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1. 发明授权

US5957751A Carrier head with a substrate detection mechanism for a chemical mechanical polishing system 失效
公开(公告)号：US5957751A
公开(公告)日：1999-09-28
申请号：US862350
申请日：1997-05-23
申请人： Boris Govzman , Steven M. Zuniga , Hung Chen , Sasson Somekh
发明人： Boris Govzman , Steven M. Zuniga , Hung Chen , Sasson Somekh
IPC分类号： B24B37/005 , B24B37/30 , H01L21/304 , B24B49/00
CPC分类号： B24B37/30 , B24B37/0053
摘要： A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

2. 发明授权

US06517415B2 Carrier head with a substrate detection mechanism for a chemical mechanical polishing system 有权
公开(公告)号：US06517415B2
公开(公告)日：2003-02-11
申请号：US09989498
申请日：2001-11-19
申请人： Boris Govzman , Steven M. Zuniga , Hung Chen , Sasson Somekh
发明人： Boris Govzman , Steven M. Zuniga , Hung Chen , Sasson Somekh
IPC分类号： B24B4900
CPC分类号： B24B37/30 , B24B37/0053
摘要： A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

3. 发明授权

US08079894B2 Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion 有权
标题翻译：化学机械抛光系统具有多个抛光台并提供相对的线性抛光运动
公开(公告)号：US08079894B2
公开(公告)日：2011-12-20
申请号：US12581049
申请日：2009-10-16
申请人： Robert D. Tolles , Norman Shendon , Sasson Somekh , Ilya Perlov , Eugene Gantvarg , Harry Q. Lee
发明人： Robert D. Tolles , Norman Shendon , Sasson Somekh , Ilya Perlov , Eugene Gantvarg , Harry Q. Lee
IPC分类号： B24B7/22
CPC分类号： H01L21/67057 , B08B1/007 , B24B27/0023 , B24B37/30 , B24B37/345 , B24B41/005 , B24B53/017 , B24B57/02 , H01L21/30625 , H01L21/67051
摘要： A chemical-mechanical polishing apparatus including a table top, a transfer station mounted on the table top, a plurality of polishing stations mounted on the table top, a plurality of washing stations, and a plurality of carrier heads supported by a support member rotatable about an axis. Each washing station is located between a first polishing station and either a second polishing station or the transfer station, and the transfer station and the plurality of polishing stations are arranged at approximately equal angular intervals about the axis.
摘要翻译：一种化学机械抛光装置，包括台面，安装在桌面上的转印站，安装在桌面上的多个抛光站，多个洗涤站以及由可围绕一个轴。每个洗涤站位于第一抛光站和第二抛光站或转移站之间，并且传送站和多个抛光站围绕轴线以大致相等的角度间隔布置。

4. 发明申请

US20080085477A1 Method and apparatus for processing a wafer 审中-公开
标题翻译：用于处理晶片的方法和装置
公开(公告)号：US20080085477A1
公开(公告)日：2008-04-10
申请号：US11977833
申请日：2007-10-26
申请人： Steven Verhaverbeke , J. Truman , Christopher Lane , Sasson Somekh
发明人： Steven Verhaverbeke , J. Truman , Christopher Lane , Sasson Somekh
IPC分类号： G03F1/10
CPC分类号： H01L21/67207 , G03F7/16 , H01L21/67115 , H01L21/67161 , H01L21/67173 , H01L21/67184 , H01L21/6719 , Y10S414/135 , Y10S414/141 , Y10S438/905
摘要： A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.
摘要翻译：一种单晶片湿式/干式清洗设备的方法，包括：一个传送室，其中包含一个晶片处理器; 直接耦合到传送室的第一单晶片湿清洁室; 以及直接耦合到传送室的第一单个晶片灰化室。

5. 发明授权

US06896776B2 Method and apparatus for electro-chemical processing 失效
标题翻译：电化学处理方法和装置
公开(公告)号：US06896776B2
公开(公告)日：2005-05-24
申请号：US09739139
申请日：2000-12-18
申请人： Wei-Yung Hsu , Liang-Yuh Chen , Ratson Morad , Daniel A. Carl , Sasson Somekh
发明人： Wei-Yung Hsu , Liang-Yuh Chen , Ratson Morad , Daniel A. Carl , Sasson Somekh
IPC分类号： B24B37/00 , B24B37/04 , C25D5/00 , C25D5/22 , C25D7/12 , H01L21/288 , H01L21/304 , H01L21/321 , H01L21/768 , C25D1/00 , C25D17/00
CPC分类号： C25D7/123 , C25D5/06 , C25D5/22 , C25D17/001 , C25D17/008 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a fist distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.
摘要翻译：提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。在另一方面，提供了一种方法，其中将基板定位在其中具有电解质的部分封闭件中，其中离开可渗透盘的第一距离。任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。接下来，将基板定位成更靠近可渗透盘，并且在基板上沉积第二厚度。在沉积期间，部分封闭物和基底相对彼此旋转。

6. 发明授权

US06561884B1 Web lift system for chemical mechanical planarization 失效
标题翻译：用于化学机械平面化的Web提升系统
公开(公告)号：US06561884B1
公开(公告)日：2003-05-13
申请号：US09651657
申请日：2000-08-29
申请人： John M. White , Phillip R. Sommer , Sasson Somekh
发明人： John M. White , Phillip R. Sommer , Sasson Somekh
IPC分类号： B24B700
CPC分类号： B24B37/16 , B24B21/004 , B24B21/008 , B24B21/20
摘要： Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.
摘要翻译：通常，提供了用于提升抛光材料的网的方法和系统。在一个实施例中，系统包括具有邻近第一侧设置的第一提升构件和邻近第二侧设置的第二提升构件的压板。压板适于支撑布置在第一和第二升降构件之间的抛光介质的腹板。一种方法包括在第一提升构件和第二提升构件之间的台板上支撑抛光介质的腹板，并且将至少第一提升构件或第二提升构件移动到相对于台板的延伸位置，与压板分开关系。

7. 发明授权

US06379231B1 Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet 有权
标题翻译：用可推进的抛光片进行化学机械抛光的装置和方法
公开(公告)号：US06379231B1
公开(公告)日：2002-04-30
申请号：US09597957
申请日：2000-06-20
申请人： Manoocher Birang , Lawrence M. Rosenberg , Sasson Somekh , John M. White
发明人： Manoocher Birang , Lawrence M. Rosenberg , Sasson Somekh , John M. White
IPC分类号： B24B2100
CPC分类号： B24D7/12 , B24B21/04 , B24B27/0023 , B24B37/04 , H01L21/30625
摘要： A chemical mechanical polishing apparatus has a rotatable platen, a generally linear polishing sheet having an exposed portion extending over a top surface of the platen for polishing the substrate, and a drive mechanism to incrementally advance the polishing sheet in a linear direction across a top surface of the platen. The polishing sheet is releasably secured to the platen to rotate with the platen, and it has a width greater than a diameter of the substrate.
摘要翻译：一种化学机械抛光装置具有可旋转的压板，大体上线性的抛光片具有在压板的顶表面上延伸以用于抛光衬底的暴露部分;以及驱动机构，用于沿着线性方向跨越顶表面递增地推进抛光片的压板。抛光片可释放地固定到压板上以与压板一起旋转，并且其宽度大于衬底的直径。

8. 发明授权

US06291334B1 Etch stop layer for dual damascene process 失效
标题翻译：用于双镶嵌工艺的蚀刻停止层
公开(公告)号：US06291334B1
公开(公告)日：2001-09-18
申请号：US08995029
申请日：1997-12-19
申请人： Sasson Somekh
发明人： Sasson Somekh
IPC分类号： H01L21708
CPC分类号： H01L21/76835 , H01L21/7681 , H01L21/76829
摘要： The present invention provides a carbon based etch stop, such as a diamond like amorphous carbon, having a low dielectric constant and a method of forming a dual damascene structure. The low k etch stop is preferably deposited between two dielectric layers and patterned to define the underlying interlevel contacts/vias. The second or upper dielectric layer is formed over the etch stop and patterned to define the intralevel interconnects. The entire dual damascene structure is then etched in a single selective etch process which first etches the patterned interconnects, then etches the contact/vias past the patterned etch stop. The etch stop has a low dielectric constant relative to a conventional SiN etch stop, which minimizes the capacitive coupling between adjacent interconnect lines. The dual damascene structure is then filled with a suitable conductive material such as aluminum or copper and planarized using chemical mechanical polishing.
摘要翻译：本发明提供具有低介电常数的碳基蚀刻停止物，例如类金刚石无定形碳，以及形成双镶嵌结构的方法。低k蚀刻停止件优选沉积在两个电介质层之间并被图案化以限定下面的层间接触/通路。第二或上电介质层形成在蚀刻停止点上并被图案化以限定内部互连。然后在单个选择性蚀刻工艺中蚀刻整个双镶嵌结构，其首先蚀刻图案化的互连，然后蚀刻通过图案化蚀刻停止点的接触/通孔。蚀刻停止件相对于传统的SiN蚀刻停止层具有低的介电常数，其使相邻互连线之间的电容耦合最小化。然后用合适的导电材料如铝或铜填充双镶嵌结构，并使用化学机械抛光进行平面化。

9. 发明授权

US06244935B1 Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet 有权
标题翻译：用可推进的抛光片进行化学机械抛光的装置和方法
公开(公告)号：US06244935B1
公开(公告)日：2001-06-12
申请号：US09244456
申请日：1999-02-04
申请人： Manoocher Birang , Lawrence M. Rosenberg , Sasson Somekh , John M White
发明人： Manoocher Birang , Lawrence M. Rosenberg , Sasson Somekh , John M White
IPC分类号： B24B100
CPC分类号： B24D7/12 , B24B21/04 , B24B27/0023 , B24B37/04 , H01L21/30625
摘要： A chemical mechanical polishing apparatus has a rotatable platen, a generally linear polishing sheet having an exposed portion extending over a top surface of the platen for polishing the substrate, and a drive mechanism to incrementally advance the polishing sheet in a linear direction across a top surface of the platen. The polishing sheet is releasably secured to the platen to rotate with the platen, and it has a width greater than a diameter of the substrate.
摘要翻译：一种化学机械抛光装置具有可旋转的压板，大体上线性的抛光片具有在压板的顶表面上延伸以用于抛光衬底的暴露部分;以及驱动机构，用于沿着线性方向跨越顶表面递增地推进抛光片的压板。抛光片可释放地固定到压板上以与压板一起旋转，并且其宽度大于衬底的直径。

10. 发明授权

US5215619A Magnetic field-enhanced plasma etch reactor 失效
标题翻译：磁场增强等离子体蚀刻反应器
公开(公告)号：US5215619A
公开(公告)日：1993-06-01
申请号：US760848
申请日：1991-09-17
申请人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
发明人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译：公开了一种磁场增强型单晶片等离子体蚀刻反应器。反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。提升销和夹紧环通过单轴提升机构垂直移动，以从协作的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

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