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1. 发明专利

JP2007043131A Thin film transistor, wiring board, and method for manufacturing them 审中-公开
标题翻译：薄膜晶体管，接线板及其制造方法
公开(公告)号：JP2007043131A
公开(公告)日：2007-02-15
申请号：JP2006185481
申请日：2006-07-05
申请人： Aomori Prefecture , Nippon Zeon Co Ltd , Tohoku Univ , 国立大学法人東北大学 , 日本ゼオン株式会社 , 青森県
发明人： SUGAWA SHIGETOSHI , MORIMOTO AKITA , FUJIMURA MAKOTO , KATO TAKEYOSHI , CHIBA MASAHIKO , YAMAGUCHI TOMOYO
IPC分类号： H01L29/786 , H01L21/28 , H01L21/288 , H01L21/336 , H01L29/423 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To solve the problem that it is difficult to provide a large-scale display device since a wiring layer having no level difference and superior adhesiveness and planarity cannot be formed on a transparent substrate. SOLUTION: Adhesiveness and planarity are improved by permitting a gate electrode or a gate wiring of a thin film transistor to have a four-layer structure by successively stacking a base adhesive layer, a catalyst layer, a wiring metal layer, and a wiring metal diffusion suppressing layer. In such a case, the base adhesive layer is formed of a resin having a structure which can be coordinated with a metal, and adhesiveness to an insulating substrate is improved. Furthermore, since diffusion of the wiring metal can be prevented by providing the wiring metal diffusion suppressing layer on the wiring metal layer, characteristics of the thin film transistor can be improved. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题为了解决难以提供大型显示装置的问题，因为在透明基板上不能形成没有水平差和优良的粘合性和平坦度的布线层。解决方案：通过使薄膜晶体管的栅极电极或栅极布线依次堆叠基底粘合剂层，催化剂层，布线金属层和布线金属扩散抑制层。在这种情况下，基底粘合层由具有与金属配合的结构的树脂形成，并且提高了与绝缘基板的粘合性。此外，由于可以通过在布线金属层上设置布线金属扩散抑制层来防止布线金属的扩散，所以可以提高薄膜晶体管的特性。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2004087627A Circuit board 有权
标题翻译：电路板
公开(公告)号：JP2004087627A
公开(公告)日：2004-03-18
申请号：JP2002244216
申请日：2002-08-23
申请人： Nippon Zeon Co Ltd , Tadahiro Omi , 大見忠弘 , 日本ゼオン株式会社
发明人： OMI TADAHIRO , SUGAWA SHIGETOSHI , MORIMOTO AKIO , KATO TAKEYOSHI , WAKIZAKA YASUHIRO
IPC分类号： H05K1/03 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To save power consumption in the whole LSI system including a circuit board such as a printed wiring board by improving the characteristic impedance of a signal transmission line whose upper limit is about 200 Ω conventionally to ≥300Ω, prefrably ≥500Ω, and to improve the signal quality of a signal propagated through a wire by suppressing crosstalk with an adjacent line and radiaiton noise.
SOLUTION: The circuit board is obtained by forming conductive films 102 and 103 on one or both of the sides of a board consisting of a first insulator 101. A conductor is substantially surrounded by the first insulator which satisfies μr≥εr in the case of setting a specific inductive capacity to be εr and relative permeability to be μr.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了通过将上限为大约200Ω的信号传输线的特性阻抗通常改善为≥300Ω来节省包括诸如印刷线路板的电路板在内的整个LSI系统的功耗，可预期地 ≥500Ω，并通过抑制与相邻线和放射性噪声的串扰来提高通过导线传播的信号的信号质量。解决方案：通过在由第一绝缘体101组成的板的一侧或两侧上形成导电膜102和103而获得电路板。导体基本上被第一绝缘体包围，其中第一绝缘体满足μr≥εr 将感应电容设定为εr，相对磁导率为μr的情况。版权所有（C）2004，JPO

3. 发明专利

JP2005064154A Circuit substrate, electronic instrument using the same and manufacturing method thereof 审中-公开
标题翻译：电路基板，使用该电路的电子仪器及其制造方法
公开(公告)号：JP2005064154A
公开(公告)日：2005-03-10
申请号：JP2003290912
申请日：2003-08-08
申请人： Nippon Zeon Co Ltd , Tadahiro Omi , 忠弘大見 , 日本ゼオン株式会社
发明人： OMI TADAHIRO , SUGAWA SHIGETOSHI , MORIMOTO AKITA , KATO TAKEYOSHI , WAKIZAKA YASUHIRO
IPC分类号： H05K1/11 , H01L23/12 , H05K1/03 , H05K3/00 , H05K3/26 , H05K3/46 , H05K9/00
摘要： PROBLEM TO BE SOLVED: To form a circuit substrate using a magnetic dielectric body in multilayer. SOLUTION: The circuit substrate is provided with an insulating body layer 12 having first and second main surfaces opposed to each other, and a hole 41 orthogonal to the first and second main surfaces, and first and second wiring layers 21', 22' formed on the first and second main surfaces of the insulating body layer 12. At least one part of the insulating body layer 12 satisfies the relation of ε r ≤μ r when the specific inductive capacity of the insulating body layer 12 is shown by ε r and the relative permeability is shown by μ r . Further, an electric connecting body 51 is formed on the inner surface of the hole 41, in a state in which the layer 12 is contacted with the first and second wiring layers 21', 22' to connect the first and second wiring layers 21', 22' electrically. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在多层中形成使用磁性介电体的电路基板。解决方案：电路基板设置有绝缘体层12，绝缘体层12具有彼此相对的第一和第二主表面以及与第一和第二主表面正交的孔41以及第一和第二布线层21'，22 形成在绝缘体层12的第一和第二主表面上。绝缘体层12的至少一部分满足ε r ≤μ r 的关系，当绝缘体层12的比电感率由ε r 表示，相对磁导率由μSB> r SB表示。此外，在层12与第一和第二布线层21'，22'接触的状态下，在孔41的内表面上形成电连接体51，以连接第一和第二布线层21' ，22'电。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2010034092A Organic composite electron device and manufacturing method thereof, and ferroelectric memory using organic composite electron device 审中-公开
标题翻译：有机复合电子器件及其制造方法，以及使用有机复合电子器件的电磁存储器
公开(公告)号：JP2010034092A
公开(公告)日：2010-02-12
申请号：JP2006319186
申请日：2006-11-27
申请人： Iwate Univ , Nippon Zeon Co Ltd , 国立大学法人岩手大学 , 日本ゼオン株式会社
发明人： BABA MAMORU , KANO YOSHIAKI , KATO TAKEYOSHI
IPC分类号： H01L21/8246 , H01L21/8234 , H01L27/088 , H01L27/105 , H01L27/28 , H01L29/786 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To facilitate the manufacture of an organic composite electron device having not less than two organic thin-film transistors having mutually different performance.
SOLUTION: The organic composite electron device, which icludes a first transistor Tr1 and a second one Tr2 having performance differing from that of the first transistor Tr1, is manufactured by the manufacturing method. A gate electrode Ga1 for the first transistor and a gate electrode Ga2 for the second transistor are formed on a substrate 11, a ferroelectric film 17b and a low dielectric-constant film 17a having a low dielectric constant are formed on the respective gate electrodes, and a portion for composing the second transistor Tr2 of the low dielectric-constant film 17a is removed, and an organic semiconductor film 16 is formed thereon. After that, source-drain electrodes So1, Dr1 for the first transistor are formed, while sandwiching the ferroelectric film 17b, the low dielectric-constant film 17a, and the organic semiconductor film 16, and source-drain electrodes So2, Dr2 for the second transistor are formed, while sandwiching the ferroelectric film 17b and the organic semiconductor film 16.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了促进具有不少于两个具有相互不同性能的有机薄膜晶体管的有机复合电子器件的制造。解决方案：通过制造方法制造出具有与第一晶体管Tr1的性能不同的第一晶体管Tr1和第二Tr2的有机复合电子器件。在各个栅电极上形成有用于第一晶体管的栅电极Ga1和用于第二晶体管的栅电极Ga2，具有低介电常数的基板11，强电介质膜17b和低介电常数膜17a，除去构成低介电常数膜17a的第二晶体管Tr2的部分，在其上形成有机半导体膜16。之后，形成用于第一晶体管的源极 - 漏极电极So1，Dr1，同时夹着铁电体膜17b，低介电常数膜17a和有机半导体膜16，以及用于第二晶体管的源极 - 漏极电极So2，Dr2 在夹着铁电体膜17b和有机半导体膜16的同时形成晶体管。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010034090A Organic thin-film transistor, gate insulation film, method of manufacturing organic thin-film transistor, and display 审中-公开
标题翻译：有机薄膜晶体管，栅绝缘膜，制造有机薄膜晶体管的方法和显示
公开(公告)号：JP2010034090A
公开(公告)日：2010-02-12
申请号：JP2006319184
申请日：2006-11-27
申请人： Iwate Univ , Nippon Zeon Co Ltd , 国立大学法人岩手大学 , 日本ゼオン株式会社
发明人： BABA MAMORU , KANO YOSHIAKI , KATO TAKEYOSHI
IPC分类号： H01L29/786 , G02F1/136 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/336 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To provide an organic thin-film transistor that suppresses a leakage current in a gate insulation film, obtains high insulation film capacity, and is operated by a low gate voltage.
SOLUTION: The organic thin-film transistor has a gate electrode 18, the gate insulation film 17, an organic semiconductor film 16, a drain electrode 14, and a source electrode 15 on a substrate 11. The gate insulation film 17 has a two-layer structure of low and high dielectric films 17a, 17b. The low dielectric film 17a is disposed between the high dielectric film 17b and the organic semiconductor film 16, and includes an organic high molecular compound having neither a functional group with a pair of unshared electrons nor π electron coupling in a molecular structure.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供抑制栅极绝缘膜中的漏电流的有机薄膜晶体管，获得高绝缘膜容量，并且由低栅极电压操作。解决方案：有机薄膜晶体管在基板11上具有栅极电极18，栅极绝缘膜17，有机半导体膜16，漏极14和源极15。栅极绝缘膜17具有低和高电介质膜17a，17b的两层结构。低电介质膜17a配置在高电介质膜17b和有机半导体膜16之间，并且包括在分子结构中既不具有一对未共享电子的官能团也不具有π电子耦合的有机高分子化合物。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009272354A Dielectric material for sealing variable capacitor, variable capacitor and element assembly 审中-公开
标题翻译：用于密封可变电容器，可变电容器和元件组件的电介质材料
公开(公告)号：JP2009272354A
公开(公告)日：2009-11-19
申请号：JP2008119414
申请日：2008-04-30
申请人： Nippon Zeon Co Ltd , Omron Corp , オムロン株式会社 , 日本ゼオン株式会社
发明人： MORIGUCHI MAKOTO , SATO MASATAKE , SAKAMOTO KEI , HAYASHI MASAHIKO , KATO TAKEYOSHI
IPC分类号： H01G5/013
摘要： PROBLEM TO BE SOLVED: To provide: a dielectric material for sealing a variable capacitor which has a large change in capacity for micro electric machine system; a variable capacitor provided with the dielectric material as dielectrics; and an element assembly where passive elements such as a variable capacitor are integrated. SOLUTION: The variable capacitor includes a dielectric material for sealing a variable capacitor which is a liquid with a relative dielectric constant of 5 or more, and a sealing part for sealing a variable electrode, a fixed electrode and the dielectric material. The variable electrode and the fixed electrode are made to face each other with the sealing part in between and they are supported. When external bias voltage is applied between the variable electrode and the fixed electrode, the variable electrode is swayed by an action of Coulomb force, and the electrostatic capacity of the variable capacitor is changed. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供：用于密封微电机系统容量变化大的可变电容器的电介质材料; 设置有电介质材料作为电介质的可变电容器; 以及诸如可变电容器的无源元件被集成的元件组件。解决方案：可变电容器包括用于密封可变电容器的电介质材料，该可变电容器是相对介电常数为5或更大的液体，以及用于密封可变电极，固定电极和电介质材料的密封部件。可变电极和固定电极被形成为彼此面对，密封部分在其间并被支撑。当在可变电极和固定电极之间施加外部偏置电压时，可变电极通过库仑力的作用而摇摆，并且可变电容器的静电容量改变。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010034091A Organic composite electron device and manufacturing method thereof, and organic semiconductor memory using the organic composite electron device 审中-公开
标题翻译：有机复合电子器件及其制造方法，以及使用有机复合电子器件的有机半导体存储器
公开(公告)号：JP2010034091A
公开(公告)日：2010-02-12
申请号：JP2006319185
申请日：2006-11-27
申请人： Iwate Univ , Nippon Zeon Co Ltd , 国立大学法人岩手大学 , 日本ゼオン株式会社
发明人： BABA MAMORU , KANO YOSHIAKI , KATO TAKEYOSHI
IPC分类号： H01L21/8246 , H01L21/8234 , H01L27/06 , H01L27/08 , H01L27/105 , H01L27/28 , H01L29/786 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To facilitate the manufacture of an organic composite electron device having an organic thin-film transistor and a high dielectric capacitor.
SOLUTION: The organic composite electron device having a transistor Tr and a capacitor Ca is manufactured by the manufacturing method. A gate electrode Ga and one CE1 of a pair of counter electrodes for capacitors are formed on a substrate 11. Then, a high dielectric film 17b, a low dielectric film 17a, and an organic semiconductor film 16 are formed on the electrodes. A portion, which corresponds to the low dielectric film 17a and the counter electrode CE1 for capacitors of the organic semiconductor film 16, is removed. Then, a source electrode So and a drain electrode Dr are formed thereon in a prescribed position relationship to the gate electrode Ga, while sandwiching the high and low dielectric films 17b, 17a, and the organic semiconductor film 16, and the other counter electrode CE2 for capacitors is formed, while sandwiching the high dielectric film 17b correspondingly.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了促进具有有机薄膜晶体管和高介电电容器的有机复合电子器件的制造。解决方案：通过制造方法制造具有晶体管Tr和电容器Ca的有机复合电子器件。在基板11上形成有用于电容器的一对对置电极的栅电极Ga和一个CE1。然后，在电极上形成高电介质膜17b，低电介质膜17a和有机半导体膜16。去除与低电介质膜17a和用于有机半导体膜16的电容器的对电极CE1对应的部分。然后，在与高电介质膜17b，17a和有机半导体膜16同时夹着高电介质膜17a和有机半导体膜16的同时，以与栅电极Ga规定的位置关系形成源电极So和漏极Dr，形成电容器，同时相应地夹着高电介质膜17b。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2007251093A Gate insulating film, organic thin film transistor and manufacturing method of transistor, and display device 审中-公开
标题翻译：栅绝缘膜，有机薄膜晶体管和晶体管的制造方法和显示器件
公开(公告)号：JP2007251093A
公开(公告)日：2007-09-27
申请号：JP2006076279
申请日：2006-03-20
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： KATO TAKEYOSHI
IPC分类号： H01L29/786 , H01L21/312 , H01L51/05 , H01L51/30 , H01L51/50 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To provide a gate insulating film which has a high on-state current, restrains generation of an off-state current and can obtain a high insulating film capacity, an organic thin film transistor which has the gate insulating film, has a large on/off ratio and can operate at a low gate voltage, a manufacturing method of the organic thin film transistor and a display device having the organic thin film transistor. SOLUTION: The gate insulating film comprises organic high molecular polymer and has the surface arithmetic mean roughness Ra of ≤10 nm and concentration of an element with unshared electron pair of a surface less than 1 atomic%. The organic thin film transistor has (a) an organic semiconductor film, (b) a gate electrode, (c) a source electrode, (d) a drain electrode and (e) the organic thin film transistor with the gate insulating film on a substrate. The manufacturing method of the organic thin film transistor has a process for preparing a solution by dissolving the organic polymer in a solvent and a process for forming a gate insulating film by removing the solvent after the solution is casted on the substrate. The display device has the organic thin film transistor. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有高导通电流的栅极绝缘膜，抑制了截止电流的产生并且可以获得高的绝缘膜电容，具有栅极绝缘的有机薄膜晶体管膜，具有大的开/关比，并且可以在低栅极电压下操作，有机薄膜晶体管的制造方法和具有有机薄膜晶体管的显示装置。
解决方案：栅绝缘膜包括有机高分子聚合物，其表面算术平均粗糙度Ra≤10nm，具有小于1原子％的表面的非共享电子对的元素的浓度。有机薄膜晶体管具有（a）有机半导体膜，（b）栅电极，（c）源电极，（d）漏电极和（e）有栅极绝缘膜的有机薄膜晶体管基质。有机薄膜晶体管的制造方法具有通过将有机聚合物溶解在溶剂中来制备溶液的方法和通过在将溶液浇铸在基材上之后除去溶剂来形成栅极绝缘膜的工艺。显示装置具有有机薄膜晶体管。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2000075477A Positive resist composition 审中-公开
标题翻译：积极抵抗组成
公开(公告)号：JP2000075477A
公开(公告)日：2000-03-14
申请号：JP24756298
申请日：1998-09-01
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： KATO TAKEYOSHI , ABE NOBUNORI
IPC分类号： H01L21/027 , G03F7/004 , G03F7/022
摘要： PROBLEM TO BE SOLVED: To form a good pattern of high resolution and high contrast by electron beams and to obtain high film remaining rate and dimensional controlling property by incorporating an alkali-soluble resin, quinonediazide sulfonic acid ester compd. and specified org. acid polycyclic aromatic ester compd.
SOLUTION: This compsn. contains an alkali-soluble resin, quinonediazide sulfonic acid ester compd. and aromatic ester compd. having ester structure- contg. aromatic groups expressed by the formula. In the formula, R' and R" are independently hydrogen atoms or 1-6C alkyl groups, R is independently a hydrogen atom, 1-6C alkyl group or alkoxy group which may be branched, 2-7C alkenyl group, aryl group or aryloxy group which may be branched, X is a halogen atom, nitro group or cyano group, and p, q satisfy 0
摘要翻译：要解决的问题：为了通过电子束形成高分辨率和高对比度的良好图案，并且通过引入碱溶性树脂，醌二叠氮化物磺酸酯化合物获得高膜残留率和尺寸控制性能。并指定组织。酸多环芳烃酯解决方案：这个compsn。含有碱溶性树脂，醌二叠氮化物磺酸酯。和芳族酯化合物具有酯结构 - 由式表示的芳族基团。在式中，R'和R“独立地为氢原子或1-6C烷基，R独立地为氢原子，可以是支链的1-6C烷基或烷氧基，2-7C烯基，芳基或芳氧基可以是支链的基团，X是卤素原子，硝基或氰基，p，q满足0

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