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1. 发明授权

US07608473B2 Image sensor device and manufacturing method thereof 有权
标题翻译：图像传感器装置及其制造方法
公开(公告)号：US07608473B2
公开(公告)日：2009-10-27
申请号：US11099058
申请日：2005-04-05
申请人： Anchor Chen
发明人： Anchor Chen
IPC分类号： H01L21/00
CPC分类号： H01L27/14625 , H01L27/14623 , H01L27/14627 , H01L27/14643
摘要： An image sensor and a manufacturing method thereof are provided. The image sensor includes a plurality of sensors, an inter-layer dielectric layer formed over the sensors, a first inter-metal dielectric layer formed over the inter-layer dielectric layer, and a plurality of first via walls formed in the first inter-metal dielectric layer, wherein each of the first via walls is formed around each of the sensors. In addition, the image sensor further includes a second inter-metal dielectric layer formed over the first inter-metal dielectric layer and a plurality of second via walls formed in the second inter-metal dielectric layer, wherein each of the second via walls is formed around each of the sensors. Therefore, the light leakage between different pixels and the problem of crosstalk are solved, and the spatial resolution and the photo sensitivity of the image sensor are enhanced.
摘要翻译：提供了图像传感器及其制造方法。图像传感器包括多个传感器，形成在传感器上的层间电介质层，形成在层间电介质层之上的第一金属间介电层和形成在第一金属间的多个第一通孔电介质层，其中每个所述第一通孔壁围绕每个所述传感器形成。此外，图像传感器还包括形成在第一金属间介电层上的第二金属间介电层和形成在第二金属间介电层中的多个第二通孔，其中形成有第二通孔壁围绕每个传感器。因此，解决了不同像素之间的漏光和串扰问题，提高了图像传感器的空间分辨率和光敏度。

2. 发明申请

US20050040470A1 Fabrication of self-aligned bipolar transistor 审中-公开
标题翻译：自对准双极晶体管的制造
公开(公告)号：US20050040470A1
公开(公告)日：2005-02-24
申请号：US10951377
申请日：2004-09-28
申请人： Shu-Ya Chuang , Jing-Horng Gau , Anchor Chen
发明人： Shu-Ya Chuang , Jing-Horng Gau , Anchor Chen
IPC分类号： H01L21/331 , H01L21/00 , H01L21/84 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66242 , H01L29/66318
摘要： A method for fabricating a self-aligned bipolar transistor, wherein a substrate having an epitaxial layer formed thereon as a base is provided. After this, a first dielectric layer, a second dielectric layer are sequentially formed on the epitaxial layer, followed by forming an opening in the second dielectric layer. A conductive spacer is formed on the sidewall of the opening. Using the second dielectric layer and the conductive spacer as a mask, a first dielectric layer in the opening is removed. A conductive layer is then formed in the opening as an emitter, followed by completely removing the second dielectric layer. A doping is conducted on the emitter. Using the emitter and the conductive spacer as a mask, a part of the first dielectric layer is removed. Further using the emitter and the conductive spacer as a mask, another doping is conducted to form a part of the epitaxial layer as a base contact region.
摘要翻译：一种用于制造自对准双极晶体管的方法，其中提供了其上形成有外延层作为基底的基板。之后，在外延层上依次形成第一电介质层，第二电介质层，随后在第二电介质层中形成开口。在开口的侧壁上形成导电间隔物。使用第二电介质层和导电间隔物作为掩模，去除开口中的第一介电层。然后在开口中形成导电层作为发射极，然后完全去除第二电介质层。在发射极上进行掺杂。使用发射极和导电间隔物作为掩模，去除第一介电层的一部分。进一步使用发射极和导电间隔物作为掩模，进行另一掺杂以形成作为基极接触区域的外延层的一部分。

3. 发明申请

US20050017322A1 Variable capactor structure and method of manufacture 有权
标题翻译：可变式压盖机结构及制造方法
公开(公告)号：US20050017322A1
公开(公告)日：2005-01-27
申请号：US10921457
申请日：2004-08-18
申请人： Jing-Horng Gau , Anchor Chen
发明人： Jing-Horng Gau , Anchor Chen
IPC分类号： H01L27/08 , H01L29/00 , H01L21/00
CPC分类号： H01L27/0808
摘要： A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type ion-doped well is formed within the substrate. The first type ion-doped well has a cavity. The first type ion-doped buried layer is in the substrate underneath the first type ion-doped well. The first type ion-doped buried layer and the first type ion-doped well are connected. The second type ion-doped region is at the bottom of the cavity of the first type ion-doped well. The conductive layer is above and in connection with the first type ion-doped buried layer.
摘要翻译：一种可变电容器，包括具有第一类型离子掺杂掩埋层，第一类型离子掺杂阱，第二类型离子掺杂区和其上的导电层的衬底。在衬底内形成第一种类型的离子掺杂阱。第一种类型的离子掺杂阱具有空腔。第一类离子掺杂掩埋层位于第一类离子掺杂阱下的衬底中。连接第一种离子掺杂掩埋层和第一种离子掺杂阱。第二类离子掺杂区位于第一类型离子掺杂阱的空腔的底部。导电层位于第一类型的离子掺杂掩埋层之上并与之连接。

4. 发明授权

US06720267B1 Method for forming a cantilever beam model micro-electromechanical system 有权
标题翻译：用于形成悬臂梁模型微机电系统的方法
公开(公告)号：US06720267B1
公开(公告)日：2004-04-13
申请号：US10249149
申请日：2003-03-19
申请人： Anchor Chen , Gary Hong
发明人： Anchor Chen , Gary Hong
IPC分类号： H01L21311
CPC分类号： B81C1/0015 , B81B2201/047
摘要： A cantilever beam type micro-electromechanical system (MEMS) is formed on a substrate. Two first electrodes are formed in a first dielectric layer on the substrate and a waveguide line is formed between the first electrodes. A patterned sacrificial layer and an arm layer are formed on the substrate. Two second electrodes and a second dielectric layer are formed in the arm layer, and an optical grating is formed in the second dielectric layer. Finally, a cap layer is formed on the substrate, and the patterned sacrificial layer is removed.
摘要翻译：在基板上形成悬臂梁型微机电系统（MEMS）。两个第一电极形成在衬底上的第一电介质层中，并且在第一电极之间形成波导线。在基板上形成图案化的牺牲层和臂层。在臂层中形成两个第二电极和第二电介质层，并且在第二电介质层中形成光栅。最后，在衬底上形成覆盖层，去除图案化的牺牲层。

5. 发明授权

US06566722B1 Photo sensor in a photo diode on a semiconductor wafer 有权
标题翻译：半导体晶片上的光电二极管中的光电传感器
公开(公告)号：US06566722B1
公开(公告)日：2003-05-20
申请号：US10064256
申请日：2002-06-26
申请人： Liang-Hua Lin , Anchor Chen
发明人： Liang-Hua Lin , Anchor Chen
IPC分类号： H01L2982
CPC分类号： H01L31/03529 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L31/103 , Y02E10/50
摘要： A method of forming a photo sensor in a photo diode is provided. The photo diode is formed in a semiconductor wafer. The semiconductor wafer includes a substrate with a first conductive type, and an insulating layer surrounding the photo sensor. A first ion implantation process, utilizing dopants with a second conductive type, is performed to form a plurality of first doped regions in the surface of the photo sensor. A second ion implantation process, utilizing dopants with the second conductive type, is performed to form a second doped region in the surface of the photo sensor. The second doped region is overlapped with a portion of each of the first doped regions.
摘要翻译：提供了一种在光电二极管中形成光电传感器的方法。光电二极管形成在半导体晶片中。半导体晶片包括具有第一导电类型的衬底和围绕光电传感器的绝缘层。执行利用具有第二导电类型的掺杂剂的第一离子注入工艺，以在光传感器的表面中形成多个第一掺杂区域。执行利用具有第二导电类型的掺杂剂的第二离子注入工艺，以在光传感器的表面中形成第二掺杂区域。第二掺杂区域与每个第一掺杂区域的一部分重叠。

6. 发明授权

US06187630B1 Method for forming hemispherical silicon grains on designated areas of silicon layer 有权
标题翻译：在硅层的指定区域形成半球形硅晶粒的方法
公开(公告)号：US06187630B1
公开(公告)日：2001-02-13
申请号：US09241526
申请日：1999-02-01
申请人： Anchor Chen , Shih-Ching Chen
发明人： Anchor Chen , Shih-Ching Chen
IPC分类号： H01L218242
CPC分类号： H01L28/84 , H01L27/10852
摘要： A method for forming hemispherical silicon grains on selected surfaces of a silicon layer includes the steps of forming a doped polysilicon layer over a substrate, and then forming amorphous spacers on the sidewalls of the doped polysilicon layer. Thereafter, an ion implantation is carried out to transform the upper portion of the doped polysilicon into an amorphous silicon layer. Finally, hemispherical silicon grains are formed on the upper surface of the amorphous layer lying above the polysilicon layer and the exposed surface of the amorphous spacers.
摘要翻译：在硅层的选定表面上形成半球形硅晶粒的方法包括以下步骤：在衬底上形成掺杂多晶硅层，然后在掺杂多晶硅层的侧壁上形成无定形间隔物。此后，进行离子注入以将掺杂多晶硅的上部变换为非晶硅层。最后，在位于多晶硅层上方的非晶层的上表面和非晶间隔物的暴露表面上形成半球硅晶粒。

7. 发明授权

US5936273A High-capacitance dynamic random access memory cell having a storage capacitor on a continuous irregular surface 失效
标题翻译：具有在连续不规则表面上的存储电容器的高电容动态随机存取存储单元
公开(公告)号：US5936273A
公开(公告)日：1999-08-10
申请号：US899788
申请日：1997-07-24
申请人： Anchor Chen
发明人： Anchor Chen
IPC分类号： H01L21/8242 , H01L27/108 , H01L29/78 , H01L29/92
CPC分类号： H01L27/10852 , H01L27/10808
摘要： A semiconductor structure for a DRAM cell having a high capacitance capacitor. The DRAM cell includes a silicon substrate on which a field oxide layer and a transistor having a gate layer and a source/drain region are formed. A contact surface is formed on a surface of the source/drain region. A silicon nitride layer is formed over the gate layer. A thick oxide layer is formed over one part of the silicon nitride layer, at a lateral side of the contact surface. Silicon nitride spacers are formed over opposite lateral sides of the gate layer, the silicon nitride layer, and the thick oxide layer. One of the silicon nitride spacers located adjacent to the contact surface, is shaped in the form of a pointed protrusion. A self-aligned contact insulating layer covers the thick oxide layer and the other silicon nitride spacer, that is located away from the contact surface. This structure defines a jagged surface over at least the contact surface, the pointed protrusion and the silicon nitride layer. A high surface area capacitor structure, including a first conductive layer, a dielectric layer over the first conductive layer, and a second conductive layer over the dielectric layer, is then formed over the jagged surface.
摘要翻译：一种具有高电容电容器的DRAM单元的半导体结构。 DRAM单元包括其上形成有场氧化物层和具有栅极层和源极/漏极区的晶体管的硅衬底。在源极/漏极区域的表面上形成接触表面。在栅极层上形成氮化硅层。在接触表面的侧面，在氮化硅层的一部分上形成厚的氧化物层。氮化硅间隔物形成在栅极层，氮化硅层和厚氧化物层的相对侧面上。位于与接触表面相邻的氮化硅间隔物中的一个被成形为尖突起的形式。自对准接触绝缘层覆盖远离接触表面的厚氧化物层和另一个氮化硅间隔物。该结构限定至少在接触表面，尖突起和氮化硅层上的锯齿状表面。然后在锯齿状表面上形成包括第一导电层，第一导电层上的电介质层和介电层上的第二导电层的高表面积电容器结构。

8. 发明授权

US5661081A Method of bonding an aluminum wire to an intergrated circuit bond pad 失效
标题翻译：将铝线接合到集成电路接合焊盘的方法
公开(公告)号：US5661081A
公开(公告)日：1997-08-26
申请号：US316083
申请日：1994-09-30
申请人： Chen-Chiu Hsue , Sun-Chieh Chien , Anchor Chen , Gary Hong
发明人： Chen-Chiu Hsue , Sun-Chieh Chien , Anchor Chen , Gary Hong
IPC分类号： H01L21/603 , H01L23/485 , H01L21/283
CPC分类号： H01L24/85 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05009 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05184 , H01L2224/05553 , H01L2224/05624 , H01L2224/45124 , H01L2224/45144 , H01L2224/48227 , H01L2224/48463 , H01L2224/48624 , H01L2224/48724 , H01L2224/49171 , H01L2224/85201 , H01L2224/85203 , H01L24/45 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/351
摘要： A process for manufacturing bonding pad adapted for use with an aluminum wire that resists stresses that would otherwise peel the pad from the substrate. The pad has a polysilicon layer adhered to an insulating layer on a semiconductor substrate, a overlying refractory metal polycide layer, a second polysilicon layer, a refractory metal layer, and a thick aluminum alloy bonding pad.
摘要翻译：一种用于制造适于与铝线一起使用的接合焊盘的方法，其抵抗否则将衬垫从衬底上剥离的应力。焊盘具有粘附到半导体衬底上的绝缘层，上覆难熔金属多晶硅化物层，第二多晶硅层，难熔金属层和厚铝合金焊盘的多晶硅层。

9. 发明授权

US07244975B2 High-voltage device structure 有权
标题翻译：高压器件结构
公开(公告)号：US07244975B2
公开(公告)日：2007-07-17
申请号：US11160657
申请日：2005-07-05
申请人： Anchor Chen , Chih-Hung Lin , Hwi-Huang Chen , Jih-Wei Liou , Chin-Hung Liu , Ming-Tsung Tung , Chien-Ming Lin , Jung-Ching Chen
发明人： Anchor Chen , Chih-Hung Lin , Hwi-Huang Chen , Jih-Wei Liou , Chin-Hung Liu , Ming-Tsung Tung , Chien-Ming Lin , Jung-Ching Chen
IPC分类号： H01L27/10 , H01L29/739 , H01L29/73 , H01L29/76 , H01L29/94
CPC分类号： H01L29/0692 , H01L29/0638 , H01L29/1041 , H01L29/7833
摘要： A high-voltage device structure includes a high-voltage device disposed on a semiconductor substrate. The semiconductor includes an active region and an isolation region, and the high-voltage device is disposed in the active region. The high-voltage device structure includes a source diffusion region of a first conductive type, a drain region of the first conductive type, and a gate longer than the source diffusion region and the drain diffusion region so as to form spare regions on both sides of the gate. The isolation region is outside the active region and surrounds the active region. In the isolation region, an isolation ion implantation region of a second conductive type and an extended ion implantation region are disposed to prevent parasitic current from being generating between the source diffusion region and the drain diffusion region.
摘要翻译：高压器件结构包括设置在半导体衬底上的高电压器件。半导体包括有源区和隔离区，高压器件设置在有源区中。高电压器件结构包括第一导电类型的源极扩散区域，第一导电类型的漏极区域和比源极扩散区域和漏极扩散区域更长的栅极，以在第二导电类型的两侧形成备用区域大门。隔离区域在有源区域之外并且围绕有源区域。在隔离区域中，设置第二导电型隔离离子注入区域和延伸离子注入区域，以防止在源极扩散区域和漏极扩散区域之间产生寄生电流。

10. 发明授权

US06235576B1 Method for manufacturing a cylindrical capacitor 失效
标题翻译：圆柱形电容器的制造方法
公开(公告)号：US06235576B1
公开(公告)日：2001-05-22
申请号：US09241522
申请日：1999-02-01
申请人： Gary Hong , Anchor Chen
发明人： Gary Hong , Anchor Chen
IPC分类号： H01L2120
CPC分类号： H01L28/92 , H01L21/76895 , H01L27/10852
摘要： A method for manufacturing a cylindrical capacitor on a substrate includes the steps of providing a semiconductor substrate having a first conductive layer thereon, and then forming an insulation layer over the first conductive layer. The insulation layer can be a silicon nitride layer. The insulation layer is patterned to leave a portion of the patterned insulation layer above the node contact region. Thereafter, spacers are formed on the sidewalls of the patterned insulation layer such that the spacers are formed from a material that differs from the insulation layer and the first conductive layer. Next, an etching operation is conducted using the patterned insulation layer and the spacers as a mask to remove a portion of the first conductive layer. After that, the patterned insulation layer is removed. Then, a second etching operation is carried out using the spacers as a mask so that some more material from the upper portion of the first conductive layer is removed. Ultimately, a cylindrical shape structure that serves as the lower electrode of a capacitor is formed. Finally, the spacers are removed, and then a dielectric layer and a second conductive layer are sequentially formed over the cylindrical lower electrode to complete the fabrication of a cylindrical capacitor.
摘要翻译：一种用于在基板上制造圆柱形电容器的方法包括以下步骤：在其上提供具有第一导电层的半导体衬底，然后在第一导电层上形成绝缘层。绝缘层可以是氮化硅层。将绝缘层图案化以将图案化绝缘层的一部分留在节点接触区域上方。此后，在图案化绝缘层的侧壁上形成间隔物，使得间隔物由与绝缘层和第一导电层不同的材料形成。接下来，使用图案化绝缘层和间隔物作为掩模进行蚀刻操作以去除第一导电层的一部分。之后，去除图案化绝缘层。然后，使用间隔物作为掩模进行第二蚀刻操作，从而去除来自第一导电层的上部的一些更多的材料。最终，形成用作电容器的下电极的圆柱形结构。最后，去除间隔物，然后在圆柱形下电极上依次形成电介质层和第二导电层，以完成圆柱形电容器的制造。

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