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1. 发明授权

US07238598B2 Formation of a semiconductor substrate that may be dismantled and obtaining a semiconductor element 有权
标题翻译：可以拆卸并获得半导体元件的半导体衬底的形成
公开(公告)号：US07238598B2
公开(公告)日：2007-07-03
申请号：US10530640
申请日：2003-10-03
申请人： Chrystelle Lagahe , Bernard Aspar , Aurélie Beaumont
发明人： Chrystelle Lagahe , Bernard Aspar , Aurélie Beaumont
IPC分类号： H01L21/425
CPC分类号： H01L21/76254
摘要： A method for forming a semiconductor substrate that can be dismantled, comprising the following steps: introduction of gaseous species in the substrate according to conditions enabling the constitution of an embrittled layer by the presence in said layer of micro-cavities and/or micro-bubbles, a thin layer of semiconductor material thus being delimited between the embrittled layer and one face of the substrate, thermal treatment of the substrate to increase the brittleness level of the embrittled layer, said thermal treatment being continued until the appearance of local deformations on said face of the substrate in the form of blisters but without generating exfoliations of the thin layer during this step and during the continuation of the method, epitaxy of semiconductor material on said face of the substrate to provide at least one epitaxial layer on said thin film.
摘要翻译：一种用于形成可拆卸的半导体衬底的方法，包括以下步骤：根据能够通过存在所述微腔和/或微泡中存在脆化层的条件在衬底中引入气态物质，因此薄层的半导体材料被限定在脆化层和基底的一个面之间，热处理基底以增加脆化层的脆性水平，所述热处理继续进行，直到在所述表面上出现局部变形的泡沫形式，但是在该步骤期间和在该方法的继续期间不产生薄层的剥落，在衬底的所述表面上外延半导体材料，以在所述薄膜上提供至少一个外延层。

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