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1. 发明授权

US07224456B1 In-situ defect monitor and control system for immersion medium in immersion lithography 有权
标题翻译：浸没式光刻浸渍介质的原位缺陷监测和控制系统
公开(公告)号：US07224456B1
公开(公告)日：2007-05-29
申请号：US10858759
申请日：2004-06-02
申请人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01N15/02
CPC分类号： G01N21/47 , G01N2015/0011 , G03F7/70341
摘要： A system and method for detecting bubbles in a lithographic immersion medium and for controlling a lithographic process based at least in part on the detection of bubbles is provided. A bubble monitoring component emits an incident beam that passes through the immersion medium and is incident upon a substrate to produce a reflected and/or diffracted beam(s). The reflected and/or diffracted beam(s) is received by one or more optical detectors. The presence or absence of bubbles can be derived from information extracted by scatterometry from the reflected and/or diffracted beams. A process control component interacts with a positioning component and an optical exposure component to alter a lithographic process based at least in part on the results of the scatterometry.
摘要翻译：提供了一种用于在光刻浸渍介质中检测气泡并且至少部分地基于气泡检测来控制光刻工艺的系统和方法。气泡监测部件发射穿过浸没介质并入射到基板上以产生反射和/或衍射光束的入射光束。反射和/或衍射光束被一个或多个光学检测器接收。可以通过从反射和/或衍射光束散射法提取的信息导出气泡的存在或不存在。过程控制部件与定位部件和光学曝光部件相互作用，以至少部分地基于散射测量的结果来改变光刻工艺。

2. 发明授权

US06999254B1 Refractive index system monitor and control for immersion lithography 有权
$Refractive index system monitor and control for immersion lithography$
标题翻译：折射率系统监测和控制浸没光刻
公开(公告)号：US06999254B1
公开(公告)日：2006-02-14
申请号：US10967845
申请日：2004-10-18
申请人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G02B7/00
CPC分类号： G03F7/70341
摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。已知的光栅结构被构建在衬底上。折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

3. 发明授权

US06809793B1 System and method to monitor reticle heating 有权
标题翻译：监控标线加热的系统和方法
公开(公告)号：US06809793B1
公开(公告)日：2004-10-26
申请号：US10050456
申请日：2002-01-16
申请人： Khoi A. Phan , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
发明人： Khoi A. Phan , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
IPC分类号： G03B2752
CPC分类号： G03F7/70558 , G03F7/70875
摘要： A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.
摘要翻译：公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。

4. 发明授权

US06771374B1 Scatterometry based measurements of a rotating substrate 有权
标题翻译：旋转基板的基于散射法的测量
公开(公告)号：US06771374B1
公开(公告)日：2004-08-03
申请号：US10050758
申请日：2002-01-16
申请人： Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Ramkumar Subramanian
发明人： Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Ramkumar Subramanian
IPC分类号： G01N2155
CPC分类号： G01N21/211 , G01B11/0675 , G01N21/4738 , G01N21/9501 , Y10T428/21
摘要： A system and method are disclosed for monitoring characteristics of a rotating substrate. As the substrate rotates in an environment, an incident light beam is emitted onto the substrate near an axis about which the substrate rotates. The emission of the incident beam is controlled as a function of the angular orientation of the substrate, so that the incident beam selectively interrogates a central region of the substrate to facilitate measuring and/or inspecting characteristics of the substrate.
摘要翻译：公开了一种用于监测旋转衬底的特性的系统和方法。当衬底在环境中旋转时，入射光束在衬底旋转的轴附近被发射到衬底上。入射光束的发射被控制为衬底的角度取向的函数，使得入射光束选择性地询问衬底的中心区域以便于测量和/或检查衬底的特性。

5. 发明授权

US06562185B2 Wafer based temperature sensors for characterizing chemical mechanical polishing processes 有权
标题翻译：用于表征化学机械抛光工艺的基于晶圆的温度传感器
公开(公告)号：US06562185B2
公开(公告)日：2003-05-13
申请号：US09955552
申请日：2001-09-18
申请人： Steven C. Avanzino , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Steven C. Avanzino , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： B24B3700
CPC分类号： B24B37/015
摘要： A system for characterizing a chemical mechanical polishing process is provided. The system includes a wafer that has a metal, polysilicon, and/or dielectric layer and/or substrate and a temperature sensor located in and/or on the metal, polysilicon and/or dielectric layer and/or substrate. The system also includes a temperature monitoring system that can read the wafer temperature from the temperature sensors and that can analyze the wafer temperature to characterize the chemical mechanical polishing process. Such characterization includes producing information concerning relationships between wafer temperature and polishing rate, polishing uniformity and introduction of defects during polishing. Such relationships are correlated with wafer temperature as related to parameters like polishing time, pressure, speed, slurry properties and wafer/metal layer properties. Such characterization can be employed, for example, to better understand a CMP process, to facilitate initializing subsequent chemical mechanical polishing processes and/or apparatus and/or to control such chemical mechanical polishing processes and/or apparatus by monitoring and/or controlling wafer temperature.
摘要翻译：提供了表征化学机械抛光工艺的系统。该系统包括具有位于金属，多晶硅和/或电介质层和/或衬底中和/或上的金属，多晶硅和/或电介质层和/或衬底和温度传感器的晶片。该系统还包括一个温度监控系统，可以从温度传感器读取晶圆温度，并且可以分析晶圆温度以表征化学机械抛光过程。这种表征包括产生关于晶片温度和抛光速率之间的关系的信息，抛光均匀性和在抛光期间引入缺陷。这些关系与晶片温度相关，如与抛光时间，压力，速度，浆料性质和晶片/金属层性质等参数相关。可以采用这种表征，例如，更好地理解CMP工艺，以便于初始化随后的化学机械抛光工艺和/或设备和/或通过监测和/或控制晶片温度来控制这种化学机械抛光工艺和/或设备。

6. 发明授权

US06507474B1 Using localized ionizer to reduce electrostatic charge from wafer and mask 有权
标题翻译：使用局部电离器来减少晶片和掩模的静电电荷
公开(公告)号：US06507474B1
公开(公告)日：2003-01-14
申请号：US09597126
申请日：2000-06-19
申请人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bryan K. Choo , Bharath Rangarajan
发明人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bryan K. Choo , Bharath Rangarajan
IPC分类号： H01T2300
CPC分类号： G03F7/70616 , G03F7/70941
摘要： One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.
摘要翻译：本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法，包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器，离子发生器产生离子，从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统，其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器，其上具有静电电荷，用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器，耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜，用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。

7. 发明授权

US06482558B1 Conducting electron beam resist thin film layer for patterning of mask plates 失效
标题翻译：用于掩模板图形化的导电电子束抗蚀剂薄膜层
公开(公告)号：US06482558B1
公开(公告)日：2002-11-19
申请号：US09782382
申请日：2001-02-12
申请人： Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
发明人： Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
IPC分类号： G03F900
CPC分类号： G03F7/093 , G03F1/40 , G03F1/50 , Y10S430/143
摘要： One aspect of the present invention relates to a system for dissipating electrostatic charge on a mask plate structure containing the mask plate structure containing a substrate, a chromium layer over the substrate, and a conductive polymer over the chromium layer; a conductive structure coupled to the mask plate structure which allows accumulated electrostatic charge to flow from the mask plate structure; a conductive path between the conductive structure and a ground, wherein the conductive path inacludes a switch controlled by a controller; and a detector coupled to the controller for signaling the controller when the accumulation of electrostatic charge is detected. Another aspect of the present invention relates to a method for dissipating charge accumulation during patterning of mask plates using a conductive polymer layer involving the steps of providing a mask substrate having a chromium layer; depositing a conductive polymer layer over the chromium layer; connecting a conductive structure to the mask substrate; irradiating portions of the mask substrate with an electron beam; detecting whether electrostatic charge exists on the mask substrate; and if electrostatic charge is detected, closing a circuit whereby the conductive structure is grounded to permit a flow of electrostatic charge from the mask substrate to the ground.
摘要翻译：本发明的一个方面涉及一种用于在掩模板结构上耗散静电电荷的系统，该系统包含含有衬底的掩模板结构，在衬底上的铬层和在铬层上的导电聚合物; 耦合到掩模板结构的导电结构，其允许积聚的静电电荷从掩模板结构流动; 导电结构和地之间的导电路径，其中导电路径不允许由控制器控制的开关; 以及耦合到控制器的检测器，用于在检测到静电电荷的累积时用于发信号通知控制器。本发明的另一方面涉及一种使用导电聚合物层在掩模板图案化期间耗散电荷累积的方法，包括以下步骤：提供具有铬层的掩模基板; 在所述铬层上沉积导电聚合物层; 将导电结构连接到所述掩模基板; 用电子束照射掩模基板的部分; 检测在掩模基板上是否存在静电电荷; 并且如果检测到静电电荷，则关闭电路，由此导电结构接地以允许静电电荷从掩模基板流到地面。

8. 发明授权

US06444373B1 Modification of mask layout data to improve mask fidelity 有权
标题翻译：修改掩模布局数据以提高掩码保真度
公开(公告)号：US06444373B1
公开(公告)日：2002-09-03
申请号：US09596954
申请日：2000-06-16
申请人： Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan
发明人： Ramkumar Subramanian , Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan
IPC分类号： G03F900
CPC分类号： G03F1/70 , G03F7/70433 , G03F7/70441
摘要： The present invention relates to a system and method of modifying mask layout data to improve the fidelity of mask manufacture. The system and method include determining the difference between the mask layout design and the mask features as written, and generating sizing corrections. The sizing corrections can be used to modify the mask layout data, and/or stored in a database.
摘要翻译：本发明涉及一种修改掩模布局数据以提高掩模制造的保真度的系统和方法。该系统和方法包括确定掩模布局设计和掩模特征之间的写入差异，并产生尺寸校正。尺寸校正可用于修改掩模布局数据和/或存储在数据库中。

9. 发明授权

US06423479B1 Cleaning carbon contamination on mask using gaseous phase 失效
标题翻译：使用气相清洁面罩上的碳污染
公开(公告)号：US06423479B1
公开(公告)日：2002-07-23
申请号：US09495165
申请日：2000-01-31
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： G03F726
CPC分类号： G03F1/82
摘要： In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithography mask contains carbon contaminants; and contacting the lithography mask with sulfur trioxide thereby reducing the carbon contaminants thereon.
摘要翻译：在一个实施例中，本发明涉及一种处理光刻掩模的方法，包括以下步骤：将具有光化辐射的光刻基底通过室中的光刻掩模曝光; 从所述腔室去除所述光刻掩模，其中所述光刻掩模含有碳污染物; 并使光刻掩模与三氧化硫接触，从而减少其上的碳污染物。

10. 发明授权

US06371134B1 Ozone cleaning of wafers 有权
公开(公告)号：US06371134B1
公开(公告)日：2002-04-16
申请号：US09495014
申请日：2000-01-31
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
IPC分类号： B08B700
摘要： In one embodiment, the present invention relates to a method of processing a semiconductor structure, involving the steps of providing the semiconductor structure having a patterned resist thereon; stripping the patterned resist from the semiconductor structure, wherein an amount of carbon containing resist debris remain on the semiconductor structure; and contacting the semiconductor structure with ozone thereby reducing the amount of carbon containing resist debris thereon.

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