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.
摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话）。或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

6. 发明授权

US09397380B2 Guided wave applicator with non-gaseous dielectric for plasma chamber 有权
标题翻译：带等离子体室的非气体介质的导波器
公开(公告)号：US09397380B2
公开(公告)日：2016-07-19
申请号：US13360652
申请日：2012-01-27
申请人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
发明人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
IPC分类号： H01P3/16 , H01L21/02 , H05H1/46 , H01J37/32
CPC分类号： H01P3/16 , H01J37/32229 , H01L21/02 , H01L21/02104 , H05H1/46 , H05H2001/4622
摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.
摘要翻译：导波装置，其包括两个导电波导壁和波导电介质。波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

7. 发明授权

US09324597B2 Vertical inline CVD system 有权
标题翻译：垂直在线CVD系统
公开(公告)号：US09324597B2
公开(公告)日：2016-04-26
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： H01J37/32 , H01L21/67 , C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01L21/677
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

8. 发明授权

US08906813B2 SiOx process chemistry development using microwave plasma CVD 有权
标题翻译：使用微波等离子体CVD的SiOx工艺化学开发
公开(公告)号：US08906813B2
公开(公告)日：2014-12-09
申请号：US13886175
申请日：2013-05-02
申请人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
发明人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
IPC分类号： H01L21/31 , H01L21/02 , C23C16/40 , C23C16/455 , C23C16/511 , C23C16/54
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

9. 发明申请

US20120031335A1 VERTICAL INLINE CVD SYSTEM 有权
标题翻译：立式CVD系统
公开(公告)号：US20120031335A1
公开(公告)日：2012-02-09
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： C23C16/511 , C23C16/458 , C23C16/455
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

10. 发明申请

US20110135844A1 LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING 有权
标题翻译：大面积等离子体加工室与电极射频匹配
公开(公告)号：US20110135844A1
公开(公告)日：2011-06-09
申请号：US12948164
申请日：2010-11-17
申请人： Carl A. Sorensen , John M. White , Jozef Kudela
发明人： Carl A. Sorensen , John M. White , Jozef Kudela
IPC分类号： C23C16/24 , C23C16/455 , C23C16/458 , C23C16/505 , C23C16/509 , C23C16/52
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32183
摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
摘要翻译：提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。基板支撑件设置在室主体中限定的处理空间中。电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

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