会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Flexible ion source
    • 柔性离子源
    • US08330127B2
    • 2012-12-11
    • US12080028
    • 2008-03-31
    • Russell J. LowJay T. ScheuerAlexander S. PerelCraig R. ChaneyNeil J. Bassom
    • Russell J. LowJay T. ScheuerAlexander S. PerelCraig R. ChaneyNeil J. Bassom
    • G21K5/00
    • H01J27/022H01J37/04H01J37/08H01J37/16H01J2237/082
    • Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
    • 公开了用于保护离子源壳体的衬垫元件并且还提高了离子源的功率效率。 将优选由钨构成的两个衬垫元件插入到离子源室中,一个放置在两个侧壁中的每一个上。 这些插入物被电偏置以便引起垂直于所施加的磁场的电场。 已经意外地发现这种布置不仅增加了离子室壳体的寿命,而且延长了间接加热的阴极(IHC)和排斥器的使用寿命。 此外,使用这些偏置的衬垫元件也提高了离子源的功率效率; 允许在给定功率水平下产生更多的离子,或者在较低功率水平下产生相等数量的离子。
    • 9. 发明申请
    • TECHNIQUES FOR GENERATING UNIFORM ION BEAM
    • 用于产生均匀离子束的技术
    • US20110143527A1
    • 2011-06-16
    • US12964357
    • 2010-12-09
    • Wilhelm P. PLATOWNeil J. BassomPeter F. KuruncziAlexander S. PerelCraig R. Chaney
    • Wilhelm P. PLATOWNeil J. BassomPeter F. KuruncziAlexander S. PerelCraig R. Chaney
    • H01L21/265H01J37/317H01J37/02
    • H01J37/08H01J37/3171
    • Herein an improved technique for generating uniform ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion implanter comprising an ion source. The method may comprise: introducing dopant into an ion source chamber of the ion source, the dopant may comprise molecules containing boron and hydrogen; introducing diluent into the ion source chamber, the diluent containing halogen; ionizing the dopant and the diluent into molecular ions and halogen containing ions, the molecular ions containing boron and hydrogen; extracting the molecular ions and the halogen containing ions from the ions source chamber; and directing the molecular ions toward the substrate, where the halogen containing ions may improve uniformity of the molecular ions extracted from the ion source and extend the lifetime of the ion source.
    • 本发明公开了一种用于产生均匀离子束的改进技术。 在一个特定的示例性实施例中,该技术可以被实现为用于使用包括离子源的离子注入机来处理衬底的方法。 该方法可以包括:将掺杂剂引入到离子源的离子源室中,掺杂剂可以包含含有硼和氢的分子; 将稀释剂引入离子源室,稀释剂含有卤素; 将掺杂剂和稀释剂电离成分子离子和含卤素的离子,含有硼和氢的分子离子; 从离子源室中提取分子离子和含卤素离子; 并且将分子离子引导到衬底,其中含卤素的离子可以改善从离子源提取的分子离子的均匀性并延长离子源的寿命。