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1. 发明授权

US08674844B2 Detecting plasma chamber malfunction 有权
标题翻译：检测等离子体室故障
公开(公告)号：US08674844B2
公开(公告)日：2014-03-18
申请号：US12661699
申请日：2010-03-19
申请人： Beom Soo Park , Hong Soon Kim , Soo Young Choi , James Hoffman , Suhail Anwar , John M. White
发明人： Beom Soo Park , Hong Soon Kim , Soo Young Choi , James Hoffman , Suhail Anwar , John M. White
IPC分类号： G08B21/00
CPC分类号： H01J37/32183 , H01J37/32935 , H01J37/3299
摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.
摘要翻译：通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

2. 发明申请

US20100245084A1 Detecting plasma chamber malfunction 有权
标题翻译：检测等离子体室故障
公开(公告)号：US20100245084A1
公开(公告)日：2010-09-30
申请号：US12661699
申请日：2010-03-19
申请人： Beom Soo Park , Hong Soon Kim , Soo Young Choi , James Hoffman , Suhail Anwar , John M. White
发明人： Beom Soo Park , Hong Soon Kim , Soo Young Choi , James Hoffman , Suhail Anwar , John M. White
IPC分类号： G08B21/00
CPC分类号： H01J37/32183 , H01J37/32935 , H01J37/3299
摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.
摘要翻译：通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

3. 发明授权

US08174400B2 Frequency monitoring to detect plasma process abnormality 有权
标题翻译：频率监测检测等离子体过程异常
公开(公告)号：US08174400B2
公开(公告)日：2012-05-08
申请号：US13042408
申请日：2011-03-07
申请人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
发明人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
IPC分类号： G08B21/00
CPC分类号： H01J37/32174 , H01J37/32935 , H03H7/40
摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
摘要翻译：通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。在第二方面，第二对下限和上限不适合电源的频率。两个方面优选一起用于检测异常状况的不同出现。

4. 发明授权

US07902991B2 Frequency monitoring to detect plasma process abnormality 有权
标题翻译：频率监测检测等离子体过程异常
公开(公告)号：US07902991B2
公开(公告)日：2011-03-08
申请号：US11682290
申请日：2007-03-05
申请人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
发明人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
IPC分类号： G08B21/00
CPC分类号： H01J37/32174 , H01J37/32935 , H03H7/40
摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
摘要翻译：通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。在第二方面，第二对下限和上限不适合电源的频率。两个方面优选一起用于检测异常状况的不同出现。

5. 发明申请

US20110241892A1 Frequency Monitoring to Detect Plasma Process Abnormality 有权
标题翻译：频率监测检测等离子体过程异常
公开(公告)号：US20110241892A1
公开(公告)日：2011-10-06
申请号：US13042408
申请日：2011-03-07
申请人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
发明人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
IPC分类号： G08B21/00 , G01R13/14
CPC分类号： H01J37/32174 , H01J37/32935 , H03H7/40
摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
摘要翻译：通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。在第二方面，第二对下限和上限不适合电源的频率。两个方面优选一起用于检测异常状况的不同出现。

6. 发明申请

US20080074255A1 Frequency Monitoring to Detect Plasma Process Abnormality 有权
标题翻译：频率监测检测等离子体过程异常
公开(公告)号：US20080074255A1
公开(公告)日：2008-03-27
申请号：US11682290
申请日：2007-03-05
申请人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
发明人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
IPC分类号： G08B21/00
CPC分类号： H01J37/32174 , H01J37/32935 , H03H7/40
摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
摘要翻译：通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。在第二方面，第二对下限和上限不适合电源的频率。两个方面优选一起用于检测异常状况的不同出现。

7. 发明授权

US08083853B2 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US08083853B2
公开(公告)日：2011-12-27
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/00 , C23C16/455 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

8. 发明申请

US20090258162A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20090258162A1
公开(公告)日：2009-10-15
申请号：US12422183
申请日：2009-04-10
申请人： GAKU FURUTA , Young-Jin Choi , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Robin L. Tiner
发明人： GAKU FURUTA , Young-Jin Choi , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Robin L. Tiner
IPC分类号： C23C16/44 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32357 , C23C16/4405 , C23C16/507 , H01J37/3244 , H01J2237/3321
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

9. 发明申请

US20090107955A1 OFFSET LINER FOR CHAMBER EVACUATION 审中-公开
标题翻译：用于室内休闲的偏心衬里
公开(公告)号：US20090107955A1
公开(公告)日：2009-04-30
申请号：US12205414
申请日：2008-09-05
申请人： ROBIN L. TINER , Suhail Anwar , Gaku Furuta , Young Jin Choi , Beom Soo Park , Soo Young Choi , John M. White
发明人： ROBIN L. TINER , Suhail Anwar , Gaku Furuta , Young Jin Choi , Beom Soo Park , Soo Young Choi , John M. White
IPC分类号： B44C1/22 , C23C16/455 , C23C16/44 , C23F1/08
CPC分类号： H01J37/32357 , C23C16/4404 , H01J37/32449 , H01J37/32623 , H01J37/32834
摘要： The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced.
摘要翻译：本发明通常包括与室壁间隔开的腔室衬套，以便当从处理腔室排出气体时允许处理气体在腔室衬套和室壁之间被拉动。当真空泵在基座下方时，处理气体将被拉到基座下方，并可能导致不希望的沉积到处理室部件上。此外，处理气体将被拉过狭缝阀开口并可能沉积在狭缝阀开口内。当材料沉积在狭缝阀开口中时，会发生剥落并污染基板。通过沿着具有狭缝阀开口的侧壁以外的侧壁吸收处理气体，可以减少狭缝阀开口上的不期望的沉积。

10. 发明授权

US07589031B2 Method of avoiding haze formation on surfaces of silicon-containing PECVD-deposited thin films 有权
标题翻译：在含硅PECVD沉积薄膜的表面上避免雾霾形成的方法
公开(公告)号：US07589031B2
公开(公告)日：2009-09-15
申请号：US11607702
申请日：2006-12-01
申请人： Suhail Anwar , Chung-Hee Park , Beom Soo Park , Han Byoul Kim , Soo Young Choi , John M. White
发明人： Suhail Anwar , Chung-Hee Park , Beom Soo Park , Han Byoul Kim , Soo Young Choi , John M. White
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , C23C16/345 , H01L21/0217 , H01L21/02532 , H01L21/0262 , H01L21/3185 , H01L21/67161 , H01L21/67207 , H01L21/67236 , H01L29/66765 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.
摘要翻译：已经发现并进一步开发了含硅膜的PECVD沉积方法。当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法是特别有用的。该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从等离子处理区。

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