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1. 发明授权

US06350353B2 Alternate steps of IMP and sputtering process to improve sidewall coverage 失效
公开(公告)号：US06350353B2
公开(公告)日：2002-02-26
申请号：US09449202
申请日：1999-11-24
申请人： Praburam Gopalraja , Sergio Edelstein , Avi Tepman , Peijun Ding , Debabrata Ghosh , Nirmalya Maity
发明人： Praburam Gopalraja , Sergio Edelstein , Avi Tepman , Peijun Ding , Debabrata Ghosh , Nirmalya Maity
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/046 , C23C14/358 , H01J37/321 , H01J37/3408
摘要： The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

2. 发明授权

US07169271B2 Magnetron executing planetary motion adjacent a sputtering target 有权
标题翻译：磁控管在溅射靶附近执行行星运动
公开(公告)号：US07169271B2
公开(公告)日：2007-01-30
申请号：US10862257
申请日：2004-06-07
申请人： Ilyoung Richard Hong , James Tsung , Daniel Clarence Lubben , Peijun Ding , Nirmalya Maity
发明人： Ilyoung Richard Hong , James Tsung , Daniel Clarence Lubben , Peijun Ding , Nirmalya Maity
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/345 , C23C14/35 , C23C14/355 , H01J37/3405 , H01J37/3408
摘要： A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.
摘要翻译：小型磁体组件在逆行星行星或行星路径周围围绕目标物的背面进行扫描，等离子体溅射包括围绕靶的中心轴线的轨道旋转和围绕目标中心轴线旋转的另一轴线的行星旋转。磁铁组件通过目标中心，从而允许全目标覆盖。相对于相应轴的两个旋转的适当选择的比率在目标周边附近产生比在目标中心附近更慢的磁体速度。齿轮行星机构包括旋转驱动板，固定中心齿轮和惰轮以及可驱动地支撑在驱动平面上的悬臂磁体组件的驱动平面中的从动齿轮。带式行星机构包括固定中心绞盘，支撑磁体组件的从动轮和缠绕在其上的带。

3. 发明授权

US08696875B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08696875B2
公开(公告)日：2014-04-15
申请号：US10495506
申请日：2002-11-14
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述腔室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

4. 发明申请

US20090053888A1 Method of depositing a diffusion barrier layer which provides an improved interconnect 审中-公开
标题翻译：沉积扩散阻挡层的方法，其提供改进的互连
公开(公告)号：US20090053888A1
公开(公告)日：2009-02-26
申请号：US12288540
申请日：2008-10-20
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
IPC分类号： H01L21/4763 , H01L21/31
CPC分类号： H01L21/02183 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/02266 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876
摘要： A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer.
摘要翻译：一种用覆盖的导电层或填充物沉积具有降低半导体器件互连电阻率的渗透阻挡层的方法。通过诱导在含钽隔离层内形成α钽来实现较低的电阻率。

5. 发明申请

US20070241458A1 Metal / metal nitride barrier layer for semiconductor device applications 失效
标题翻译：用于半导体器件应用的金属/金属氮化物阻挡层
公开(公告)号：US20070241458A1
公开(公告)日：2007-10-18
申请号：US11809153
申请日：2007-05-30
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
IPC分类号： H01L23/48
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.
摘要翻译：用于半导体器件应用的金属/金属氮化物阻挡层。阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

6. 外观设计

USD440582S1 Sputtering chamber coil 失效
公开(公告)号：USD440582S1
公开(公告)日：2001-04-17
申请号：US29090631
申请日：1998-07-13
申请人： Praburam Gopalraja , Zheng Xu , Michael Rosenstein , John C. Forster , Peijun Ding
设计人： Praburam Gopalraja , Zheng Xu , Michael Rosenstein , John C. Forster , Peijun Ding

7. 发明授权

US07807030B2 Small scanned magentron 有权
标题翻译：小扫描魔术师
公开(公告)号：US07807030B2
公开(公告)日：2010-10-05
申请号：US11610849
申请日：2006-12-14
申请人： Ilyoung Richard Hong , James Tsung , Daniel Clarence Lubben , Peijun Ding , Nirmalya Maity
发明人： Ilyoung Richard Hong , James Tsung , Daniel Clarence Lubben , Peijun Ding , Nirmalya Maity
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/345 , C23C14/35 , C23C14/355 , H01J37/3405 , H01J37/3408
摘要： A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target.
摘要翻译：具有面积小于目标区域的10％的磁体组件的小型磁体组件沿着包括围绕靶的中心轴线的轨道旋转的等离子体溅射的靶的背面以逆行星行星或行星路径扫描，围绕围绕目标中心轴线旋转的另一轴线的行星旋转。磁铁组件通过目标中心，从而允许全目标覆盖。相对于相应轴的两个旋转的适当选择的比率在目标周边附近产生比在目标中心附近更慢的磁体速度。齿轮行星机构包括旋转驱动板，固定中心齿轮和惰轮以及可驱动地支撑在驱动平面上的悬臂磁体组件的驱动平面中的从动齿轮。

8. 发明授权

US06841050B2 Small planetary magnetron 有权
标题翻译：小行星磁控管
公开(公告)号：US06841050B2
公开(公告)日：2005-01-11
申请号：US10152494
申请日：2002-05-21
申请人： Ilyoung Richard Hong , James Tsung , Daniel Clarence Lubben , Peijun Ding , Nirmalya Maity
发明人： Ilyoung Richard Hong , James Tsung , Daniel Clarence Lubben , Peijun Ding , Nirmalya Maity
IPC分类号： C23C14/32 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3455 , C23C14/345 , C23C14/35 , C23C14/355 , H01J37/3405 , H01J37/3408
摘要： A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.
摘要翻译：小型磁体组件在逆行星行星或行星路径周围围绕目标物的背面进行扫描，等离子体溅射包括围绕靶的中心轴线的轨道旋转和围绕目标中心轴线旋转的另一轴线的行星旋转。磁铁组件通过目标中心，从而允许全目标覆盖。相对于相应轴的两个旋转的适当选择的比率在目标周边附近产生比在目标中心附近更慢的磁体速度。齿轮行星机构包括旋转驱动板，固定中心齿轮和惰轮以及可驱动地支撑在驱动平面上的悬臂磁体组件的驱动平面中的从动齿轮。带式行星机构包括固定中心绞盘，支撑磁体组件的从动轮和缠绕在其上的带。

9. 发明申请

US20050272254A1 Method of depositing low resistivity barrier layers for copper interconnects 审中-公开
标题翻译：沉积用于铜互连的低电阻阻挡层的方法
公开(公告)号：US20050272254A1
公开(公告)日：2005-12-08
申请号：US11184404
申请日：2005-07-18
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
IPC分类号： C23C14/06 , C23C14/16 , C23C14/32 , H01L21/285 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02183 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/02266 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876
摘要： We have discovered a method of providing a thin approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩ cm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
摘要翻译：我们已经发现了一种提供大约约2埃至大约100埃的Ta N种子层的薄膜的方法，当钽沉积在Ta上时可用于诱导形成α钽， SUB> N 种子层。此外，Ta N N种子层在30μΩ·cm的范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。在该方法的一个实施方案中，TaN膜在其表面上形成Ta N N种子层。在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

10. 发明授权

US08668816B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08668816B2
公开(公告)日：2014-03-11
申请号：US11933157
申请日：2007-10-31
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
摘要翻译：用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者交替地，在相同或不同的室中。此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。辅助磁体可以是永磁体或电磁体。

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