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1. 发明申请

US20030153177A1 Variable flow deposition apparatus and method in semiconductor substrate processing 失效
标题翻译：半导体衬底加工中的可变流沉积装置和方法
公开(公告)号：US20030153177A1
公开(公告)日：2003-08-14
申请号：US10074854
申请日：2002-02-11
申请人： Applied Materials, Inc.
发明人： Avi Tepman , Lawrence Chung-Iai Lei
IPC分类号： C23C014/00 , H01L021/44
CPC分类号： C23C16/45527 , C23C16/4412 , H01L21/28562
摘要： In one embodiment of the present inventions, an exhaust outlet in a vacuum processing chamber includes a nonsealing flow restrictor which can facilitate rapid opening and closing of the flow restrictor in some applications. Because the flow restrictor is a nonsealing flow restrictor, the conductance of the flow restrictor in the closed position may not be zero. However, the flow restrictor can restrict the flow of an exhaust gas from the chamber to permit the retention of sufficient processing gas in the chamber to deposit a film on the substrate or otherwise react with the substrate. After a film has been deposited, typically in a thin atomic layer, the exhaust flow restrictor may be opened such that the flow restrictor conductance is significantly increased to a second, higher flow rate to facilitate exhausting residue gas from the chamber. The nonsealing flow restrictor may be closed again to deposit a second layer, typically of a different material onto the substrate. The nonsealing flow restrictor may be rapidly opened and closed to deposit alternating layers of a variety of materials onto the substrate.
摘要翻译：在本发明的一个实施例中，真空处理室中的排气出口包括非密封流量限制器，其可以在某些应用中促进限流器的快速打开和关闭。由于限流器是非密封流量限制器，因此限流器在关闭位置的电导可能不为零。然而，限流器可以限制来自腔室的废气的流动，以允许在腔室中保留足够的处理气体以将膜沉积在衬底上或以其它方式与衬底反应。在薄膜沉积后，通常在薄原子层中，可以打开排气限流器，使得限流器电导率显着增加到第二较高的流速，以便排出来自腔室的残余气体。非密封流量限制器可以再次关闭，以将通常为不同材料的第二层沉积到基底上。非密封流量限制器可以被快速地打开和关闭，以将各种材料的交替层沉积到基底上。

2. 发明申请

US20040018070A1 Compact and high throughput semiconductor fabrication system 审中-公开
标题翻译：紧凑且高通量的半导体制造系统
公开(公告)号：US20040018070A1
公开(公告)日：2004-01-29
申请号：US10206724
申请日：2002-07-25
申请人： APPLIED MATERIALS, INC.
发明人： Jun Zhao , Satish Sundar , Vinay K. Shah , Hari K. Ponnekanti , Mario Dave Silvetti , Michael Robert Rice , Avi Tepman , Farhad K. Moghadam
IPC分类号： B65G049/07
CPC分类号： H01L21/67742
摘要： Embodiments of the present invention are directed to substrate processing systems having substrate transferring mechanisms that are compact, have small footprints, and provide fast and efficient substrate transfer to achieve high throughput. In specific embodiments, a unit slab construction is used for the chambers around the substrate transferring mechanism, enabling efficient system construction with improved alignment and at a lower cost. The chambers may share gas, pump, and other utilizes. In one embodiment, an apparatus for processing substrates includes at least three robot blades each configured to support a substrate. A robot is coupled with the at least three robot blades to simultaneously move the robot blades between at least three chambers and simultaneously transfer each of the substrates supported on the robot blades from one chamber to another chamber.
摘要翻译：本发明的实施例涉及具有紧凑的基板转移机构，具有小的占地面积并且提供快速和有效的基板转移以实现高产量的基板处理系统。在具体实施例中，单元板结构用于基板传送机构周围的室，使得能够以更低的成本改进对准和高效的系统构造。这些室可以共享气体，泵和其他利用。在一个实施例中，用于处理衬底的装置包括至少三个机器人刀片，每个机器人刀片被配置为支撑衬底。机器人与所述至少三个机器人刀片耦合以同时在至少三个腔室之间移动所述机器人刀片，并且同时将支撑在所述机器人刀片上的每个基底从一个腔室传送到另一个腔室。

3. 发明申请

US20040084301A1 Electro-chemical deposition system 审中-公开
标题翻译：电化学沉积系统
公开(公告)号：US20040084301A1
公开(公告)日：2004-05-06
申请号：US10690033
申请日：2003-10-20
申请人： APPLIED MATERIALS, INC.
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Marie Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D017/00
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积的系统控制器工艺和电化学沉积系统的组件。

4. 发明申请

US20030129850A1 System for planarizing metal conductive layers 失效
标题翻译：用于平坦化金属导电层的系统
公开(公告)号：US20030129850A1
公开(公告)日：2003-07-10
申请号：US10043561
申请日：2002-01-08
申请人： Applied Materials,Inc.
发明人： Donald J.K. Olgado , Avi Tepman , Dmitry Lubomirsky , Timothy R. Webb
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/6708 , C23F1/18 , H01L21/32115 , H01L21/32134 , H01L21/32136 , H01L21/7684
摘要： A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.
摘要翻译：提供了在基板上平面化金属导电层的方法。在一个实施例中，在衬底支架上设置具有设置在衬底顶表面上的金属导电层的衬底。衬底支撑件旋转并且衬底的顶表面与液体蚀刻组合物接触。然后将金属导电层暴露于蚀刻剂气体，以平坦化金属导电层的顶表面。还提供了一种用于在基板上蚀刻金属导电层的装置。该装置包括容器，设置在容器中的基板支撑件，附接到基板支撑件的旋转致动器以及设置在容器中的流体输送组件。

5. 发明申请

US20040229549A1 Slurry delivery arm 有权
标题翻译：泥浆输送臂
公开(公告)号：US20040229549A1
公开(公告)日：2004-11-18
申请号：US10428914
申请日：2003-05-02
申请人： Applied Materials, Inc.
发明人： Alexander S. Polyak , Avi Tepman
IPC分类号： B24B001/00 , B24B007/30
CPC分类号： B24B37/04 , B24B37/042 , B24B57/02
摘要： A polishing fluid delivery apparatus has been provided that in one embodiment includes a support member, a dispense arm, a polishing fluid delivery tube and a variable restricting device. The dispense arm extends from an upper portion of the support member and has an outlet of the delivery tube coupled thereto. The restricting device interfaces with the delivery tube and is adapted to provide a variable restriction to flow passing through the delivery tube. In another embodiment, the restricting device is a pinch valve and the tube in continuous from the outlet to beyond a portion that interfaces with the pinch valve. In yet another embodiment, the position of the delivery arm is controllable.
摘要翻译：已经提供了一种抛光流体输送装置，其在一个实施例中包括支撑构件，分配臂，抛光流体输送管和可变限制装置。分配臂从支撑构件的上部延伸并且具有与其连接的输送管的出口。限制装置与输送管接口并且适于对通过输送管的流动提供可变的限制。在另一个实施例中，限制装置是夹管阀，并且管从出口连续到超过与夹紧阀相接合的部分。在另一个实施例中，输送臂的位置是可控的。

6. 发明申请

US20020061248A1 High productivity semiconductor wafer processing system 审中-公开
标题翻译：高效率半导体晶圆处理系统
公开(公告)号：US20020061248A1
公开(公告)日：2002-05-23
申请号：US09895805
申请日：2001-06-29
申请人： APPLIED MATERIALS, INC.
发明人： Avi Tepman
IPC分类号： C23C016/00 , B66C023/00
CPC分类号： C23C14/568 , H01L21/67742
摘要： A system and method for transferring a wafer between chambers is provided. Generally, the system includes a first chamber abutting a first wall of a transfer chamber. The transfer chamber includes at least a first transfer robot having a central axis of rotation disposed therein. The first chamber includes a substrate receiving member that is adapted to support the wafer centered on a central axis of the wafer receiving member. The support member is positioned such that a line defined between the central axis of the robot and central axis of the wafer receiving member is disposed at an acute angle relative to the first sidewall.
摘要翻译：提供了一种在室之间传送晶片的系统和方法。通常，系统包括邻接传送室的第一壁的第一室。传送室至少包括设置在其中的具有中心旋转轴线的第一传送机器人。第一室包括基板接收构件，其适于支撑以晶片接收构件的中心轴为中心的晶片。支撑构件被定位成使得限定在机器人的中心轴线和晶片接收构件的中心轴线之间的线相对于第一侧壁以锐角设置。

7. 发明申请

US20040079633A1 Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing 审中-公开
标题翻译：用于电化学沉积具有原位热退火能力的铜金属化的装置
公开(公告)号：US20040079633A1
公开(公告)日：2004-04-29
申请号：US10686486
申请日：2003-10-15
申请人： APPLIED MATERIALS, INC.
发明人： Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl
IPC分类号： C25D017/00
CPC分类号： H01L21/67184 , C25D17/001 , H01L21/2885 , H01L21/6708 , H01L21/67126 , H01L21/6723 , H01L21/67745 , H01L21/67766 , H01L21/68707 , H01L21/68721 , H01L21/68728
摘要： The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.
摘要翻译：本发明通常提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计规则和间隙填充要求的柔性结构，并提供令人满意的吞吐量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与加载站相邻设置的快速热退火室，与主机连接设置的一个或多个处理单元，以及流体连接到所述一个或多个电处理单元的电解质供应。本发明的一个方面提供了用于增强沉积结果的后电化学沉积处理，例如快速热退火处理。优选地，电化学沉积系统包括适于控制电化学沉积过程和电化学沉积系统的部件的系统控制器，包括邻近加载站设置的快速热退火室。

8. 发明申请

US20040045670A1 Cooling system for magnetron sputtering apparatus 有权
标题翻译：磁控溅射装置冷却系统
公开(公告)号：US20040045670A1
公开(公告)日：2004-03-11
申请号：US10655949
申请日：2003-09-05
申请人： Applied Materials, Inc.
发明人： Avi Tepman
IPC分类号： H01L021/306
CPC分类号： H01J37/3497 , H01J37/3405
摘要： Apparatus and method for cooling a magnetron sputtering apparatus. More particularly, a system including a stationary conduit, a hollow drive shaft rotatably coupled to the stationary conduit, and a magnetron coupled to the hollow drive shaft.
摘要翻译：用于冷却磁控管溅射装置的装置和方法。更具体地，包括固定导管，可旋转地联接到固定导管的中空驱动轴和耦合到中空驱动轴的磁控管的系统。

9. 发明申请

US20020084181A1 Alternate steps of IMP and sputtering process to improve sidewall coverage 审中-公开
标题翻译： IMP和溅射过程的替代步骤，以改善侧壁覆盖
公开(公告)号：US20020084181A1
公开(公告)日：2002-07-04
申请号：US10037172
申请日：2001-11-07
申请人： Applied Materials, Inc.
发明人： Praburam Gopalraja , Sergio Edelstein , Avi Tepman , Peijun Ding , Debabrata Ghosh , Nirmalya Maity
IPC分类号： C23C014/35 , C23C014/44
CPC分类号： C23C14/345 , C23C14/046 , C23C14/358 , H01J37/321 , H01J37/3408
摘要： The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.
摘要翻译：本发明提供一种通过PVD在衬底上实现适形步骤覆盖的方法和装置。目标物提供用等离子体溅射然后电离的材料源。通过使用例如感应线圈维持足够密集的等离子体来促进离子化。然后将电离材料沉积在衬底上，其被偏压到负电压。在处理期间提供给目标的信号包括负电压部分和零电压部分。在负电压部分期间，离子被吸引到靶以引起溅射。在零电压部分期间，终止来自靶的溅射，同时衬底上的偏压导致反溅射。因此，负电压部分和零电压部分交替地在溅射步骤和反向溅射步骤之间循环。可以通过调节信号的频率，室压力，提供给每个支撑构件的功率和其他工艺参数来控制膜的质量和均匀性。

10. 发明申请

US20020029961A1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US20020029961A1
公开(公告)日：2002-03-14
申请号：US09867780
申请日：2001-05-29
申请人： Applied Materials, Inc.
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Marie Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D017/00 , C25D007/12 , C25D021/12
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electrochemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electrochemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electrochemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electrochemical deposition process and the components of the electrochemical deposition system.
摘要翻译：本发明提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并且提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元和流体连接到该一个或多个电处理细胞。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积过程和组件的系统控制器的电化学沉积系统。

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