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1. 发明授权

US5712698A Independently controllable shutters and variable area apertures for off axis illumination 失效
标题翻译：独立可控的百叶窗和用于离轴照明的可变面积孔
公开(公告)号：US5712698A
公开(公告)日：1998-01-27
申请号：US610770
申请日：1996-03-04
申请人： Bernhard Poschenrieder , Takashi Sato , Tsukasa Azuma
发明人： Bernhard Poschenrieder , Takashi Sato , Tsukasa Azuma
IPC分类号： G03F7/20 , H01L21/027 , G03B27/72
CPC分类号： G03F7/70091 , G03F7/701
摘要： New types of apertures to vary the size and shape of the aperture area without the need to change the whole aperture plate in off axis lithography. The off axis illumination apertures allow the size and shape of apertures to be changed without having to change the aperture plates for each step in the lithographic process. The aperture plate is fitted with simple shutter mechanisms that allow the ready adjustment of the aperture openings.
摘要翻译：新型的孔径，以改变开口面积的大小和形状，而不需要在离轴光刻中改变整个孔板。离轴照明孔允许改变孔的尺寸和形状，而不必改变光刻工艺中每个步骤的孔板。孔板配有简单的快门机构，允许准备调整孔径开口。

2. 发明授权

US5815247A Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures 失效
标题翻译：通过使用偶极和偏光孔的离轴照明来避免图案缩短
公开(公告)号：US5815247A
公开(公告)日：1998-09-29
申请号：US531767
申请日：1995-09-21
申请人： Bernhard Poschenrieder , Takashi Sato , Tsukasa Azuma
发明人： Bernhard Poschenrieder , Takashi Sato , Tsukasa Azuma
IPC分类号： G03F7/20 , H01L21/027 , G03B27/42 , G03B27/54 , G03B27/72
CPC分类号： G03F7/70558 , G03F7/2022 , G03F7/701 , G03F7/70566
摘要： A system and method of avoiding pattern shortening without resorting to generating a mask with a bias solve the direction dependent differences in exposure behavior in photolithography processes in the manufacture of semiconductor devices. Instead of designing a biased mask to solve the exposure problem, the pattern shortening effect is avoided by influencing the exposure process itself. By using an off axis illumination technique, the exposure is separated into different directions. In one embodiment, off axis illumination is applied in combination with special dipole apertures (i.e., two openings). The exposure is done in two or more parts, whereby the aperture is twisted between exposures. In another embodiment, off axis illumination is used in combination with special polarizer apertures. As with the first embodiment, the exposure is done in two or more parts, but in this case with differently polarized light.
摘要翻译：避免图案缩短的系统和方法，而不用借助于产生具有偏置的掩模来解决半导体器件的制造中光刻工艺中的曝光行为的方向相关差异。不是设计偏置掩模来解决曝光问题，而是通过影响曝光过程本身来避免图案缩短效果。通过使用离轴照明技术，将曝光分离成不同的方向。在一个实施例中，离轴照明与特殊偶极子孔（即两个开口）组合施加。曝光是在两个或更多部分进行的，由此孔径在曝光之间扭转。在另一个实施例中，离轴照明与特殊的偏振器孔组合使用。与第一实施例一样，曝光在两个或更多个部分中进行，但是在这种情况下以不同的偏振光进行曝光。

3. 发明申请

US20110059402A1 EXPOSURE METHOD 审中-公开
标题翻译：曝光方法
公开(公告)号：US20110059402A1
公开(公告)日：2011-03-10
申请号：US12857416
申请日：2010-08-16
申请人： Tsukasa Azuma , Takashi Sato
发明人： Tsukasa Azuma , Takashi Sato
IPC分类号： G03F7/004 , H01L21/027
CPC分类号： G03F7/2022
摘要： According to the embodiments, exposure is performed on a resist on a substrate at a first focus position by using a phase shift mask in which a first light transmitting area and a second light transmitting area are formed adjacently via a light shielding pattern and a phase difference between light transmitting through the first light transmitting area and light transmitting through the second light transmitting area is φ≠π, and exposure is performed on the resist at a second focus position different from the first focus position by using the phase shift mask.
摘要翻译：根据实施例，通过使用相移掩模对通过遮光图案相邻形成第一透光区域和第二透光区域的相位差掩模在第一聚焦位置对基板上的抗蚀剂进行曝光，在通过第一透光区域透射的光和透过第二透光区域的光之间通过使用相移掩模在与第一聚焦位置不同的第二焦点位置对抗蚀剂进行曝光。

4. 发明授权

US6051369A Lithography process using one or more anti-reflective coating films and fabrication process using the lithography process 失效
标题翻译：使用一种或多种抗反射涂膜的光刻工艺和使用光刻工艺的制造工艺
公开(公告)号：US6051369A
公开(公告)日：2000-04-18
申请号：US4390
申请日：1998-01-08
申请人： Tsukasa Azuma , Takashi Sato
发明人： Tsukasa Azuma , Takashi Sato
IPC分类号： G03F7/09 , H01L21/027 , H01L21/768 , G03F7/00
CPC分类号： H01L21/76808 , G03F7/091 , H01L21/0276
摘要： A lithography process includes a step of forming an antireflective coating film on a substrate. A film is formed on the antireflective film and a radiation sensitive film is formed on the film. The radiation sensitive film is selectively exposed. During the selective exposing, the antireflective film covers the lower surface of the portion of film on which the radiation sensitive film is formed, and the antireflective coating film reduces reflections of radiation during the selective exposing of the radiation sensitive film. A fabrication process using the lithography process is also described.
摘要翻译：光刻工艺包括在衬底上形成抗反射涂层的步骤。在抗反射膜上形成膜，在膜上形成辐射敏感膜。曝光敏感膜被选择性曝光。在选择性曝光期间，防反射膜覆盖其上形成有辐射敏感膜的膜的部分的下表面，并且抗反射涂膜在放射敏感膜的选择性曝光期间减少了辐射的反射。还描述了使用光刻工艺的制造工艺。

5. 发明申请

US20090215247A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20090215247A1
公开(公告)日：2009-08-27
申请号：US12434637
申请日：2009-05-02
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/304
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在扫描装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上晶片通过照明装置（7a）和（7b）。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

6. 发明授权

US07998793B2 Light illumination during wafer dicing to prevent aluminum corrosion 有权
标题翻译：晶圆切割时的光照，防止铝腐蚀
公开(公告)号：US07998793B2
公开(公告)日：2011-08-16
申请号：US12434637
申请日：2009-05-02
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/00
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在切割装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上晶片通过照明装置（7a）和（7b）。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

7. 发明申请

US20080138962A1 Manufacturing Method of Semiconductor Device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20080138962A1
公开(公告)日：2008-06-12
申请号：US11632993
申请日：2004-07-22
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/304
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在切割装置（1）的盖（8）的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上通过照明装置（7a）和（7b）的晶片。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

8. 发明授权

US10026968B2 Method for producing fuel cell electrode catalyst 有权
公开(公告)号：US10026968B2
公开(公告)日：2018-07-17
申请号：US14000569
申请日：2012-01-04
申请人： Masaki Horikita , Kunchan Lee , Yasuaki Wakizaka , Takashi Sato
发明人： Masaki Horikita , Kunchan Lee , Yasuaki Wakizaka , Takashi Sato
IPC分类号： H01M4/88 , H01M4/90 , H01M8/1018
CPC分类号： H01M4/8882 , H01M4/8825 , H01M4/9008 , H01M4/9016 , H01M4/9083 , H01M2008/1095
摘要： A method for producing a fuel cell electrode catalyst, including a step (I) of bringing an aqueous solution of a transition metal compound (1) into contact with ammonia and/or ammonia water to generate a precipitate (A) containing an atom of the transition metal, a step (II) of mixing at least the precipitate (A), an organic compound (B), and a liquid medium (C) to obtain a catalyst precursor liquid, and a step (IV) of subjecting the solid in the catalyst precursor liquid to heat treatment at a temperature of 500 to 1200° C. to obtain an electrode catalyst; a portion or the entirety of the transition metal compound (1) being a compound containing a transition metal element of group 4 or group 5 of the periodic table; and the organic compound (B) being at least one selected from sugars and the like.

9. 发明授权

US09818495B2 Containment vessel and nuclear power plant 有权
公开(公告)号：US09818495B2
公开(公告)日：2017-11-14
申请号：US13988966
申请日：2011-09-14
申请人： Takashi Sato
发明人： Takashi Sato
IPC分类号： G21C13/10 , G21C13/00 , G21C9/004 , G21C9/008 , G21C9/06 , G21C15/18 , G21F9/02
CPC分类号： G21C13/00 , G21C9/004 , G21C9/008 , G21C9/06 , G21C13/10 , G21C15/18 , G21F9/02 , Y02E30/40
摘要： A containment vessel has an inner shell covering a reactor pressure vessel and an outer shell forming an outer well which is a gas-tight space covering the horizontal outer periphery of the inner shell. The inner shell has a first cylindrical side wall surrounding the horizontal periphery of the reactor pressure vessel, a containment vessel head which covers the upper part of the reactor pressure vessel, and a first top slab connecting in a gas-tight manner the periphery of the containment vessel head and the upper end of the first cylindrical side wall. The outer shell has a second cylindrical side wall surrounding the outer periphery of the first cylindrical side wall, and also has a second to slab connecting in a gas-tight manner the vicinity of the upper end of the second cylindrical side wall and the first cylindrical side wall.

10. 发明授权

US09653994B2 Power supply circuit and apparatus including the circuit 有权
公开(公告)号：US09653994B2
公开(公告)日：2017-05-16
申请号：US13215035
申请日：2011-08-22
申请人： Katsumi Taguchi , Takashi Sato
发明人： Katsumi Taguchi , Takashi Sato
IPC分类号： G01R31/00 , H02M3/158 , H02M1/36
CPC分类号： H02M3/158 , H02M1/36
摘要： A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.

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