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1. 发明申请

US20090078883A1 TECHNIQUES FOR OPTICAL ION BEAM METROLOGY 有权
标题翻译：光离子束计量技术
公开(公告)号：US20090078883A1
公开(公告)日：2009-03-26
申请号：US11859219
申请日：2007-09-21
申请人： Alexander S. Perel , Wilhelm Platow , Craig Chaney , Frank Sinclair , Tyler Rockwell
发明人： Alexander S. Perel , Wilhelm Platow , Craig Chaney , Frank Sinclair , Tyler Rockwell
IPC分类号： G21K1/00
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/2445 , H01J2237/24507 , H01J2237/24542 , H01J2237/2482 , H01J2237/30472
摘要： Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.
摘要翻译：公开了提供光学离子束计量的技术。在一个特定的示例性实施例中，技术可以被实现为用于控制光束密度分布的装置，该装置可以包括一个或多个相机系统以捕获离子束的至少一个图像和耦合到一个或多个相机的控制系统用于控制离子束的束密度分布的系统。控制系统还可以包括剂量分析器，以在反馈环路和前馈环路中的至少一个中向一个或多个离子注入组件提供信息，以改善剂量和角度均匀性。

2. 发明授权

US07723697B2 Techniques for optical ion beam metrology 有权
标题翻译：光离子束计量技术
公开(公告)号：US07723697B2
公开(公告)日：2010-05-25
申请号：US11859219
申请日：2007-09-21
申请人： Alexander S. Perel , Wilhelm Platow , Craig Chaney , Frank Sinclair , Tyler Rockwell
发明人： Alexander S. Perel , Wilhelm Platow , Craig Chaney , Frank Sinclair , Tyler Rockwell
IPC分类号： G01K11/00 , G21K5/02 , G21K5/10
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/2445 , H01J2237/24507 , H01J2237/24542 , H01J2237/2482 , H01J2237/30472
摘要： Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.
摘要翻译：公开了提供光学离子束计量的技术。在一个特定的示例性实施例中，技术可以被实现为用于控制光束密度分布的装置，该装置可以包括一个或多个相机系统以捕获离子束的至少一个图像和耦合到一个或多个相机的控制系统用于控制离子束的束密度分布的系统。控制系统还可以包括剂量分析器，以在反馈环路和前馈环路中的至少一个中向一个或多个离子注入组件提供信息，以改善剂量和角度均匀性。

3. 发明授权

US08263944B2 Directional gas injection for an ion source cathode assembly 有权
标题翻译：离子源阴极组件的定向气体注入
公开(公告)号：US08263944B2
公开(公告)日：2012-09-11
申请号：US12340812
申请日：2008-12-22
申请人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
发明人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
IPC分类号： H01J27/00
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/061
摘要： In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
摘要翻译：在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命资源。

4. 发明申请

US20100155619A1 DIRECTIONAL GAS INJECTION FOR AN ION SOURCE CATHODE ASSEMBLY 有权
标题翻译：用于阴离子阴极组件的方向气体注入
公开(公告)号：US20100155619A1
公开(公告)日：2010-06-24
申请号：US12340812
申请日：2008-12-22
申请人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
发明人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
IPC分类号： H01J27/00 , H01J27/02
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/061
摘要： In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
摘要翻译：在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命资源。

5. 发明授权

US08330127B2 Flexible ion source 有权
标题翻译：柔性离子源
公开(公告)号：US08330127B2
公开(公告)日：2012-12-11
申请号：US12080028
申请日：2008-03-31
申请人： Russell J. Low , Jay T. Scheuer , Alexander S. Perel , Craig R. Chaney , Neil J. Bassom
发明人： Russell J. Low , Jay T. Scheuer , Alexander S. Perel , Craig R. Chaney , Neil J. Bassom
IPC分类号： G21K5/00
CPC分类号： H01J27/022 , H01J37/04 , H01J37/08 , H01J37/16 , H01J2237/082
摘要： Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
摘要翻译：公开了用于保护离子源壳体的衬垫元件并且还提高了离子源的功率效率。将优选由钨构成的两个衬垫元件插入到离子源室中，一个放置在两个侧壁中的每一个上。这些插入物被电偏置以便引起垂直于所施加的磁场的电场。已经意外地发现这种布置不仅增加了离子室壳体的寿命，而且延长了间接加热的阴极（IHC）和排斥器的使用寿命。此外，使用这些偏置的衬垫元件也提高了离子源的功率效率; 允许在给定功率水平下产生更多的离子，或者在较低功率水平下产生相等数量的离子。

6. 发明授权

US08071956B2 Cleaning of an extraction aperture of an ion source 有权
标题翻译：清洁离子源的提取孔
公开(公告)号：US08071956B2
公开(公告)日：2011-12-06
申请号：US12720933
申请日：2010-03-10
申请人： Craig R. Chaney , Alexander S. Perel , Leo V. Klos
发明人： Craig R. Chaney , Alexander S. Perel , Leo V. Klos
IPC分类号： H01J37/28
CPC分类号： H01J27/08 , B08B1/008 , H01J27/024 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024
摘要： An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.
摘要翻译：离子源包括限定具有提取孔的电弧室的电弧室壳体，以及擦拭器组件，其包括在处于停放位置的位于电弧室外部的擦拭器，并且构造成从停放位置驱动到操作位置以清洁提取孔。用于离子源的擦拭器组件包括擦拭器，其构造成当处于停放位置时定位在离子源的电弧室外部并且从停放位置驱动到操作位置以清洁离子源的提取孔。

7. 发明申请

US20090314962A1 METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER 有权
标题翻译：用于控制离子植入物中光束电流均匀性的方法和装置
公开(公告)号：US20090314962A1
公开(公告)日：2009-12-24
申请号：US12143144
申请日：2008-06-20
申请人： Rajesh DORAI , Peter F. Kurunczi , Alexander S. Perel , Wilhelm P. Platow
发明人： Rajesh DORAI , Peter F. Kurunczi , Alexander S. Perel , Wilhelm P. Platow
IPC分类号： H01J37/08 , G02B5/00
CPC分类号： H01J37/3171 , H01J37/04 , H01J37/08 , H01J37/09 , H01J2237/024 , H01J2237/0455 , H01J2237/08 , H01J2237/083 , H01J2237/0835 , H01J2237/24542
摘要： An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.
摘要翻译：一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。多个致动器连接到多个电极段，用于移动一个或多个段。通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

8. 发明申请

US20090242793A1 Flexible ion source 有权
标题翻译：柔性离子源
公开(公告)号：US20090242793A1
公开(公告)日：2009-10-01
申请号：US12080028
申请日：2008-03-31
申请人： Russell J. Low , Jay T. Scheuer , Alexander S. Perel , Craig R. Chaney , Neil J. Bassom
发明人： Russell J. Low , Jay T. Scheuer , Alexander S. Perel , Craig R. Chaney , Neil J. Bassom
IPC分类号： H01J27/02
CPC分类号： H01J27/022 , H01J37/04 , H01J37/08 , H01J37/16 , H01J2237/082
摘要： Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
摘要翻译：公开了用于保护离子源壳体的衬垫元件并且还提高了离子源的功率效率。将优选由钨构成的两个衬垫元件插入到离子源室中，一个放置在两个侧壁中的每一个上。这些插入物被电偏置以便引起垂直于所施加的磁场的电场。已经意外地发现这种布置不仅增加了离子室壳体的寿命，而且延长了间接加热的阴极（IHC）和排斥器的使用寿命。此外，使用这些偏置的衬垫元件也提高了离子源的功率效率; 允许在给定功率水平下产生更多的离子，或者在较低功率水平下产生相等数量的离子。

9. 发明授权

US06992311B1 In-situ cleaning of beam defining apertures in an ion implanter 有权
标题翻译：在离子注入机中定位孔的原位清洁
公开(公告)号：US06992311B1
公开(公告)日：2006-01-31
申请号：US11037491
申请日：2005-01-18
申请人： Philip J. Ring , Alexander S. Perel
发明人： Philip J. Ring , Alexander S. Perel
IPC分类号： H01J37/317 , H01J37/36
CPC分类号： H01J37/3171 , H01J2237/022
摘要： A method for cleaning an ion implantation, comprising providing an ion implantation system, wherein the ion implantation system comprises one or more components having one or more contaminants disposed thereon. A process species is provided to the ion implantation system, wherein the process species is otherwise utilized to implant ions into a workpiece. Ions are formed from the process species, therein defining an ion source. An ion beam is then extracted from the ion source via an application of an extraction voltage to an ion extraction assembly associated with the ion source. The extraction voltage is further modulated, wherein a trajectory of the ion beam is oscillated within a predetermined range. The ion beam is consequently swept across the one or more components, thus substantially removing the one or more contaminants therefrom.
摘要翻译：一种用于清洁离子注入的方法，包括提供离子注入系统，其中所述离子注入系统包括其上布置有一种或多种污染物的一种或多种组分。向离子注入系统提供过程物质，其中处理物质另外用于将离子注入到工件中。离子由过程物质形成，其中限定离子源。然后通过向与离子源相关联的离子提取组件施加提取电压从离子源提取离子束。提取电压被进一步调制，其中离子束的轨迹在预定范围内振荡。离子束因此扫过一个或多个组件，从而基本上从其中除去一种或多种污染物。

10. 发明授权

US06958481B2 Decaborane ion source 失效
标题翻译：十硼烷离子源
公开(公告)号：US06958481B2
公开(公告)日：2005-10-25
申请号：US09934785
申请日：2001-08-22
申请人： Thomas N. Horsky , Alexander S. Perel , William K. Loizides
发明人： Thomas N. Horsky , Alexander S. Perel , William K. Loizides
IPC分类号： H01J37/30 , H01J27/08 , H01J27/16 , H01J37/08 , H01J37/317 , H01J27/00 , H61N5/00
CPC分类号： H01J27/08
摘要： An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.) during ionization of the vaporized decaborane to prevent dissociation of vaporized decaborane molecules into atomic boron ions. In addition, the energy-emitting element is operated at a sufficiently low power level to minimize plasma density within the ionization chamber (108) to prevent additional dissociation of the vaporized decaborane molecules by the plasma itself.
摘要翻译：提供了一种用于离子注入机的离子源（50），其包括位于远处的蒸发器（51）和通过进料管（62）连接到蒸发器的离子发生器（53）。蒸发器包括用于接收诸如十硼烷的固体源材料和升华（蒸发）十硼烷的升华器（52）。提供加热机构用于加热升华器和将升华器连接到离子发生器的进料管，以保持蒸发的十硼烷的合适温度。电离器（53）包括具有用于接收蒸发的十硼烷的入口（119）的主体（96）电离室（108），其中蒸发的十硼烷可以被能量发射元件（110）电离以产生等离子体; 以及用于提取由等离子体组成的离子束的出射孔（126）。提供冷却机构（100,104），用于在蒸发的十硼烷的电离期间降低电离室（108）的壁（128）的温度（例如，低于350℃），以防止汽化的十硼烷分子分解成原子硼离子此外，能量发射元件以足够低的功率水平操作以最小化电离室（108）内的等离子体密度，以防止蒸发的十硼烷分子由等离子体本身的附加解离。

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