专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009138138A2 METHOD FOR PRODUCING CHIPS 审中-公开
标题翻译：用于生产CHIPS
公开(公告)号：WO2009138138A2
公开(公告)日：2009-11-19
申请号：PCT/EP2008066593
申请日：2008-12-02
申请人： BOSCH GMBH ROBERT , KRAMER TORSTEN , BOEHRINGER MATTHIAS , PINTER STEFAN , BENZEL HUBERT , ILLING MATTHIAS , HAAG FRIEDER , ARMBRUSTER SIMON
发明人： KRAMER TORSTEN , BOEHRINGER MATTHIAS , PINTER STEFAN , BENZEL HUBERT , ILLING MATTHIAS , HAAG FRIEDER , ARMBRUSTER SIMON
IPC分类号： B81C1/00
CPC分类号： H01L25/50 , B81C1/0038 , B81C2201/0191 , H01L21/02002 , H01L24/03 , H01L24/05 , H01L2224/05599 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941
摘要： The invention relates to a method for producing chips (1, 2), whereby at least one membrane (11, 12) is produced in the surface layer of a semiconductor substrate (10), said membrane spanning a cavity (13). The functionality of the chip (1, 2) is then integrated into the membrane (11, 12). In order to subdivide the chip (1, 2), the membrane (11, 12) is detached from the substrate composite. The method according to the invention is characterized by metalizing the back of the chip in an electroplating process before the chip (1, 2) is detached.
摘要翻译：提供了一种用于生产的芯片（1,2）已经提出，其中最初在一个半导体衬底（10）的至少一个膜（11，12）的表面层中产生跨越的空腔（13）。接着，将芯片的功能（1，2）在所述膜（11，12）被集成。以单个模具（1，2），所述隔膜（11，12）从所述复合衬底释放。根据本发明，该芯片回之前剥离用芯片（1，2）被金属化在电镀工艺中的复合衬底上。

2. 发明申请

WO2010006849A3 PROCESS FOR MANUFACTURING A COMPONENT, PROCESS FOR MANUFACTURING A COMPONENT ARRANGEMENT, COMPONENT AND COMPONENT ARRANGEMENT 审中-公开
标题翻译：制造构件的方法，制造构件的方法，构件和构件
公开(公告)号：WO2010006849A3
公开(公告)日：2010-12-29
申请号：PCT/EP2009057106
申请日：2009-06-09
申请人： BOSCH GMBH ROBERT , KRAMER TORSTEN , PINTER STEFAN , BENZEL HUBERT , ILLING MATTHIAS , HAAG FRIEDER , ARMBRUSTER SIMON
发明人： KRAMER TORSTEN , PINTER STEFAN , BENZEL HUBERT , ILLING MATTHIAS , HAAG FRIEDER , ARMBRUSTER SIMON
IPC分类号： B81B7/00
CPC分类号： B81C99/008 , B81B7/0006 , B81B2207/093
摘要： The invention proposes a process for manufacturing a component, wherein, in a first manufacturing step, a basic structure having a substrate, a membrane and a cavern region is provided, wherein the membrane is arranged substantially parallel to a plane of principal extent of the substrate, wherein the cavern region is arranged between the substrate and the membrane, wherein the cavern region has an access opening and wherein, in a second manufacturing step, a first conductive layer is arranged at least partially in the cavern region and, in particular, on a second side of the membrane which faces towards the substrate perpendicularly to the plane of principal extent.
摘要翻译：它提出了一种方法，用于制造装置，其特征在于，提供了一种基本结构，其包括一基板，一隔膜和在第一制造工序的腔体区域，其中所述膜基本上平行于所述衬底的主平面设置，所述基板和所述隔膜之间被布置在腔体区域，所述具有接入开口，并且其中的第一导电层被布置在至少部分地在腔区域中的第二制造工序，特别是垂直地朝向所述膜的第二侧的主延伸面的衬底上腔区域。

3. 发明申请

WO2009059857A3 MICROMECHANICAL COMPONENT COMPRISING A MEMBRANE LATTICE 审中-公开
标题翻译：微型机械结构元件与MEMBRANGITTER
公开(公告)号：WO2009059857A3
公开(公告)日：2009-07-16
申请号：PCT/EP2008063306
申请日：2008-10-06
申请人： BOSCH GMBH ROBERT , KRAMER TORSTEN , BENZEL HUBERT , ILLING MATTHIAS , ARMBRUSTER SIMON , BRASAS JOERG
发明人： KRAMER TORSTEN , BENZEL HUBERT , ILLING MATTHIAS , ARMBRUSTER SIMON , BRASAS JOERG
IPC分类号： B81B3/00
CPC分类号： B81B3/007 , B81B2203/0127 , B81B2203/0315 , B81C1/00476
摘要： The invention relates to a micromechanical component comprising a substrate, a stabilisation element provided with openings, and a cavity located between the stabilisation element and the substrate. According to the invention, the minimum depth of the cavity can be deduced from the distribution of the openings in the stabilisation element. Essentially, the distance between the openings is to be taken into account for the determination of the required depth of the cavity. These distances are advantageously obtained by determining the distances between the centroids of the individual openings.
摘要翻译：本发明描述了一种具有基板，有开口的稳定元件和位于所述稳定元件和所述衬底之间的空腔中的微机械部件。根据本发明，可以从稳定元件中的开口的分布推断出洞穴的最小深度。基本上，它提供了在确定必要的洞穴深度时考虑开口彼此之间的距离。这有利地通过确定各个开口的表面中心之间彼此之间的距离来实现。

4. 发明申请

WO2009149980A3 METHOD FOR PRODUCING A MICROMECHANICAL MEMBRANE STRUCTURE WITH ACCESS FROM THE REAR OF THE SUBSTRATE 审中-公开
标题翻译：用于从基板背面获得微机械膜结构的方法
公开(公告)号：WO2009149980A3
公开(公告)日：2010-04-22
申请号：PCT/EP2009054698
申请日：2009-04-21
申请人： BOSCH GMBH ROBERT , KRAMER TORSTEN , AHLES MARCUS , GRUNDMANN ARMIN , KNESE KATHRIN , BENZEL HUBERT , SCHUERMANN GREGOR , ARMBRUSTER SIMON
发明人： KRAMER TORSTEN , AHLES MARCUS , GRUNDMANN ARMIN , KNESE KATHRIN , BENZEL HUBERT , SCHUERMANN GREGOR , ARMBRUSTER SIMON
IPC分类号： B81C1/00
CPC分类号： B81C1/00158 , B81B2201/0257 , B81B2201/0264 , B81C2201/0115 , B81C2201/0136 , G01L9/0042
摘要： The invention proposes a particularly simple, cost-effective method for producing a micromechanical membrane structure with access from the rear of the substrate. Said method is based on a p-doped Si substrate (1) and comprises the following process steps: n-doping of at least one continuous lattice-type region (2) of the substrate surface; porous etching of a substrate region (5) below the n-doped lattice structure (2); creation of a cavity (7) in said substrate region (5) below the n-doped lattice structure (2); growing of a first monocrystalline silicon epitaxial layer (8) on the n-doped lattice structure (2). The invention is characterised in that at least one opening (6) in the n-doped lattice structure (2) is dimensioned in such a way that it is not closed by the growing first epitaxial layer (8) and instead forms an access opening (9) to the cavity (7); an oxide layer (10) is created on the cavity wall; A rear face access (13) to the cavity (7) is created, the oxide layer (10) acting as an etch stop layer; and the oxide layer (10) is removed in the region of the cavity (7) producing a rear face access (13) to the membrane structure (14) lying above the cavity (7).
摘要翻译：本发明提出了一种特别简单且成本有效的方法，用于制造从基底后部进入的微机械膜结构。该方法从p掺杂的Si基板（1）开始延伸，并且包括以下工艺步骤：至少一个连续的网格区域的n型掺杂（2）基片表面的，多孔刻蚀衬底部分（5）的n型掺杂的晶格结构的下面（2 ），在n-掺杂晶格结构（2）下方的该衬底区域（5）中产生洞穴（7）; 在n型掺杂的晶格结构（2）上生长第一单晶硅外延层（8）。它的特征在于，至少一个开口（6）设置在所述n型掺杂的晶格结构的尺寸（2），以便它不被生长第一外延层（8）封闭，但进入开口（9）到所述腔（7）的形式 ; 在洞穴壁上产生氧化层（10）; 产生到洞穴（7）的背部入口（13），其中洞穴壁上的氧化物层（10）用作蚀刻停止层; 并且，氧化物层（10）在所述腔（7）的区域中去除，使得形成在膜结构的背面访问（13）到所述洞穴上述（7）（14）形成。

5. 发明申请

WO2009149980A4 METHOD FOR PRODUCING A MICROMECHANICAL MEMBRANE STRUCTURE WITH ACCESS FROM THE REAR OF THE SUBSTRATE 审中-公开
标题翻译：一种用于生产微机械膜片结构，访问从基底BACK
公开(公告)号：WO2009149980A4
公开(公告)日：2010-06-10
申请号：PCT/EP2009054698
申请日：2009-04-21
申请人： BOSCH GMBH ROBERT , KRAMER TORSTEN , AHLES MARCUS , GRUNDMANN ARMIN , KNESE KATHRIN , BENZEL HUBERT , SCHUERMANN GREGOR , ARMBRUSTER SIMON
发明人： KRAMER TORSTEN , AHLES MARCUS , GRUNDMANN ARMIN , KNESE KATHRIN , BENZEL HUBERT , SCHUERMANN GREGOR , ARMBRUSTER SIMON
IPC分类号： B81C1/00
CPC分类号： B81C1/00158 , B81B2201/0257 , B81B2201/0264 , B81C2201/0115 , B81C2201/0136 , G01L9/0042
摘要： The invention proposes a particularly simple, cost-effective method for producing a micromechanical membrane structure with access from the rear of the substrate. Said method is based on a p-doped Si substrate (1) and comprises the following process steps: n-doping of at least one continuous lattice-type region (2) of the substrate surface; porous etching of a substrate region (5) below the n-doped lattice structure (2); creation of a cavity (7) in said substrate region (5) below the n-doped lattice structure (2); growing of a first monocrystalline silicon epitaxial layer (8) on the n-doped lattice structure (2). The invention is characterised in that at least one opening (6) in the n-doped lattice structure (2) is dimensioned in such a way that it is not closed by the growing first epitaxial layer (8) and instead forms an access opening (9) to the cavity (7); an oxide layer (10) is created on the cavity wall; A rear face access (13) to the cavity (7) is created, the oxide layer (10) acting as an etch stop layer; and the oxide layer (10) is removed in the region of the cavity (7) producing a rear face access (13) to the membrane structure (14) lying above the cavity (7).
摘要翻译：本发明提供了，提出了一种特别简单和廉价的用于产生具有从所述基材的背面访问的微机械的膜结构的方法。该方法从p掺杂的Si基板（1）开始延伸，并且包括以下工艺步骤：至少一个连续的网格区域的n型掺杂（2）基片表面的，多孔刻蚀衬底部分（5）的n型掺杂的晶格结构的下面（2 ），在制造空腔（7）的所述衬底区（5）的n型掺杂的晶格结构下方（2）; 在n型掺杂的晶格结构生长第一单晶硅外延层（8）（2）。它的特征在于，至少一个开口（6）设置在所述n型掺杂的晶格结构的尺寸（2），以便它不被生长第一外延层（8）封闭，但进入开口（9）到所述腔（7）的形式 ; 即在Kavernenwandung产生的氧化物层（10）; 所产生的后入口（13）到所述腔（7），其中，所述氧化物层（10）作为在Kavernenwandung蚀刻停止; 并且，氧化物层（10）在所述腔（7）的区域中去除，使得形成在膜结构的背面访问（13）到所述洞穴上述（7）（14）形成。

6. 发明申请

WO2009127273A3 METHOD FOR THE PRODUCTION OF A MICROMECHANICAL COMPONENT HAVING ELECTRODE UNITS ON TWO PLANES, AND MICROMECHANICAL COMPONENT 审中-公开
标题翻译：用于微机械结构与电极单元两个级别和微机械结构
公开(公告)号：WO2009127273A3
公开(公告)日：2010-05-06
申请号：PCT/EP2008066715
申请日：2008-12-03
申请人： BOSCH GMBH ROBERT , PIRK TJALF , PINTER STEFAN , BENZEL HUBERT , WEBER HERIBERT , KRUEGER MICHAEL , SATTLER ROBERT , MUCHOW JOERG , FRITZ JOACHIM , SCHELLING CHRISTOPH , FRIESE CHRISTOPH
发明人： PIRK TJALF , PINTER STEFAN , BENZEL HUBERT , WEBER HERIBERT , KRUEGER MICHAEL , SATTLER ROBERT , MUCHOW JOERG , FRITZ JOACHIM , SCHELLING CHRISTOPH , FRIESE CHRISTOPH
IPC分类号： B81B3/00 , B81C1/00 , G02B26/08
CPC分类号： B81C1/00007 , B81B2201/032 , B81B2201/033 , B81B2201/045 , B81B2203/019 , B81C1/00142 , B81C2201/017
摘要： The invention relates to a method for producing a micromechanical component (10), encompassing the following steps: a first electrode unit (14) is formed in a first position relative to a bottom substrate (16); a supporting element (22) is formed which comprises a first subunit (23, 28, 30) having a first internal stress and a second subunit (23, 28, 30) having a second internal stress that differs from the first internal stress, said supporting element (22) being fastened to the first electrode unit (14) at a first end while being fastened to the bottom substrate (16) at a second end; and the supporting element (22) is bent as a result of the difference between the first internal stress and the second internal stress, the bending action causing the first electrode unit (14) to be moved from the first position relative to the bottom substrate (16) into a second position relative to the bottom substrate (16). The invention further relates to a micromechanical component (10).
摘要翻译：本发明涉及一种用于微机械部件（10）的制造方法，包括以下步骤：在一个第一位置到一个基底（16）形成第一电极单元（14）; 形成具有具有与方向上从所述第一内部应力第二残余应力偏离，第一本征电压和第二子单元（23,28,30）的第一子单元（23,28,30）的支撑部件（22），其中在所述支撑构件（22）第一端连接到所述第一电极部（14）和在第二端处与基底基板（16）被安装; 和支撑部件（22）弯曲，由于第一内部应力和第二特征电压之间的差，由于从所述第一位置到所述基底（16），所述支撑构件（22），所述第一电极单元（14）的相对于所述的第二位置的弯曲基底基板（16）被调整。此外，本发明提供了一种微机械部件（10）涉及。

7. 发明申请

WO2009095108A2 FIXED BODY JOINT AND MICROMECHANICAL COMPONENT 审中-公开
标题翻译： SOLID STATE关节和微机械部件
公开(公告)号：WO2009095108A2
公开(公告)日：2009-08-06
申请号：PCT/EP2008065532
申请日：2008-11-14
申请人： BOSCH GMBH ROBERT , PIRK TJALF , PINTER STEFAN , BENZEL HUBERT , WEBER HERIBERT , KRUEGER MICHAEL , SATTLER ROBERT , NJIKAM NJIMONZIE FREDERIC , MUCHOW JOERG , FRITZ JOACHIM , SCHELLING CHRISTOPH , FRIESE CHRISTOPH
发明人： PIRK TJALF , PINTER STEFAN , BENZEL HUBERT , WEBER HERIBERT , KRUEGER MICHAEL , SATTLER ROBERT , NJIKAM NJIMONZIE FREDERIC , MUCHOW JOERG , FRITZ JOACHIM , SCHELLING CHRISTOPH , FRIESE CHRISTOPH
IPC分类号： B81B7/00
CPC分类号： G02B26/0841 , B81B7/0006 , B81B2201/042 , B81B2203/058
摘要： The invention relates to a fixed body joint (16) for suspending a micromechanical device (2), comprising a support beam (17) and a thin layer (22) applied to the support beam (17). The thin layer extends laterally beyond the support beam (17). One or more conductor tracks (18) are embedded in said thin layer (22).
摘要翻译：根据本发明（16），用于悬挂的微机械装置（2）包括在所述轴承的光束（17）的支撑梁（17）和一个所述的固体关节淀积的薄层（22）。薄层横向延伸出经轴承梁（17）。在薄层（22）的一个或多个导体轨迹（18）嵌入。

8. 发明申请

WO2009124605A2 MICROMECHANICAL COMPONENT HAVING A SLANTED STRUCTURE AND CORRESPONDING PRODUCTION METHOD 审中-公开
标题翻译：与斜面结构及相应方法微机械结构
公开(公告)号：WO2009124605A2
公开(公告)日：2009-10-15
申请号：PCT/EP2008066388
申请日：2008-11-28
申请人： BOSCH GMBH ROBERT , PIRK TJALF , PINTER STEFAN , BENZEL HUBERT , WEBER HERIBERT , KRUEGER MICHAEL , SATTLER ROBERT , NJIKAM NJIMONZIE FREDERIC , MUCHOW JOERG , FRITZ JOACHIM , SCHELLING CHRISTOPH , FRIESE CHRISTOPH
发明人： PIRK TJALF , PINTER STEFAN , BENZEL HUBERT , WEBER HERIBERT , KRUEGER MICHAEL , SATTLER ROBERT , NJIKAM NJIMONZIE FREDERIC , MUCHOW JOERG , FRITZ JOACHIM , SCHELLING CHRISTOPH , FRIESE CHRISTOPH
IPC分类号： B81C1/00
CPC分类号： B81C1/00103 , B81B2203/0118 , B81B2203/0307
摘要： The invention relates to a micromechanical component having a slanted structure and to a corresponding production method. Said component comprises a substrate (1) having a surface (O); a first anchor (3e; 3e') that is provided on the surface (O) of the substrate (1) and which extends away from the substrate (1); and at least one arm (3c, 3d; 3c; 3c') that is oriented away from the anchor (3e; 3e') and that is provided on one lateral surface (S1, S2; S1'; S1'') of the anchor (3e; 3e').
摘要翻译：本发明提供了螺旋结构和相应的制造方法的微机械部件。该组件包括具有表面（O）的基板（1）; 在基板（1）的表面上的第一锚（3E，3E“），该（O）被设置，并且从衬底（1）延伸离开; 指向离开和在侧面的至少一个; '（其被从电枢倾斜臂3c和3d，3c和3c）中所提供的电枢的（S1，S2 S1”，S1' '）（3E，3E） '（图3e' 3E）是。

9. 发明申请

WO2009086978A3 PRODUCTION METHOD FOR A MICROMECHANICAL ELECTROSTATIC ADJUSTER DEVICE AND MICROMECHANICAL ELECTROSTATIC ADJUSTER DEVICE 审中-公开
标题翻译： PROCESS微型机械静态修正及MICRO电荷调节
公开(公告)号：WO2009086978A3
公开(公告)日：2010-04-01
申请号：PCT/EP2008065575
申请日：2008-11-14
申请人： BOSCH GMBH ROBERT , PIRK TJALF , PINTER STEFAN , BENZEL HUBERT , WEBER HERIBERT , KRUEGER MICHAEL , SATTLER ROBERT , MUCHOW JOERG , FRITZ JOACHIM , SCHELLING CHRISTOPH , FRIESE CHRISTOPH
发明人： PIRK TJALF , PINTER STEFAN , BENZEL HUBERT , WEBER HERIBERT , KRUEGER MICHAEL , SATTLER ROBERT , MUCHOW JOERG , FRITZ JOACHIM , SCHELLING CHRISTOPH , FRIESE CHRISTOPH
IPC分类号： B81C1/00
CPC分类号： B81C1/00666 , B81B2201/033 , B81B2201/042 , B81B2203/0136 , B81B2203/019 , B81C1/00166 , B81C2201/0167 , H02N1/002
摘要： The invention relates to a production method for a micromechanical electrostatic adjuster device (10), comprising the steps: application of a first conducting layer (12) to a substrate (28,30), etching the first conducting layer (12) to form at least one first electrode (16) in the material of the first conducting layer (12), application of a separation layer (32a) to the first conducting layer (12), application of a second conducting layer to the separation layer (32a), etching the second conducting layer to form at least one second electrode (22) in the material of the second conducting layer and application of a cover layer (40) to the second electrode (22) and bending the second electrode (22) by means of a mechanical compression load exerted on the second electrode (22) by means of the cover layer (40). The invention further relates to a corresponding micromechanical electrostatic adjuster device.
摘要翻译：本发明涉及一种用于微机械静电调节器（10）的制造方法，包括以下步骤：基部（28,30）上沉积第一导电层（12），蚀刻所述第一导电层（12），用于形成至少一个第一电极（ 16）从第一导电层（12）的材料，在施加第一导电层（12）上的脱模层（32a），其上沉积隔离层（32A）上的第二导电层，蚀刻第二导电层，以形成至少一个从第二导电层的材料，并施加于第二电极（22）的覆盖层（40）和由在第二电极上的覆盖层（40）中的一个的装置的第二电极（22）的弯曲的第二电极（22）（22）施加机械压应力。本发明还涉及一种相应的微机械静电调节器。

10. 发明申请

WO03009334A3 SEMICONDUCTOR COMPONENT ACTING AS CAPACITIVE HUMIDITY SENSOR, AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：半导体组件作为电容式湿度传感器，及其制造方法的半导体元件，
公开(公告)号：WO03009334A3
公开(公告)日：2003-08-28
申请号：PCT/DE0202481
申请日：2002-07-06
申请人： BOSCH GMBH ROBERT , BENZEL HUBERT , WEBER HERIBERT , SCHAEFER FRANK
发明人： BENZEL HUBERT , WEBER HERIBERT , SCHAEFER FRANK
IPC分类号： G01N27/22 , G01N27/12
CPC分类号： G01N27/121
摘要： The invention especially relates to a semiconductor component, such as especially a humidity sensor (200, 300, 400, 500, 600, 700, 800), comprising a semiconductor substrate (101), especially consisting of silicon for example, a first electrode (102), a second electrode (202), and at least one first layer (101) which can be accessed by a medium which acts on the semiconductor component from outside. The first layer is at least partially arranged between the first and the second electrode. In order to especially reduce the production costs of said semiconductor component, the first layer comprises pores (301) in which the medium at least partially passes.
摘要翻译：本发明尤其涉及到一个半导体器件，例如在特定的湿度传感器（200，300，400，500，600，700，800），其包含（半导体衬底（101），特别是由硅制成的，第一电极（102）和第二电极 202）和至少一个第一层（101），这是作用于半导体元件上从外部介质，其中所述第一层被设置在至少部分地在第一和第二电极之间进行访问。为了特别是减少，提供了根据本发明的半导体装置的制造成本，所述第一层具有的孔（301）到其中的介质是至少部分地通过。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式