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1. 发明授权

US5215619A Magnetic field-enhanced plasma etch reactor 失效
标题翻译：磁场增强等离子体蚀刻反应器
公开(公告)号：US5215619A
公开(公告)日：1993-06-01
申请号：US760848
申请日：1991-09-17
申请人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
发明人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译：公开了一种磁场增强型单晶片等离子体蚀刻反应器。反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。提升销和夹紧环通过单轴提升机构垂直移动，以从协作的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

2. 发明授权

US4842683A Magnetic field-enhanced plasma etch reactor 失效
标题翻译：磁场增强等离子体蚀刻反应器
公开(公告)号：US4842683A
公开(公告)日：1989-06-27
申请号：US185215
申请日：1988-04-25
申请人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
发明人： David Cheng , Dan Maydan , Sasson Somekh , Kenneth R. Stalder , Dana L. Andrews , Mei Chang , John M. White , Jerry Y. K. Wong , Vladimir J. Zeitlin , David N. Wang
IPC分类号： H05H1/46 , B01J3/02 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32431 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译：公开了一种磁场增强型单晶片等离子体蚀刻反应器。反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。提升销和夹紧环通过单轴提升机构垂直移动，以从配合的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

3. 发明授权

US5292393A Multichamber integrated process system 失效
标题翻译：多室综合过程系统
公开(公告)号：US5292393A
公开(公告)日：1994-03-08
申请号：US808786
申请日：1991-12-16
申请人： Dan Maydan , Sasson Somekh , David N. Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
发明人： Dan Maydan , Sasson Somekh , David N. Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
IPC分类号： H01L21/00 , C23C16/00 , B65G1/06
CPC分类号： H01L21/67167 , H01L21/67201
摘要： An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load lock chamber. A robot is mounted within the load lock and utilizes a concentric shaft drive system connected to an end effector via a dual four-bar link mechanism for imparting selected R-.theta. movement to the blade to load and unload wafers at the external elevator, internal elevator and individual process chambers. The system is uniquely adapted for enabling various types of IC processing including etch, deposition, sputtering and rapid thermal annealing chambers, thereby providing the opportunity for multiple step, sequential processing using different processes.
摘要翻译：公开了一种集成的模块化多室真空处理系统。该系统包括一个加载锁定，可以包括一个外部盒式电梯和一个内部装载锁定晶片升降机，并且还包括围绕负载锁的周边的站，用于将一个，两个或几个真空处理室连接到负载锁定室。机器人被安装在装载锁中，并且利用通过双重四杆连杆机构连接到端部执行器的同心轴驱动系统，用于将选定的R（θ）运动传递到叶片以在外部升降机上加载和卸载晶片，内部电梯和各个处理室。该系统独特地适用于实现各种类型的IC处理，包括蚀刻，沉积，溅射和快速热退火室，从而为使用不同工艺的多步骤顺序处理提供了机会。

4. 发明授权

US4951601A Multi-chamber integrated process system 失效
标题翻译：多室综合处理系统
公开(公告)号：US4951601A
公开(公告)日：1990-08-28
申请号：US371700
申请日：1989-06-23
申请人： Dan Maydan , Sasson Somekh , David N. Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
发明人： Dan Maydan , Sasson Somekh , David N. Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/67167 , H01L21/67184 , H01L21/67201 , H01L21/67742 , Y10S414/135 , Y10S414/137 , Y10S414/139
摘要： An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load lock chamber. A robot is mounted within the load lock and utilizes a concentric shaft drive system connected to an end effector via a dual four-bar link mechanism for imparting selected R-.theta. movement to the blade to load and unload wafers at the external elevator, internal elevator and individual process chambers. The system is uniquely adapted for enabling various types of IC processing including etch, deposition, sputtering and rapid thermal annealing chambers, thereby providing the opportunity for multiple step, sequential processing using different processes.
摘要翻译：公开了一种集成的模块化多室真空处理系统。该系统包括一个加载锁定，可以包括一个外部盒式电梯和一个内部装载锁定晶片升降机，并且还包括围绕负载锁的周边的站，用于将一个，两个或几个真空处理室连接到负载锁定室。机器人安装在装载锁中，并且利用同轴驱动系统，该系统通过双四杆连杆机构连接到末端执行器，用于将选定的Rθ运动传递给叶片，以在外部升降机，内部升降机和各个处理室。该系统独特地适用于实现各种类型的IC处理，包括蚀刻，沉积，溅射和快速热退火室，从而为使用不同工艺的多步骤顺序处理提供了机会。

5. 发明授权

US4668365A Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition 失效
标题翻译：磁控管增强等离子体辅助化学气相沉积的装置和方法
公开(公告)号：US4668365A
公开(公告)日：1987-05-26
申请号：US664657
申请日：1984-10-25
申请人： Robert Foster , David N. Wang , Sasson Somekh , Dan Maydan
发明人： Robert Foster , David N. Wang , Sasson Somekh , Dan Maydan
IPC分类号： C23C16/50 , C23C16/04 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/31 , C23C14/00
CPC分类号： H01J37/32623 , C23C16/045 , C23C16/4558 , C23C16/509 , C23C16/517 , H01J37/3266 , H01J37/32935 , H01J2237/3327
摘要： A plasma CVD reactor and associated process use magnetic field enhancement to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films. The reacter and process are designed for automated, high-throughout, in-line small dimension VLSI integrated circuit fabrication, and are applicable to multistep in-situ processing.
摘要翻译：等离子体CVD反应器和相关工艺使用磁场增强来提供高质量，非常高的沉积速率的金属，电介质和保形半导体膜。该设计和工艺设计用于自动化，高整体，在线小尺寸VLSI集成电路制造，并适用于多步原位处理。

6. 发明授权

US4668338A Magnetron-enhanced plasma etching process 失效
标题翻译：磁控增强等离子体蚀刻工艺
公开(公告)号：US4668338A
公开(公告)日：1987-05-26
申请号：US814638
申请日：1985-12-30
申请人： Dan Maydan , Sasson Somekh , Mei Cheng , David Cheng
发明人： Dan Maydan , Sasson Somekh , Mei Cheng , David Cheng
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01J37/32623 , H01J37/3266 , H01L21/31116 , H01L21/32137 , H01J2237/3341
摘要： A magnetically-enhanced, variable magnetic field, RIE mode plasma etch process for etching materials such as dielectrics and polycrystalline, is disclosed. The variable magnetic field permits optimization of selected characteristics such as etch rate, etch selectivity, ion bombardment and radiation damage, etch uniformity, and etch anisotropy.
摘要翻译：公开了用于蚀刻诸如电介质和多晶的材料的磁增强型可变磁场RIE模式等离子体蚀刻工艺。可变磁场允许优化所选择的特性，例如蚀刻速率，蚀刻选择性，离子轰击和辐射损伤，蚀刻均匀性和蚀刻各向异性。

7. 发明授权

US5882165A Multiple chamber integrated process system 失效
标题翻译：多室综合处理系统
公开(公告)号：US5882165A
公开(公告)日：1999-03-16
申请号：US926568
申请日：1997-09-10
申请人： Dan Maydan , Sasson Somekh , David Nin-Kou Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
发明人： Dan Maydan , Sasson Somekh , David Nin-Kou Wang , David Cheng , Masato Toshima , Isaac Harari , Peter D. Hoppe
IPC分类号： H01L21/00 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67161 , H01L21/67184 , H01L21/67201 , H01L21/67742 , H01L21/67745 , H01L21/67748
摘要： An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load lock chamber. A robot is mounted within the load lock and utilizes a concentric shaft drive system connected to an end effector via a dual four-bar link mechanism for imparting selected R--.THETA. movement to the blade to load and unload wafers at the external elevator, internal elevator and individual process chambers. The system is uniquely adapted for enabling various types of IC processing including etch, deposition, sputtering and rapid thermal annealing chambers, thereby providing the opportunity for multiple step, sequential processing using different processes.
摘要翻译：公开了一种集成的模块化多室真空处理系统。该系统包括一个加载锁定，可以包括一个外部盒式电梯和一个内部装载锁定晶片升降机，并且还包括围绕负载锁的周边的站，用于将一个，两个或几个真空处理室连接到负载锁定室。机器人被安装在装载锁中，并利用同轴的驱动系统，该系统通过双重四杆连杆机构连接到末端执行器，用于将选定的R-THETA运动传递给叶片，以在外部升降机，内部升降机和各个处理室。该系统独特地适用于实现各种类型的IC处理，包括蚀刻，沉积，溅射和快速热退火室，从而为使用不同工艺的多步骤顺序处理提供了机会。

8. 发明授权

US5186718A Staged-vacuum wafer processing system and method 失效
标题翻译：分级真空晶圆加工系统及方法
公开(公告)号：US5186718A
公开(公告)日：1993-02-16
申请号：US685976
申请日：1991-04-15
申请人： Avi Tepman , Howard Grunes , Sasson Somekh , Dan Maydan
发明人： Avi Tepman , Howard Grunes , Sasson Somekh , Dan Maydan
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/67167 , H01L21/67184 , H01L21/67742 , Y10S148/006 , Y10S148/169 , Y10T29/41 , Y10T29/413
摘要： A processing system for workpieces such as semiconductor wafers is disclosed which incorporates multiple, isolated vacuum stages between the cassette load lock station and the main vacuum processing chambers. A vacuum gradient is applied between the cassette load lock and the main processing chambers to facilitate the use of a very high degree of vacuum in the processing chambers without lengthy pump down times. Separate robot chambers are associated with the vacuum processing chambers and the load lock(s). In addition, separate transport paths are provided between the two robot chambers to facilitate loading and unloading of workpieces. Pre-treatment and post-treatment chambers may be incorporated in the two transport paths.
摘要翻译：公开了一种用于诸如半导体晶片的工件的处理系统，其在盒加载锁定站和主真空处理室之间并入多个隔离的真空级。在盒式加载锁和主处理室之间施加真空梯度，以便在处理室中使用非常高的真空度，而不需要冗长的抽空时间。分离的机器人腔室与真空处理室和负载锁相关联。另外，在两个机器人室之间提供单独的输送路径，以便于加工和卸载工件。预处理和后处理室可以并入两个运输路径中。

9. 发明授权

US5855681A Ultra high throughput wafer vacuum processing system 失效
标题翻译：超高产量晶圆真空处理系统
公开(公告)号：US5855681A
公开(公告)日：1999-01-05
申请号：US751485
申请日：1996-11-18
申请人： Dan Maydan , Sasson Somekh , Ashok Sinha , Kevin Fairbairn , Christopher Lane , Kelly Colborne , Hari K. Ponnekanti , W. N.(Nick) Taylor
发明人： Dan Maydan , Sasson Somekh , Ashok Sinha , Kevin Fairbairn , Christopher Lane , Kelly Colborne , Hari K. Ponnekanti , W. N.(Nick) Taylor
IPC分类号： H01L21/00 , H01L21/205 , H01L21/677 , H01L21/687 , C23C16/00 , C23F1/02
CPC分类号： H01L21/67167 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67742 , H01L21/68707 , H01L21/68785
摘要： The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region. The processing chambers are configured to allow multiple, isolated processes to be performed concurrently in at least two processing regions so that at least two wafers can be processed simultaneously in a chamber with a high degree of process control provided by shared gas sources, shared exhaust systems, separate gas distribution assemblies, separate RF power sources, and separate temperature control systems.
摘要翻译：本发明通常提供一种盒式到盒式真空处理系统，其同时处理多个晶片，并且结合了单晶片处理室和多个晶片处理的优点，用于高质量晶片处理，高晶圆吞吐量和减小的占地面积。根据本发明的一个方面，该系统优选地是分级真空系统，其通常包括用于将晶片引入系统中并且还提供后续处理的晶片冷却的负载锁定室，用于容纳晶片处理器的传送室，以及一个或更多的处理室具有可彼此隔离的两个或更多个处理区域，并且优选地共享公共气体供应源和公共排气泵。处理区域还优选地包括单独的气体分配组件和RF功率源，以在每个处理区域中在晶片表面上提供均匀的等离子体密度。处理室被配置为允许在至少两个处理区域中同时执行多个隔离过程，使得可以在室内同时处理至少两个晶片，具有由共用气源提供的高程度的过程控制，共用排气系统，独立的气体分配组件，独立的射频电源和独立的温度控制系统。

10. 发明授权

US5294320A Apparatus for cleaning a shield in a physical vapor deposition chamber 失效
标题翻译：用于清洁物理气相沉积室中的屏蔽的装置
公开(公告)号：US5294320A
公开(公告)日：1994-03-15
申请号：US878938
申请日：1992-05-05
申请人： Sasson Somekh , Dan Maydan
发明人： Sasson Somekh , Dan Maydan
IPC分类号： C23C14/22 , C23C14/56 , C23C14/34
CPC分类号： H01J37/32862 , C23C14/22 , C23C14/564
摘要： In a method for in situ cleaning a shield bearing of excess target material deposited in a physical vapor deposition chamber, during a cleaning cycle, a vacuum is created in the physical vapor deposition chamber. A gas mixture which includes a reactive gas is introduced into the physical vapor deposition chamber. The reactive gas is activated by plasma discharge. During the cleaning, the gas mixture is continuously removed from the vapor deposition chamber along with reaction products.
摘要翻译：在用于原位清洁沉积在物理气相沉积室中的过量目标材料的屏蔽轴承的方法中，在清洁循环期间，在物理气相沉积室中产生真空。将包括反应气体的气体混合物引入物理气相沉积室。反应气体通过等离子体放电激活。在清洁过程中，气体混合物与反应产物一起从气相沉积室中连续除去。

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