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1. 发明授权

US06603269B1 Resonant chamber applicator for remote plasma source 失效
标题翻译：用于远程等离子体源的谐振室施加器
公开(公告)号：US06603269B1
公开(公告)日：2003-08-05
申请号：US09593586
申请日：2000-06-13
申请人： Be Van Vo , Salvador P. Umotoy , Son N. Trinh , Lawrence Chung-Lai Lei , Sergio Edelstein , Avi Tepman , Chien-Teh Kao , Kenneth Tsai
发明人： Be Van Vo , Salvador P. Umotoy , Son N. Trinh , Lawrence Chung-Lai Lei , Sergio Edelstein , Avi Tepman , Chien-Teh Kao , Kenneth Tsai
IPC分类号： C23C1600
CPC分类号： H01J37/32192
摘要： An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.
摘要翻译：提供了用于远程产生用于半导体制造的等离子体的改进的等离子体施加器。在一个实施例中，等离子体施加器由腔室组件，可移除波导适配器和将适配器固定到腔室组件的圆形夹具构成。腔室组件包括孔板，微波透明窗，室主体和安装在腔体上的微波传感器。室主体具有适于将微波能量引入空腔中的近端开口，以及大致位于与近端开口相反的空腔相对侧的远端。腔体还具有气体出口端口，其适于允许将激发气体流出空腔，气体入口端口适于将前体气体引入空腔。气体入口具有中心轴线，该中心轴线设置在腔室主体的近端开口和本体的近端开口和远端之间的中点之间。

2. 发明申请

US20060070875A1 Coils for generating a plasma and for sputtering 有权
公开(公告)号：US20060070875A1
公开(公告)日：2006-04-06
申请号：US11229139
申请日：2005-09-15
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C14/00 , C25B11/00
CPC分类号： C23C14/34 , H01J37/321 , H01J37/34
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

3. 发明授权

US06783639B2 Coils for generating a plasma and for sputtering 有权
公开(公告)号：US06783639B2
公开(公告)日：2004-08-31
申请号：US10052951
申请日：2002-01-17
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3402
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

4. 发明授权

US06368469B1 Coils for generating a plasma and for sputtering 失效
公开(公告)号：US06368469B1
公开(公告)日：2002-04-09
申请号：US08851946
申请日：1997-05-06
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3402
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

5. 发明授权

US08398832B2 Coils for generating a plasma and for sputtering 有权
公开(公告)号：US08398832B2
公开(公告)日：2013-03-19
申请号：US11229139
申请日：2005-09-15
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard E. Grunes , Avi Tepman , John C. Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard E. Grunes , Avi Tepman , John C. Forster , Praburam Gopalraja
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , H01J37/321 , H01J37/34
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

6. 发明授权

US06350353B2 Alternate steps of IMP and sputtering process to improve sidewall coverage 失效
公开(公告)号：US06350353B2
公开(公告)日：2002-02-26
申请号：US09449202
申请日：1999-11-24
申请人： Praburam Gopalraja , Sergio Edelstein , Avi Tepman , Peijun Ding , Debabrata Ghosh , Nirmalya Maity
发明人： Praburam Gopalraja , Sergio Edelstein , Avi Tepman , Peijun Ding , Debabrata Ghosh , Nirmalya Maity
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/046 , C23C14/358 , H01J37/321 , H01J37/3408
摘要： The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

7. 发明授权

US06254746B1 Recessed coil for generating a plasma 失效
标题翻译：用于产生等离子体的嵌入式线圈
公开(公告)号：US06254746B1
公开(公告)日：2001-07-03
申请号：US08853024
申请日：1997-05-08
申请人： Anantha Subramani , John C. Forster , Bradley O. Stimson , Sergio Edelstein , Howard Grunes , Avi Tepman , Zheng Xu
发明人： Anantha Subramani , John C. Forster , Bradley O. Stimson , Sergio Edelstein , Howard Grunes , Avi Tepman , Zheng Xu
IPC分类号： C23C1434
CPC分类号： H01J37/32504 , H01J37/321 , H01J37/32623 , H01J37/32651 , H01J37/34
摘要： A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.
摘要翻译：提供了一种用于半导体制造系统中的等离子体室的凹陷线圈。嵌入线圈减少材料在线圈上的沉积，这又导致线圈在工件上脱落的颗粒物质的减少。

8. 发明授权

US07369233B2 Optical system for measuring samples using short wavelength radiation 有权
标题翻译：用于使用短波长辐射测量样品的光学系统
公开(公告)号：US07369233B2
公开(公告)日：2008-05-06
申请号：US10718126
申请日：2003-11-19
申请人： Mehrdad Nikoonahad , Shing Lee , Hidong Kwak , Sergio Edelstein , Guoheng Zhao , Gary Janik
发明人： Mehrdad Nikoonahad , Shing Lee , Hidong Kwak , Sergio Edelstein , Guoheng Zhao , Gary Janik
IPC分类号： G01N21/17
CPC分类号： G01N21/9501 , G01N21/8806
摘要： In an optical system measuring sample characteristics, by reducing the amount of ambient absorbing gas or gases and moisture present in at least a portion of the illumination and detection paths experienced by vacuum ultraviolet (VUV) radiation used in the measurement process, the attenuation of such wavelength components can be reduced. Such reduction can be accomplished by a process without requiring the evacuation of all gases and moisture from the measurement system. In one embodiment, the reduction can be accomplished by displacing at least some of the absorbing gas(es) and moisture present in at least a portion of the measuring paths so as to reduce the attenuation of VUV radiation. In this manner, the sample does not need to be placed in a vacuum, thereby enhancing system throughput.
摘要翻译：在测量样品特性的光学系统中，通过减少在测量过程中使用的真空紫外线（VUV）辐射所经历的照明和检测路径的至少一部分中存在的环境吸收气体或气体和水分的量，可以减少波长分量。这种还原可以通过一种方法来实现，而不需要从测量系统排出所有的气体和水分。在一个实施例中，可以通过置换至少部分测量路径中的至少一些吸收气体和水分来实现还原，以便减少VUV辐射的衰减。以这种方式，样品不需要放置在真空中，从而提高系统产量。

9. 发明授权

US06290865B1 Spin-rinse-drying process for electroplated semiconductor wafers 有权
标题翻译：电镀半导体晶圆的旋转干燥工艺
公开(公告)号：US06290865B1
公开(公告)日：2001-09-18
申请号：US09201566
申请日：1998-11-30
申请人： Mark Lloyd , Ashok K. Sinha , Sergio Edelstein , Michael Sugarman
发明人： Mark Lloyd , Ashok K. Sinha , Sergio Edelstein , Michael Sugarman
IPC分类号： C23F100
CPC分类号： H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67051 , H01L21/6708 , Y10S438/928
摘要： The present invention removes unwanted deposited material from a substrate backside by chemically dissolving the material, while substantially preventing dissolution of the material from the substrate front side. Preferably, the dissolving process is included with a spin-rinse-dry process and uses a greater flow rate of rinsing fluid directed onto the front side compared to the flow rate of dissolving fluid directed onto a substrate backside to protect the substrate front side while the unwanted backside material is removed. The present invention includes the method of dissolving the unwanted material from the backside and edge and the associated apparatus.
摘要翻译：本发明通过化学溶解材料从衬底背面去除不想要的沉积材料，同时基本上防止材料从衬底前侧的溶解。优选地，溶解过程包括在旋转冲洗干燥过程中，并且与引导到衬底背面的溶解流体的流速相比，使用更大的冲洗流体流量，以保护衬底前侧，同时去除不需要的背面材料。本发明包括从背面和边缘以及相关联的装置中溶解不需要的材料的方法。

10. 发明授权

US07248062B1 Contactless charge measurement of product wafers and control of corona generation and deposition 有权
标题翻译：产品晶圆的非接触式电荷测量和电晕发生和沉积的控制
公开(公告)号：US07248062B1
公开(公告)日：2007-07-24
申请号：US10701112
申请日：2003-11-04
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
摘要翻译：提供了用于确定样品性质的系统和方法。样品可以是产品晶片。该方法可以包括将聚焦斑点偏置在样本上。该方法还可以包括测量样品上的测量点的参数。测量点可能与聚焦点重叠。此外，该方法可以包括根据测量的参数确定样品的性质。还提供了用于改变电晕源的性能的系统和方法。该方法可以包括改变电晕源内的环境的属性。该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

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