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1. 发明授权

US09443939B2 Strain compensated REO buffer for III-N on silicon 有权
标题翻译：用于硅上III-N的应变补偿REO缓冲器
公开(公告)号：US09443939B2
公开(公告)日：2016-09-13
申请号：US14924047
申请日：2015-10-27
申请人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
IPC分类号： H01L29/20 , H01L29/06 , H01L29/16 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02532 , H01L21/0254 , H01L29/0657 , H01L29/16
摘要： A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.
摘要翻译：一种在硅晶片上制造稀土氧化物缓冲III-N的方法，包括提供晶体硅衬底，在包括一层或多层单晶稀土氧化物的硅衬底上沉积稀土氧化物结构，以及沉积单层在稀土氧化物结构上形成晶体III-N材料，以形成稀土氧化物结构和单晶III-N材料层之间的界面。单晶III-N材料层在界面处产生拉伸应力，并且稀土氧化物结构在界面处具有取决于稀土氧化物结构的厚度的压应力。生长稀土氧化物结构的厚度足以提供压缩应力，以抵消界面处的拉伸应力的至少一部分，从而基本上减少晶片中的弯曲。

2. 发明授权

US09142406B1 III-N material grown on ErAlN buffer on Si substrate 有权
标题翻译：在Si衬底上在ErAlN缓冲液上生长的III-N材料
公开(公告)号：US09142406B1
公开(公告)日：2015-09-22
申请号：US14269011
申请日：2014-05-02
申请人： Rytis Dargis , Andrew Clark , Nam Pham , Erdem Arkun
发明人： Rytis Dargis , Andrew Clark , Nam Pham , Erdem Arkun
IPC分类号： H01L21/20 , H01L21/02 , H01L29/20 , H01L29/205
CPC分类号： H01L21/0251 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/0254
摘要： III-N material grown on a buffer on a substrate that includes one of a single crystal silicon or a single crystal sapphire. A buffer of single crystal alloy, including one of ErxAl1-xN or (RE1yRE21-y)xAl1-xN, is positioned on the substrate. A layer of single crystal III-N material is positioned on the surface of the buffer and the single crystal alloy has a lattice constant substantially crystal lattice matched to the layer of single crystal III-N material. When the III-N material is GaN, the x in the formula for the alloy varies from less than 1 adjacent the substrate to greater than or equal to 0.249 adjacent the layer of single crystal GaN.
摘要翻译：在包括单晶硅或单晶蓝宝石中的一种的衬底上的缓冲器上生长的III-N材料。包括ErxAl1-xN或（RE1yRE21-y）xAl1-xN中的一种的单晶合金缓冲液位于基板上。一层单晶III-N材料位于缓冲层的表面上，单晶合金具有与单晶III-N材料层基本晶格匹配的晶格常数。当III-N材料为GaN时，合金配方中的x从衬底附近的小于1变化到大于或等于与单晶GaN层相邻的0.249。

3. 发明申请

US20150069409A1 HETEROSTRUCTURE WITH CARRIER CONCENTRATION ENHANCED BY SINGLE CRYSTAL REO INDUCED STRAINS 有权
标题翻译：单晶诱导应激增强载体浓度的结构
公开(公告)号：US20150069409A1
公开(公告)日：2015-03-12
申请号：US14487820
申请日：2014-09-16
申请人： Rytis Dargis , Andrew Clark , Erdem Arkun
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun
IPC分类号： H01L29/778 , H01L29/66 , H01L21/02 , H01L29/205 , H01L29/20
CPC分类号： H01L29/7783 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02505 , H01L21/02516 , H01L21/0254 , H01L29/2003 , H01L29/7787
摘要： A heterostructure grown on a silicon substrate includes a single crystal rare earth oxide template positioned on a silicon substrate, the template being substantially crystal lattice matched to the surface of the silicon substrate. A heterostructure is positioned on the template and defines at least one heterojunction at an interface between a III-N layer and a III-III-N layer. The template and the heterostructure are crystal matched to induce an engineered predetermined tensile strain at the at least one heterojunction. A single crystal rare earth oxide dielectric layer is grown on the heterostructure so as to induce an engineered predetermined compressive stress in the single crystal rare earth oxide dielectric layer and a tensile strain in the III-III-N layer. The tensile strain in the III-III-N layer and the compressive stress in the REO layer combining to induce a piezoelectric field leading to higher carrier concentration in 2DEG at the heterojunction.
摘要翻译：在硅衬底上生长的异质结构包括位于硅衬底上的单晶稀土氧化物模板，该模板基本上与硅衬底的表面晶格匹配。异质结构位于模板上并且在III-N层和III-III-N层之间的界面处限定至少一个异质结。模板和异质结构被晶体匹配以在至少一个异质结处诱导工程化的预定拉伸应变。在异质结构上生长单晶稀土氧化物电介质层，以在单晶稀土氧化物介电层中引起工程化的预定压应力，并在III-III-N层中引起拉伸应变。 III-III-N层中的拉伸应变和REO层中的压应力组合以诱导压电场，导致异质结中2DEG中的较高载流子浓度。

4. 发明申请

US20140225123A1 REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON 审中-公开
标题翻译： REO / ALO / AlN模板用于III-N材料在硅上的生长
公开(公告)号：US20140225123A1
公开(公告)日：2014-08-14
申请号：US14180079
申请日：2014-02-13
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L33/46 , H01L33/32 , H01L33/00
CPC分类号： H01L33/46 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L29/1075 , H01L29/2003 , H01L29/66462 , H01L29/7786 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A III-N template formed on a silicon substrate includes a Distributed Bragg Reflector positioned on the silicon substrate. The Distributed Bragg Reflector is substantially crystal lattice matched to the surface of the silicon substrate. An aluminum oxide layer is positioned on the surface of the Distributed Bragg Reflector and substantially crystal lattice matched to the surface of the Distributed Bragg Reflector. A layer of aluminum nitride (AlN) is positioned on the surface of the aluminum oxide layer and substantially crystal lattice matched to the surface of the aluminum oxide layer. A III-N LED structure including at least one III-N layer can then be grown on the aluminum nitride layer and substantially crystal lattice matched to the surface of the aluminum nitride layer.
摘要翻译：形成在硅衬底上的III-N模板包括位于硅衬底上的分布式布拉格反射器。分布布拉格反射器与硅衬底的表面基本上晶格匹配。一个氧化铝层位于分布式布拉格反射体的表面上，并且基本上与分布式布拉格反射器表面匹配的晶格。一层氮化铝（AlN）位于氧化铝层的表面上，并且与氧化铝层的表面基本上晶格匹配。然后可以在氮化铝层上生长包括至少一个III-N层的III-N LED结构，并且基本上与氮化铝层的表面匹配的晶格。

5. 发明授权

US08636844B1 Oxygen engineered single-crystal REO template 有权
标题翻译：氧气工程单晶REO模板
公开(公告)号：US08636844B1
公开(公告)日：2014-01-28
申请号：US13543093
申请日：2012-07-06
申请人： Rytis Dargis , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Andrew Clark , Michael Lebby
IPC分类号： C30B25/00
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/02502 , H01L21/02521
摘要： A method of forming a template on a silicon substrate includes epitaxially growing a template of single crystal ternary rare earth oxide on a silicon substrate and epitaxially growing a single crystal semiconductor active layer on the template. The active layer has either a cubic or a hexagonal crystal structure. During the epitaxial growth of the template, a partial pressure of oxygen is selected and a ratio of metals included in the ternary rare earth oxide is selected to match crystal spacing and structure of the template at a lower interface to the substrate and to match crystal spacing and structure of the template at an upper interface to crystal spacing and structure of the semiconductor active layer. A high oxygen partial pressure during growth of the template produces a stabilized cubic crystal structure and a low oxygen partial pressure produces a predominant peak with a hexagonal crystal structure.
摘要翻译：在硅衬底上形成模板的方法包括在硅衬底上外延生长单晶三元稀土氧化物的模板，并在模板上外延生长单晶半导体活性层。有源层具有立方晶体或六方晶体结构。在模板的外延生长期间，选择氧的分压，并且选择包含在三元稀土氧化物中的金属的比例以在与衬底的较低界面处的模板的晶体间距和结构相匹配并且匹配晶体间距以及在半导体活性层的晶体间距和结构的上界面处的模板的结构。模板生长期间的高氧分压产生稳定的立方晶体结构，低氧分压产生具有六方晶系结构的主峰。

6. 发明授权

US09431526B2 Heterostructure with carrier concentration enhanced by single crystal REO induced strains 有权
标题翻译：通过单晶REO诱导的菌株增强载体浓度的异质结构
公开(公告)号：US09431526B2
公开(公告)日：2016-08-30
申请号：US14487820
申请日：2014-09-16
申请人： Rytis Dargis , Andrew Clark , Erdem Arkun
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun
IPC分类号： H01L29/778 , H01L29/78 , H01L29/20 , H01L21/02
CPC分类号： H01L29/7783 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02505 , H01L21/02516 , H01L21/0254 , H01L29/2003 , H01L29/7787
摘要： A heterostructure grown on a silicon substrate includes a single crystal rare earth oxide template positioned on a silicon substrate, the template being substantially crystal lattice matched to the surface of the silicon substrate. A heterostructure is positioned on the template and defines at least one heterojunction at an interface between a III-N layer and a III-III-N layer. The template and the heterostructure are crystal matched to induce an engineered predetermined tensile strain at the at least one heterojunction. A single crystal rare earth oxide dielectric layer is grown on the heterostructure so as to induce an engineered predetermined compressive stress in the single crystal rare earth oxide dielectric layer and a tensile strain in the III-III-N layer. The tensile strain in the III-III-N layer and the compressive stress in the REO layer combining to induce a piezoelectric field leading to higher carrier concentration in 2DEG at the heterojunction.
摘要翻译：在硅衬底上生长的异质结构包括位于硅衬底上的单晶稀土氧化物模板，该模板基本上与硅衬底的表面晶格匹配。异质结构位于模板上并且在III-N层和III-III-N层之间的界面处限定至少一个异质结。模板和异质结构被晶体匹配以在至少一个异质结处诱导工程化的预定拉伸应变。在异质结构上生长单晶稀土氧化物电介质层，以在单晶稀土氧化物介电层中引起工程化的预定压应力，并在III-III-N层中引起拉伸应变。 III-III-N层中的拉伸应变和REO层中的压应力组合以诱导压电场，导致异质结中2DEG中的较高载流子浓度。

7. 发明授权

US09139934B2 REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate 有权
标题翻译：在Si衬底上在REAIN / REO缓冲液上外延生长的REN半导体层
公开(公告)号：US09139934B2
公开(公告)日：2015-09-22
申请号：US14161925
申请日：2014-01-23
申请人： Rytis Dargis , Robin Smith , Andrew Clark
发明人： Rytis Dargis , Robin Smith , Andrew Clark
IPC分类号： H01L31/0256 , H01L21/00 , H01L21/84 , H01L21/20 , H01L21/36 , C30B29/22 , C30B25/18 , C30B29/40 , C30B29/38 , H01L29/20 , H01L21/02
CPC分类号： C30B29/22 , C30B25/183 , C30B29/16 , C30B29/38 , C30B29/403 , C30B29/406 , H01L21/02293 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02483 , H01L21/02502 , H01L21/02505 , H01L21/02521 , H01L21/0254 , H01L29/24 , H01L33/26
摘要： Rare earth semiconductor and ferromagnetic material epitaxially grown on a silicon substrate includes a buffer of single crystal epitaxial rare earth/aluminum nitride positioned on a single crystal silicon substrate and a single crystal epitaxial rare earth oxide positioned on the single crystal epitaxial aluminum nitride. A layer of single crystal epitaxial semiconductor and ferromagnetic rare earth nitride is positioned on the buffer. A layer of III-V semiconductive material may be optionally positioned on the rare earth nitride layer.
摘要翻译：外延生长在硅衬底上的稀土半导体和铁磁材料包括位于单晶硅衬底上的单晶外延稀土/氮化铝的缓冲器和位于单晶外延氮化铝上的单晶外延稀土氧化物。一层单晶外延半导体和铁磁稀土氮化物位于缓冲器上。 III-V族半导体材料层可以任选地位于稀土氮化物层上。

8. 发明授权

US08994032B2 III-N material grown on ErAIN buffer on Si substrate 有权
标题翻译：在Si衬底上的ErAIN缓冲液上生长的III-N材料
公开(公告)号：US08994032B2
公开(公告)日：2015-03-31
申请号：US13784568
申请日：2013-03-04
申请人： Erdem Arkun , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Andrew Clark , Rytis Dargis
IPC分类号： H01L29/36 , H01L29/20 , H01L21/02 , H01L29/201 , H01L29/207 , H01L29/778
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/201 , H01L29/207 , H01L29/778
摘要： III-N material grown on a buffer on a silicon substrate includes a single crystal electrically insulating buffer positioned on a silicon substrate. The single crystal buffer includes rare earth aluminum nitride substantially crystal lattice matched to the surface of the silicon substrate, i.e. a lattice co-incidence between REAlN and Si better than a 5:4 ratio. A layer of single crystal III-N material is positioned on the surface of the buffer and substantially crystal lattice matched to the surface of the buffer.
摘要翻译：在硅衬底上在缓冲器上生长的III-N材料包括位于硅衬底上的单晶电绝缘缓冲器。单晶缓冲器包括与硅衬底的表面匹配的基本上晶格的稀土氮化铝，即REAN和Si之间的晶格共同比优于5:4的比例。一层单晶III-N材料位于缓冲器的表面上，并且基本上与晶体表面匹配的晶格。

9. 发明申请

US20150014676A1 III-N MATERIAL GROWN ON REN EPITAXIAL BUFFER ON Si SUBSTRATE 有权
标题翻译： III-N材料在Si衬底上的外部保护层上
公开(公告)号：US20150014676A1
公开(公告)日：2015-01-15
申请号：US13939721
申请日：2013-07-11
申请人： Rytis Dargis , Robin Smith , Andrew CLark , Erdem Arkun , Michael Lebby
发明人： Rytis Dargis , Robin Smith , Andrew CLark , Erdem Arkun , Michael Lebby
IPC分类号： H01L21/02
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/02502 , H01L21/0254
摘要： A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.
摘要翻译：在硅衬底上生长III-N材料的方法包括以下步骤：在硅衬底上外延生长单晶稀土氧化物，在单晶稀土氧化物上外延生长单晶稀土氮化物，并外延生长层的单晶III-N材料在单晶稀土氮化物上。

10. 发明授权

US08878188B2 REO gate dielectric for III-N device on Si substrate 有权
标题翻译：用于Si衬底上III-N器件的REO栅极电介质
公开(公告)号：US08878188B2
公开(公告)日：2014-11-04
申请号：US13774962
申请日：2013-02-22
申请人： Rytis Dargis , Robin Smith , Andrew Clark , Erdem Arkun , Michael Lebby
发明人： Rytis Dargis , Robin Smith , Andrew Clark , Erdem Arkun , Michael Lebby
IPC分类号： H01L29/51 , H01L29/20 , H01L21/02
CPC分类号： H01L21/02192 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02505 , H01L21/02516 , H01L21/0254 , H01L29/2003 , H01L29/7787
摘要： A rare earth oxide gate dielectric on III-N material grown on a silicon substrate includes a single crystal stress compensating template positioned on a silicon substrate. The stress compensating template is substantially crystal lattice matched to the surface of the silicon substrate. A GaN structure is positioned on the surface of the stress compensating template and substantially crystal lattice matched thereto. An active layer of single crystal III-N material is grown on the GaN structure and substantially crystal lattice matched thereto. A single crystal rare earth oxide dielectric layer is grown on the active layer of III-N material.
摘要翻译：在硅衬底上生长的III-N材料上的稀土氧化物栅极电介质包括位于硅衬底上的单晶应力补偿模板。应力补偿模板基本上与硅衬底的表面晶格匹配。 GaN结构位于应力补偿模板的表面上并且与其基本上晶格匹配。在GaN结构上生长单晶III-N材料的活性层，并且与其基本上晶格匹配。在III-N材料的有源层上生长单晶稀土氧化物介电层。

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