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1. 发明授权

US5712698A Independently controllable shutters and variable area apertures for off axis illumination 失效
标题翻译：独立可控的百叶窗和用于离轴照明的可变面积孔
公开(公告)号：US5712698A
公开(公告)日：1998-01-27
申请号：US610770
申请日：1996-03-04
申请人： Bernhard Poschenrieder , Takashi Sato , Tsukasa Azuma
发明人： Bernhard Poschenrieder , Takashi Sato , Tsukasa Azuma
IPC分类号： G03F7/20 , H01L21/027 , G03B27/72
CPC分类号： G03F7/70091 , G03F7/701
摘要： New types of apertures to vary the size and shape of the aperture area without the need to change the whole aperture plate in off axis lithography. The off axis illumination apertures allow the size and shape of apertures to be changed without having to change the aperture plates for each step in the lithographic process. The aperture plate is fitted with simple shutter mechanisms that allow the ready adjustment of the aperture openings.
摘要翻译：新型的孔径，以改变开口面积的大小和形状，而不需要在离轴光刻中改变整个孔板。离轴照明孔允许改变孔的尺寸和形状，而不必改变光刻工艺中每个步骤的孔板。孔板配有简单的快门机构，允许准备调整孔径开口。

2. 发明授权

US5815247A Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures 失效
标题翻译：通过使用偶极和偏光孔的离轴照明来避免图案缩短
公开(公告)号：US5815247A
公开(公告)日：1998-09-29
申请号：US531767
申请日：1995-09-21
申请人： Bernhard Poschenrieder , Takashi Sato , Tsukasa Azuma
发明人： Bernhard Poschenrieder , Takashi Sato , Tsukasa Azuma
IPC分类号： G03F7/20 , H01L21/027 , G03B27/42 , G03B27/54 , G03B27/72
CPC分类号： G03F7/70558 , G03F7/2022 , G03F7/701 , G03F7/70566
摘要： A system and method of avoiding pattern shortening without resorting to generating a mask with a bias solve the direction dependent differences in exposure behavior in photolithography processes in the manufacture of semiconductor devices. Instead of designing a biased mask to solve the exposure problem, the pattern shortening effect is avoided by influencing the exposure process itself. By using an off axis illumination technique, the exposure is separated into different directions. In one embodiment, off axis illumination is applied in combination with special dipole apertures (i.e., two openings). The exposure is done in two or more parts, whereby the aperture is twisted between exposures. In another embodiment, off axis illumination is used in combination with special polarizer apertures. As with the first embodiment, the exposure is done in two or more parts, but in this case with differently polarized light.
摘要翻译：避免图案缩短的系统和方法，而不用借助于产生具有偏置的掩模来解决半导体器件的制造中光刻工艺中的曝光行为的方向相关差异。不是设计偏置掩模来解决曝光问题，而是通过影响曝光过程本身来避免图案缩短效果。通过使用离轴照明技术，将曝光分离成不同的方向。在一个实施例中，离轴照明与特殊偶极子孔（即两个开口）组合施加。曝光是在两个或更多部分进行的，由此孔径在曝光之间扭转。在另一个实施例中，离轴照明与特殊的偏振器孔组合使用。与第一实施例一样，曝光在两个或更多个部分中进行，但是在这种情况下以不同的偏振光进行曝光。

3. 发明授权

US06294026B1 Distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops 失效
标题翻译：具有多个气体入口和单独的质量流量控制回路的反应室的分配板
公开(公告)号：US06294026B1
公开(公告)日：2001-09-25
申请号：US08756670
申请日：1996-11-26
申请人： Klaus Roithner , Bernhard Poschenrieder , Karl Paul Muller
发明人： Klaus Roithner , Bernhard Poschenrieder , Karl Paul Muller
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45561
摘要： The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.
摘要翻译：本发明是一种用于在反应室内安装反应物气体的装置。该装置能够用于气相沉积和蚀刻工艺。该设备基本上补偿了由气体耗尽引起的晶片边缘处气相沉积和蚀刻不均匀的问题。具有延伸穿过其中的多个孔的气体分配板附接到反应室的内表面。至少一个真空密封隔板设置在气体分配板的表面和室的内表面之间。隔板将板和反应室之间的空间分隔成气体分配区。气体入口连接到每个气体分配区。每个气体入口管线具有至少一个质量流量控制器，其调节到每个气体分配区域的气体流量。质量流量控制器用于确保化学气相沉积或蚀刻跨基板表面的均匀速率。

4. 发明授权

US5893735A Three-dimensional device layout with sub-groundrule features 失效
标题翻译：具有子基础特征的三维设备布局
公开(公告)号：US5893735A
公开(公告)日：1999-04-13
申请号：US742533
申请日：1996-11-01
申请人： Reinhard J. Stengl , Erwin Hammerl , Jack A. Mandelman , Herbert L. Ho , Radhika Srinivasan , Alvin P. Short , Bernhard Poschenrieder
发明人： Reinhard J. Stengl , Erwin Hammerl , Jack A. Mandelman , Herbert L. Ho , Radhika Srinivasan , Alvin P. Short , Bernhard Poschenrieder
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L27/10861 , H01L27/10832
摘要： Method for forming three-dimensional device structures comprising a second device having sub-groundrule features formed over a first device is disclosed. A layer having a single crystalline top surface is formed above the first device to provide the base for forming the active area of the second device. the sub-groundrule feature is formed using mandrel and spacers.
摘要翻译：公开了一种用于形成三维器件结构的方法，其包括在第一器件上形成的具有次基底特征的第二器件。在第一装置上方形成具有单一晶体顶表面的层，以提供用于形成第二装置的有效区域的基座。使用心轴和间隔件形成子底座特征。

5. 发明授权

US5776808A Pad stack with a poly SI etch stop for TEOS mask removal with RIE 失效
标题翻译：具有多晶硅SI蚀刻停止功能的衬垫叠层，用RIE去除TEOS掩模
公开(公告)号：US5776808A
公开(公告)日：1998-07-07
申请号：US777156
申请日：1996-12-26
申请人： Karl Paul Muller , Bernhard Poschenrieder , Klaus Roithner
发明人： Karl Paul Muller , Bernhard Poschenrieder , Klaus Roithner
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10861 , H01L21/31116
摘要： A method for allowing the removal of a TEOS etch mask layer utilizing an anisotropic technique such as reactive ion etching. The use of the anisotropic technique results in substantially less undercutting of the pad oxide layer than wet chemical etching techniques. One embodiment of the invention involves forming a polysilicon etch stop layer under the pad TEOS layer.
摘要翻译：使用诸如反应离子蚀刻的各向异性技术来允许去除TEOS蚀刻掩模层的方法。与湿化学蚀刻技术相比，使用各向异性技术导致焊盘氧化物层的底切性更少。本发明的一个实施例涉及在焊盘TEOS层下面形成多晶硅蚀刻停止层。

6. 发明授权

US5961723A Distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops 失效
公开(公告)号：US5961723A
公开(公告)日：1999-10-05
申请号：US756670
申请日：1996-11-26
申请人： Klaus Roithner , Bernhard Poschenrieder , Karl Paul Muller
发明人： Klaus Roithner , Bernhard Poschenrieder , Karl Paul Muller
摘要： The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.

7. 发明授权

US5792685A Three-dimensional device layout having a trench capacitor 失效
标题翻译：具有沟槽电容器的三维器件布局
公开(公告)号：US5792685A
公开(公告)日：1998-08-11
申请号：US667541
申请日：1996-06-21
申请人： Erwin Hammerl , Jack A. Mandelman , Bernhard Poschenrieder , Alvin P. Short , Radhika Srinivasan , Reinhard J. Stengl , Herbert L. Ho
发明人： Erwin Hammerl , Jack A. Mandelman , Bernhard Poschenrieder , Alvin P. Short , Radhika Srinivasan , Reinhard J. Stengl , Herbert L. Ho
IPC分类号： H01L27/00 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
CPC分类号： H01L27/10861 , H01L27/10832
摘要： Method for forming three-dimensional device structures comprising a second device formed over a first device is disclosed. A layer having a single crystalline top surface is formed above the first device to provide the base for forming the active area of the second device.
摘要翻译：公开了一种用于形成包括形成在第一装置上的第二装置的三维装置结构的方法。在第一装置上方形成具有单一晶体顶表面的层，以提供用于形成第二装置的有效区域的基座。

8. 发明授权

US5723381A Formation of self-aligned overlapping bitline contacts with sacrificial polysilicon fill-in stud 失效
标题翻译：用牺牲多晶硅填充螺柱形成自对准的重叠位线接触
公开(公告)号：US5723381A
公开(公告)日：1998-03-03
申请号：US534776
申请日：1995-09-27
申请人： Virinder Grewal , Bernhard Poschenrieder
发明人： Virinder Grewal , Bernhard Poschenrieder
IPC分类号： H01L21/768 , H01L21/28 , H01L21/306 , H01L21/336 , H01L21/8242 , H01L27/108 , H01L29/78 , H01L21/4763
CPC分类号： H01L21/28
摘要： A method of forming a self-aligned overlapping bitline contact, includes steps of first depositing a sacrificial polysilicon on a spacer dielectric film, and thereafter patterning the polysilicon. The polysilicon film is a sacrificial fill-in for a bitline contact stud. The method further includes depositing a middle-of-line (MOL) oxide on the polysilicon, and planarizing the MOL oxide by chemical-mechanical polishing (CMP). Thereafter, the polysilicon is etched and the spacer dielectric film is etched to form a self-aligned bitline contact.
摘要翻译：形成自对准重叠位线接触的方法包括以下步骤：首先在间隔电介质膜上沉积牺牲多晶硅，然后对多晶硅进行构图。多晶硅膜是位线接触柱的牺牲填充物。该方法还包括在多晶硅上沉积中间线（MOL），并通过化学机械抛光（CMP）平坦化MOL氧化物。此后，蚀刻多晶硅并蚀刻间隔绝缘膜以形成自对准的位线接触。

9. 发明授权

US5605600A Etch profile shaping through wafer temperature control 失效
标题翻译：蚀刻轮廓成型通过晶片温度控制
公开(公告)号：US5605600A
公开(公告)日：1997-02-25
申请号：US402378
申请日：1995-03-13
申请人： Karl P. Muller , Klaus B. Roithner , Bernhard Poschenrieder , Toru Watanabe
发明人： Karl P. Muller , Klaus B. Roithner , Bernhard Poschenrieder , Toru Watanabe
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/8242 , H01L27/108
CPC分类号： H01L21/3083 , H01L21/3065
摘要： In a method of etch profile shaping through wafer temperature control during an etch process wherein deposition of a passivation film is temperature dependent, a gap between a semiconductor wafer to be etched and a cathode is pressurized at a first pressure, and the pressure in the gap is changed to a second pressure at a predetermined time during the etch process, thereby altering heat transfer from the semiconductor wafer to the cathode. The temperature of the wafer is adjusted one or more times during an etching process to control profile shaping of deep trenches, contact holes and shapes for mask opening shaping during the etch process.
摘要翻译：在蚀刻过程中通过晶片温度控制的蚀刻轮廓整形的方法中，其中钝化膜的沉积是温度依赖性的，要蚀刻的半导体晶片与阴极之间的间隙在第一压力下被加压，并且间隙中的压力在蚀刻工艺期间在预定时间改变为第二压力，从而改变从半导体晶片到阴极的热传递。在蚀刻过程期间，晶片的温度调整一次或多次，以控制在蚀刻工艺期间用于掩模开口成形的深沟槽，接触孔和形状的轮廓成形。

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