专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2010016260A Magnetic sensor 审中-公开
标题翻译：磁传感器
公开(公告)号：JP2010016260A
公开(公告)日：2010-01-21
申请号：JP2008176157
申请日：2008-07-04
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： KAWAMURA MASAHIRO , SAITO MASAJI , NISHIYAMA YOSHIHIRO , IDE YOSUKE , KASASHIMA MASAO , KOBAYASHI HIDEKAZU , TOKUNAGA ICHIRO , OSADA KATSUHISA
IPC分类号： H01L43/08 , G01R33/09
摘要： PROBLEM TO BE SOLVED: To provide a magnetic sensor which is particularly excellent in DC voltage resistance, ESD resistance, and the voltage dependency of a change rate of magnetic resistance and has a change rate of magnetic resistance higher than 100%.
SOLUTION: The magnetic sensor 1 has a TMR element 3 whose electric resistance value varies with respect to an outside magnetic field. The TMR element 3 is formed in such a manner that an antiferromagnetic layer 11, a fixed magnetic layer 23, an insulating barrier layer 16, and a free magnetic layer 24 are laminated in this order. The insulating barrier layer 16 is characterized by a film thickness which is formed at Mg-O of 16 Å-40 Å. A parallel surface to an interface of each layer constituting the TMR element is almost circular, and its diameter is preferable to be in a range of 5 μm-100 μm. The number of TMR elements 3 is preferable to be 8 or more and to be connected in series.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种特别优异的直流耐电压性，耐ESD性以及磁阻变化率的电压依赖性的磁传感器，其磁阻变化率高于100％。解决方案：磁传感器1具有电阻值相对于外部磁场变化的TMR元件3。 TMR元件3以这样的方式形成，使得反铁磁层11，固定磁性层23，绝缘阻挡层16和自由磁性层24依次层叠。绝缘阻挡层16的特征在于在16埃-400的Mg-O处形成的膜厚度。构成TMR元件的各层的界面的平行面几乎为圆形，其直径优选在5μm〜100μm的范围内。 TMR元件3的数量优选为8以上并串联连接。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009260164A Magnetic sensor 审中-公开
标题翻译：磁传感器
公开(公告)号：JP2009260164A
公开(公告)日：2009-11-05
申请号：JP2008109937
申请日：2008-04-21
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： IDE YOSUKE , SAITO MASAJI , NISHIYAMA YOSHIHIRO , KOBAYASHI HIDEKAZU , OSADA KATSUHISA , KASASHIMA MASAO , TOKUNAGA ICHIRO , KAWAMURA MASAHIRO
IPC分类号： H01L43/08 , G01R33/09 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To provide a magnetic sensor improved in ESD resistance characteristics, in particular, compared with a conventional sensor, in the magnetic sensor using a tunnel magnetoresistance effect element (TMR element).
SOLUTION: A magnetic sensor S1 has an element utilizing a magnetoresistance effect that changes electric resistance against an external magnetic field. The element is composed of a tunnel magnetoresistance effect element (TMR element) 21. Electrode layers 23 and 24 are formed on the TMR element 21. At a side of the TMR element 21, a capacitance layer 42 is formed that is located between the electrodes and connected with the TMR element 21 in parallel. The capacitance C2 of the capacitance layer 42 is larger than the capacitance C1 of the TMR element 21.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在使用隧道磁阻效应元件（TMR元件）的磁传感器中，提供一种改进了ESD电阻特性的磁传感器，特别是与常规传感器相比。解决方案：磁传感器S1具有利用改变对外部磁场的电阻的磁阻效应的元件。该元件由隧道磁阻效应元件（TMR元件）21组成。电极层23和24形成在TMR元件21上。在TMR元件21的一侧形成电容层42，其位于电极并且与TMR元件21并联连接。电容层42的电容C2大于TMR元件21的电容C1。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2007188739A Magnetic switch 审中-公开
标题翻译：磁性开关
公开(公告)号：JP2007188739A
公开(公告)日：2007-07-26
申请号：JP2006005506
申请日：2006-01-13
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： KAWAMURA MASAHIRO , TOKUNAGA ICHIRO
IPC分类号： H01H36/00 , G01R33/09 , H01L43/08
CPC分类号： G01D5/145
摘要： PROBLEM TO BE SOLVED: To provide a magnetic switch in which an erroneous movement is hard to occur with a small number of parts and in which effect of a temperature change is suppressed low.
SOLUTION: This has a fixed part, a moving mechanism to move in parallel with the fixed part, a pair of magnets M1, M2 which generate outer magnetic fields H1, H2 of different polarities and which are installed at one of the fixed part and the moving mechanism, a magnetic resistance effect element composed of one GMR element 10 installed at the other part, a power supply part to supply a prescribed current to the magnetic resistance effect element, and a comparing part to compare a voltage output from the magneto-resistance effect element and a prescribed threshold value and to output a switching signal based on that comparison result.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁性开关，其中少量部件难以发生错误运动，并且将温度变化的影响抑制在较低的范围内。解决方案：具有固定部分，与固定部分平行移动的移动机构，产生不同极性的外磁场H1，H2的一对磁体M1，M2，并且安装在固定部分之一部分和移动机构，由安装在另一部分的一个GMR元件10构成的磁阻效应元件，向磁阻效应元件提供规定电流的电源部分，以及比较部分，磁阻效应元件和规定的阈值，并且基于该比较结果来输出开关信号。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2009283847A Low-resistance granular film, and its method for manufacturing 有权
标题翻译：低电阻颗粒膜及其制造方法
公开(公告)号：JP2009283847A
公开(公告)日：2009-12-03
申请号：JP2008136799
申请日：2008-05-26
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： KAWAMURA MASAHIRO , FUJIMOTO HARUHIKO , FUKUI HIROFUMI , SOEJIMA KAZUHIRO , TAKATSUKA TOMOMASA , OBA TOMOFUMI , SUDO SHUNEI , SASAKI HIROMITSU , WAGA SATOSHI
IPC分类号： H01L43/08 , H01F10/12 , H01F41/18 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a granular film having further low resistance while keeping a high magnetoresistive effect (MR effect).
SOLUTION: In a sputtering device equipped with a MgO target 3 and a ferromagnetic target 4, and sputtering MgO and a ferromagnetic substance to a substrate 8, this low-resistance granular film including a MgO barrier layer having (111) orientation and ferromagnetic fine particles dispersed in the MgO barrier layer is formed on the substrate 8 while a plasma interference state is optimized.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有更低电阻同时保持高磁阻效应（MR效应）的粒状膜。解决方案：在具有MgO靶3和铁磁性靶4的溅射装置中，将MgO和铁磁性物质溅射到基板8，该低电阻粒状膜包括具有（111）取向的MgO阻挡层和在等离子体干扰状态最优化的同时，在基板8上形成分散在MgO阻挡层中的铁磁性微粒。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2007220367A Magnetic switch 有权
标题翻译：磁性开关
公开(公告)号：JP2007220367A
公开(公告)日：2007-08-30
申请号：JP2006037010
申请日：2006-02-14
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： KAWAMURA MASAHIRO , TOKUNAGA ICHIRO
IPC分类号： H01H36/00 , G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic switch which prevents zero field from being formed in a magnetoresistive effect element, and ensures the high stability. SOLUTION: Each of magnetoresistive effect elements 10A and 10B at least includes a fixed layer, an antiferromagnetic layer for pinning magnetization directions α1 and α2 within the fixed layer to the predetermined directions, a free layer where its inner magnetization directions β1 and β2 are changed in accordance with the external fields, and biasing layers 15a and 15b which provide biasing fields γ1 and γ2 for setting up the magnetization directions within the fixed layer to the predetermined reference directions. An angle is set to 90° between the directions of external fields H1 and H2 and those of biasing fields γ1 and γ2. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种防止在磁阻效应元件中形成零场的磁开关，并且确保高稳定性。解决方案：每个磁阻效应元件10A和10B至少包括固定层，用于将固定层内的磁化方向α1和α2固定到预定方向的反铁磁层，其内部磁化方向β1和β2的自由层根据外部场变化的偏置层15a，15b，其设置用于将固定层内的磁化方向设定为规定的基准方向的偏置场γ1，γ2。在外场H1和H2的方向与偏置场γ1和γ2的方向之间的角度设定为90°。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006208255A Sensor for detecting angle 有权
标题翻译：用于检测角度的传感器
公开(公告)号：JP2006208255A
公开(公告)日：2006-08-10
申请号：JP2005022442
申请日：2005-01-31
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： KAWAMURA MASAHIRO , TOKUNAGA ICHIRO
IPC分类号： G01D5/245 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a sensor for detecting angle which enhances detection accuracy in rotational angle.
SOLUTION: Unidirectional alternating bias magnetic field Hex* of a fixed magnetism layer 2 is set to be 200 kA/m or larger, thereby enabling values of waveform distortions to be suppressed into 7 degrees or less. Furthermore, the unidirectional alternating bias magnetic field Hex* of the fixed magnetism layer 2 is set to be 320 kA/m or larger, thereby enabling values of waveform distortions to be suppressed into 4 degrees or less. Moreover, a soft magnetism layer 4b of a free magnetism layer 4 is made of an NiFe alloy, and a diffusion preventing layer 4a is made of an CoFe alloy, thereby enabling the absolute value of magnetostrictive constant λ of the free magnetism layer 4 can be set to 1.3 ppm or smaller.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于检测角度的传感器，其提高旋转角度的检测精度。解决方案：将固定磁层2的单向交流偏置磁场Hex *设定为200kA / m以上，从而能够将波形失真的值抑制在7度以下。此外，固定磁层2的单向交替偏置磁场Hex *被设定为320kA / m以上，从而能够将波形失真的值抑制在4度以下。此外，自由磁性层4的软磁性层4b由NiFe合金制成，并且扩散防止层4a由CoFe合金制成，从而能够使自由磁性层4的磁致伸缩常数λ的绝对值为设定为1.3ppm以下。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

DE112010003703T5 Magnetsensor-Herstellungsverfahren 未知
公开(公告)号：DE112010003703T5
公开(公告)日：2012-09-27
申请号：DE112010003703
申请日：2010-09-09
申请人： ALPS ELECTRIC CO LTD
发明人： INOMATA TAKEYA , KAWAMURA MASAHIRO , TOKUNAGA ICHIRO
IPC分类号： H01L43/08 , G01R33/09 , H01L43/12
摘要： Es wird ein Verfahren des Herstellens eines Magnetsensors bereitgestellt, das es ermöglicht, mehrere Erkennungselemente (2, 3, 4, 5) auf dem gleichen Substrat (10) unter Benutzung eines schwachen Magnetfeldes in verschiedenen Richtungen zu Pinnen. In einem Verfahrensschritt (a) wird eine zweite magnetische Schicht (13c) so ausgebildet, dass sie eine gröberes Ms·t als eine erste magnetische Schicht (13a) hat. Im Verfahrensschritt (b) wird für eine Schichtstruktur (20) eine Wärmebehandlung in einem Magnetfeld durchgeführt. In diesem Fall sind Richtungen, in denen Ströme durch leitfähige Bereiche (6) fließen, unterschiedlich, und äußere Magnetfelder werden in verschiedenen Richtungen auf Bereiche (A bis D) der Schichtstruktur (20) angewandt. Die zweite magnetische Schicht (13c) mit großem Ms·t kann durch Festlegen des äußeren Magnetfeldes auf ein schwaches Magnetfeld in der Richtung des angelegten Magnetfeldes magnetisiert werden. Dementsprechend wird die erste magnetische Schicht (13a) durch ein RKKY-Kopplungsmagnetfeld antiparallel zur zweiten magnetischen Schicht (13c) gepinnt. In einem Verfahrensschritt (c) wird ein Bereich der zweiten magnetischen Schicht (13c) abgeschnitten, um Ms·t der ersten magnetischen Schicht (13a) gleich Ms·t der zweiten magnetischen Schicht (13c) zu machen. Im Verfahrensschritt (d) werden eine Schicht (13b) aus nicht-magnetischem Material, eine freie magnetische Schicht (15) und eine Schutzschicht (16) ausgebildet, und in jedem Bereich wird ein Magneterkennungselement (2, 3, 4, 5) musterförmig ausgebildet.

8. 发明专利

JPH08124745A THIN FILM CIRCUIT AND ITS MANUFACTURE 失效
公开(公告)号：JPH08124745A
公开(公告)日：1996-05-17
申请号：JP28449394
申请日：1994-10-24
申请人： ALPS ELECTRIC CO LTD
发明人： KAWAMURA MASAHIRO
IPC分类号： H01F41/04 , H01F17/00
摘要： PURPOSE: To prevent the influence of the variation of the cross-sectional shapes of conductor layers and resistor layers having prescribed shapes on the electrical characteristics of a thin film circuit in which the conductor layers and resistor layers are formed at the time of forming films. CONSTITUTION: After a metallic base film 12 is formed on a substrate 10, resist layers 11 are formed on the film 12 in a prescribed pattern. Then conductor layers La-Ld and Lp1 are formed by plating between each resist layer 11. A thin film coil body is formed of the conductor layers La, Lb, and Lc. Part of the cross section of the outermost conductor layer Ld tends to become thicker due to an internal stress in the plating process. Therefore, the outermost layer Ld is not used as a conductive layer, but as a dummy line. Accordingly, the cross-sectional shapes of the conductor layers La, Lb, and Lc constituting the thin film circuit are stabilized and the inductance fluctuation of the circuit can be reduced.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式