专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08794010B2 Laser cooling of modified SOI wafer 有权
标题翻译：改性SOI晶片的激光冷却
公开(公告)号：US08794010B2
公开(公告)日：2014-08-05
申请号：US12966394
申请日：2010-12-13
申请人： David L. Williams , Andrew Clark , Michael Lebby
发明人： David L. Williams , Andrew Clark , Michael Lebby
IPC分类号： H01S3/30 , H01S3/034 , F25B23/00 , F25B21/00
CPC分类号： H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling.
摘要翻译：激光冷却系统包括基板，包括位于基板表面上的至少一个稀土元素的单晶稀土氧化物的REO层和位于REO层上以形成半导体的单晶半导体材料的有源层绝缘体（SOI）器件。导光结构至少部分地由REO层形成，以便将能量元素引入REO层并通过反斯托克斯荧光产生冷却。单晶半导体材料的有源层位于靠近导光结构的REO层上，以便接收冷却。

2. 发明授权

US08664735B2 IR sensor using REO up-conversion 有权
标题翻译： IR传感器采用REO上转换
公开(公告)号：US08664735B2
公开(公告)日：2014-03-04
申请号：US13053285
申请日：2011-03-22
申请人： Erdem Arkun , Rytis Dargis , Andrew Clark , David L. Williams
发明人： Erdem Arkun , Rytis Dargis , Andrew Clark , David L. Williams
IPC分类号： H01L31/0232 , H01L31/055
CPC分类号： H01L31/02322 , G01J1/58 , G01J5/20 , H01L31/02327 , H01L31/103 , Y02E10/52
摘要： A pumped sensor system includes a substrate with a first layer formed thereon and doped for a first type conduction and a second layer doped for a second type conduction, whereby the first and second layers form a silicon light detector at an up-conversion wavelength. A ternary rare earth oxide is formed on the second layer and crystal lattice matched to the second layer. The oxide is a crystalline bulk oxide with a controlled percentage of an up-conversion component and a majority component. The majority component is insensitive to any of pump, sense, or up-conversion wavelengths and the up-conversion component is selected to produce energy at the up-conversion wavelength in response to receiving energy at the pump and sense wavelengths. The layer of oxide defines a light input area sensitive to a pump wavelength and a light input area sensitive to a sense wavelength.
摘要翻译：泵送传感器系统包括其上形成有第一层并且被掺杂用于第一类型传导的第一层和掺杂用于第二类型传导的第二层的衬底，由此第一和第二层以上转换波长形成硅光检测器。在第二层上形成三元稀土氧化物，并且与第二层匹配的晶格。氧化物是具有受控百分比的上转换组分和多数组分的结晶体氧化物。大多数组件对泵，感测或上转换波长中的任何一个不敏感，并且上转换组件被选择为响应于在泵处的接收能量和感测波长而在上转换波长处产生能量。氧化物层限定对泵浦波长敏感的光输入区域和对感测波长敏感的光输入区域。

3. 发明授权

US08559097B2 Integrated pump laser and rare earth waveguide amplifier 有权
标题翻译：集成泵激光和稀土波导放大器
公开(公告)号：US08559097B2
公开(公告)日：2013-10-15
申请号：US12840538
申请日：2010-07-21
申请人： David L. Williams , Andrew Clark , Michael Lebby
发明人： David L. Williams , Andrew Clark , Michael Lebby
IPC分类号： H01S3/091 , H01S5/02
CPC分类号： H01S3/0632 , H01S3/0635 , H01S3/0637 , H01S3/0941 , H01S3/09415 , H01S3/1603 , H01S5/0207 , H01S5/0218 , H01S5/026 , H01S5/183 , H01S5/32341 , H01S5/42
摘要： A light amplifier includes a single crystal semiconductor substrate with a rare earth oxide, light amplifying gain medium deposited on the substrate and formed into a light waveguide, and a pump laser. A lattice matching virtual substrate integrates the pump laser to the gain medium with a first opposed surface crystal lattice matched to the gain medium and second opposed surface crystal lattice matched to the pump laser. The pump laser is positioned with a light output surface coupled to a light input surface of the gain medium so as to introduce pump energy into the light waveguide. The light amplifier has a very small footprint and allows the integration of control and monitoring electronics.
摘要翻译：光放大器包括具有稀土氧化物的单晶半导体衬底，沉积在衬底上并形成光波导的光放大增益介质和泵浦激光器。晶格匹配虚拟衬底将泵浦激光器与增益介质集成，其具有与与激光器匹配的增益介质和第二相对表面晶格匹配的第一相对表面晶格。泵浦激光器定位成具有耦合到增益介质的光输入表面的光输出表面，以将泵浦能量引入到光波导中。光放大器占地面积很小，可以集成控制和监控电子产品。

4. 发明申请

US20120019902A1 INTERGRATED PUMP LASER AND RARE EARTH WAVEGUIDE AMPLIFIER 有权
标题翻译：互动泵激光器和稀土波导放大器
公开(公告)号：US20120019902A1
公开(公告)日：2012-01-26
申请号：US12840538
申请日：2010-07-21
申请人： David L. Williams , Andrew Clark , Michael Lebby
发明人： David L. Williams , Andrew Clark , Michael Lebby
IPC分类号： H01S3/00 , H01L21/30
CPC分类号： H01S3/0632 , H01S3/0635 , H01S3/0637 , H01S3/0941 , H01S3/09415 , H01S3/1603 , H01S5/0207 , H01S5/0218 , H01S5/026 , H01S5/183 , H01S5/32341 , H01S5/42
摘要： A light amplifier includes a single crystal semiconductor substrate with a rare earth oxide, light amplifying gain medium deposited on the substrate and formed into a light waveguide, and a pump laser. A lattice matching virtual substrate integrates the pump laser to the gain medium with a first opposed surface crystal lattice matched to the gain medium and second opposed surface crystal lattice matched to the pump laser. The pump laser is positioned with a light output surface coupled to a light input surface of the gain medium so as to introduce pump energy into the light waveguide. The light amplifier has a very small footprint and allows the integration of control and monitoring electronics.
摘要翻译：光放大器包括具有稀土氧化物的单晶半导体衬底，沉积在衬底上并形成光波导的光放大增益介质和泵浦激光器。晶格匹配虚拟衬底将泵浦激光器与增益介质集成，其具有与与激光器匹配的增益介质和第二相对表面晶格匹配的第一相对表面晶格。泵浦激光器定位成具有耦合到增益介质的光输入表面的光输出表面，以将泵浦能量引入到光波导中。光放大器占地面积很小，可以集成控制和监控电子产品。

5. 发明申请

US20110278464A1 RADIATION DETECTOR AND FABRICATION PROCESS 有权
标题翻译：辐射探测器和制造工艺
公开(公告)号：US20110278464A1
公开(公告)日：2011-11-17
申请号：US12779355
申请日：2010-05-13
申请人： Andrew Clark , David L. Williams
发明人： Andrew Clark , David L. Williams
IPC分类号： G01T1/20 , H01L21/30 , G01T1/208
CPC分类号： G01T1/202 , G01T1/2018
摘要： A monolithic integrated radiation detector includes a photodetector and a scintillator deposited directly on the photodetector. Preferably the photodetector is silicon and the scintillator is a rare earth phosphor. The rare earth phosphor is crystal lattice matched to the silicon by a transitional layer epitaxially grown therebetween.
摘要翻译：单片集成放射线检测器包括直接沉积在光电检测器上的光电检测器和闪烁体。优选地，光电检测器是硅，闪烁体是稀土荧光体。稀土荧光体通过其间外延生长的过渡层与硅晶格匹配。

6. 发明申请

US20120147906A1 LASER COOLING OF MODIFIED SOI WAFER 有权
标题翻译：改性SOI硅片的激光冷却
公开(公告)号：US20120147906A1
公开(公告)日：2012-06-14
申请号：US12966394
申请日：2010-12-13
申请人： David L. Williams , Andrew Clark , Michael Lebby
发明人： David L. Williams , Andrew Clark , Michael Lebby
IPC分类号： H01S3/30 , H01L21/30
CPC分类号： H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling.
摘要翻译：激光冷却系统包括基板，包括位于基板表面上的至少一个稀土元素的单晶稀土氧化物的REO层和位于REO层上以形成半导体的单晶半导体材料的有源层绝缘体（SOI）器件。导光结构至少部分地由REO层形成，以便将能量元素引入REO层并通过反斯托克斯荧光产生冷却。单晶半导体材料的有源层位于靠近导光结构的REO层上，以便接收冷却。

7. 发明授权

US09360565B2 Radiation detector and fabrication process 有权
标题翻译：辐射探测器及制造工艺
公开(公告)号：US09360565B2
公开(公告)日：2016-06-07
申请号：US12779355
申请日：2010-05-13
申请人： Andrew Clark , David L. Williams
发明人： Andrew Clark , David L. Williams
IPC分类号： G01T1/26 , G01T1/202 , G01T1/20
CPC分类号： G01T1/202 , G01T1/2018
摘要： A monolithic integrated radiation detector includes a photodetector and a scintillator deposited directly on the photodetector. Preferably the photodetector is silicon and the scintillator is a rare earth phosphor. The rare earth phosphor is crystal lattice matched to the silicon by a transitional layer epitaxially grown therebetween.
摘要翻译：单片集成放射线检测器包括直接沉积在光电检测器上的光电检测器和闪烁体。优选地，光电检测器是硅，闪烁体是稀土荧光体。稀土荧光体通过其间外延生长的过渡层与硅晶格匹配。

8. 发明申请

US20120145243A1 SOLAR CELLS WITH MAGNETICALLY ENHANCED UP-CONVERSION 审中-公开
标题翻译：具有磁力增强上变换的太阳能电池
公开(公告)号：US20120145243A1
公开(公告)日：2012-06-14
申请号：US12965376
申请日：2010-12-10
申请人： David L. Williams , Andrew Clark , Michael Lebby
发明人： David L. Williams , Andrew Clark , Michael Lebby
IPC分类号： H01L31/02 , H01L31/0256
CPC分类号： H01L31/055 , G02F2/02 , H01L31/02322 , H01L31/0521 , Y02E10/52
摘要： A method of magnetically enhancing up-conversion components includes providing at least one of up-conversion material and sensitizer material (i.e. up-conversion components), generally in conjunction with a semiconductor solar cell, and positioning magnetic apparatus adjacent the up-conversion components to supply a magnetic field to the up-conversion components. The magnetic field has an intensity and direction selected to enhance operation of the up-conversion components.
摘要翻译：一种磁力增强上变频部件的方法包括提供一般与半导体太阳能电池结合的向上转换材料和敏化剂材料（即上转换部件）中的至少一种，以及将上转换部件相邻的磁性装置定位到向上转换部件提供磁场。磁场具有选择的强度和方向，以增强上转换部件的操作。

9. 发明申请

US20120241890A1 IR SENSOR USING REO UP-CONVERSION 有权
标题翻译： IR传感器使用REO UP转换
公开(公告)号：US20120241890A1
公开(公告)日：2012-09-27
申请号：US13053285
申请日：2011-03-22
申请人： Andrew Clark , Erdem Arkun , Rytis Dargis , David L. Williams
发明人： Andrew Clark , Erdem Arkun , Rytis Dargis , David L. Williams
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/02322 , G01J1/58 , G01J5/20 , H01L31/02327 , H01L31/103 , Y02E10/52
摘要： A pumped sensor system includes a substrate with a first layer formed thereon and doped for a first type conduction and a second layer doped for a second type conduction, whereby the first and second layers form a silicon light detector at an up-conversion wavelength. A ternary rare earth oxide is formed on the second layer and crystal lattice matched to the second layer. The oxide is a crystalline bulk oxide with a controlled percentage of an up-conversion component and a majority component. The majority component is insensitive to any of pump, sense, or up-conversion wavelengths and the up-conversion component is selected to produce energy at the up-conversion wavelength in response to receiving energy at the pump and sense wavelengths. The layer of oxide defines a light input area sensitive to a pump wavelength and a light input area sensitive to a sense wavelength.
摘要翻译：泵送传感器系统包括其上形成有第一层并且被掺杂用于第一类型传导的第一层和掺杂用于第二类型传导的第二层的衬底，由此第一和第二层以上转换波长形成硅光检测器。在第二层上形成三元稀土氧化物，并且与第二层匹配的晶格。氧化物是具有受控百分比的上转换组分和多数组分的结晶体氧化物。大多数组件对泵，感测或上转换波长中的任何一个不敏感，并且上转换组件被选择为响应于在泵处的接收能量和感测波长而在上转换波长处产生能量。氧化物层限定对泵浦波长敏感的光输入区域和对感测波长敏感的光输入区域。

10. 发明申请

US20160181093A1 III-N EPITAXY ON MULTILAYER BUFFER WITH PROTECTIVE TOP LAYER 审中-公开
标题翻译：具有保护顶层的多层缓冲层的III-N外延
公开(公告)号：US20160181093A1
公开(公告)日：2016-06-23
申请号：US14576500
申请日：2014-12-19
申请人： Rytis Dargis , Andrew Clark , Erdem Arkun , Nam Pham
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun , Nam Pham
IPC分类号： H01L21/02
CPC分类号： H01L21/02488 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02483 , H01L21/02505 , H01L21/02516 , H01L21/0254
摘要： A method of growing III-N material on a silicon substrate including the steps of epitaxially growing a buffer layer of REO material on a silicon substrate, epitaxially growing a layer of REN material on the surface of the buffer, and epitaxially growing a thin protective layer of REO on the surface of the REN material layer. The substrate and structure can then be conveniently transferred to another growth machine in which are performed the steps of transforming or modifying in-situ the REO protective layer to a REN layer with a nitrogen treatment and epitaxially growing a layer of III-N material on the modified protective layer.
摘要翻译：一种在硅衬底上生长III-N材料的方法，包括以下步骤：在硅衬底上外延生长REO材料的缓冲层，在衬底的表面上外延生长REN材料层，并外延生长薄的保护层的REO在REN材料层的表面上。底物和结构可以方便地转移到另一种生长机器中，其中进行以下步骤：将REO保护层原位转化或修饰为具有氮处理的REN层，并在其上外延生长III-N材料层改性保护层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式