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1. 发明专利

JP2003273035A Plasma processing apparatus, driving method therefor and plasma processing method 有权
标题翻译：等离子体加工设备，其驱动方法和等离子体处理方法
公开(公告)号：JP2003273035A
公开(公告)日：2003-09-26
申请号：JP2002344709
申请日：2002-11-27
申请人： Alps Electric Co Ltd , Tadahiro Omi , アルプス電気株式会社 , 忠弘大見
发明人： NAKANO AKIRA , KUMAGAI MASA , OBA TOMOFUMI , OMI TADAHIRO
IPC分类号： H05H1/46 , B01J19/08 , C23C16/509 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus in which the time until a system goes into an efficient plasma discharge state, after plasma is discharged from a start of plasma discharge power supply can be shortened. SOLUTION: The plasma processor has a matching circuit 2A for matching impedance between a high-frequency power source 1 and a plasma processing chamber CN and a matching controller 31 for matching output impedance in the matching circuit 2A with impedance in the plasma processing chamber CN in a non-discharge state, prior to discharge for generating plasma. Impedance Z0 before plasma discharging in the plasma processing chamber is stored in a storage part 32, for example. The matching controller 31 calls impedance Z0 from the storage part 32, when high-frequency power is supplied from the high frequency power source 1 and adjusts capacitance of a load capacitor 206 and a tuning capacitor 205, which constitute the matching circuit 2A. Thus, the impedance of the plasma processing chamber CN, prior to discharge, is started from supply of high-frequency power is adjusted easily. COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种等离子体处理装置，其中直到系统进入有效的等离子体放电状态的时间，等离子体从等离子体放电电源的开始放电之后可以缩短。解决方案：等离子体处理器具有用于匹配高频电源1和等离子体处理室CN之间的阻抗的匹配电路2A和用于将匹配电路2A中的输出阻抗与等离子体处理中的阻抗匹配的匹配控制器31 在放电等离子体之前，处于非放电状态的室CN。等离子体处理室等离子体放电之前的阻抗Z0例如存储在存储部32中。当从高频电源1提供高频电力并调整构成匹配电路2A的负载电容器206和调谐电容器205的电容时，匹配控制器31调用来自存储部分32的阻抗Z0。因此，容易地调整等离子体处理室CN在放电之前从高频电源的供给开始的阻抗。版权所有（C）2003，JPO

2. 发明专利

JP2004038047A Active matrix substrate, method for manufacturing same, and display device using same 有权
公开(公告)号：JP2004038047A
公开(公告)日：2004-02-05
申请号：JP2002197997
申请日：2002-07-05
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： OBA TOMOFUMI , KAWABATA MASARU
IPC分类号： G02F1/1368 , G02F1/136 , G09F9/00 , G09F9/30 , H01L21/3065 , H01L21/336 , H01L21/768 , H01L23/522 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To prevent the current leakage between pixel electrodes relating to an active matrix substrate adequate for use in a liquid crystal display device etc., a method for manufacturing the same, and a display device using the same. SOLUTION: An organic insulating layer 9 is disposed on a substrate 1 formed with scanning lines, signal lines 12 and switching elements 30 disposed near their intersections and the pixel electrodes 10 conducted to the switching elements 30 through contact holes 18 are formed on this layer 9. The surface layer parts of the layer 9 in the regions where the pixel electrodes 10 are not formed are partly removed to expose the ground surface portions of the layer 9 having a high surface resistance in the regions between the adjacent pixel electrodes 10, by which the current leakage between the pixel electrodes 10 through the surface of the layer 9 is prevented. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2009283847A Low-resistance granular film, and its method for manufacturing 有权
标题翻译：低电阻颗粒膜及其制造方法
公开(公告)号：JP2009283847A
公开(公告)日：2009-12-03
申请号：JP2008136799
申请日：2008-05-26
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： KAWAMURA MASAHIRO , FUJIMOTO HARUHIKO , FUKUI HIROFUMI , SOEJIMA KAZUHIRO , TAKATSUKA TOMOMASA , OBA TOMOFUMI , SUDO SHUNEI , SASAKI HIROMITSU , WAGA SATOSHI
IPC分类号： H01L43/08 , H01F10/12 , H01F41/18 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a granular film having further low resistance while keeping a high magnetoresistive effect (MR effect).
SOLUTION: In a sputtering device equipped with a MgO target 3 and a ferromagnetic target 4, and sputtering MgO and a ferromagnetic substance to a substrate 8, this low-resistance granular film including a MgO barrier layer having (111) orientation and ferromagnetic fine particles dispersed in the MgO barrier layer is formed on the substrate 8 while a plasma interference state is optimized.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有更低电阻同时保持高磁阻效应（MR效应）的粒状膜。解决方案：在具有MgO靶3和铁磁性靶4的溅射装置中，将MgO和铁磁性物质溅射到基板8，该低电阻粒状膜包括具有（111）取向的MgO阻挡层和在等离子体干扰状态最优化的同时，在基板8上形成分散在MgO阻挡层中的铁磁性微粒。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JPH0776776A ELECTRON ELEMENT AND ITS PRODUCTION 失效
公开(公告)号：JPH0776776A
公开(公告)日：1995-03-20
申请号：JP34662593
申请日：1993-12-21
申请人： ALPS ELECTRIC CO LTD , OMI TADAHIRO
发明人： FUKUDA KOICHI , OBA TOMOFUMI , KUBOTA TAKASHI , MIYAZAKI MASANORI , KITAGAWA HITOSHI , KASAMA YASUHIKO , IWASAKI CHISATO , FUKUI HIROFUMI , OMI TADAHIRO
IPC分类号： C23C16/34 , H01L21/31 , H01L21/318 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To provide an electronic element, such as thin-film transistor, having an insulating film having excellent characteristics even with a single layer by using silicon and nitrogen having specific element ratios as the essential component of the insulating film of the electronic element having the insulating film and incorporating specific rare gaseous element in the insulating film. CONSTITUTION:The essential components of the insulating film of the electronic element having the insulating film are formed of the silicon and the nitrogen and the element ratio of the silicon:nitrogen is specified to about 3:4. A rare gaseous element, such as Ar element, is incorporated at 0.01 to 3 atm.% in the insulating film. The gaseous compsn. for forming the film is formed of a gaseous mixture contg. at least silane, ammonia, nitrogen and rare gaseous elements and the molar ratios of the rare gaseous element and the nitrogen are specified to the rare gaseous element/the nitrogen=0.1 to 10 at the time of producing the insulating film described above by a plasma CVD method.

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