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1. 发明授权

US08431399B2 Method to restore cartilaginous phenotype of chondrocytes after cultured and expanded in vitro 有权
标题翻译：在体外培养和扩增后恢复软骨细胞软骨表型的方法
公开(公告)号：US08431399B2
公开(公告)日：2013-04-30
申请号：US12716141
申请日：2010-03-02
申请人： Yu-Hui Tsai , Li-Hsuan Chiu , Chin-Chean Wong , Wen-Fu Lai , Shih-Ching Chen
发明人： Yu-Hui Tsai , Li-Hsuan Chiu , Chin-Chean Wong , Wen-Fu Lai , Shih-Ching Chen
IPC分类号： C12N5/00 , C12N5/02
CPC分类号： C12N5/10
摘要： The present invention provides a method for restoring native chondrocyte phenotype and functions of, and/or increasing type II collagen as well as aggrecan mRNA expression levels and GAG accumulation level in dedifferentiated chondrocytes which have been subcultured and expanded in vitro, which comprising culturing the said dedifferentiated chondrocytes in vitro with a medium comprising type II collagen, or its biologically active peptide fragment(s) or analogs with or without growth factor(s), wherein the type II collagen or its biologically active peptide fragment(s) or analogs are effective to restore chondrocyte phenotype and functions of, and/or to increase type II collagen and aggrecan expression levels and GAG accumulation level in the said dedifferentiated chondrocytes.
摘要翻译：本发明提供了一种在体外传代培养和扩增的去分化软骨细胞中恢复天然软骨细胞表型和功能和/或增加II型胶原以及聚集蛋白聚糖mRNA表达水平和GAG积聚水平的方法，其包括培养所述用包含II型胶原的培养基或其生物活性肽片段或具有或不具有生长因子的类似物在体外进行去分化软骨细胞，其中II型胶原或其生物活性肽片段或类似物是有效的和/或增加所述去分化软骨细胞中II型胶原和聚集蛋白聚糖表达水平和GAG积累水平的软骨细胞表型和功能。

2. 发明申请

US20120068142A1 RESISTANCE RANDOM ACCESS MEMORY ELEMENT AND METHOD FOR MAKING THE SAME 有权
标题翻译：电阻随机存取元件及其制造方法
公开(公告)号：US20120068142A1
公开(公告)日：2012-03-22
申请号：US13112605
申请日：2011-05-20
申请人： Ting-Chang CHANG , Po-Chun Yang , Yu-Shih Lin , Shih-Ching Chen , Fu-Yen Jian
发明人： Ting-Chang CHANG , Po-Chun Yang , Yu-Shih Lin , Shih-Ching Chen , Fu-Yen Jian
IPC分类号： H01L45/00 , H01L21/20
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/1273 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A resistance random access memory element includes a first electrode, an insulating layer, a diffusing metal layer, and a second electrode superimposed in sequence. The insulating layer includes a plurality of pointed electrodes. A method for making a resistance random access memory element includes growing and forming an insulating layer on a surface of a first electrode. A diffusing metal layer is formed on a surface of the insulating layer. A second electrode is mounted on a surface of the diffusing metal layer. A negative pole and a positive pole of a driving voltage are connected with the first and second electrodes, respectively. The diffusing metal in the diffusing metal layer is oxidized into metal ions by the driving voltage. The metal ions are driven into the insulating layer and form a plurality of pointed electrodes after reduction.
摘要翻译：电阻随机存取存储元件包括依次叠加的第一电极，绝缘层，扩散金属层和第二电极。绝缘层包括多个尖电极。制造电阻随机存取存储元件的方法包括在第一电极的表面上生长并形成绝缘层。在绝缘层的表面上形成扩散金属层。第二电极安装在漫射金属层的表面上。驱动电压的负极和正极分别与第一和第二电极连接。扩散金属层中的扩散金属通过驱动电压被氧化为金属离子。金属离子被驱动到绝缘层中，并且在还原之后形成多个尖电极。

3. 发明申请

US20110262486A1 Bone implant and manufacturing method thereof 审中-公开
标题翻译：骨植入物及其制造方法
公开(公告)号：US20110262486A1
公开(公告)日：2011-10-27
申请号：US12799343
申请日：2010-04-22
申请人： Yu-Hui Tsai , Li-Hsuan Chiu , Wen-Fu Lai , Shih-Ching Chen
发明人： Yu-Hui Tsai , Li-Hsuan Chiu , Wen-Fu Lai , Shih-Ching Chen
IPC分类号： A61K9/00 , A61K33/24 , A61K35/12 , A61K38/39
CPC分类号： A61K33/24 , A61L27/34 , A61L27/3821 , A61L27/44 , A61L27/54 , A61L27/56 , A61L2300/414 , A61L2430/02 , C08L89/06
摘要： The invention discloses a bone implant and a manufacturing method thereof. The manufacturing method of the bone implant comprises a step of coating or mixing type II collagen with at least one porous bone material comprising metals, bio-ceramics, natural biopolymers and synthetic polymers. Another manufacturing method of the bone implant comprises the steps of loading type II collagen with or without at least one porous bone material in a container, and lyophilizing the type II collagen to generate a type II collagen sponge construct with or without the porous bone material as the bone material. The manufactured bone implants are effective, with or without loading cells having differentiation tendency towards osteogenesis, to facilitate bone repair upon introduction of the bone implant into various osseous defects.
摘要翻译：本发明公开了一种骨植入物及其制造方法。骨植入物的制造方法包括用至少一种包含金属，生物陶瓷，天然生物聚合物和合成聚合物的多孔骨材料涂覆或混合II型胶原的步骤。骨植入物的另一种制造方法包括以下步骤：将具有或不具有至少一种多孔骨材料的II型胶原蛋白装载在容器中，并将II型胶原冻干以产生具有或不具有多孔骨材料的II型胶原海绵构造物骨材料。所制造的骨植入物是有效的，有或没有负载细胞具有分化趋向于成骨的趋势，以便在将骨植入物引入各种骨缺损时促进骨修复。

4. 发明申请

US20100034027A1 Method for programming a nonvolatile memory 有权
标题翻译：非易失性存储器编程方法
公开(公告)号：US20100034027A1
公开(公告)日：2010-02-11
申请号：US12314129
申请日：2008-12-04
申请人： Ting-Chang Chang , Shih-Ching Chen , Fu-Yen Jian
发明人： Ting-Chang Chang , Shih-Ching Chen , Fu-Yen Jian
IPC分类号： G11C16/04
CPC分类号： G11C16/0408 , G11C16/0466 , G11C16/10
摘要： A method for programming a nonvolatile memory is provided. The method includes applying at least a voltage to a source or a drain, so as to inject carriers of the source or drain into a substrate; applying a third voltage to a gate or the substrate, so that the carriers which are in the substrate having enough energy can surmount an oxide layer to reach a charge storage device.
摘要翻译：提供了一种非易失性存储器的编程方法。该方法包括将至少一个电压施加到源极或漏极，以便将源极或漏极的载流子注入到衬底中; 向栅极或衬底施加第三电压，使得在衬底中具有足够能量的载流子可以超过氧化物层到达电荷存储装置。

5. 发明授权

US06354316B1 Skeleton for umbrella tent 失效
标题翻译：伞帐篷骨架
公开(公告)号：US06354316B1
公开(公告)日：2002-03-12
申请号：US09541607
申请日：2000-04-03
申请人： Shih-Ching Chen
发明人： Shih-Ching Chen
IPC分类号： E04H1524
CPC分类号： E04H15/28
摘要： A skeleton for umbrella tent mainly includes a top hub to which multiple brace poles are radially and pivotally connected to stretch by a predetermined angle; a bottom hub to which multiple stretch arms are radially and pivotally connected to stretch by a predetermined angle, and outer ends of these stretch arms are separately pivotally connected to a predetermined point on the brace poles; a flexible telescopic portion located between the top and the bottom hubs and consisting of multiple sections in the form of hollow truncated cones; and a pull rope extending through the telescopic portion with an upper end fixed to the top hub and a lower end hanging from the bottom hub to connect to a ring handle. By pulling the pull rope downward, the telescopic portion is folded to easily cause the stretch arms and the brace poles to move into a stretched position to set up the tent.
摘要翻译：伞帐架的骨架主要包括一个顶部轮毂，多个支杆杆径向和枢转地连接到该顶部轴套上以预定的角度拉伸; 多个拉伸臂径向和枢转地连接以使其拉伸预定角度的底部毂，并且这些拉伸臂的外端分别枢转地连接到支柱杆上的预定点; 位于顶部和底部毂之间的柔性伸缩部分并且由中空截锥体形式的多个部分组成; 以及延伸穿过所述伸缩部分的拉绳，其上端固定到所述顶部轮毂，以及从所述底部轮毂悬挂以连接到环形手柄的下端。通过向下拉动拉绳，伸缩部分被折叠以容易地使拉伸臂和支撑杆移动到拉伸位置以建立帐篷。

6. 发明授权

US06238996B1 Method of forming a shallow trench isolation structure 有权
标题翻译：形成浅沟槽隔离结构的方法
公开(公告)号：US06238996B1
公开(公告)日：2001-05-29
申请号：US09236951
申请日：1999-01-25
申请人： Guan-Jiun Liu , Shih-Ching Chen , Chi-Jui Sung , Chung-Po Hsu
发明人： Guan-Jiun Liu , Shih-Ching Chen , Chi-Jui Sung , Chung-Po Hsu
IPC分类号： H01L2176
CPC分类号： H01L21/76232
摘要： This invention provides a concave shallow trench isolation structure, and a fabricating method of a shallow trench isolation structure with concave bottom corners. The concave shape of the structure prevents stress centralization, and avoids leakage current or punch through in the source/drain regions.
摘要翻译：本发明提供了一种凹槽浅沟槽隔离结构，以及具有凹底角的浅沟槽隔离结构的制造方法。该结构的凹形防止了应力集中，避免了漏/漏区域的漏电流或冲击。

7. 发明授权

US06187630B1 Method for forming hemispherical silicon grains on designated areas of silicon layer 有权
标题翻译：在硅层的指定区域形成半球形硅晶粒的方法
公开(公告)号：US06187630B1
公开(公告)日：2001-02-13
申请号：US09241526
申请日：1999-02-01
申请人： Anchor Chen , Shih-Ching Chen
发明人： Anchor Chen , Shih-Ching Chen
IPC分类号： H01L218242
CPC分类号： H01L28/84 , H01L27/10852
摘要： A method for forming hemispherical silicon grains on selected surfaces of a silicon layer includes the steps of forming a doped polysilicon layer over a substrate, and then forming amorphous spacers on the sidewalls of the doped polysilicon layer. Thereafter, an ion implantation is carried out to transform the upper portion of the doped polysilicon into an amorphous silicon layer. Finally, hemispherical silicon grains are formed on the upper surface of the amorphous layer lying above the polysilicon layer and the exposed surface of the amorphous spacers.
摘要翻译：在硅层的选定表面上形成半球形硅晶粒的方法包括以下步骤：在衬底上形成掺杂多晶硅层，然后在掺杂多晶硅层的侧壁上形成无定形间隔物。此后，进行离子注入以将掺杂多晶硅的上部变换为非晶硅层。最后，在位于多晶硅层上方的非晶层的上表面和非晶间隔物的暴露表面上形成半球硅晶粒。

8. 发明授权

US6121109A Method of forming hemispherical grain polysilicon over lower electrode capacitor 失效
标题翻译：在下电极电容器上形成半球晶粒多晶硅的方法
公开(公告)号：US6121109A
公开(公告)日：2000-09-19
申请号：US191327
申请日：1998-11-13
申请人： Shih-Ching Chen , Neng-Hsing Shen
发明人： Shih-Ching Chen , Neng-Hsing Shen
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/20
CPC分类号： H01L28/82 , H01L28/84 , H01L27/10852
摘要： A method of forming a layer of hemispherical grain polysilicon over the lower electrode of a capacitor. The method comprises the steps of providing a substrate that has a field effect transistor already formed thereon, and then forming an insulating layer with a contact opening over the substrate. Subsequently, a polysilicon layer is formed over the insulating layer that completely fills the contact opening. This polysilicon layer is electrically coupled to one of the source/drain regions of the field effect transistor. Thereafter, a thin buffer layer is formed over the polysilicon layer, and then the thin buffer layer is patterned. The thin buffer layer is used as a mask for covering the polysilicon layer that is to be part of the lower electrode of a capacitor. Next, a plasma etching operation is carried out to remove the thin buffer layer and a portion of the polysilicon layer at the same time. Finally, a heat treatment is carried out to form a hemispherical grain polysilicon layer over the surface of the lower electrode.
摘要翻译：一种在电容器的下电极上形成半球晶粒多晶硅层的方法。该方法包括以下步骤：提供具有已在其上形成的场效应晶体管的衬底，然后在衬底上形成具有接触开口的绝缘层。随后，在完全填充接触开口的绝缘层上形成多晶硅层。该多晶硅层电耦合到场效应晶体管的源/漏区之一。此后，在多晶硅层上形成薄缓冲层，然后对薄缓冲层进行图案化。薄缓冲层用作覆盖作为电容器的下电极的一部分的多晶硅层的掩模。接下来，进行等离子体蚀刻操作以同时去除薄缓冲层和多晶硅层的一部分。最后，进行热处理以在下电极的表面上形成半球形晶粒多晶硅层。

9. 发明授权

US08427879B2 Method for enabling a SONOS transistor to be used as both a switch and a memory 有权
标题翻译：使SONOS晶体管能够用作开关和存储器的方法
公开(公告)号：US08427879B2
公开(公告)日：2013-04-23
申请号：US12644575
申请日：2009-12-22
申请人： Ting-Chang Chang , Shih-Ching Chen , Te-Chih Chen , Fu-Yen Jian , Yong-En Syu
发明人： Ting-Chang Chang , Shih-Ching Chen , Te-Chih Chen , Fu-Yen Jian , Yong-En Syu
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/0466 , G11C16/10 , H01L29/792
摘要： There is a method for enabling a SONOS transistor to be used as both a switch and a memory. FN tunneling is carried out through the source or drain of the transistor, so as to further change the state of electrons stored in an upper charge storage layer adjacent to the drain or source, and the variation in gate-induced drain leakage is used to recognize the memory state of the drain and source. A stable threshold voltage of the transistor is always maintained during this operation. The present invention enables one single transistor having dual features of switch and memory, while being provided with a two-bit memory effect, thus providing a higher memory density in comparison with a general transistor.
摘要翻译：存在使SONOS晶体管能够用作开关和存储器的方法。通过晶体管的源极或漏极进行FN隧穿，从而进一步改变存储在与漏极或源极相邻的上部电荷存储层中的电子的状态，并且使用栅极引起的漏极泄漏的变化来识别漏极和源的存储状态。在此操作期间，始终保持晶体管的稳定阈值电压。本发明使得具有开关和存储器的双重特征的单个晶体管同时具有两比特存储器效应，从而与通用晶体管相比提供了更高的存储器密度。

10. 发明申请

US20130030045A1 METHOD OF PREVENTING AND TREATING OSTEOPOROSIS 审中-公开
标题翻译：预防和治疗OSTEOPOSOSIS的方法
公开(公告)号：US20130030045A1
公开(公告)日：2013-01-31
申请号：US13567934
申请日：2012-08-06
申请人： Yu-Hui TSAI , Yu-Wei Wu , Yu-Hsiang Lin , Wen-Fu Lai , Shih-Ching Chen
发明人： Yu-Hui TSAI , Yu-Wei Wu , Yu-Hsiang Lin , Wen-Fu Lai , Shih-Ching Chen
IPC分类号： A61K31/353 , A61P19/10
CPC分类号： A61K31/353
摘要： The invention discloses a method of preventing and treating osteoporosis. The method comprises a step of enhancing osteoblast differentiation and inhibiting osteoclast differentiation by administering a pharmaceutically effective amount of a composition comprising 6-hydroxy flavone compound or 7-methoxy flavone compound, or at least one pharmaceutically acceptable salt thereof to a subject.
摘要翻译：本发明公开了一种预防和治疗骨质疏松症的方法。该方法包括通过向受试者施用药学有效量的包含6-羟基黄酮化合物或7-甲氧基黄酮化合物或其至少一种药学上可接受的盐的组合物来增强成骨细胞分化和抑制破骨细胞分化的步骤。

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