专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP1444380B1 GAS DELIVERY APPARATUS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：天然气饲料分离原子层
公开(公告)号：EP1444380B1
公开(公告)日：2005-03-23
申请号：EP02792211.1
申请日：2002-10-25
申请人： Applied Materials, Inc.
发明人： CHEN, Ling , KU, Vincent , WU, Dien-Yeh , CHUNG, Hua , OUYE, Alan , NAKASHIMA, Norman , CHANG, Mei
IPC分类号： C23C16/455
CPC分类号： H01L21/76843 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562

2. 发明申请

WO2016179479A1 APPARATUS FOR SELECTIVELY SEALING A GAS FEEDTHROUGH 审中-公开
标题翻译：用于选择性地密封气体的装置
公开(公告)号：WO2016179479A1
公开(公告)日：2016-11-10
申请号：PCT/US2016/031174
申请日：2016-05-06
申请人： APPLIED MATERIALS, INC.
发明人： LAM, Hyman W. H. , WU, Dien-Yeh , MA, Paul F. , YAO, Daping
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： F16K25/00 , C23C16/4401 , C23C16/45561 , C23C16/45565 , F16K15/025 , H01L21/67126
摘要： A valve for sealing a gas feedthrough is provided herein. In some embodiments, a valve for sealing off a gas feedthrough includes a valve body having an upper portion and a lower portion, wherein the upper portion includes a central opening, and wherein the lower portion includes an inner volume; a coupling member disposed within the inner volume and having a central conduit, wherein the inner volume is defined by an upper surface of the coupling member and an upper wall and sidewalls of the lower portion; a sealing member having a shaft extending through the central opening and a flange extending radially outward from the shaft, wherein the flange includes an upper surface which opposes the upper wall of the lower portion; and a biasing element disposed between the sealing member and coupling member to bias the sealing member against the upper wall.
摘要翻译：本文提供了一种用于密封气体馈通的阀。在一些实施例中，用于密封气体馈通的阀包括具有上部和下部的阀体，其中所述上部包括中心开口，并且其中所述下部包括内部容积; 连接构件，其设置在所述内部容积内并且具有中心导管，其中所述内部容积由所述联接构件的上表面和所述下部的上壁和侧壁限定; 密封构件，其具有延伸穿过中心开口的轴和从轴径向向外延伸的凸缘，其中所述凸缘包括与所述下部的上壁相对的上表面; 以及设置在密封构件和联接构件之间以将密封构件偏压抵靠上壁的偏压元件。

3. 发明申请

WO2014008365A1 DEPOSITION OF N-METAL FILMS COMPRISING ALUMINUM ALLOYS 审中-公开
标题翻译：包含铝合金的N金属膜的沉积
公开(公告)号：WO2014008365A1
公开(公告)日：2014-01-09
申请号：PCT/US2013/049266
申请日：2013-07-03
申请人： APPLIED MATERIALS, INC. , GANDIKOTA, Srinivas , LU, Xinliang , CHEN, Shih Chung , TANG, Wei , ZHOU, Jing , GANGULI, Seshadri , THOMPSON, David , ANTHIS, Jeffrey W. , NOORI, Atif , GUNGOR, Faruk , WU, Dien-Yeh , CHANG, Mei , FU, Xinyu , LEI, Yu
发明人： GANDIKOTA, Srinivas , LU, Xinliang , CHEN, Shih Chung , TANG, Wei , ZHOU, Jing , GANGULI, Seshadri , THOMPSON, David , ANTHIS, Jeffrey W. , NOORI, Atif , GUNGOR, Faruk , WU, Dien-Yeh , CHANG, Mei , FU, Xinyu , LEI, Yu
IPC分类号： C23C16/12 , C23C16/44
CPC分类号： C23C18/00 , C23C16/08 , C23C16/18 , C23C16/45527 , C23C16/45534 , C23C16/45553
摘要： Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl 4 , TaCl 5 and HfCl 4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy) 3-a AlH a ]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
摘要翻译：提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

4. 发明申请

WO2021262542A1 LOW-TEMPERATURE PLASMA PRE-CLEAN FOR SELECTIVE GAP FILL 审中-公开
公开(公告)号：WO2021262542A1
公开(公告)日：2021-12-30
申请号：PCT/US2021/038014
申请日：2021-06-18
申请人： APPLIED MATERIALS, INC.
发明人： XU, Yi , HU, Yufei , DAITO, Kazuya , VASQUEZ, Geraldine M. , HE, Da , RAVI, Jallepally , LEI, Yu , WU, Dien-Yeh
IPC分类号： H01L21/768 , C23C16/02 , C23C16/04 , H01J37/32174 , H01L21/02049 , H01L21/02063 , H01L21/67028 , H01L21/76883
摘要： Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100°C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

5. 发明申请

WO2021108294A2 PROCESSING CHAMBER WITH MULTIPLE PLASMA UNITS 审中-公开
公开(公告)号：WO2021108294A2
公开(公告)日：2021-06-03
申请号：PCT/US2020/061759
申请日：2020-11-23
申请人： APPLIED MATERIALS, INC.
发明人： DAITO, Kazuya , XU, Yi , LEI, Yu , KURATOMI, Takashi , RAVI, Jallepally , LEI, Pingyan , WU, Dien-Yeh
IPC分类号： H01J37/32
摘要： Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

6. 发明申请

WO2013059591A1 APPARATUS AND METHOD FOR PROVIDING UNIFORM FLOW OF GAS 审中-公开
标题翻译：用于提供气体均匀流量的装置和方法
公开(公告)号：WO2013059591A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/061022
申请日：2012-10-19
申请人： APPLIED MATERIALS, INC. , YUDOVSKY, Joseph , CHANG, Mei , GUNGOR, Faruk , MA, Paul F. , CHU, David , KAO, Chien-Teh , LAM, Hyman , WU, Dien-Yeh
发明人： YUDOVSKY, Joseph , CHANG, Mei , GUNGOR, Faruk , MA, Paul F. , CHU, David , KAO, Chien-Teh , LAM, Hyman , WU, Dien-Yeh
IPC分类号： H01L21/205
CPC分类号： F17D3/00 , Y10T137/7833
摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.
摘要翻译：提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。入口端可连接到入口气体源，出口端可与真空源连接。还提供了具有螺旋输送通道的气体分配设备，缠绕的螺旋输送通道，分离输送通道，合流输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

7. 发明申请

WO2003035927A2 GAS DELIVERY APPARATUS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：WO2003035927A2
公开(公告)日：2003-05-01
申请号：PCT/US2002/034553
申请日：2002-10-25
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , KU, Vincent , WU, Dien-Yeh , CHUNG, Hua , OUYE, Alan , NAKASHIMA, Norman , CHANG, Mei
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562
摘要： An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.
摘要翻译：提供了用于执行诸如原子层沉积的循环层沉积工艺的装置和方法。在一个方面，该装置包括具有基板接收表面的基板支撑件和腔室盖，腔室盖包括从腔室盖的中心部分延伸的锥形通道和从通道延伸到腔室盖的周边部分的底表面，底表面的形状和尺寸被设计成基本覆盖基板接收表面。该设备还包括一个或多个连接到逐渐扩大的通道的阀门，以及一个或多个连接到每个阀门的气源。

8. 发明申请

WO2021021537A1 METHODS AND APPARATUS FOR DUAL CHANNEL SHOWERHEADS 审中-公开
公开(公告)号：WO2021021537A1
公开(公告)日：2021-02-04
申请号：PCT/US2020/043174
申请日：2020-07-23
申请人： APPLIED MATERIALS, INC.
发明人： RAVI, Jallepally , WU, Dien-Yeh , LEI, Pingyan , KOPPA, Manjunatha , PURATHE, Vinod Konda , KURATOMI, Takashi , CHANG, Mei , YUAN, Xiaoxiong
IPC分类号： C23C16/455 , C23C16/509 , H01J37/32
摘要： Methods and apparatus for gas distribution in a process chamber leverage dual electrodes to provide RF power and an RF ground return in a single showerhead. In some embodiments, the apparatus includes a showerhead composed of a non-metallic material with a first gas channel and a second gas channel, the first gas channel and the second gas channel being independent of each other, and the first gas channel including a plurality of through holes from a top surface of the showerhead to a bottom surface of the showerhead and the second gas channel including a plurality of holes on the bottom surface of the showerhead connected to one or more gas inlets on a side of the showerhead, a first electrode embedded in the showerhead near a top surface of the showerhead, and a second electrode embedded in the showerhead near a bottom surface of the showerhead.

9. 发明申请

WO2020243288A1 THERMAL PROCESS CHAMBER LID WITH BACKSIDE PUMPING 审中-公开
公开(公告)号：WO2020243288A1
公开(公告)日：2020-12-03
申请号：PCT/US2020/034903
申请日：2020-05-28
申请人： APPLIED MATERIALS, INC.
发明人： CUI, Anqing , WU, Dien-Yeh , TANG, Wei V. , YANG, Yixiong , WANG, Bo
IPC分类号： C23C16/455
摘要： Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.

10. 发明申请

WO2019055172A1 SUBSTRATE PROCESSING CHAMBER HAVING HEATED SHOWERHEAD ASSEMBLY 审中-公开
公开(公告)号：WO2019055172A1
公开(公告)日：2019-03-21
申请号：PCT/US2018/047161
申请日：2018-08-21
申请人： APPLIED MATERIALS, INC.
发明人： GUNGOR, Faruk , WU, Dien-Yeh , HUSTON, Joel M. , CHANG, Mei , YUAN, Xiaoxiong , DAITO, Kazuya , GELATOS, Avgerinos V. , KURATOMI, Takashi , CHANG, Yu , CAO, Bin
IPC分类号： H01L21/67 , C23C16/44 , H01L21/02 , H05H1/46
摘要： Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式