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1. 发明申请

WO2004028958A3 ELECTRICAL AND/OR MICROMECHANICAL COMPONENT AND METHOD 审中-公开
标题翻译：电气和/或机械科技组件和方法
公开(公告)号：WO2004028958A3
公开(公告)日：2004-07-22
申请号：PCT/DE0300705
申请日：2003-03-06
申请人： BOSCH GMBH ROBERT , HAAG FRIEDER , LANG MARKUS , HENNING FRANK
发明人： HAAG FRIEDER , LANG MARKUS , HENNING FRANK
IPC分类号： B81B7/00 , H01L23/31
CPC分类号： B81B7/0058 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed are an electronic and/or micromechanical component and a method for producing such a component, in which a layer (31) having a regular thickness is applied to a surface (120).
摘要翻译：它提出了一种电子和/或微机械装置和用于制造这样的部件，其中一个层（31）施加到表面（120），其中所述层（31）具有均匀的厚度的方法。

2. 发明申请

WO0146066A3 SENSOR WITH AT LEAST ONE MICROMECHANICAL STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：根据上述制造至少一个微机械结构与过程传感器
公开(公告)号：WO0146066A3
公开(公告)日：2002-04-04
申请号：PCT/DE0004454
申请日：2000-12-14
申请人： BOSCH GMBH ROBERT , REICHENBACH FRANK , PINTER STEFAN , HENNING FRANK , ARTMANN HANS , BAUMANN HELMUT , LAERMER FRANZ , OFFENBERG MICHAEL , BISCHOPINK GEORG
发明人： REICHENBACH FRANK , PINTER STEFAN , HENNING FRANK , ARTMANN HANS , BAUMANN HELMUT , LAERMER FRANZ , OFFENBERG MICHAEL , BISCHOPINK GEORG
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , G01P15/08
CPC分类号： B81C1/00293 , B81B2201/0228 , B81B2207/095 , B81C2201/0115 , B81C2203/0136 , B81C2203/0145
摘要： According to the invention, the cover (13) of the inventive sensor is made of a first layer (32) (deposition layer) which is transparent to an etching to reaction products and has a hermetically sealed second layer (34) (sealing layer) located thereover. In the method according to the invention, at least the sensor chamber (28) is located in the base wafer (11) is filled with an oxide (30), in particular CVD oxide or porous oxide after a structure (26) has been established. The sensor chamber (28)is covered with a first layer (32) in particular a polysilicon layer which is or has been made transparent to the etching medium and the reaction products (deposition layer). The oxide (30) in the sensor chamber (28) is removed by an etching medium which etches through the deposition layer (32). A second layer (34) (sealing layer) is subsequently applied to the deposition layer (32) which hermetically seals the sensor chamber (28). Said second layer is in particular made of a metal or an insulator.
摘要翻译：据设想，在本发明的传感器，由透明的盖（13）的蚀刻介质和反应产物中的第一层（32）（分离层）和上覆的气密地密封的第二层（34）（密封层），并且本发明的方法至少在基底晶片（11）建立结构之后（26），现有的传感器腔室（28）填充有具有氧化物（30），特别是CVD氧化物或多孔氧化物，所述传感器室（28），一个用于蚀刻介质和反应产物透明或随后作出透明的第一层（32）（分离层），特别是多晶硅，被覆盖，这是在所述传感器室（28）通过所述分离层（32）的氧化物（30）通过蚀刻介质和随后的第二层（去世由金属或绝缘体（在沉积层32上）的34）（密封层），特别是施加到浅草 rraum（28）气密地密封。

3. 发明申请

WO2009149979A3 PRODUCTION METHOD FOR A MICROMECHANICAL COMPONENT CONSISTING OF A CARRIER AND A SEMICONDUCTOR CHIP 审中-公开
标题翻译： HERSTELLUNNGSVERFAHREN用于微机械组件由载体和半导体芯片的
公开(公告)号：WO2009149979A3
公开(公告)日：2010-09-23
申请号：PCT/EP2009054695
申请日：2009-04-21
申请人： BOSCH GMBH ROBERT , BENZEL HUBERT , HENNING FRANK , SCHARPING ARMIN , SCHELLING CHRISTOPH
发明人： BENZEL HUBERT , HENNING FRANK , SCHARPING ARMIN , SCHELLING CHRISTOPH
IPC分类号： B81C3/00 , G01L9/00
CPC分类号： B81C3/001 , B81B2201/0264 , B81C2201/019 , G01L9/0055
摘要： The invention relates to a production method for a micromechanical component. The method has the following steps: provision of a first composite (W1; W1'; W1''; W1''') of a plurality of semiconductor chips (SC1, SC2, SC3; SC2''; SC1''', SC2'''; SC3'''); provision of a second composite (W2; W2') of a corresponding plurality of carrier substrates (SS1, SS2, SS3; SS1''', SS2''', SS3'''); printing of a structured adhesion promoter layer (SG) onto the first front surface (V1; V1'; V1''; V1''') and/or the second front surface (V2; V2'''), said layer having degassing channels (SK, KG); connection of the first front surface (V1; V1'; V1''; V1''') to the second front surface (V2; V2''') by means of the structured adhesion promoter layer (SG) by the application of pressure, in such a way that each semiconductor chip (SC1, SC2,SC3; SC2''; SC1''', SC2'''; SC3''') is connected to a corresponding carrier substrate (SS1, SS2, SS3; SS1''',SS2''', SS3''') corresponding to a respective micromechanical component, permitting a gas in the ambient atmosphere to escape to the exterior through the degassing channels (SK, KG).
摘要翻译：本发明提供了一种用于制造微机械部件的方法。该方法包括以下步骤：提供一个第一网络（W1，W1 'W1' '; W1' ''） “; '”，SC2' SC1” 的多个半导体芯片（SC1，SC2，SC3，SC2的'; SC3 “ ';提供第二复合物（W2）W2' 的相应的多个载体衬底（SS1，SS2，SS3的）; SS1 '' 'SS2' ''，SS3 '''）;（印刷图案化的粘合促进层SG）上包括其中Ausgasungskanäle（SK，KG）（V1，V1 'V1'，V1' ''），所述第一前表面（ '' 和/或第二前表面V2 V2“）;将所述第一前表面（ V1; V1 'V1'，V1' ''）和第二前表面（V2; V2 ''“）通过所述结构化粘合剂层SG）（下施加压力，使得每个半导体芯片（SC1，SC2，SC3; SC2“; SC1 '' 'SC2' '' - SC3 '' '）（与相应的载体衬底SS1，SS2，SS3; SS1' ''，SS2 '''，SS3' ''）对应于相应的mikromec hanischen装置连接，其特征在于，一个气体通过Ausgasungskanäle（SK，KG）周围大气可以逸出到外部。

4. 发明申请

WO02082096A3 SENSOR 审中-公开
公开(公告)号：WO02082096A3
公开(公告)日：2003-05-08
申请号：PCT/DE0200621
申请日：2002-02-20
申请人： BOSCH GMBH ROBERT , FRANZ JOCHEN , KOHN OLIVER , HENNING FRANK , MAUTE MATTHIAS
发明人： FRANZ JOCHEN , KOHN OLIVER , HENNING FRANK , MAUTE MATTHIAS
IPC分类号： G01P15/02 , B81B3/00 , G01P15/08 , G01P15/125 , H01L29/84 , B81B7/00
CPC分类号： B81B3/0051 , B81B2201/0235 , B81B2203/051 , G01P15/08 , G01P15/125 , G01P2015/0817 , G01P2015/0831
摘要： The invention relates to a sensor whose sensor structure is realized in a micromechanical component and which has parts that can move in relation to the stationary substrate of the component. The sensor comprises at the least the following: a self-supporting seismic mass (1); a spring arrangement with at least one spring (2), whereby the seismic mass (1) is joined to the substrate via the spring arrangement; an overload protection for limiting the displacement of the spring arrangement or of the seismic mass (1) in at least one direction, and; means for detecting the displacements of the spring arrangement or of the seismic mass (1). According to the invention, constructive measures with which the striking forces can be reduced in order to prevent shell blowouts and thus resulting pre-damages to the sensor structure as well as to prevent a formation of particles. To this end, the overload protection is provided in the form of at least one flat stop (3) for at least one moving part of the sensor structure. Alternatively or complementary thereto, the overload protection is provided in the form of at least one elastic stop (7) for at least one moving part of the sensor structure.
摘要翻译：用于传感器，其传感器结构在微机械部件和相对部件的固定基板包括移动部件，并且还包括至少实现：自支撑振动质量（1），具有至少一个弹簧（2）弹簧装置，其中，所述地震是质量（1）通过连接到衬底，用于限制所述弹簧装置的偏转和震动块（1）的过载的保护，在至少一个方向和弹簧组件用于感测所述弹簧装置的偏转和振动质量的（1）利用该止动力可以减小，从而防止贻贝暴发提出的结构措施引起了传感器结构的初始损伤和颗粒形成。为了这个目的，作为一个过载保护根据至少在传感器结构中的至少一个可移动部分的平面止动件（3）提供了本发明。或者或另外，作为过载保护根据至少一个弹性止动件（7），用于至少在传感器结构的可移动部分提供了本发明。

5. 发明申请

WO2009149979A2 PRODUCTION METHOD FOR A MICROMECHANICAL COMPONENT, CORRESPONDING COMPOSITE COMPONENT AND CORRESPONDING MICROMECHANICAL COMPONENT 审中-公开
标题翻译：对于微机械部件，这样的部件复合材料和相应的微机械结构制作工艺
公开(公告)号：WO2009149979A2
公开(公告)日：2009-12-17
申请号：PCT/EP2009054695
申请日：2009-04-21
申请人： BOSCH GMBH ROBERT , BENZEL HUBERT , HENNING FRANK , SCHARPING ARMIN , SCHELLING CHRISTOPH
发明人： BENZEL HUBERT , HENNING FRANK , SCHARPING ARMIN , SCHELLING CHRISTOPH
IPC分类号： B81C1/00
CPC分类号： B81C3/001 , B81B2201/0264 , B81C2201/019 , G01L9/0055
摘要： The invention relates to a production method for a micromechanical component, to a corresponding composite component and to a corresponding micromechanical component. The method has the following steps: provision of a first composite (W1; W1'; W1''; W1''') of a plurality of semiconductor chips (SC1, SC2, SC3; SC2''; SC1''', SC2'''; SC3'''), the first composite having a first front surface (V1; V1'; V1''; V1''') and a first rear surface (R1; R1'; R1''; R1'''); provision of a second composite (W2; W2') of a corresponding plurality of carrier substrates (SS1, SS2, SS3; SS1''', SS2''', SS3'''), the second composite having a second front surface (V2; V2''') and a second rear surface (R2; R2'''); printing of a structured adhesion promoter layer (SG) onto the first front surface (V1; V1'; V1''; V1''') and/or the second front surface (V2; V2'''), said layer having degassing channels (SK, KG); alignment of the first front surface (V1; V1'; V1''; V1''') and the second front surface (V2; V2''') corresponding to a plurality of micromechanical components, each having a semiconductor chip (SC1, SC2, SC3; SC2''; SC1''', SC2'''; SC3''') and a corresponding carrier substrate (SS1, SS2, SS3; SS1''', SS2''', SS3'''); connection of the first front surface (V1; V1'; V1''; V1''') and the second front surface (V2; V2''') by means of the structured adhesion promoter layer (SG) by the application of pressure, in such a way that each semiconductor chip (SC1, SC2,SC3; SC2''; SC1''', SC2'''; SC3''') is connected to a corresponding carrier substrate (SS1, SS2, SS3; SS1''',SS2''', SS3''') corresponding to a micromechanical component, permitting a gas in the ambient atmosphere to escape to the exterior through the degassing channels (SK, KG); and separation of the micromechanical components.
摘要翻译：本发明提供了一种用于微机械部件，相应的装置和相应的复合微机械部件的制造方法。该方法包括以下步骤：提供一个第一网络（W1，W1 'W1' '; W1' ''） '的多个半导体芯片（SC1，SC2，SC3，SC2的'; SC1 ''”，SC2' '' ; SC3 '' '），所述第一复合材料的第一前表面（V1，V1'; '; V1' V1 '' '）和第一后表面（R1; R1'，R1'，R1 ''“）包括：提供第二复合物; '（; ''，SS2 ''”，SS3' '' 的相应的多个载体基质SS1，SS2，SS3 SS1）的（W2 W2）'，其中所述第二化合物，第二前表面（V2; V2 '' '）和第二后表面（R2; R2' 包括 ''）; 印刷图案化的粘合促进层（SG）的第一前表面（ '; V1' V1 V1 'V1' ''）和/或第二前表面（V2; V2 '''），其Ausgasungskanäle（SK，KG）包括：对准第一前表面（“; V1” V1 V1“ V1' ‘’）;对应于多个微机械装置，每个具有一个半导体芯片（SC1，SC2，SC3和第二前表面（V2‘’” V2） ; '; SC3'; SC2 '' SC1 '' 'SC2' '' '）和对应的支撑基板（SS1，SS2，SS3; SS1' '' 有，连接 '）'，SS2 '''，SS3' 第一前表面（“; V1” V1 V1“ V1' ‘’）和第二前表面（V2; V2‘’”）在与压力，使得每一个半导体芯片的应用图案化的粘合促进层（SG）（SC1， SC2，SC3，SC2 ''; SC1 ''; SC3 '' '）与相应的载体基板（SS1，SS2，SS3，' 'SC2' '对应于SS1' '）'，SS2 '''，SS3' '' 被连接到相应的微型机械装置，其特征在于，一个气体通过Ausgasungskanäle（SK，KG）周围大气可以逸出到外部，和微机械部件的分离。

6. 发明申请

WO0150137A3 MICROMECHANICAL STRUCTURE, IN PARTICULAR FOR AN ACCELERATION SENSOR OR YAW RATE SENSOR AND A CORRESPONDING METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：微机械结构，特别是加速度传感器或旋转速率传感器及相应方法
公开(公告)号：WO0150137A3
公开(公告)日：2001-12-27
申请号：PCT/DE0004379
申请日：2000-12-09
申请人： BOSCH GMBH ROBERT , FRANZ JOCHEN , ILLING MATTHIAS , HENNING FRANK , FISCHER FRANK , HEIN PETER
发明人： FRANZ JOCHEN , ILLING MATTHIAS , HENNING FRANK , FISCHER FRANK , HEIN PETER
IPC分类号： B81B3/00 , B81C1/00 , G01C19/5755 , G01P15/08 , G01P15/125 , H01L29/84
CPC分类号： G01C19/5755 , G01P15/0802 , G01P15/125 , G01P2015/0831
摘要： The invention relates to a micromechanical structure and to a corresponding method for producing the same. The structure comprises a substrate (10) which has an anchoring element (20) and a flywheel (30) that is connected to the anchoring element (20) using a spiral spring device (40) in such a way that the flywheel (30) can be pivoted elastically out of its resting position. The flywheel (30) has intermediate gaps and is configured so that it can pivot, by the etching of an underlying sacrificial layer (50). The sacrificial layer (50) lies beneath the flywheel (30) in a first zone of a first etchable thickness (d1) and a second zone of a second etchable thickness (d1+d2+d3), whereby the second thickness (d1+d2+d3) is greater than the first (d1). The flywheel (30) is configured in the first zone in such a way that a maximum of two etching faces can meet during the etching process, thus limiting the deposits of etching residue.
摘要翻译：本发明提供一种微机械结构，以及一个相应的制造方法。该结构包括具有一锚定装置（20）的基板（10）; 且通过柔性弹簧装置（40）与所述锚定装置（20）连接的飞轮（30），以使飞轮质量（30）被弹性地从它的静止位置偏转。飞轮体（30）具有空隙，并且通过蚀刻下面的牺牲层（50）偏转的艺术品。所述牺牲层（50）是在位于存在于第一可蚀刻厚度（d1）的第一区域，和位于一个飞轮质量下（30），第二区域在第二可蚀刻厚度（下离心块（30）D1 + D2 + D3 ），其中所述第二厚度（D1 + D2 + D3）大于所述第一厚度（D1）大。飞轮体（30）在第一区域这样的方式，可以在为了限制蚀刻残余物的沉积在蚀刻期间满足最多只有两次蚀刻方面的构造。

7. 发明专利

DE10355038B4 Verfahren zur Beschichtung einer Oberfläche 未知
公开(公告)号：DE10355038B4
公开(公告)日：2022-09-08
申请号：DE10355038
申请日：2003-11-25
申请人： BOSCH GMBH ROBERT
发明人： HENNING FRANK , MÜLLER LUTZ , SÄTTLER MICHAEL
IPC分类号： C23C16/24 , C23C16/30 , C23C16/56
摘要： Verfahren zur Herstellung einer Schicht (140) auf einer Oberfläche (141), wobei die Schicht (140) antihaftende Eigenschaften aufweist und wobei die Oberfläche (141) in Form einer mikromechanischen Struktur ausgeführt ist und zur Beschichtung einem Silan ausgesetzt wird, dadurch gekennzeichnet, dass als Silan eine Verbindung oder eine Mischung von Verbindungen aus einer Gruppe von Verbindungen der allgemeinen FormelR1R2-SiX2, wobei X für Fluor, Brom, einen Alkoxyrest oder einen Acetoxyrest steht, R1ein unfluorierter Alkylrest mit mehr als 2 Kohlenstoffatomen, ein Allylrest oder ein mindestens einen Aromaten beinhaltender Rest ist und R2ein unfluorierter Alkyl-oder ein Allylrest ist, oderR1-SiX3, wobei X für Chlor steht und R1ein mindestens einen Aromaten beinhaltender Rest oder ein chlorierter Alkylrest ist, oderR1R2-SiX2, wobei X für Chlor steht und R1ein mindestens einen Aromaten beinhaltender Rest oder ein chlorierter Alkylrest ist und R2ein Alkyl-oder ein Allylrest ist oderR1R2-SiX2, wobei X für Fluor, Brom, einen Alkoxyrest mit mehr als 2 Kohlenstoffatomen oder einen Acetoxyrest steht und wobei R1kein fluorierter Alkylrest, kein Methylrest und kein Phenylrest ist und R2ein unfluorierter Alkyl- oder ein Allylrest ist oderR1R2R3-SiX, wobei X für Fluor, Brom, lod, einen Alkoxyrest oder einen Acetoxyrest steht und R1, R2, R3kein Wasserstoff und kein fluorierter Alkylrest ist, oderdass als Silan eine Verbindung oder eine Mischung von Verbindungen aus der Gruppe13-(Trichlorsilylmethyl)-Heptacosan, 11-(Trichlorsilylmethyl)-Heptacosan, Hexadecyltrichlorsilan, Methyltriethoxysilan, Methyltriacetoxysilan, Isopropyltrichlorsilan, Dimethyldichlorsilan, silylierte Amine, phenylgruppenhaltige Silazane, 1,3-Divinyltetramethyldisilazan, 1,1,3,3,5,5 Hexamethylcyclotrisilazan, , Trimethylpentaphenyltrisiloxane DC 705, N,O-Bis(trimethylsilyl)acetamide, N,O-Bis(trimethylsilyl)trifluoracetamid, N-Methyl-Ntrimethylsilyltrifluoracetamid, N,O-Bis(trimethylsilyl)carbamat,verwendet wird, wobei das Silan mittels eines CVD-Verfahrens aus der Gasphase abgeschieden wird, in einem separaten Schritt überschüssiges Silan durch Abpumpen entfernt wird und nachfolgend das abgeschiedene Silan durch Zugabe von Wasserdampf vollständig hydrolisiert wird.

8. 发明专利

DE102004032984A1 未知
公开(公告)号：DE102004032984A1
公开(公告)日：2006-01-26
申请号：DE102004032984
申请日：2004-07-08
申请人： BOSCH GMBH ROBERT
发明人： HENN RALF , SCHOLZEN HOLGER , HENNING FRANK
IPC分类号： B29C45/00 , G01L9/00 , H01L23/48 , H01R4/48 , H01R13/24
摘要： A sensor system includes a sensor element and a body. A number of electrical contact points with which contact may be created via electrical contact elements are provided on one side of the sensor element. Electrically conductive insertion parts are introduced into the body made of a non-conductive material and create a contact with the electrical contact points of the sensor element when the sensor element and the body are mechanically joined together.

9. 发明专利

DE19961578A1 Sensor comprises a micromechanical structure based on silicon integrated in the sensor chamber of a base wafer and a cover made of a transparent deposition layer and a sealing layer 未知
公开(公告)号：DE19961578A1
公开(公告)日：2001-06-28
申请号：DE19961578
申请日：1999-12-21
申请人： BOSCH GMBH ROBERT
发明人： REICHENBACH FRANK , PINTER STEFAN , HENNING FRANK , ARTMANN HANS , BAUMANN HELMUT , LAERMER FRANZ , OFFENBERG MICHAEL , BISCHOPINK GEORG
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00
摘要： Sensor comprises a micromechanical structure based on silicon integrated in the sensor chamber of a base wafer and a cover (13) made of a first layer (32) permeable to an etching medium and reaction products and a hermetically sealed second layer (34). The cover covers the base wafer in the region of the sensor chamber. An Independent claim is also included for a process for the production of a sensor, comprising: filling the sensor chamber (28) in the base wafer with an oxide, especially CVD oxide or porous oxide; covering the sensor chamber (28) with a transparent deposition layer (32); removing the oxide in the sensor chamber using an etching medium; and applying a sealing layer (34) made of metal or insulator to hermetically seal the sensor chamber. Preferred Features: The deposition layer is made of polycrystalline silicon. The sealing layer is an insulator made of silicon nitride or silicon oxide, or aluminum.

10. 发明专利

DE102010002274A1 Vorrichtung zur Messung von Torsionen, Biegungen und dergleichen sowie entsprechendes Herstellungsverfahren 未知
公开(公告)号：DE102010002274A1
公开(公告)日：2011-08-25
申请号：DE102010002274
申请日：2010-02-24
申请人： BOSCH GMBH ROBERT
发明人： HUELS JAN , HENNING FRANK , FREY WILHELM
IPC分类号： G01L1/22 , G01B7/16 , G01L1/16 , G01L3/10 , G01L9/04
摘要： Die Erfindung betrifft eine Vorrichtung zur Messung von Torsionen, Biegungen und dergleichen von einem Bauteil, umfassend ein insbesondere metallisches Substrat, eine Isolationsschicht und eine Sensierschicht in Form einer Messstreifenanordnung wobei die Vorrichtung an dem Bauteil mittels einer festen Verbindung festlegbar ist.

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