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1. 发明公开

EP1397833A2 SYSTEM AND METHOD TO FORM A COMPOSITE FILM STACK UTILIZING SEQUENTIAL DEPOSITION TECHNIQUES 审中-公开
标题翻译：装置和方法，生产复合层堆叠使用顺序沉积
公开(公告)号：EP1397833A2
公开(公告)日：2004-03-17
申请号：EP02742217.9
申请日：2002-06-20
申请人： APPLIED MATERIALS, INC.
发明人： MAK, Alfred W. , CHANG, Mei , BYUN, Jeong Soo , CHUNG, Hua , SINHA, Ashok , KORI, Moris
IPC分类号： H01L21/768 , H01L21/285
CPC分类号： H01L21/76846 , H01L21/28562
摘要： A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer (58). Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer (60) adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.

2. 发明公开

EP1088330A1 CVD APPARATUS AND PROCESS FOR DEPOSITING TITANIUM FILMS 审中-公开
标题翻译： CVD装置及方法分离钛薄膜
公开(公告)号：EP1088330A1
公开(公告)日：2001-04-04
申请号：EP99918911.1
申请日：1999-04-29
申请人： Applied Materials, Inc.
发明人： CHANG, Mei
IPC分类号： H01J37/32 , C23C16/44 , C23C16/50
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455 , C23C16/45561 , C23C16/45576 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/3299
摘要： A method and apparatus for depositing a titanium containing layer on a semiconductor substrate employing high density plasma processing techniques. The titanium source includes a TiCl4 gas (96a) which is flowed into a process chamber along with an inert gas source (98a), such as argon and a flow of hydrogen gas. A plasma is present in the process chamber where the semiconductor substrate is situated. The apparatus includes a dome-shaped cover which forms part of the process chamber. The cover includes an aperture (96) centrally disposed therein and is adapted to produce a flow of TiCl4 gas that is directed substantially transverse to the semiconductor substrate, with a portion of the flow of hydrogen gas (98a) and the inert gas source positioned between the cover and the flow of TiCl4 gas.

3. 发明公开

EP1057205A1 RF POWERED PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION REACTOR AND METHODS OF EFFECTING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 有权
标题翻译：反应器的无线电频率运行等离子体增强化学气相沉积方法实现，分离的
公开(公告)号：EP1057205A1
公开(公告)日：2000-12-06
申请号：EP99908180.5
申请日：1999-02-16
申请人： MICRON TECHNOLOGY, INC. , Applied Materials, Inc.
发明人： SHARAN, Sujit , SANDHU, Gurtej, S. , SMITH, Paul , CHANG, Mei
IPC分类号： H01J37/32
CPC分类号： H01J37/32174 , C23C16/505 , H01J37/32082 , H01J37/321 , Y10S438/961
摘要： Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In accordance with a preferred implementation, a reaction chamber includes first and second electrodes (22, 26) operably associated therewith. A single RF power generator is connected to an RF power splitter (16) wich splits the RF power and applies the split power to both the first and second electrodes. Preferably, power which is applied to both electrodes is in accordance with a power ratio as between electrodes which is other than a 1:1 ratio. In accordance with one preferred aspect, the reaction chamber comprises part of a parallel plate PECVD system. In accordance with another preferred aspect, the reaction chamber comprises part of an inductive coil PECVD system. The power ratio is preferably adjustable and can be varied. One manner of effecting a power ratio adjustment is to vary respective electrode surface areas. Another manner of effecting the adjustment is to provide a power splitter which enables the output power thereof to be varied. PECVD processing methods are described as well.

4. 发明公开

EP4133120A1 APPARATUSES AND METHODS OF PROTECTING NICKEL AND NICKEL CONTAINING COMPONENTS WITH THIN FILMS 审中-实审
公开(公告)号：EP4133120A1
公开(公告)日：2023-02-15
申请号：EP21784913.2
申请日：2021-04-08
申请人： Applied Materials, Inc.
发明人： LEI, Pingyan , WU, Dien-Yeh , HE, Xiao Ming , SUN, Jennifer Y. , ZHOU, Lei , KURATOMI, Takashi , GELATOS, Avgerinos V. , CHANG, Mei , MARCUS, Steven D.
IPC分类号： C23C16/455 , C23C16/40 , H01L21/28

5. 发明公开

EP3589776A1 APPARATUS FOR INCREASING FLUX FROM AN AMPOULE 审中-实审
公开(公告)号：EP3589776A1
公开(公告)日：2020-01-08
申请号：EP18760987.0
申请日：2018-03-02
申请人： Applied Materials, Inc.
发明人： CHOI, Kenric , YUAN, Xiaoxiong , YAO, Daping , CHANG, Mei
IPC分类号： C23C16/448 , C23C16/455 , C23C16/18

6. 发明公开

EP1636400A1 METHOD AND APPARATUS FOR GENERATING A PRECURSOR FOR A SEMICONDUCTOR PROCESSING SYSTEM 审中-公开
标题翻译： VEFAHREN和装置，产生中间物质用于半导体处理系统
公开(公告)号：EP1636400A1
公开(公告)日：2006-03-22
申请号：EP04753532.3
申请日：2004-05-27
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , KU, Vincent W. , CHUNG, Hua , MARCADAL, Christophe , GANGULI, Seshadri , LIN, Jenny , WU, Dien-Yeh , OUYE, Alan , CHANG, Mei
IPC分类号： C23C16/44 , C23C16/448 , H01L21/768
CPC分类号： C23C16/45525 , C23C16/18 , C23C16/34 , C23C16/4481 , C23C16/4487 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.

7. 发明公开

EP1444380A2 GAS DELIVERY APPARATUS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：天然气饲料分离原子层
公开(公告)号：EP1444380A2
公开(公告)日：2004-08-11
申请号：EP02792211.1
申请日：2002-10-25
申请人： Applied Materials, Inc.
发明人： CHEN, Ling , KU, Vincent , WU, Dien-Yeh , CHUNG, Hua , OUYE, Alan , NAKASHIMA, Norman , CHANG, Mei
IPC分类号： C23C16/455
CPC分类号： H01L21/76843 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562
摘要： An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.

8. 发明公开

EP1568797A2 In-situ dry clean chamber for front end of line fabrication 有权
标题翻译：原位Kam mer on on on on on on on。。。。。。。。。。。。。。。。。。。
公开(公告)号：EP1568797A2
公开(公告)日：2005-08-31
申请号：EP05251143.3
申请日：2005-02-25
申请人： APPLIED MATERIALS, INC.
发明人： KAO, Chien-Teh , CHOU, Jing-Pei (Connie) , LAI, Chiukin (Steven) , UMOTOY, Sal , HUSTON, Joel M. , TRINH, Son , CHANG, Mei , YUAN, Xiaoxiong (John) , CHANG, Yu , LU, Xinliang , WANG, Wie W. , PHAN, See-Eng
IPC分类号： C23C16/02 , C23C16/54 , H01L21/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the chamber (100) comprises a chamber body (112) and a support assembly (300) at least partially disposed within the chamber body and adapted to support a substrate thereon. The support assembly includes one or more fluid channels (360) at least partially formed therein and capable of cooling the substrate. The chamber further comprises a lid assembly (200) disposed on an upper surface of the chamber body. The lid assembly includes a first electrode (240) and a second electrode (220) which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate.
摘要翻译：提供了一种从衬底表面去除天然氧化物的方法和设备。在一个方面，腔室（100）包括室主体（112）和至少部分地设置在腔室主体内并适于在其上支撑衬底的支撑组件（300）。支撑组件包括至少部分地形成在其中并能够冷却基底的一个或多个流体通道（360）。腔室还包括设置在腔室主体的上表面上的盖组件（200）。盖组件包括在其间限定等离子体腔的第一电极（240）和第二电极（220），其中第二电极适于连接地加热衬底。

9. 发明公开

EP1118105A1 METHOD FOR CLEANING A PROCESS CHAMBER 审中-公开
标题翻译：清理方法处理室
公开(公告)号：EP1118105A1
公开(公告)日：2001-07-25
申请号：EP99948246.6
申请日：1999-09-22
申请人： Applied Materials, Inc.
发明人： VASUDEV, Anand , ITOH, Toshio , SRINIVAS, Ramanujapuram, A. , WU, Frederick , WU, Li , BOYLE, Brian , CHANG, Mei
IPC分类号： H01L21/00
CPC分类号： H01L21/67028 , Y10S438/905 , Y10S438/906
摘要： A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.

10. 发明公开

EP0746874A1 CHEMICAL VAPOR DEPOSITION CHAMBER 失效
标题翻译：化学气相沉积室
公开(公告)号：EP0746874A1
公开(公告)日：1996-12-11
申请号：EP95911831.0
申请日：1995-02-21
申请人： APPLIED MATERIALS, INC.
发明人： SINHA, Ashok , CHANG, Mei , PERLOV, Ilya , LITTAU, Karl , MORRISON, Alan , LEI, Lawrence, Chung-Lai
IPC分类号： C23C16 , H01L21
CPC分类号： C23C16/45521 , C23C16/4583 , C23C16/4585
摘要： A chemical vapor deposition chamber (10) includes a substrate support member (18) positionable therein to receive a substrate (24) thereon for processing. The support member (18) is positioned in the chamber (10) by a moveable stem (20) which extends through a sealed aperture (100) in the base of the chamber (10). To reduce heat transfer from the stem (20) outwardly of the chamber, the stem (20) includes a heat choke portion (44). To ensure that the support member (18) does not droop or sag under the high temperature conditions present in the chamber (10), a secondary plate (91) having high thermal resistance is maintained against the non-substrate receiving side of the support member (18). The use of the secondary plate (91) enables the use of highly thermally conductive, but low thermal strength, materials for the support member (18). The chamber (10) also includes a detection system for detecting the presence of mis-aligned, cracked or warped substrates (24) in the chamber (10). The support member (18) preferably incudes a plurality of vacuum grooves (77, 78) therein, which are maintained at a vacuum pressure to firmly adhere the substrate (24) to the support member (18) during processing. If the vacuum is not maintainable in the grooves (77, 78), this is indicative of a cracked, mis-aligned or warped substrate (77, 78). If this condition occurs, a controller shuts down the chamber and indicates the presence of a cracked, warped or mis-aligned substrate (24). The chamber also provides for edge protection of the substrates (24) as they are processed in the chamber (10). This is provided by creating a purge gas channel (220) about the perimeter of the substrate (24) and aligning the edge of the substrate (24) such that a purge gas gap is provided about the perimeter of the substrate edge.
摘要翻译：化学气相沉积室（10）包括可定位在其中以在其上接收基板（24）以进行处理的基板支撑构件（18）。支撑构件（18）通过延伸穿过腔室（10）的基部中的密封孔（100）的可动杆（20）定位在腔室（10）中。为了减少从室（20）向室外传递的热量，杆（20）包括热扼流部分（44）。为了确保支撑构件18在腔室10中存在的高温条件下不下垂或下垂，具有高热阻的第二板91维持在支撑构件的非基板接收侧上（18）。使用第二板（91）能够为支撑构件（18）使用高导热性但低热强度的材料。腔室（10）还包括检测系统，用于检测腔室（10）中存在错位，裂纹或翘曲的基板（24）。支撑部件（18）优选地包括多个真空槽（77,78），其在处理期间保持在真空压力以牢固地将基板（24）粘附到支撑部件（18）。如果真空不能维持在凹槽（77,78）中，则这表示裂纹，错位或扭曲的基材（77,78）。如果发生这种情况，控制器会关闭腔室并指示存在裂纹，翘曲或错位的基材（24）。当腔室（10）中被处理时，腔室还为基板（24）提供边缘保护。这通过在衬底（24）的周边周围形成吹扫气体通道（220）并且对齐衬底（24）的边缘来提供，从而围绕衬底边缘的周边提供吹扫气体间隙。

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