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1. 发明申请

US20040003873A1 Method and apparatus for annealing copper films 有权
标题翻译：铜膜退火方法和设备
公开(公告)号：US20040003873A1
公开(公告)日：2004-01-08
申请号：US10611589
申请日：2003-06-30
申请人： Applied Materials, Inc.
发明人： B. Michelle Chen , Ho Seon Shin , Yezdi Dordi , Ratson Morad , Robin Cheung
IPC分类号： C25D005/50
CPC分类号： H01L21/6723 , C22F1/02 , C22F1/08 , C25D5/48 , C25D5/50 , C25D7/123 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/76838 , H01L21/7684 , H01L21/76886
摘要： A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system.
摘要翻译：一种退火铜的方法和装置。该方法包括通过电镀在一体化处理系统中的基板上形成铜层，并对集成处理系统内的室内的铜层退火。

2. 发明申请

US20030019755A1 Dynamic pulse plating for high aspect ratio features 有权
标题翻译：动态脉冲电镀用于高纵横比特征
公开(公告)号：US20030019755A1
公开(公告)日：2003-01-30
申请号：US09916365
申请日：2001-07-26
申请人： Applied Materials, Inc.
发明人： H. Peter W. Hey , Yezdi Dordi
IPC分类号： C25D005/00
CPC分类号： C25D5/18 , C25D7/123
摘要： A method for depositing a metal on a substrate is provided. The metal is deposited by sequentially applying a electrodeposition pulse followed by an electrodissolution pulse to the substrate. After each electrodissolution pulse an before the next electrodeposition pulse there is provided at least one time interval of zero electrical voltage or current, also known as an nulloff-timenull, between the pulses. The first two electrodeposition pulses should preferably have the same time durations. Thereafter, the time durations of subsequent electrodeposition pulses are gradually decreased to provide a void-free and seam-free deposition of metal in high aspect ratio features.
摘要翻译：提供了一种在基板上沉积金属的方法。通过将电沉积脉冲依次施加到电解溶液脉冲至基底来沉积金属。在每个电解溶液脉冲之前，在下一个电沉积脉冲之前，在脉冲之间提供零电压或电流的至少一个时间间隔，也称为“关闭时间”。优选地，前两个电沉积脉冲具有相同的持续时间。此后，随后的电沉积脉冲的持续时间逐渐减小，以提供在高纵横比特征中金属的无空隙和无缝沉积。

3. 发明申请

US20040020781A1 Electro-chemical deposition cell for face-up processing of single semiconductor substrates 审中-公开
标题翻译：用于单面半导体衬底正面加工的电化学沉积池
公开(公告)号：US20040020781A1
公开(公告)日：2004-02-05
申请号：US10630185
申请日：2003-07-29
申请人： Applied Materials, Inc.
发明人： Yezdi Dordi , Joe Stevens , Roy Edwards , Robert B. Lowrance , Michael Sugarman , Mark Denome
IPC分类号： C25D017/16 , C25D005/00
CPC分类号： H01L21/68721 , C25D5/20 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/005 , C25D17/08 , C25D21/00 , C25D21/18 , H01L21/67051 , H01L21/6715 , H01L21/6838 , H01L21/68742 , H01L21/68792
摘要： An apparatus and method for electro-chemically depositing a uniform metal layer onto a substrate is provided. In one aspect, the apparatus includes a cathode connected to the substrate plating surface, an anode disposed above the substrate support member and an electroplating solution inlet supplying an electroplating solution fluidly connecting the anode and the substrate plating surface. In another aspect, the apparatus further includes a dual catch-cup system having an electroplating solution catch-cup and a rinse catch-cup. The dual catch-cup system provides separation of the electroplating solution and the rinse solutions during processing and provides re-circulating systems for the different solutions of the electroplating system.
摘要翻译：提供了一种用于将均匀金属层电化学沉积到基底上的装置和方法。一方面，该装置包括连接到基板电镀表面的阴极，设置在基板支撑构件上方的阳极和供应流体连接阳极和基板电镀表面的电镀溶液的电镀溶液入口。在另一方面，该装置还包括具有电镀溶液捕捉杯和冲洗捕捉杯的双捕获杯系统。双捕捉杯系统在处理期间提供电镀溶液和冲洗溶液的分离，并为电镀系统的不同溶液提供再循环系统。

4. 发明申请

US20030038107A1 Method and apparatus for removal of unwanted electroplating deposits 审中-公开
标题翻译：去除不需要的电镀沉积物的方法和设备
公开(公告)号：US20030038107A1
公开(公告)日：2003-02-27
申请号：US10269250
申请日：2002-10-11
申请人： Applied Materials, Inc.
发明人： Radha Nayak , Yezdi Dordi , Joseph Stevens , Peter Hey
IPC分类号： C23F001/00 , B08B003/00 , H01L021/306 , C03C015/00 , B44C001/22
CPC分类号： H01L21/6708 , C23F1/08 , H01L21/02087 , H01L21/2885 , H01L21/32134 , H01L21/67051 , H01L21/67207 , Y10S134/902
摘要： An apparatus and associated method for removing deposits from a substrate. In one aspect, a system is provided which supplies etchant to an edge bead removal chamber. The apparatus includes an etchant delivery system, an etchant tank, a sensor, and a mixing tank.
摘要翻译：一种用于从基底去除沉积物的装置和相关方法。在一个方面，提供了一种向边缘珠去除室提供蚀刻剂的系统。该装置包括蚀刻剂传送系统，蚀刻槽，传感器和混合罐。

5. 发明申请

US20020029961A1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US20020029961A1
公开(公告)日：2002-03-14
申请号：US09867780
申请日：2001-05-29
申请人： Applied Materials, Inc.
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Marie Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D017/00 , C25D007/12 , C25D021/12
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electrochemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electrochemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electrochemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electrochemical deposition process and the components of the electrochemical deposition system.
摘要翻译：本发明提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并且提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元和流体连接到该一个或多个电处理细胞。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积过程和组件的系统控制器的电化学沉积系统。

6. 发明申请

US20040104119A1 Small volume electroplating cell 审中-公开
标题翻译：小体积电镀电池
公开(公告)号：US20040104119A1
公开(公告)日：2004-06-03
申请号：US10308848
申请日：2002-12-02
申请人： Applied Materials, Inc.
发明人： Sergio Edelstein , Peter Hey , Yezdi Dordi
IPC分类号： C25D005/00 , C25D017/00
CPC分类号： C25D5/04 , C25D7/123
摘要： A method and apparatus for plating a metal onto a substrate. The apparatus generally The apparatus generally includes a substrate support member configured to support a substrate during a plating process, a cathode clamp ring detachably positioned to circumscribe a perimeter of the substrate and a movable anode assembly disposed above the substrate, wherein the anode assembly is movable in a direction generally perpendicular the substrate. The apparatus generally further includes a fluid inlet formed through the anode assembly, the fluid inlet being configured to supply a plating solution to the processing area sufficient to electrically connect the anode assembly to the substrate. The method generally includes supplying a plating solution to a processing chamber, the processing chamber being defined by a movable anode assembly disposed above the substrate and a cathode clamp ring detachably positioned to circumscribe the perimeter of the substrate, wherein the plating solution is supplied at a rate sufficient to electrically connect the anode assembly to the substrate and plating a metal from the plating solution onto the substrate.
摘要翻译：一种用于将金属电镀到基底上的方法和装置。该装置通常包括：基板支撑构件，其被配置为在电镀过程期间支撑基板;阴极夹环，其可拆卸地定位成围绕基板的周边;以及可移动阳极组件，其设置在所述基板上方，其中所述阳极组件可移动在大致垂直于衬底的方向上。该设备通常还包括通过阳极组件形成的流体入口，流体入口被配置为向处理区域提供足以将阳极组件电连接到衬底的电镀溶液。该方法通常包括向处理室供应电镀液，处理室由设置在基板上方的可移动阳极组件和可拆卸地定位成围绕衬底的周边的阴极夹环限定，其中电镀液以足以将阳极组件电连接到衬底并将金属从电镀溶液镀覆到衬底上。

7. 发明申请

US20040055893A1 Wafer backside electrical contact for electrochemical deposition and electrochemical mechanical polishing 审中-公开
标题翻译：晶圆背面电接触用于电化学沉积和电化学机械抛光
公开(公告)号：US20040055893A1
公开(公告)日：2004-03-25
申请号：US10253240
申请日：2002-09-23
申请人： Applied Materials, Inc.
发明人： Dmitry Lubomirsky , Michael X. Yang , Sheshraj Tulshibagwale , Yezdi Dordi , Howard E. Grunes , Jick M. Yu , Fusen Chen
IPC分类号： C25D017/00 , C25D005/02
CPC分类号： C25D7/123 , C25D17/06 , H01L21/2885
摘要： A method and apparatus for electrochemically plating on a production surface of a substrate are provided. The apparatus generally includes a plating cell having a plating solution reservoir configured to contain a volume of an electrochemical plating solution, and a substrate support member positioned above the plating solution reservoir, the substrate support member being configured to electrically engage a non-production side of a substrate secured thereto. The substrate support member generally includes a substrate support surface having at least one vacuum channel formed therein, a plurality of electrical contact pins extending from the substrate support surface and being positioned to engage a perimeter of the non-production side of the substrate secured thereto, and at least one annular seal positioned on the substrate support surface radially outward of the plurality of electrical contact pins, the at least one annular seal being configured to prevent flow of the electrochemical plating solution to the plurality of electrical contact pins. The plating cell further includes a power supply in electrical communication with an anode positioned in the electrochemical plating solution and the plurality of electrical contact pins.
摘要翻译：提供了一种用于在基板的生产表面上进行电化学电镀的方法和装置。该装置通常包括具有电镀液储存器的电镀槽，该电镀液储存器构造为容纳一定量的电化学电镀溶液，以及位于电镀液储存器上方的基板支撑构件，该基板支撑构件被构造成电接合非电解镀层固定到其上的基板。衬底支撑构件通常包括具有形成在其中的至少一个真空通道的衬底支撑表面，从衬底支撑表面延伸并定位成接合固定到其上的衬底的非生产侧的周边的多个电接触销，以及至少一个环形密封件，其定位在所述多个电接触销的径向外侧的所述基板支撑表面上，所述至少一个环形密封件构造成防止所述电化学电镀液流向所述多个电接触销。电镀单元还包括与位于电化学电镀溶液中的阳极和多个电接触针电连通的电源。

8. 发明申请

US20030000844A1 Method for achieving copper fill of high aspect ratio interconnect features 审中-公开
公开(公告)号：US20030000844A1
公开(公告)日：2003-01-02
申请号：US10180225
申请日：2002-06-26
申请人： Applied Materials, Inc.
发明人： Daniel A. Carl , Barry Chin , Liang Chen , Robin Cheung , Peijun Ding , Yezdi Dordi , Imran Hashim , Peter Hey , Ashok K. Sinha
IPC分类号： C23C014/00 , C23C014/32 , C23C028/00 , C23C028/02 , C25D005/34
CPC分类号： H01L21/2885 , H01L21/76877
摘要： One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer on the substrate using high density plasma physical vapor deposition; depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.

9. 发明申请

US20040084301A1 Electro-chemical deposition system 审中-公开
标题翻译：电化学沉积系统
公开(公告)号：US20040084301A1
公开(公告)日：2004-05-06
申请号：US10690033
申请日：2003-10-20
申请人： APPLIED MATERIALS, INC.
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Marie Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D017/00
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积的系统控制器工艺和电化学沉积系统的组件。

10. 发明申请

US20040016636A1 Electrochemical processing cell 失效
标题翻译：电化学处理池
公开(公告)号：US20040016636A1
公开(公告)日：2004-01-29
申请号：US10268284
申请日：2002-10-09
申请人： Applied Materials, Inc.
发明人： Michael X. Yang , Dmitry Lubomirsky , Yezdi Dordi , Saravjeet Singh , Sheshraj Tulshibagwale , Nicolay Kovarsky
IPC分类号： C25B013/02
CPC分类号： H01L21/2885 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , C07F9/103 , C25D7/123 , C25D17/001
摘要： Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.
摘要翻译：本发明的实施方案通常可以提供小体积的电化学电镀单元。电镀槽通常包括配置成在其中容纳电镀液的流体池，流体池具有基本上水平的堰。电池还包括位于流体槽的下部的阳极，阳极具有穿过其形成的多个平行通道，以及构造成容纳阳极的基座构件，底座构件具有形成为阳极接收的多个槽多个槽中的每一个终止于环形排水通道。提供了一种膜支撑组件，其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上，膜支撑组件具有形成在其中的多个通道和孔。

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