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1. 发明申请

WO1995023428A2 CHEMICAL VAPOR DEPOSITION CHAMBER 审中-公开
标题翻译：化学气相沉积室
公开(公告)号：WO1995023428A2
公开(公告)日：1995-08-31
申请号：PCT/US1995002138
申请日：1995-02-21
申请人： APPLIED MATERIALS, INC.
发明人： APPLIED MATERIALS, INC. , SINHA, Ashok , CHANG, Mei , PERLOV, Ilya , LITTAU, Karl , MORRISON, Alan , LEI, Lawrence, Chung-Lai
IPC分类号： H01L21/00
CPC分类号： C23C16/45521 , C23C16/4583 , C23C16/4585
摘要： A chemical vapor deposition chamber (10) includes a substrate support member (18) positionable therein to receive a substrate (24) thereon for processing. The support member (18) is positioned in the chamber (10) by a moveable stem (20) which extends through a sealed aperture (100) in the base of the chamber (10). To reduce heat transfer from the stem (20) outwardly of the chamber, the stem (20) includes a heat choke portion (44). To ensure that the support member (18) does not droop or sag under the high temperature conditions present in the chamber (10), a secondary plate (91) having high thermal resistance is maintained against the non-substrate receiving side of the support member (18). The use of the secondary plate (91) enables the use of highly thermally conductive, but low thermal strength, materials for the support member (18). The chamber (10) also includes a detection system for detecting the presence of mis-aligned, cracked or warped substrates (24) in the chamber (10). The support member (18) preferably incudes a plurality of vacuum grooves (77, 78) therein, which are maintained at a vacuum pressure to firmly adhere the substrate (24) to the support member (18) during processing. If the vacuum is not maintainable in the grooves (77, 78), this is indicative of a cracked, mis-aligned or warped substrate (77, 78). If this condition occurs, a controller shuts down the chamber and indicates the presence of a cracked, warped or mis-aligned substrate (24). The chamber also provides for edge protection of the substrates (24) as they are processed in the chamber (10). This is provided by creating a purge gas channel (220) about the perimeter of the substrate (24) and aligning the edge of the substrate (24) such that a purge gas gap is provided about the perimeter of the substrate edge.
摘要翻译：化学气相沉积室（10）包括可定位在其中的衬底支撑构件（18），用于接收其上的用于处理的衬底（24）。支撑构件（18）通过可移动的杆（20）定位在腔室（10）中，活动杆延伸穿过腔室（10）的底部中的密封孔（100）。为了减少从腔室（20）向外的热传递，杆（20）包括热扼流部分（44）。为了确保支撑构件（18）在室（10）中存在的高温条件下不下垂或下垂，具有高耐热性的次级板（91）保持在支撑构件的非基板接收侧（18）。使用二次板（91）使得能够使用高导热但低热强度的材料用于支撑构件（18）。腔室（10）还包括检测系统，用于检测在腔室（10）中是否存在不对齐的，破裂的或翘曲的基底（24）。支撑构件（18）优选地在其中包括多个真空槽（77,78），其保持在真空压力下，以在加工期间将基板（24）牢固地附接到支撑构件（18）。如果凹槽（77,78）中的真空不能维持，则这表示裂纹的，不对准的或翘曲的基底（77,78）。如果发生这种情况，则控制器关闭室并指示存在破裂，弯曲或不对准衬底（24）。当腔室（10）被处理时，腔室还提供衬底（24）的边缘保护。这通过围绕衬底（24）的周边形成吹扫气体通道（220）并对准衬底（24）的边缘来提供，使得围绕衬底边缘的周边设置净化气体间隙。

2. 发明公开

EP1186005A1 MULTI-ZONE RESISTIVE HEATER 审中-公开
标题翻译：多个区域加热电阻
公开(公告)号：EP1186005A1
公开(公告)日：2002-03-13
申请号：EP00936092.6
申请日：2000-05-19
申请人： Applied Materials, Inc.
发明人： CHEN, Aihua Steven , HO, Henry , YANG, Michael, X. , PEUSE, Bruce, W. , LITTAU, Karl , CHANG, Yu
IPC分类号： H01L21/00
CPC分类号： H01L21/67103
摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

3. 发明公开

EP1185723A1 UTILIZATION OF SIH4, SOAK AND PURGE IN DEPOSITION PROCESSES 审中-公开
标题翻译：使用甲硅烷AS FLUSH和清洁器分离过程
公开(公告)号：EP1185723A1
公开(公告)日：2002-03-13
申请号：EP00936088.4
申请日：2000-05-19
申请人： Applied Materials, Inc.
发明人： LITTAU, Karl , TSENG, Jennifer, Meng Chu , CHANG, Mei , SRINIVAS, Ramanujapuram, A.
IPC分类号： C23C16/42 , H01L21/285 , H01L21/3205 , C23C16/56
CPC分类号： H01L21/28518 , C23C16/42 , C23C16/56
摘要： A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH4, in combination with nitrogen or a noble gas, into the chamber. WSix, is deposited on a semiconductor wafer using a mixture comprising WF6 and dichlorosiliane, and the chamber is subsequently purged of residual WF6 and dichlorosilane by flowing SiH4, in combination with nitrogen or a noble gas, into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH4, in combination with nitrogen, or with nitrogen and a noble gas, into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress.

4. 发明公开

EP1204783A1 A METHOD OF FORMING A SILICON NITRIDE LAYER ON A SEMICONDUCTOR WAFER 审中-公开
标题翻译：方法和装置用于制造氮化硅在半导体晶片
公开(公告)号：EP1204783A1
公开(公告)日：2002-05-15
申请号：EP00957994.7
申请日：2000-07-10
申请人： Applied Materials, Inc.
发明人： YANG, Michael, X. , KAO, Chien-Teh , LITTAU, Karl , CHEN, Steven, A. , HO, Henry , YU, Ying
IPC分类号： C23C16/34 , C23C16/44
CPC分类号： C23C16/4412 , C23C16/345
摘要： The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semicondutor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

5. 发明公开

EP0746874A1 CHEMICAL VAPOR DEPOSITION CHAMBER 失效
标题翻译：化学气相沉积室
公开(公告)号：EP0746874A1
公开(公告)日：1996-12-11
申请号：EP95911831.0
申请日：1995-02-21
申请人： APPLIED MATERIALS, INC.
发明人： SINHA, Ashok , CHANG, Mei , PERLOV, Ilya , LITTAU, Karl , MORRISON, Alan , LEI, Lawrence, Chung-Lai
IPC分类号： C23C16 , H01L21
CPC分类号： C23C16/45521 , C23C16/4583 , C23C16/4585
摘要： A chemical vapor deposition chamber (10) includes a substrate support member (18) positionable therein to receive a substrate (24) thereon for processing. The support member (18) is positioned in the chamber (10) by a moveable stem (20) which extends through a sealed aperture (100) in the base of the chamber (10). To reduce heat transfer from the stem (20) outwardly of the chamber, the stem (20) includes a heat choke portion (44). To ensure that the support member (18) does not droop or sag under the high temperature conditions present in the chamber (10), a secondary plate (91) having high thermal resistance is maintained against the non-substrate receiving side of the support member (18). The use of the secondary plate (91) enables the use of highly thermally conductive, but low thermal strength, materials for the support member (18). The chamber (10) also includes a detection system for detecting the presence of mis-aligned, cracked or warped substrates (24) in the chamber (10). The support member (18) preferably incudes a plurality of vacuum grooves (77, 78) therein, which are maintained at a vacuum pressure to firmly adhere the substrate (24) to the support member (18) during processing. If the vacuum is not maintainable in the grooves (77, 78), this is indicative of a cracked, mis-aligned or warped substrate (77, 78). If this condition occurs, a controller shuts down the chamber and indicates the presence of a cracked, warped or mis-aligned substrate (24). The chamber also provides for edge protection of the substrates (24) as they are processed in the chamber (10). This is provided by creating a purge gas channel (220) about the perimeter of the substrate (24) and aligning the edge of the substrate (24) such that a purge gas gap is provided about the perimeter of the substrate edge.
摘要翻译：化学气相沉积室（10）包括可定位在其中以在其上接收基板（24）以进行处理的基板支撑构件（18）。支撑构件（18）通过延伸穿过腔室（10）的基部中的密封孔（100）的可动杆（20）定位在腔室（10）中。为了减少从室（20）向室外传递的热量，杆（20）包括热扼流部分（44）。为了确保支撑构件18在腔室10中存在的高温条件下不下垂或下垂，具有高热阻的第二板91维持在支撑构件的非基板接收侧上（18）。使用第二板（91）能够为支撑构件（18）使用高导热性但低热强度的材料。腔室（10）还包括检测系统，用于检测腔室（10）中存在错位，裂纹或翘曲的基板（24）。支撑部件（18）优选地包括多个真空槽（77,78），其在处理期间保持在真空压力以牢固地将基板（24）粘附到支撑部件（18）。如果真空不能维持在凹槽（77,78）中，则这表示裂纹，错位或扭曲的基材（77,78）。如果发生这种情况，控制器会关闭腔室并指示存在裂纹，翘曲或错位的基材（24）。当腔室（10）中被处理时，腔室还为基板（24）提供边缘保护。这通过在衬底（24）的周边周围形成吹扫气体通道（220）并且对齐衬底（24）的边缘来提供，从而围绕衬底边缘的周边提供吹扫气体间隙。

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