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1. 发明申请

US20030138560A1 Apparatus and method for heating substrates 失效
标题翻译：用于加热基材的装置和方法
公开(公告)号：US20030138560A1
公开(公告)日：2003-07-24
申请号：US10278615
申请日：2002-10-22
申请人： Applied Materials, Inc.
发明人： Jun Zhao , David Quach , Timothy Weidman , Rick J. Roberts , Farhad Moghadam , Dan Maydan
IPC分类号： B05D005/12 , C23C016/00 , B05D003/02
CPC分类号： H01L21/67109 , Y10S414/139
摘要： An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.
摘要翻译：公开了一种处理衬底的设备。在一个实施例中，该装置包括外壳和壳体中的多个堆叠的电池结构。致动器适于在堆叠的电池结构中的衬底被加热的同时将多个堆叠的电池结构移动到壳体内部。

2. 发明申请

US20030129306A1 Chemical vapor deposition of ruthenium films for metal electrode applications 审中-公开
公开(公告)号：US20030129306A1
公开(公告)日：2003-07-10
申请号：US10193371
申请日：2002-07-10
申请人： Applied Materials, Inc.
发明人： Christopher P. Wade , Elaine Pao , Yaxin Wang , Jun Zhao
IPC分类号： C23C016/00
CPC分类号： C23C16/18
摘要： The present invention provides a method of depositing ruthenium films on a substrate via liquid source chemical vapor deposition wherein the source material is liquid at room temperature and utilizing process conditions such that deposition of the ruthenium films occurs at a temperature in the kinetic-limited temperature regime. Also provided is a method of depositing a thin ruthenium film on a substrate by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl) ruthenium by vaporizing the bis-(ethylcyclopentadienyl) ruthenium at a vaporization temperature of about 100-300null C. to form a CVD source material gas, providing an oxygen source reactant gas and forming a thin ruthenium film on a substrate in a reaction chamber using the CVD source material gas and the oxygen source reactant gas at a substrate temperature of about 100-500null C.

3. 发明申请

US20020146513A1 CVD RUTHENIUM SEED FOR CVD RUTHENIUM DEPOSITION 失效
标题翻译： CVD RUTHENIUM种子用于CVD金刚石沉积
公开(公告)号：US20020146513A1
公开(公告)日：2002-10-10
申请号：US09827878
申请日：2001-04-05
申请人： Applied Materials, Inc.
发明人： Xiaoliang Jin , Christopher P. Wade , Xianzhi Tao , Elaine Pao , Yaxin Wang , Jun Zhao
IPC分类号： C23C016/00
CPC分类号： C23C16/40 , C08F14/06 , C23C16/0281 , C23C16/18 , C23C16/56
摘要： The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.
摘要翻译：本发明提供了在基材上形成钌籽晶层的方法，包括将含钌化合物引入CVD装置的步骤; 将氧气引入CVD装置中; 在处理室中保持富氧环境以初始形成氧化钌种子层; 汽化含钌化合物; 通过化学气相沉积将氧化钌种子层沉积到衬底上; 并在形成钌种子层的气体环境中退火沉积的氧化钌种子层。还提供了通过金属有机化学气相沉积在金属钌晶种层上使用金属有机前体沉积钌金属薄膜的方法。

4. 发明申请

US20040018070A1 Compact and high throughput semiconductor fabrication system 审中-公开
标题翻译：紧凑且高通量的半导体制造系统
公开(公告)号：US20040018070A1
公开(公告)日：2004-01-29
申请号：US10206724
申请日：2002-07-25
申请人： APPLIED MATERIALS, INC.
发明人： Jun Zhao , Satish Sundar , Vinay K. Shah , Hari K. Ponnekanti , Mario Dave Silvetti , Michael Robert Rice , Avi Tepman , Farhad K. Moghadam
IPC分类号： B65G049/07
CPC分类号： H01L21/67742
摘要： Embodiments of the present invention are directed to substrate processing systems having substrate transferring mechanisms that are compact, have small footprints, and provide fast and efficient substrate transfer to achieve high throughput. In specific embodiments, a unit slab construction is used for the chambers around the substrate transferring mechanism, enabling efficient system construction with improved alignment and at a lower cost. The chambers may share gas, pump, and other utilizes. In one embodiment, an apparatus for processing substrates includes at least three robot blades each configured to support a substrate. A robot is coupled with the at least three robot blades to simultaneously move the robot blades between at least three chambers and simultaneously transfer each of the substrates supported on the robot blades from one chamber to another chamber.
摘要翻译：本发明的实施例涉及具有紧凑的基板转移机构，具有小的占地面积并且提供快速和有效的基板转移以实现高产量的基板处理系统。在具体实施例中，单元板结构用于基板传送机构周围的室，使得能够以更低的成本改进对准和高效的系统构造。这些室可以共享气体，泵和其他利用。在一个实施例中，用于处理衬底的装置包括至少三个机器人刀片，每个机器人刀片被配置为支撑衬底。机器人与所述至少三个机器人刀片耦合以同时在至少三个腔室之间移动所述机器人刀片，并且同时将支撑在所述机器人刀片上的每个基底从一个腔室传送到另一个腔室。

5. 发明申请

US20030106490A1 Apparatus and method for fast-cycle atomic layer deposition 有权
标题翻译：用于快速循环原子层沉积的装置和方法
公开(公告)号：US20030106490A1
公开(公告)日：2003-06-12
申请号：US10215068
申请日：2002-08-07
申请人： Applied Materials, Inc.
发明人： Ravi Jallepally , Shih-Hung Li , Alain Duboust , Jun Zhao , Liang-Yuh Chen , Daniel A. Carl
IPC分类号： C30B023/00 , C30B025/00 , C30B028/12 , C30B028/14
CPC分类号： C30B25/14 , C23C16/45521 , C23C16/45544 , C23C16/45565 , Y10T117/1008
摘要： Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.
摘要翻译：用于通过原子层沉积沉积层的方法和装置。在基板支撑件和室之间建立虚拟浴帘，以使反应物分布的体积最小化。可以使用喷头来使衬底更靠近放置，进一步减小反应体积。零静态空间体积阀具有紧密放置在室盖和快速循环时间，也提高了工艺的循环时间。

6. 发明申请

US20040266123A1 Electron beam treatment of SixNy films 审中-公开
标题翻译：电子束处理SixNy膜
公开(公告)号：US20040266123A1
公开(公告)日：2004-12-30
申请号：US10824313
申请日：2004-04-13
申请人： Applied Materials, Inc.
发明人： Zhenjiang Cui , Jun Zhao , Rick J. Roberts , Shulin Wang , Errol A. C. Sanchez , Aihua Chen
IPC分类号： H01L021/336 , H01L021/324
CPC分类号： C23C16/26 , B05D1/60 , B05D3/068 , C23C16/401 , C23C16/56 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02351 , H01L21/31058 , H01L21/3122 , H01L21/3125 , H01L21/76807
摘要： One embodiment of the present invention is a method for treating silicon nitride (SixNy) films that includes electron beam treating the silicon nitride film.
摘要翻译：本发明的一个实施方案是一种处理包括电子束处理氮化硅膜的氮化硅（SixNy）膜的方法。

7. 发明申请

US20040224496A1 Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques 失效
公开(公告)号：US20040224496A1
公开(公告)日：2004-11-11
申请号：US10730193
申请日：2003-12-05
申请人： Applied Materials, Inc.
发明人： Zhenjiang Cui , Rick J. Roberts , Michael S. Cox , Jun Zhao
IPC分类号： H01L021/4763 , H01L021/31 , H01L021/469
CPC分类号： H01L21/76229
摘要： A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; exposing the layer of spin-on glass material to a solvent; curing the layer of spin-on glass material; and depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.

8. 发明申请

US20040224479A1 Multistep cure technique for spin-on-glass films 失效
标题翻译：旋涂玻璃膜的多步法固化技术
公开(公告)号：US20040224479A1
公开(公告)日：2004-11-11
申请号：US10430942
申请日：2003-05-06
申请人： Applied Materials, Inc.
发明人： Zhenjiang Cui , Rick J. Roberts , Michael S. Cox , Jun Zhao , Khaled Elsheref , Alexandros T. Demos
IPC分类号： H01L021/76
CPC分类号： H01L21/76229 , H01L21/3105
摘要： A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.
摘要翻译：一种填充蚀刻在衬底中的多个沟槽的方法。在一个实施例中，该方法包括在衬底上沉积旋涂玻璃材料层并进入多个沟槽; 通过在第一温度下将自旋玻璃材料暴露于电子束辐射第一周期，随后将旋涂玻璃材料暴露于第二温度下的电子束第二周期来固化旋涂玻璃材料层，其中第二温度大于第一温度。该方法的结论是通过使用化学气相沉积技术在固化的旋涂玻璃层上沉积二氧化硅玻璃层。

9. 发明申请

US20040020601A1 Process and an integrated tool for low k dielectric deposition including a pecvd capping module 审中-公开
标题翻译：工艺和用于低k电介质沉积的集成工具，包括pecvd封盖模块
公开(公告)号：US20040020601A1
公开(公告)日：2004-02-05
申请号：US10631303
申请日：2003-07-29
申请人： Applied Materials, Inc.
发明人： Jun Zhao , Farhad Moghadam , Tim Weidman , Rick J. Roberts , Hari Ponnekanti , Chau T. Nguyen , Satish Sundar , David H. Quach , Sasson Somekh
IPC分类号： H01L021/306 , C23C016/00
CPC分类号： H01L21/67161 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/31695 , H01L21/67167 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67742 , H01L21/76807
摘要： A series of modular apparatuses for processing substrates using a unique combinations of a substrate coating subsystem, a substrate curing subsystem and a PECVD-based capping subsystem. The individual subsystems are capable of being combined with one another for creating unique integrated substrate processing apparatuses that enable combined processing by the coating, curing and capping subsystems in an integrated and controlled environment, thus enabling the processing of substrates in an efficient manner, while minimizing the exposure of the substrates to an external environment and minimizing the condensation of vapors while the substrate is processed by the cure and capping subsystems.
摘要翻译：一系列用于使用基板涂层子系统，基板固化子系统和基于PECVD的封盖子系统的独特组合来处理衬底的模块化装置。各个子系统能够彼此组合，用于创建独特的集成基板处理设备，其能够通过在集成和受控环境中的涂层，固化和封盖子系统进行组合处理，从而能够以有效的方式处理基板，同时最小化衬底暴露于外部环境，并且在通过固化和封盖子系统处理衬底的同时使蒸气冷凝最小化。

10. 发明申请

US20020146915A1 Process for depositing layers on a semiconductor wafer 有权
标题翻译：用于在半导体晶片上沉积层的工艺
公开(公告)号：US20020146915A1
公开(公告)日：2002-10-10
申请号：US09826711
申请日：2001-04-04
申请人： Applied Materials, Inc.
发明人： Pravin Narwankar , Jun Zhao
IPC分类号： H01L021/31 , H01L021/469
CPC分类号： H01L21/02183 , H01L21/02205 , H01L21/02271 , H01L21/31604 , H01L21/31637 , H01L21/76843 , H01L21/76856 , H01L21/7687 , H01L28/40 , H01L28/60
摘要： Processes which use the same precursor material for forming a metal electrode deposition as for forming a dielectric layer deposition. The layers may be successively formed in the same chamber, or may be formed in like chambers located in a processing system.
摘要翻译：使用相同的前体材料形成用于形成电介质层沉积的金属电极沉积的方法。这些层可以相继地形成在相同的室中，或者可以形成在位于处理系统中的类似的室中。

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