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    • 1. 发明申请
    • Mounting apparatus and method for accurately positioning and aligning a leadless semiconductor chip on an associated header
    • 用于在相关的头部上精确地定位和对准无引线半导体芯片的安装装置和方法
    • US20090313797A1
    • 2009-12-24
    • US12288363
    • 2008-10-20
    • Anthony D. KurtzAlexander NedScott Goodman
    • Anthony D. KurtzAlexander NedScott Goodman
    • H01L21/00
    • G01L19/0084Y10T29/41
    • There is disclosed a method and apparatus for mounting a leadless semiconductor chip on a header. The semiconductor chip has contacts on a surface and the chip is of a specified geometric shape. The header has a contact surface for receiving the chip with the contact surface of the header containing header contact pins, which pins have to contact the contacts on the semiconductor chip. The header has a guide pin extending from the contact surface and there is a guide plate which has an aperture adapted to be placed over the guide pin, the guide plate further has a chip accommodating aperture of the same geometric shape as the chip. The guide plate, when placed over the guide pin enables the chip to be placed in the chip accommodating aperture so that the contacts of the header pin are properly and accurately aligned with respect to the contacts on the semiconductor chip.
    • 公开了一种将无引线半导体芯片安装在集管上的方法和装置。 半导体芯片在表面上具有触点,并且芯片具有指定的几何形状。 集管具有用于接收芯片的接触表面,其中插头的接触表面包含插座接头引脚,该引脚必须与半导体芯片上的触点接触。 集管具有从接触表面延伸的引导销,并且存在具有适于放置在引导销上方的孔的引导板,引导板还具有与芯片相同的几何形状的芯片容纳孔。 引导板当放置在引导销上时,可以将芯片放置在芯片容纳孔中,使得插头引脚的触点相对于半导体芯片上的触点正确且精确地对准。
    • 2. 发明授权
    • Mounting apparatus and method for accurately positioning and aligning a leadless semiconductor chip on an associated header
    • 用于在相关的头部上精确地定位和对准无引线半导体芯片的安装装置和方法
    • US07874216B2
    • 2011-01-25
    • US12288363
    • 2008-10-20
    • Anthony D. KurtzAlexander NedScott Goodman
    • Anthony D. KurtzAlexander NedScott Goodman
    • G01L13/02
    • G01L19/0084Y10T29/41
    • There is disclosed a method and apparatus for mounting a leadless semiconductor chip on a header. The semiconductor chip has contacts on a surface and the chip is of a specified geometric shape. The header has a contact surface for receiving the chip with the contact surface of the header containing header contact pins, which pins have to contact the contacts on the semiconductor chip. The header has a guide pin extending from the contact surface and there is a guide plate which has an aperture adapted to be placed over the guide pin, the guide plate further has a chip accommodating aperture of the same geometric shape as the chip. The guide plate, when placed over the guide pin enables the chip to be placed in the chip accommodating aperture so that the contacts of the header pin are properly and accurately aligned with respect to the contacts on the semiconductor chip.
    • 公开了一种将无引线半导体芯片安装在集管上的方法和装置。 半导体芯片在表面上具有触点,并且芯片具有指定的几何形状。 集管具有用于接收芯片的接触表面,其中插头的接触表面包含插座接头引脚,该引脚必须与半导体芯片上的触点接触。 集管具有从接触表面延伸的引导销,并且存在具有适于放置在引导销上方的孔的引导板,引导板还具有与芯片相同的几何形状的芯片容纳孔。 引导板当放置在引导销上时,可以将芯片放置在芯片容纳孔中,使得插头引脚的触点相对于半导体芯片上的触点正确且精确地对准。
    • 3. 发明授权
    • Ultra thin surface mount wafer sensor structures and methods for fabricating same
    • 超薄表面贴装晶片传感器结构及其制造方法
    • US06210989B1
    • 2001-04-03
    • US09398969
    • 1999-09-17
    • Anthony D. KurtzAlexander NedScott J. Goodman
    • Anthony D. KurtzAlexander NedScott J. Goodman
    • H01L2720
    • G01L9/0055G01L19/0084
    • There is disclosed a semiconductor sensor device comprising a semiconductor diaphragm member having a top surface coated with an oxide layer; P+ sensor elements fusion bonded to the oxide layer at a relatively central area of the diaphragm; P+ finger elements fusion bonded to the oxide layer extending from the sensors to an outer contact location of the diaphragm for each finger; and an external rim of P+ material fusion bonded to the oxide layer and surrounding the sensors and fingers. A first glass wafer member is electrostatically bonded at a bottom surface to the fingers and rim to hermetically seal the sensors and fingers of the diaphragm member. The first glass wafer includes a depression above the sensors and has a plurality of apertures, where each aperture is associated with a separate finger at the contact location and each aperture being smaller than the associated finger lining up with the contact location wherein each contact location can be accessed via the associated aperture in the first glass wafer member. A second glass wafer member is sealingly coupled to a top surface of the first glass wafer and has a plurality of apertures aligned with the plurality of apertures of the first glass wafer member and containing a group of hermetically sealed pins for coupling to the contact locations.
    • 公开了一种半导体传感器装置,其包括具有涂覆有氧化物层的顶表面的半导体隔膜部件; P +传感器元件在隔膜的相对中心区域处熔合到氧化物层; P +手指元件融合到从传感器延伸到每个手指的隔膜的外部接触位置的氧化物层; 并且P +材料的外缘融合到氧化物层并且围绕传感器和手指。 第一玻璃晶片构件在底面处与手指和边缘静电结合,以气密地密封隔膜构件的传感器和手指。 第一玻璃晶片包括在传感器上方的凹陷部,并且具有多个孔,其中每个孔与接触位置处的单独手指相关联,并且每个孔小于相关联的手指与接触位置对齐,其中每个接触位置可以 通过第一玻璃晶片构件中的相关孔径进入。 第二玻璃晶片构件密封地联接到第一玻璃晶片的顶表面,并且具有与第一玻璃晶片构件的多个孔对准的多个孔,并且包含一组用于联接到接触位置的密封销。
    • 5. 发明授权
    • Method and apparatus for preventing catastrophic contact failure in ultra high temperature piezoresistive sensors and transducers
    • 用于防止超高压压阻传感器和换能器中的灾难性接触故障的方法和装置
    • US08497757B2
    • 2013-07-30
    • US12686990
    • 2010-01-13
    • Anthony D. KurtzAlexander Ned
    • Anthony D. KurtzAlexander Ned
    • G01L1/22
    • G01L1/18C03C27/044G01L1/2287G01L9/0042G01L9/0054G01L19/0069G01L19/0084Y10T156/10
    • A piezoresistive sensor device and a method for making a piezoresistive device are disclosed. The sensor device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The sensor device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The sensor device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making a piezoresistive sensor device, comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the piezoresistive sensor and associated transducer in ultra high temperature applications.
    • 公开了压阻传感器装置和制造压阻器件的方法。 传感器装置包括具有压阻元件和与元件电连通的触点的硅晶片。 所述传感器装置还包括接触玻璃,所述接触玻璃联接到所述硅晶片并且具有与所述触点对准的孔。 传感器装置还包括用于将接触玻璃安装到集管玻璃的非导电玻璃料,以及设置在孔中并与触头电连通的导电非铅玻璃料。 用于制造压阻传感器装置的方法包括将接触玻璃接合到硅晶片,使得玻璃中的孔与晶片上的触点对齐,并用非铅玻璃料填充孔,使得玻璃料处于电 与联系人沟通。 使用无铅玻璃料防止压敏传感器和相关传感器在超高温应用中的灾难性故障。
    • 6. 发明授权
    • Ultra thin surface mount wafer sensor structures and methods for
fabricating same
    • 超薄表面贴装晶片传感器结构及其制造方法
    • US5973590A
    • 1999-10-26
    • US41228
    • 1998-03-12
    • Anthony D. KurtzAlexander NedScott J. Goodman
    • Anthony D. KurtzAlexander NedScott J. Goodman
    • H01C10/10H01L27/20
    • G01L9/0055G01L19/0084
    • A semiconductor sensor device including a semiconductor diaphragm member having a top surface coated with an oxide layer; P+ sensor elements fusion bonded to the oxide layer at a relatively central area of the diaphragm; P+ finger elements fusion bonded to the oxide layer extending from the sensors to an outer contact location of the diaphragm for each finger; and an external rim of P+ material fusion bonded to the oxide layer and surrounding the sensors and fingers. A first glass wafer member is electrostatically bonded at a bottom surface to the fingers and rim to hermetically seal the sensors and fingers of the diaphragm member. The first glass wafer includes a depression above the sensors and has a plurality of apertures, where each aperture is associated with a separate finger at the contact location and each aperture being smaller than the associated finger lining up with the contact location wherein each contact location can be accessed via the associated aperture in the first glass wafer member. A second glass wafer member is sealingly coupled to a top surface of the first glass wafer and has a plurality of apertures aligned with the plurality of apertures of the first glass wafer member and containing a group of hermetically sealed pins for coupling to the contact locations.
    • 一种半导体传感器装置,包括具有涂覆有氧化物层的顶表面的半导体隔膜部件; P +传感器元件在隔膜的相对中心区域处熔合到氧化物层; P +手指元件融合到从传感器延伸到每个手指的隔膜的外部接触位置的氧化物层; 并且P +材料的外缘融合到氧化物层并且围绕传感器和手指。 第一玻璃晶片构件在底面处与手指和边缘静电结合,以气密地密封隔膜构件的传感器和手指。 第一玻璃晶片包括在传感器上方的凹陷部,并且具有多个孔,其中每个孔与接触位置处的单独手指相关联,并且每个孔小于相关联的手指与接触位置对齐,其中每个接触位置可以 通过第一玻璃晶片构件中的相关孔径进入。 第二玻璃晶片构件密封地联接到第一玻璃晶片的顶表面,并且具有与第一玻璃晶片构件的多个孔对准的多个孔,并且包含一组用于联接到接触位置的密封销。
    • 7. 发明授权
    • Hermetically sealed transducers and methods for producing the same
    • 密封式传感器及其制造方法
    • US5891751A
    • 1999-04-06
    • US711078
    • 1996-09-09
    • Anthony D. KurtzAlexander Ned
    • Anthony D. KurtzAlexander Ned
    • B81B7/00G01L9/00H01L21/465
    • B81B7/0077G01L9/0055Y10S148/012Y10T29/42
    • A reduced size, hermetically sealed semiconductor transducer and methods for fabricating the same. In a preferred embodiment, the transducer comprises a transducer wafer including a diaphragm which deflects upon the application of a force thereto. At least one semiconductor transducer element and one electrical contact are disposed on a top surface of the transducer wafer, with the electrical contact coupled to the semiconductor element and extending to a peripheral portion of the wafer. A cover member is provided that is dimensioned to surround the semiconductor element. A peripheral glass frit bond is formed between the cover member and the transducer wafer, and between the cover member and at least a portion of the electrical contact. An aperture is formed in a top portion of the cover member, positioned above a region bounded by the peripheral glass bond. This aperture functions to prevent air gap formation in the peripheral glass frit bond. A sealing member hermetically seals the aperture, whereby a vacuum is maintained between the transducer element and the cover member, the transducer element thereby being hermetically sealed from the external environment, while at least a portion of the electrical contact remains exposed to enable subsequent wire bonding thereto.
    • 尺寸减小,密封的半导体换能器及其制造方法。 在优选实施例中,换能器包括换能器晶片,其包括在施加力时偏转的隔膜。 至少一个半导体换能器元件和一个电触点设置在换能器晶片的顶表面上,其中电触点耦合到半导体元件并延伸到晶片的周边部分。 设置有围绕半导体元件的盖构件。 在盖构件和换能器晶片之间以及在盖构件和至少一部分电接触件之间形成周边玻璃料接合。 在盖构件的顶部形成有孔,位于由周边玻璃接合界定的区域的上方。 该孔用于防止外围玻璃料接合中的气隙形成。 密封构件气密地密封孔,由此在换能器元件和盖构件之间保持真空,因此换能器元件与外部环境气密密封,同时电触点的至少一部分保持暴露以使得能够接下来的引线键合 到此。
    • 8. 发明授权
    • Hermetically sealed transducer and methods for producing the same
    • 密封式传感器及其制造方法
    • US06326682B1
    • 2001-12-04
    • US09217877
    • 1998-12-21
    • Anthony D. KurtzAlexander Ned
    • Anthony D. KurtzAlexander Ned
    • H01L2302
    • B81B7/0077B81B2201/0264B81B2203/0127B81B2203/0315B81C1/00269B81C2203/0181
    • A reduced size, hermetically sealed semiconductor transducer and methods for fabricating the same. In a preferred embodiment, the transducer comprises a transducer wafer including a diaphragm which deflects upon the application of a force thereto. At least one semiconductor transducer element and one electrical contact are disposed on a top surface of the transducer wafer, with the electrical contact coupled to the semiconductor element and extending to a peripheral portion of the wafer. A cover member is provided that is dimensioned to surround the semiconductor element. A peripheral glass frit bond is formed between the cover member and the transducer wafer, and between the cover member and at least a portion of the electrical contact. An aperture is formed in a top portion of the cover member, positioned above a region bounded by the peripheral glass bond. This aperture functions to prevent air gap formation in the peripheral glass frit bond. A sealing member hermetically seals the aperture, whereby a vacuum is maintained between the transducer element and the cover member, the transducer element thereby being hermetically sealed from the external environment, while at least a portion of the electrical contact remains exposed to enable subsequent wire bonding thereto.
    • 尺寸减小,密封的半导体换能器及其制造方法。 在优选实施例中,换能器包括换能器晶片,其包括在施加力时偏转的隔膜。 至少一个半导体换能器元件和一个电触点设置在换能器晶片的顶表面上,其中电触点耦合到半导体元件并延伸到晶片的周边部分。 设置有围绕半导体元件的盖构件。 在盖构件和换能器晶片之间以及在盖构件和至少一部分电接触件之间形成周边玻璃料接合。 在盖构件的顶部形成有孔,位于由周边玻璃接合界定的区域的上方。 该孔用于防止外围玻璃料接合中的气隙形成。 密封构件气密地密封孔,由此在换能器元件和盖构件之间保持真空,因此换能器元件与外部环境气密密封,同时电触点的至少一部分保持暴露以使得能够接下来的引线键合 到此。
    • 9. 发明授权
    • Flat planar pressure transducer
    • 平面平面压力传感器
    • US08196476B2
    • 2012-06-12
    • US13022132
    • 2011-02-07
    • Anthony D. KurtzScott Goodman
    • Anthony D. KurtzScott Goodman
    • G01L9/06
    • G01L9/0054G01L19/0084G01L19/0627G01L19/0636Y10T29/49007
    • There is disclosed a flat planar pressure transducer which comprises a planar insulative substrate of a rectangular configuration. Disposed on the substrate is an array of conductive areas which extend from a contact terminal area of said substrate to an end of the substrate. There is a leadless sensor module positioned at said contact terminal area, with the contacts of said leadless sensor contacting contact terminals of said contact terminal area. The leadless sensor is enclosed by an enclosure which is coupled to the substrate and surrounds the sensor. The enclosure has a screen positioned on the top surface to prevent particles from entering or damaging the leadless sensor. The above-noted structure forms a very flat, compact pressure transducer which can be utilized in lieu of flex circuit type devices and provides greater mechanical stability as well as a more accurate output.
    • 公开了一种平面平面压力传感器,其包括矩形构造的平面绝缘衬底。 设置在基板上的是从所述基板的接触端子区域延伸到基板的端部的导电区域的阵列。 存在位于所述接触端子区域处的无引线传感器模块,所述无引线传感器的触点接触所述接触端子区域的接触端子。 无引线传感器由耦合到基板并围绕传感器的外壳封闭。 外壳具有位于顶部表面上的屏幕,以防止颗粒进入或损坏无铅传感器。 上述结构形成了非常平坦的紧凑型压力传感器,其可以用于代替柔性电路型装置,并且提供更大的机械稳定性以及更准确的输出。
    • 10. 发明申请
    • Flat planner pressure transducer
    • 平面压力传感器
    • US20100257938A1
    • 2010-10-14
    • US12386096
    • 2009-04-14
    • Anthony D. KurtzScott Goodman
    • Anthony D. KurtzScott Goodman
    • G01L9/06
    • G01L9/0054G01L19/0084G01L19/0627G01L19/0636Y10T29/49007
    • There is disclosed flat planar pressure transducer which comprises a planar insulative substrate of a rectangular configuration. Disposed on the substrate is an array of conductive areas which extend from a contact terminal area of said substrate to an end of the substrate. There is a leadless sensor module positioned at said contact terminal area, with the contacts of said leadless sensor contacting contact terminals of said contact terminal area. The leadless sensor is enclosed by an enclosure which is coupled to the substrate and surrounds the sensor. The enclosure has a screen positioned on the top surface to prevent particles from entering or damaging the leadless sensor. The above-noted structure forms a very flat, compact pressure transducer which can be utilized in lieu of flex circuit type devices and provides greater mechanical stability as well as a more accurate output.
    • 公开了平面平面压力传感器,其包括矩形构造的平面绝缘衬底。 设置在基板上的是从所述基板的接触端子区域延伸到基板的端部的导电区域的阵列。 存在位于所述接触端子区域处的无引线传感器模块,所述无引线传感器的触点接触所述接触端子区域的接触端子。 无引线传感器由耦合到基板并围绕传感器的外壳封闭。 外壳具有位于顶部表面上的屏幕,以防止颗粒进入或损坏无铅传感器。 上述结构形成了非常扁平的紧凑的压力传感器,其可以用于代替柔性电路型装置,并且提供更大的机械稳定性以及更准确的输出。