专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08835955B2 IIIOxNy on single crystal SOI substrate and III n growth platform 有权
标题翻译： IIIOxNy在单晶SOI衬底和IIIn生长平台上
公开(公告)号：US08835955B2
公开(公告)日：2014-09-16
申请号：US13221474
申请日：2011-08-30
申请人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
发明人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
IPC分类号： H01L33/60 , H01L29/786 , H01L33/00 , H01L29/78 , H01L21/762 , H01L21/02 , H01L33/12 , H01L33/46
CPC分类号： H01L21/76248 , H01L21/02381 , H01L21/02483 , H01L21/02488 , H01L21/02507 , H01L21/02532 , H01L29/7842 , H01L29/78603 , H01L33/007 , H01L33/12 , H01L33/46
摘要： A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIOxNy formed on the engineered single crystal silicon layer. In some embodiments the III material in the insulator layer includes more than on III material. In a preferred embodiment the single crystal rare earth oxide includes Gd2O3 and the single crystal insulator layer of IIIOxNy includes one of AlOxNy and AlGaOxNy.
摘要翻译：一种绝缘体上硅（SOI）衬底结构及其制造方法，包括单晶硅衬底，在衬底上形成的单晶稀土氧化物层，在单晶稀土层上形成的工程化单晶硅层在工程化的单晶硅层上形成IIIOxNy的单晶绝缘体层。在一些实施例中，绝缘体层中的III材料包括多于III族材料。在优选的实施方案中，单晶稀土氧化物包括Gd 2 O 3，并且IIIO x N y的单晶绝缘体层包括AlO x N y和AlGaO x N y之一。

2. 发明申请

US20140231818A1 AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE 有权
标题翻译： GaN / REO /硅衬底结构上的AlN电极
公开(公告)号：US20140231818A1
公开(公告)日：2014-08-21
申请号：US13772169
申请日：2013-02-20
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L21/02 , H01L29/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L29/155 , H01L29/2003 , H01L29/778
摘要： III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer. A cap layer of AlN is grown on the final III-N layer and a III-N layer of material with one of an LED structure and an HEMT structure is grown on the AlN cap layer.
摘要翻译：在硅衬底上生长的III-N材料包括位于硅衬底上的单晶稀土氧化物层。稀土氧化物与硅衬底的表面基本上晶格匹配。第一层III-N材料位于稀土氧化物层的表面上。氮化铝（AlN）的层间位于III-N材料的第一层的表面上，并且在氮化铝层间的表面上设置附加的III-N层。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。在最终的III-N层上生长AlN的覆盖层，并且在AlN覆盖层上生长具有LED结构和HEMT结构之一的III-N层材料。

3. 发明申请

US20140231817A1 III-N MATERIAL GROWN ON ALO/ALN BUFFER ON SI SUBSTRATE 有权
标题翻译： III-N材料在基板上的ALO / ALN缓冲器上
公开(公告)号：US20140231817A1
公开(公告)日：2014-08-21
申请号：US13772126
申请日：2013-02-20
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L29/205 , H01L21/02
CPC分类号： H01L29/205 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L29/778
摘要： III-N material grown on a silicon substrate includes a single crystal buffer positioned on a silicon substrate. The buffer is substantially crystal lattice matched to the surface of the silicon substrate and includes aluminum oxynitride adjacent the substrate and aluminum nitride adjacent the upper surface. A first layer of III-N material is positioned on the upper surface of the buffer. An inter-layer of aluminum nitride (AlN) is positioned on the first III-N layer and an additional layer of III-N material is positioned on the inter-layer. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
摘要翻译：在硅衬底上生长的III-N材料包括位于硅衬底上的单晶缓冲器。缓冲器基本上与硅衬底的表面晶格匹配，并且包括邻近衬底的氮氧化铝和与上表面相邻的氮化铝。第一层III-N材料位于缓冲器的上表面上。氮化铝（AlN）的层间位于第一III-N层上，并且在层之间设置附加的III-N材料层。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。

4. 发明授权

US08794010B2 Laser cooling of modified SOI wafer 有权
标题翻译：改性SOI晶片的激光冷却
公开(公告)号：US08794010B2
公开(公告)日：2014-08-05
申请号：US12966394
申请日：2010-12-13
申请人： David L. Williams , Andrew Clark , Michael Lebby
发明人： David L. Williams , Andrew Clark , Michael Lebby
IPC分类号： H01S3/30 , H01S3/034 , F25B23/00 , F25B21/00
CPC分类号： H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling.
摘要翻译：激光冷却系统包括基板，包括位于基板表面上的至少一个稀土元素的单晶稀土氧化物的REO层和位于REO层上以形成半导体的单晶半导体材料的有源层绝缘体（SOI）器件。导光结构至少部分地由REO层形成，以便将能量元素引入REO层并通过反斯托克斯荧光产生冷却。单晶半导体材料的有源层位于靠近导光结构的REO层上，以便接收冷却。

5. 发明授权

US08680507B1 A1N inter-layers in III-N material grown on DBR/silicon substrate 失效
标题翻译：在DBR /硅衬底上生长的III-N材料中的AlN层间
公开(公告)号：US08680507B1
公开(公告)日：2014-03-25
申请号：US13742612
申请日：2013-01-16
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L33/10 , H01L33/12 , H01L29/778
CPC分类号： H01L33/007 , H01L29/155 , H01L29/2003 , H01L29/7787 , H01L33/10 , H01L33/12 , H01L33/32
摘要： A DBR/gallium nitride/aluminum nitride base grown on a silicon substrate includes a Distributed Bragg Reflector (DBR) positioned on the silicon substrate. The DBR is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the DBR, an inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
摘要翻译：在硅衬底上生长的DBR /氮化镓/氮化铝基底包括位于硅衬底上的分布式布拉格反射器（DBR）。 DBR基本上与硅衬底的表面晶格匹配。第一层III-N材料位于DBR的表面上，氮化铝层（AlN）的层间位于III-N材料的第一层的表面上，并且附加的III-N材料层位于氮化铝层间的表面上。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。

6. 发明申请

US20140076390A1 III-V SEMICONDUCTOR INTERFACE WITH GRADED GeSn ON SILICON 有权
标题翻译： III-V半导体接口与等级的GeSn在硅上
公开(公告)号：US20140076390A1
公开(公告)日：2014-03-20
申请号：US13619605
申请日：2012-09-14
申请人： Radek Roucka , Michael Lebby , Scott Semans
发明人： Radek Roucka , Michael Lebby , Scott Semans
IPC分类号： H01L31/065 , H01L31/18
CPC分类号： H01L31/1852 , H01L31/0693 , Y02E10/544
摘要： A method of depositing III-V solar collection materials on a GeSn template on a silicon substrate including the steps of providing a crystalline silicon substrate and epitaxially growing a single crystal GeSn layer on the silicon substrate using a grading profile to grade Sn through the layer. The single crystal GeSn layer has a thickness in a range of approximately 3 μm to approximately 5 μm. A layer of III-V solar collection material is epitaxially grown on the graded single crystal GeSn layer. The graded single crystal GeSn layer includes Sn up to an interface with the layer of III-V solar collection material.
摘要翻译：一种在硅衬底上的GeSn模板上沉积III-V太阳能收集材料的方法，包括以下步骤：使用分级轮廓提供晶体硅衬底并在硅衬底上外延生长单晶GeSn层，以通过该层对Sn进行分级。单晶GeSn层的厚度在约3μm至约5μm的范围内。在等级单晶GeSn层上外延生长一层III-V太阳能收集材料。渐变的单晶GeSn层包括Sn到与III-V太阳能收集材料层的界面。

7. 发明申请

US20140053894A1 GRADED GeSn ON SILICON 审中-公开
标题翻译：硅胶上的GeSn
公开(公告)号：US20140053894A1
公开(公告)日：2014-02-27
申请号：US13593305
申请日：2012-08-23
申请人： Radek Roucka , Michael Lebby , Scott Semans
发明人： Radek Roucka , Michael Lebby , Scott Semans
IPC分类号： H01L31/0336 , H01L31/18 , H01L29/267 , H01L21/20
CPC分类号： H01L29/267 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L31/0687 , H01L31/0693 , H01L31/1852 , Y02E10/544
摘要： A method of fabricating a solar cell on a silicon substrate includes providing a crystalline silicon substrate, selecting a grading profile, epitaxially growing a template on the silicon substrate including a single crystal GeSn layer using the grading profile to grade Sn through the layer. The single crystal GeSn layer has a thickness in a range of approximately 3 μm to approximately 5 μm. At least two layers of high band gap material are epitaxially and sequentially grown on the template to form at least three junctions. The grading profile starts with the Sn at or near zero with the Ge at zero, the percentage of Sn varies to a maximum mid-area, and reduces the percentage of Sn to zero adjacent an upper surface.
摘要翻译：在硅衬底上制造太阳能电池的方法包括：提供晶体硅衬底，选择分级分布，使用分级分布在包括单晶GeSn层的硅衬底上外延生长模板，以通过该层对Sn进行分级。单晶GeSn层的厚度在约3μm至约5μm的范围内。外延至少两层高带隙材料，并在模板上顺序生长以形成至少三个结。分级轮廓从Sn处于零附近开始，其中Ge处于零处，Sn的百分比变化到最大中间区域，并且将Sn的百分比减小到与上表面相邻的零。

8. 发明申请

US20140008644A1 OXYGEN ENGINEERED SINGLE-CRYSTAL REO TEMPLATE 有权
标题翻译：氧气工程单晶REO模板
公开(公告)号：US20140008644A1
公开(公告)日：2014-01-09
申请号：US13543093
申请日：2012-07-06
申请人： Rytis Dargis , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Andrew Clark , Michael Lebby
IPC分类号： H01L29/38 , H01L21/20
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/02502 , H01L21/02521
摘要： A method of forming a template on a silicon substrate includes epitaxially growing a template of single crystal ternary rare earth oxide on a silicon substrate and epitaxially growing a single crystal semiconductor active layer on the template. The active layer has either a cubic or a hexagonal crystal structure. During the epitaxial growth of the template, a partial pressure of oxygen is selected and a ratio of metals included in the ternary rare earth oxide is selected to match crystal spacing and structure of the template at a lower interface to the substrate and to match crystal spacing and structure of the template at an upper interface to crystal spacing and structure of the semiconductor active layer. A high oxygen partial pressure during growth of the template produces a stabilized cubic crystal structure and a low oxygen partial pressure produces a predominant peak with a hexagonal crystal structure.
摘要翻译：在硅衬底上形成模板的方法包括在硅衬底上外延生长单晶三元稀土氧化物的模板，并在模板上外延生长单晶半导体活性层。有源层具有立方晶体或六方晶体结构。在模板的外延生长期间，选择氧的分压，并且选择包含在三元稀土氧化物中的金属的比例以在与衬底的较低界面处的模板的晶体间距和结构相匹配并且匹配晶体间距以及在半导体活性层的晶体间距和结构的上界面处的模板的结构。模板生长期间的高氧分压产生稳定的立方晶体结构，低氧分压产生具有六方晶系结构的主峰。

9. 发明授权

US08559097B2 Integrated pump laser and rare earth waveguide amplifier 有权
标题翻译：集成泵激光和稀土波导放大器
公开(公告)号：US08559097B2
公开(公告)日：2013-10-15
申请号：US12840538
申请日：2010-07-21
申请人： David L. Williams , Andrew Clark , Michael Lebby
发明人： David L. Williams , Andrew Clark , Michael Lebby
IPC分类号： H01S3/091 , H01S5/02
CPC分类号： H01S3/0632 , H01S3/0635 , H01S3/0637 , H01S3/0941 , H01S3/09415 , H01S3/1603 , H01S5/0207 , H01S5/0218 , H01S5/026 , H01S5/183 , H01S5/32341 , H01S5/42
摘要： A light amplifier includes a single crystal semiconductor substrate with a rare earth oxide, light amplifying gain medium deposited on the substrate and formed into a light waveguide, and a pump laser. A lattice matching virtual substrate integrates the pump laser to the gain medium with a first opposed surface crystal lattice matched to the gain medium and second opposed surface crystal lattice matched to the pump laser. The pump laser is positioned with a light output surface coupled to a light input surface of the gain medium so as to introduce pump energy into the light waveguide. The light amplifier has a very small footprint and allows the integration of control and monitoring electronics.
摘要翻译：光放大器包括具有稀土氧化物的单晶半导体衬底，沉积在衬底上并形成光波导的光放大增益介质和泵浦激光器。晶格匹配虚拟衬底将泵浦激光器与增益介质集成，其具有与与激光器匹配的增益介质和第二相对表面晶格匹配的第一相对表面晶格。泵浦激光器定位成具有耦合到增益介质的光输入表面的光输出表面，以将泵浦能量引入到光波导中。光放大器占地面积很小，可以集成控制和监控电子产品。

10. 发明申请

US20130248853A1 NUCLEATION OF III-N ON REO TEMPLATES 有权
标题翻译： III-N在REO模板上的核化
公开(公告)号：US20130248853A1
公开(公告)日：2013-09-26
申请号：US13845426
申请日：2013-03-18
申请人： Erdem Arkun , Andrew Clark , Rytis Dargis , Radek Roucka , Michael Lebby
发明人： Erdem Arkun , Andrew Clark , Rytis Dargis , Radek Roucka , Michael Lebby
IPC分类号： H01L29/20
CPC分类号： H01L21/02192 , H01L21/02247 , H01L21/02252 , H01L21/02381 , H01L21/02439 , H01L21/02458 , H01L21/02483 , H01L21/02488 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L29/2003
摘要： A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.
摘要翻译：在硅衬底上制造单晶III-N材料层的方法包括在硅衬底上外延生长REO模板。该模板包括与衬底相邻的REO层，晶体间距基本上与衬底的晶格间距相匹配，并被选择以保护衬底免受氮化。在模板的上表面附近形成稀土氮氧化物或稀土氮化物，并且在其上外延生长单晶III-N材料层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式