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    • 10. 发明专利
    • Lithographic apparatus and device manufacturing method
    • LITHOGRAPHIC装置和装置制造方法
    • JP2010123949A
    • 2010-06-03
    • JP2009257618
    • 2009-11-11
    • Asml Netherlands Bvエーエスエムエル ネザーランズ ビー.ブイ.
    • BIJNEN FRANCISCUS GODEFRIDUS CASPERROIJERS JOZEF CORNELIS ANTONIUSWARNAAR PATRICKVAN KEMENADE MARCTOLSMA HOITE PIETER THEODOOR
    • H01L21/027G03F7/20
    • G03F9/7049G03F9/7003G03F9/7076G03F9/7084
    • PROBLEM TO BE SOLVED: To provide a lithographic apparatus having excellent alignment reproducibility. SOLUTION: A method for manufacturing the device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective corresponding exposure fields; determining an absolute position of each exposure field from the alignment information for the respective corresponding exposure fields; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供具有优异的取向再现性的光刻设备。 解决方案:一种制造该器件的方法,包括提供衬底,所述衬底包括多个曝光场,每个曝光场包括一个或多个目标部分和至少一个标记结构,所述标记结构被布置为位置标记 曝光场; 扫描和测量每个曝光场的标记以获得各个相应的曝光场的对准信息; 从各个对应的曝光场的对准信息确定每个曝光场的绝对位置; 通过使用关于相对于彼此的曝光场和至少一个其他曝光场的相对参数的附加信息来确定每个曝光场相对于至少一个其它曝光场的相对位置; 以及将所述绝对位置和所确定的相对位置组合为所述多个曝光场中的每一个的改进的绝对位置。 版权所有(C)2010,JPO&INPIT