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1. 发明申请

WO2003064059A3 INTEGRATION OF TITANIUM AND TITANIUM NITRIDE LAYERS 审中-公开
公开(公告)号：WO2003064059A3
公开(公告)日：2003-08-07
申请号：PCT/US2003/002217
申请日：2003-01-24
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Michael, X. , ITOH, Toshio , XI, Michael
IPC分类号： H01L21/44
摘要： Embodiments of the present invention generally relate to an apparatus and method of integration of titanium nitride layers. One embodiment (10, 20, 30) includes providing one or more cycles of a first set of compounds, (313) providing one or more cycles of a second set of compounds, and providing one or more cycles of a third set of compounds. One cycle of the first set of compounds includes introducing a titanium precursor and a reductant. One cycle of the second set of compounds (315) includes introducing the titanium precursor and a silicon precursor. One cycle of the third set of compounds includes introducing the titanium precursor and a nitrogen precursor. Another embodiment includes depositing a titanium layer utilizing titanium halide. Then, a passivation layer is deposited over the titanium layer utilizing titanium halide. The passivation layer may comprise titanium nitride, titanium silicon nitride, and combinations thereof. Then, a titanium nitride layer is deposited over the passivation layer utilizing titanium halide.

2. 发明申请

WO2003060186A1 CHAMBER HARDWARE DESIGN FOR TITANIUM NITRIDE ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：硝酸钛原子层沉积的室内硬件设计
公开(公告)号：WO2003060186A1
公开(公告)日：2003-07-24
申请号：PCT/US2002/040785
申请日：2002-12-20
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Anh, N. , CHIAO, Steve, H. , YUAN, Xiaoxiong , LEI, Lawrence, Chung-Lai , XI, Ming , YANG, Michael, X. , SUTTER, Sean, M. , ITOH, Toshio
IPC分类号： C23C16/44
CPC分类号： C23C16/34 , C23C16/4411 , C23C16/45544 , C23C16/45565 , C23C16/4557 , C23C16/45574
摘要： A lid assembly and a method for ALD is provided. In one aspect, the lid assembly includes a lid plate (122) having an upper and lower surface, a manifold block (150) disposed on the upper surface having one or more cooling channels formed therein, and one or more ( 155A, 155B) valves disposed on the manifold block. The lid assembly also includes a distribution plate (130) disposed on the lower surface having a plurality of apertures and one or more openings ( 131A, 131B) formed there-through, and at least two isolated flow paths formed within the lid plate, manifold block, and distribution plate. A first flow path (153A, 124A, 154A) of the at least two isolated flow paths is in fluid communication with the one or more openings and a second flow path of the at least two isolated flow paths is in fluid communication with the plurality of apertures.
摘要翻译：提供盖组件和ALD方法。一方面，盖组件包括具有上表面和下表面的盖板（122），设置在上表面上的具有一个或多个冷却通道的歧管块（150）和一个或多个（155A，155B）设置在歧管块上的阀。盖组件还包括设置在下表面上的分配板（130），其具有多个孔和形成在其中的至少两个隔离的流动通道和形成在盖板内的至少两个隔离流动通道的开口（131A，131B）块和配电盘。所述至少两个隔离流动路径的第一流动路径（153A，124A，154A）与所述一个或多个开口流体连通，并且所述至少两个隔离流动路径的第二流动路径与所述多个孔。

3. 发明申请

WO2003064059A2 INTEGRATION OF TITANIUM AND TITANIUM NITRIDE LAYERS 审中-公开
标题翻译：钛和钛酸盐层的整合
公开(公告)号：WO2003064059A2
公开(公告)日：2003-08-07
申请号：PCT/US2003/002217
申请日：2003-01-24
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Michael, X. , ITOH, Toshio , XI, Michael
IPC分类号： B05D
CPC分类号： C23C16/45531 , C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/45529 , C23C16/45542 , C23C16/45565 , C23C16/5096 , C23C16/515 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/02153 , H01L21/02271 , H01L21/0228 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76856
摘要： Embodiments of the present invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds, providing one or more cycles of a second set of compounds, and providing one or more cycles of a third set of compounds. One cycle of the first set of compounds includes introducing a titanium precursor and a reductant. One cycle of the second set of compounds includes introducing the titanium precursor and a silicon precursor. One cycle of the third set of compounds includes introducing the titanium precursor and a nitrogen precursor. Another embodiment includes depositing a titanium layer utilizing titanium halide. Then, a passivation layer is deposited over the titanium layer utilizing titanium halide. The passivation layer may comprise titanium silicide, titanium silicon nitride, and combinations thereof. Then, a titanium nitride layer is deposited over the passivation layer utilizing titanium halide. Still another embodiment comprises depositing a titanium layer over a surface of a substrate. Then, the titanium layer is treated with a soak with a silicon precursor at a substrate temperature of about 550°C or less to form a treated titanium layer. Then, a titanium nitride layer is deposited over the treated titanium layer.
摘要翻译：本发明的实施例一般涉及钛和氮化钛层的集成装置和方法。一个实施方案包括提供第一组化合物的一个或多个循环，提供第二组化合物的一个或多个循环，以及提供第三组化合物的一个或多个循环。第一组化合物的一个循环包括引入钛前体和还原剂。第二组化合物的一个循环包括引入钛前体和硅前体。第三组化合物的一个循环包括引入钛前体和氮前体。另一实施例包括使用卤化钛沉积钛层。然后，利用钛卤化物在钛层上沉积钝化层。钝化层可以包括硅化钛，氮化钛钛及其组合。然后，利用卤化钛在氮化钛层上沉积钝化层。另一个实施例包括在衬底的表面上沉积钛层。然后，在约550℃或更低的衬底温度下用硅前体浸泡处理钛层以形成经处理的钛层。然后，在处理的钛层上沉积氮化钛层。

4. 发明公开

EP1118105A1 METHOD FOR CLEANING A PROCESS CHAMBER 审中-公开
标题翻译：清理方法处理室
公开(公告)号：EP1118105A1
公开(公告)日：2001-07-25
申请号：EP99948246.6
申请日：1999-09-22
申请人： Applied Materials, Inc.
发明人： VASUDEV, Anand , ITOH, Toshio , SRINIVAS, Ramanujapuram, A. , WU, Frederick , WU, Li , BOYLE, Brian , CHANG, Mei
IPC分类号： H01L21/00
CPC分类号： H01L21/67028 , Y10S438/905 , Y10S438/906
摘要： A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.

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