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1. 发明专利

JP2007043131A Thin film transistor, wiring board, and method for manufacturing them 审中-公开
标题翻译：薄膜晶体管，接线板及其制造方法
公开(公告)号：JP2007043131A
公开(公告)日：2007-02-15
申请号：JP2006185481
申请日：2006-07-05
申请人： Aomori Prefecture , Nippon Zeon Co Ltd , Tohoku Univ , 国立大学法人東北大学 , 日本ゼオン株式会社 , 青森県
发明人： SUGAWA SHIGETOSHI , MORIMOTO AKITA , FUJIMURA MAKOTO , KATO TAKEYOSHI , CHIBA MASAHIKO , YAMAGUCHI TOMOYO
IPC分类号： H01L29/786 , H01L21/28 , H01L21/288 , H01L21/336 , H01L29/423 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To solve the problem that it is difficult to provide a large-scale display device since a wiring layer having no level difference and superior adhesiveness and planarity cannot be formed on a transparent substrate. SOLUTION: Adhesiveness and planarity are improved by permitting a gate electrode or a gate wiring of a thin film transistor to have a four-layer structure by successively stacking a base adhesive layer, a catalyst layer, a wiring metal layer, and a wiring metal diffusion suppressing layer. In such a case, the base adhesive layer is formed of a resin having a structure which can be coordinated with a metal, and adhesiveness to an insulating substrate is improved. Furthermore, since diffusion of the wiring metal can be prevented by providing the wiring metal diffusion suppressing layer on the wiring metal layer, characteristics of the thin film transistor can be improved. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题为了解决难以提供大型显示装置的问题，因为在透明基板上不能形成没有水平差和优良的粘合性和平坦度的布线层。解决方案：通过使薄膜晶体管的栅极电极或栅极布线依次堆叠基底粘合剂层，催化剂层，布线金属层和布线金属扩散抑制层。在这种情况下，基底粘合层由具有与金属配合的结构的树脂形成，并且提高了与绝缘基板的粘合性。此外，由于可以通过在布线金属层上设置布线金属扩散抑制层来防止布线金属的扩散，所以可以提高薄膜晶体管的特性。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2006284797A Wired board, manufacturing method thereof and display device 有权
标题翻译：电线板及其制造方法及显示装置
公开(公告)号：JP2006284797A
公开(公告)日：2006-10-19
申请号：JP2005103142
申请日：2005-03-31
申请人： Aomori Prefecture , Tohoku Univ , 国立大学法人東北大学 , 青森県
发明人： SUGAWA SHIGETOSHI , MORIMOTO AKITA , CHIBA MASAHIKO , YAMAGUCHI TOMOYO
IPC分类号： G09F9/30 , G02F1/1343 , H01L21/288 , H01L21/3205 , H01L23/52 , H01L29/423 , H01L29/49 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a wired board in which the film thick of wiring is stabilized and a base metallic layer is prevented from being peeled off.
SOLUTION: The wired board 10 comprising a translucent part 2 for transmitting visible light and a wired part 4 for passing an electric signal has a transparent substrate 1 and a transparent synthetic resin composition film 3 layered on the translucent substrate 1. The wired part 4 comprises a wiring aperture 9 formed on the transparent synthetic resin composition film 3 and reached up to a junction part with the transparent substrate 1 and wires 6, 7 engaged with the aperture 9. The translucent part 2 is formed by a layered part of the transparent substrate 1 and the transparent synthetic resin composition film 3 and a cross-sectional shape orthogonal to the wiring direction of the wiring aperture 9 satisfies the relation of Wm
摘要翻译：要解决的问题：提供一种布线板，其中布线的膜厚度稳定并防止基底金属层被剥离。解决方案：包括用于透射可见光的半透明部分2和用于通过电信号的布线部分4的布线板10具有透明基板1和层叠在透光基板1上的透明合成树脂组合物膜3。部分4包括形成在透明合成树脂组合物膜3上的布线孔9，并且到达与透明基板1的接合部分和与孔9接合的电线6,7。半透明部分2由透明基板1和透明合成树脂组合物膜3和与布线孔9的布线方向正交的横截面形状满足Wm

3. 发明专利

JP2013247387A Reverse side irradiation type solid state image sensor 审中-公开
标题翻译：反向侧面辐射型固态图像传感器
公开(公告)号：JP2013247387A
公开(公告)日：2013-12-09
申请号：JP2012117531
申请日：2012-05-23
申请人： Shimadzu Corp , 株式会社島津製作所 , Tohoku Univ , 国立大学法人東北大学
发明人： TAKUBO KENJI , KONDO YASUSHI , TOMINAGA HIDEKI , SUGAWA SHIGETOSHI , KURODA MICHIHITO
IPC分类号： H04N5/372 , H01L27/148
摘要： PROBLEM TO BE SOLVED: To provide a fast and high sensitivity solid state image sensor which eliminates the causes of speed restrictions in a Kosonocky type image sensor.SOLUTION: In each pixel 2, a plurality of charge collection CCDs 12a and 12b are connected to a photoelectric conversion unit 11 disposed on the reverse side of a substrate and further a CCD memory block 13 is connected to each of the CCDs. Each CCD memory block 13 includes a S/P register 14 with M stages and 1 row and a P register 15 with K stages and M rows. While one of the CCD memory blocks is selected as the destination of charge transfers from the photoelectric conversion unit 11 by controlling the voltages applied to the gate electrodes of the charge collection CCDs 12a and 12b, a signal of each frame is stored in the CCD at each stage of the S/P register. During a period in which charges are transferred from the photoelectric conversion unit 11 for each frame by switching the charge transfer destinations, a charge transfer from the S/P register 14 to the P register 15 is executed in the other CCD memory block 13. Accordingly, even when a frame cycle is shortened, a charge transfer from the S/P register 14 to the P register 15 can be performed well.
摘要翻译：要解决的问题：提供一种快速和高灵敏度的固态图像传感器，其消除了Kosonocky型图像传感器中的速度限制的原因。解决方案：在每个像素2中，多个电荷收集CCD 12a和12b连接到设置在基板的背面的光电转换单元11以及CCD存储块13连接到每个CCD。每个CCD存储块13包括具有M级和1行的S / P寄存器14和具有K级和M行的P寄存器15。虽然通过控制施加到电荷收集CCD 12a和12b的栅电极的电压来选择一个CCD存储器块作为从光电转换单元11进行的电荷转移的目的地，但是每个帧的信号被存储在CCD中 S / P寄存器的每个阶段。在通过切换电荷转移目的地从光电转换单元11向光电转换单元11传送电荷的期间中，在另一个CCD存储器块13中执行从S / P寄存器14到P寄存器15的电荷传送。因此即使缩短帧周期，也可以良好地执行从S / P寄存器14到P寄存器15的电荷传送。

4. 发明专利

JP2012119656A Etching method of soi substrate, backside irradiation photoelectric conversion module on soi substrate, and method of manufacturing the same 有权
标题翻译： SOI衬底上的SOI衬底，背面辐照光电转换模块的蚀刻方法及其制造方法
公开(公告)号：JP2012119656A
公开(公告)日：2012-06-21
申请号：JP2011107701
申请日：2011-05-12
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： OMI TADAHIRO , OHASHI TOMOTSUGU , YOSHIKAWA KAZUHIRO , YOSHIDA TATSURO , UCHIMURA TEPPEI , SOEDA KAZUYOSHI , SUGAWA SHIGETOSHI
IPC分类号： H01L21/306 , H01L21/308 , H01L27/146 , H01L31/10
CPC分类号： H01L31/0248 , H01L21/30604 , H01L21/6708 , H01L27/1464 , H01L29/78603
摘要： PROBLEM TO BE SOLVED: To provide an etching method of an SOI substrate which allows for flat wet etching of an Si substrate at high speed.SOLUTION: Nitric acid fluoride is written generally as HF(a)HNO(b)HO(c)(where, the unit of a, b and c is wt.%, and a+b+c=100). An etching rate of an SiOlayer by high concentration nitric acid fluoride becomes significantly lower when compared with that of an Si substrate, and the Si substrate is etched until the SiOlayer is exposed. Consequently, the Si substrate can be etched at high speed, and planarity of the etched surface can be enhanced significantly when compared with the prior art. Even if the composition of high concentration nitric acid fluoride etches the SiOlayer only slightly, etching of the Si substrate finishes at high speed and since etching of the SiOlayer does not progress substantially, the SiOlayer having a flat surface is exposed.
摘要翻译：要解决的问题：提供允许高速地对Si衬底进行平坦湿式蚀刻的SOI衬底的蚀刻方法。
解决方案：硝酸氟化物通常用HF（a）HNO 3（b）H（SB POS =“POST”> 2 ）（其中a，b和c的单位为重量％，a + b + c = 100）。与Si衬底相比，通过高浓度硝酸氟化物的SiO 2 层的蚀刻速率显着降低，并且将Si衬底蚀刻直到SiO 2 层。因此，可以高速刻蚀Si衬底，与现有技术相比，可以显着提高蚀刻表面的平面度。即使高浓度硝酸氟化物的组成仅略微蚀刻SiO 2 层，Si衬底的蚀刻以高速完成，并且由于SiO 2 层没有显着进行，具有平坦表面的SiO 2 层被暴露。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2006261159A Ferroelectric film, metal oxide, semiconductor device and manufacturing method thereof 审中-公开
标题翻译：电解膜，金属氧化物，半导体器件及其制造方法
公开(公告)号：JP2006261159A
公开(公告)日：2006-09-28
申请号：JP2005072341
申请日：2005-03-15
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： OMI TADAHIRO , SUGAWA SHIGETOSHI , TERAMOTO AKINOBU , TAKAHASHI ICHIRO , SAKURAI HIROYUKI , ISOGAI TATSUNORI
IPC分类号： H01L21/316 , C23C16/40 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device used for a ferrorelectric memory device having a thin ferroelectric film thickness and a long-time data storage characteristic, a manufacturing method thereof, a manufacturing apparatus thereof, a ferroelectric film, and a method of manufacturing the ferroelectric film.
SOLUTION: The ferroelectric film 57 employs a ferroelectric material containing Sr, Ta and Nb as main components as a film material, and has a data storage period of 10 or more days. The method of manufacturing the ferroelectric film has a film forming process of forming the ferroelectric film 57, and an oxygen introducing process for oxidizing the ferroelectric film 57 with oxygen radicals 58.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于具有薄铁电薄膜厚度和长时间数据存储特性的铁电介质存储器件的半导体器件，其制造方法，其制造装置，铁电薄膜和制造铁电体膜的方法。解决方案：铁电体膜57采用含有Sr，Ta和Nb作为主要成分的铁电材料作为膜材料，数据存储期为10天以上。铁电体膜的制造方法具有形成强电介质膜57的成膜工艺和氧自由基58氧化强电介质膜57的氧气引入工序。（C）2006，JPO＆NCIPI

6. 发明专利

JP2006245522A Optical sensor, solid-state imaging device, and operation method of solid-state imaging device 有权
标题翻译：光学传感器，固态成像装置以及固态成象装置的操作方法
公开(公告)号：JP2006245522A
公开(公告)日：2006-09-14
申请号：JP2005111071
申请日：2005-04-07
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： SUGAWA SHIGETOSHI , AKAHA NANA
IPC分类号： H01L31/10 , H01L27/146 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/369 , H04N5/374
CPC分类号： H04N5/37452 , H04N5/35572 , H04N5/3559 , H04N5/374
摘要： PROBLEM TO BE SOLVED: To provide a solid-state imaging device, a line sensor and an optical sensor for realizing dynamic range, while keeping high sensitivity and a high S/N ratio, and to provide an operation method of the solid state imaging device for realizing dynamic range, while keeping high the sensitivity and high S/N ratio. SOLUTION: Two or more pixels, which include a photodiode for receiving light and generating optical charges, a transfer transistor connected to the photodiode for transferring the optical charges, and at least first and second plural storage capacitive elements for storing optical chargers, overflowing at the time of storage operation through the transfer transistor or an overflow gate, are arranged in one-dimensional or two-dimensional array in this constitution. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供固态成像装置，线传感器和用于实现动态范围的光学传感器，同时保持高灵敏度和高S / N比，并提供固体的操作方法实现动态范围的状态成像装置，同时保持高灵敏度和高S / N比。解决方案：包括用于接收光并产生光电荷的光电二极管的两个或更多像素，连接到用于传送光电荷的光电二极管的传输晶体管，以及用于存储光学充电器的至少第一和第二多个存储电容元件，在这种结构中，通过传输晶体管或溢出栅极的存储操作溢出，以一维或二维阵列排列。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2014179655A Method for etching soi substrate 审中-公开
标题翻译：蚀刻SOI衬底的方法
公开(公告)号：JP2014179655A
公开(公告)日：2014-09-25
申请号：JP2014117864
申请日：2014-06-06
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： OMI TADAHIRO , OHASHI TOMOTSUGU , YOSHIKAWA KAZUHIRO , YOSHIDA TATSURO , UCHIMURA TEPPEI , SOEDA KAZUYOSHI , SUGAWA SHIGETOSHI
IPC分类号： H01L21/308 , H01L27/146 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a method for etching an SOI substrate by which a Si substrate can be wet-etched flatly at a high rate.SOLUTION: A method for etching an SOI substrate including a Si substrate, a surface Si layer and a SiOlayer located therebetween comprises the step of etching the Si substrate by use of a nitrohydrofluoric acid until the SiOlayer is exposed, provided that the nitrohydrofluoric acid is represented by HF(a)HNO(b)HO(c)(where the units of a, b and c are all wt.%; a+b+c=100) in general. This is arranged based on the finding by the inventors that an etching rate at which a nitrohydrofluoric acid of a high concentration etches the a SiOlayer can be made remarkably smaller in comparison to an etching rate for a Si substrate by appropriately selecting the composition of etchant. Making arrangement like this, a Si substrate can be etched at a high rate, and the flatness of a surface resulting from the etching can be remarkably increased in comparison to that achieved in the past. Even if the nitrohydrofluoric acid of a high concentration has a composition which allows a just slight amount of a SiOlayer to be etched, it can complete the etching of a Si substrate at a high rate and therefore, the etching of the SiOlayer is substantially hardly advanced, and the SiOlayer having a flat surface ends up being exposed.
摘要翻译：要解决的问题：提供一种用于蚀刻SOI衬底的方法，通过该SOI衬底可以以高速度平坦地湿蚀刻Si衬底。解决方案：一种用于蚀刻包括Si衬底，表面Si层和位于它们之间的SiO层包括通过使用硝基氢氟酸来蚀刻Si衬底直到SiO 2层暴露的步骤，条件是硝酸氢氟酸由HF（a）HNO（b）HO（c）表示（其中a， b和c全部为重量％; a + b + c = 100）。这是基于本发明人的发现，通过适当选择蚀刻剂的组成，与Si衬底的蚀刻速率相比，可以使高SiO 2的硝酸氢氟酸腐蚀的蚀刻速率显着降低。像这样进行布置，可以高速率地蚀刻Si衬底，与过去相比，可以显着提高由蚀刻产生的表面的平坦度。即使高浓度的硝基氢氟酸具有允许仅仅少量SiO 2被蚀刻的组成，也可以高速率地完成Si衬底的蚀刻，因此，SiO层的蚀刻几乎不进行并且具有平坦表面的SiO层最终暴露。

8. 发明专利

JP2009177206A Ferroelectric film, metal oxide, semiconductor apparatus and method of manufacturing the same 有权
标题翻译：电解膜，金属氧化物，半导体装置及其制造方法
公开(公告)号：JP2009177206A
公开(公告)日：2009-08-06
申请号：JP2009112686
申请日：2009-05-07
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： OMI TADAHIRO , SUGAWA SHIGETOSHI , TERAMOTO AKINOBU , TAKAHASHI ICHIRO , SAKURAI HIROYUKI , ISOGAI TATSUNORI
IPC分类号： H01L21/316 , C23C16/40 , C23C16/505 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor apparatus employed for a ferrorelectric memory device having a ferroelectric film which is thin in film thickness, while having a long-term data storage characteristic, a method of manufacturing the semiconductor apparatus, a device for manufacturing the semiconductor apparatus, the ferroelectric film, and a method of manufacturing the ferroelectric film.
SOLUTION: The ferroelectric film 57 has a ferroelectric material employed as a film material, the ferroelectric material containing Sr, Ta and Nb as major components, while having data storage time of 10 days or more. The method of manufacturing a ferroelectric film has: a film-forming step of forming a ferroelectric film 57; and an oxygen introducing step of oxidizing the ferroelectric film 57 with oxygen radicals 58.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了提供一种用于具有薄膜厚度的铁电体膜的铁电膜的半导体装置，同时具有长期数据存储特性，制造半导体装置的方法，装置用于制造半导体器件，铁电体膜和制造铁电体膜的方法。解决方案：铁电薄膜57具有用作薄膜材料的铁电材料，铁电材料含有Sr，Ta和Nb作为主要组分，同时具有10天或更长的数据存储时间。铁电体膜的制造方法具有形成强电介质膜57的成膜工序，以及氧氧引入步骤，用氧自由基58氧化铁电薄膜57.版权所有：（C）2009，JPO＆INPIT

9. 发明专利

JP2013247137A Solid state imaging device 审中-公开
标题翻译：固态成像装置
公开(公告)号：JP2013247137A
公开(公告)日：2013-12-09
申请号：JP2012117532
申请日：2012-05-23
申请人： Shimadzu Corp , 株式会社島津製作所 , Tohoku Univ , 国立大学法人東北大学
发明人： KONDO YASUSHI , TAKUBO KENJI , TOMINAGA HIDEKI , SUGAWA SHIGETOSHI , KURODA MICHIHITO
IPC分类号： H01L27/148 , H04N5/372
摘要： PROBLEM TO BE SOLVED: To provide a solid state imaging device capable of faster imaging than conventional one.SOLUTION: A solid state imaging device includes a PD 11 for photoelectric conversion of signal light incident from backside, an FD 13 for converting an electric charge of a signal to a voltage signal, and a memory part 2, for storing image signals for a plurality of image frames, disposed adjacent to each pixel 1 including source follower amplifier 15. The memory part 2 includes a CCD register 2B and a switch 21 for directly writing a voltage signal to each CCD 22 of the register 2B. At imaging, every time a frame of imaging signal is obtained, the signals are sequentially written to the CCD 22 through a closed switch 21. At signal reading, electric charge transfer of the CCD is used. The imaging device is capable of fast writing at a low driving current because of light load of the amplifier 15, since each pixel 1 and the memory part 2 are close, and a wiring length of their connection is short. Power consumption is low at the time of imaging, since the CCD 22 is not driven.
摘要翻译：要解决的问题：提供能够比常规成像更快地成像的固态成像装置。解决方案：固态成像装置包括用于从背面入射的信号光的光电转换的PD11，用于转换电荷的FD 13的电荷一个电压信号的信号，以及存储器部分2，用于存储与包括源跟随器放大器15的每个像素1相邻的多个图像帧的图像信号。存储器部分2包括CCD寄存器2B和开关21，直接向寄存器2B的每个CCD 22写入电压信号。在成像时，每次获得一帧成像信号时，信号通过闭合开关21顺序写入CCD22中。在信号读取时，使用CCD的电荷转移。由于每个像素1和存储器部分2都靠近，所以成像装置由于放大器15的轻负载而能以低驱动电流进行快速写入，并且其连接的布线长度短。成像时的功耗低，因为CCD22未被驱动。

10. 发明专利

JP2011035382A Solid-state imaging element 有权
标题翻译：固态成像元件
公开(公告)号：JP2011035382A
公开(公告)日：2011-02-17
申请号：JP2010142763
申请日：2010-06-23
申请人： Link Research Kk , Shimadzu Corp , Tohoku Univ , リンク・リサーチ株式会社 , 国立大学法人東北大学 , 株式会社島津製作所
发明人： KONDO YASUSHI , TOMINAGA HIDEKI , TAKUBO KENJI , HIROSE RYUTA , SUGAWA SHIGETOSHI , MUTO HIDEKI
IPC分类号： H01L27/146 , H04N5/369
CPC分类号： H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/1461
摘要： PROBLEM TO BE SOLVED: To improve the detection sensitivity and an S/N of a solid state imaging element for extremely high-speed imaging at million frames per second and more without impairing imaging speed. SOLUTION: A floating diffusion (FD) region 13 is formed at the edge of a light receiving surface of an embedded photodiode, and with a transfer gate electrode 12 therebetween. A first region 111 with a radially extending section centered on the FD region 13, and a second region 112 located outside the first region are created in the roughly fan-shaped light receiving surface. Impurities of the same conductivity types as signal electrical charges collected in the first region 111 are introduced, thus forming an electric field which directs the signal electrical charge from the radially extending section toward the center according to the three-dimensional electric field effect. As a result, an electrical charge transfer time is reduced. Additionally, since a circuit element for a subsequent stage can be disposed adjacent to the FD region 13, the parasitic capacitance of the FD region 13 can be reduced and a highly-sensitive element can be obtained. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提高用于以每秒百万帧以上的超高速成像的固态成像元件的检测灵敏度和S / N，而不损害成像速度。解决方案：在嵌入式光电二极管的光接收表面的边缘处形成浮动扩散（FD）区域13，并且其间具有传输栅电极12。在大致扇形的光接收表面上产生具有以FD区域13为中心的径向延伸部分的第一区域111和位于第一区域外部的第二区域112。引入与在第一区域111中收集的信号电荷相同的导电类型的杂质，从而形成根据三维电场效应将信号电荷从径向延伸部分朝向中心引导的电场。结果，减少了电荷转移时间。此外，由于用于后级的电路元件可以被布置为与FD区域13相邻，所以可以减小FD区域13的寄生电容并且可以获得高灵敏度元件。版权所有（C）2011，JPO＆INPIT

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