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    • 2. 发明授权
    • Adjustable conductance limiting aperture for ion implanters
    • 离子注入机可调电导限制孔径
    • US06791097B2
    • 2004-09-14
    • US10050743
    • 2002-01-16
    • Jay T. ScheuerAnthony RenauEric D. Hermanson
    • Jay T. ScheuerAnthony RenauEric D. Hermanson
    • H01J3708
    • H01J37/16H01J37/3171H01J2237/045H01J2237/188
    • A charged particle beam apparatus includes a charged particle beam source for directing a charged particle beam along a beam path in a downstream direction to a target, and a processing station that defines a target chamber. The processing station includes a chamber divider which divides the target chamber into upstream and downstream regions during charged particle beam processing of the target, the target being located in the downstream region. The divider has an aperture therethrough sized to permit passage of the ion beam to the target without substantial blockage and to limit backflow of gas into the upstream region of the chamber. The divider minimizes the beam volume which is exposed to extraneous species generated at the target and thereby reduces the probability of beam-altering collisions.
    • 带电粒子束装置包括用于将带电粒子束沿着沿着下游方向的光束路径引导到目标的带电粒子束源,以及限定目标腔室的处理站。 处理站包括一个室分隔器,其在靶的带电粒子束处理期间将目标室分成上游和下游区域,目标位于下游区域。 分隔器具有穿过其中的孔,其尺寸允许离子束通过靶,而不会实质阻塞,并限制气体回流到腔室的上游区域。 分隔器最小化暴露于在目标处产生的外来物种的光束体积,从而降低光束变化碰撞的可能性。
    • 4. 发明申请
    • RF electron source for ionizing gas clusters
    • 用于电离气体簇的RF电子源
    • US20090166555A1
    • 2009-07-02
    • US12005757
    • 2007-12-28
    • Joseph C. OlsonJay T. Scheuer
    • Joseph C. OlsonJay T. Scheuer
    • H01J27/00
    • H01J27/18H01J27/026H01J37/08H01J37/30H01J37/31H01J2237/061H01J2237/06366H01J2237/0812H01J2237/31701
    • The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.
    • 本发明公开了一种具有非常低金属污染物的气体簇离子束(GCIB)的系统和方法。 气体簇离子束系统受到高金属污染的困扰,从而影响其在许多应用中的应用。 这种污染是由使用热离子源引起的,因为它们赋予污染物,并且由于它们升高的工作温度也容易产生短暂的生命周期。 虽然较早的修改集中在尽可能多地将源极气体簇隔离,但本发明通过完全消除热离子源代表了显着的进步。 在优选实施例中,电感耦合等离子体和电离区取代现有技术的热离子源和离子发生器。 通过使用RF或微波频率电磁波,可以在没有灯丝的情况下产生等离子体,从而消除金属污染物的主要贡献者。
    • 6. 发明授权
    • Flexible ion source
    • 柔性离子源
    • US08330127B2
    • 2012-12-11
    • US12080028
    • 2008-03-31
    • Russell J. LowJay T. ScheuerAlexander S. PerelCraig R. ChaneyNeil J. Bassom
    • Russell J. LowJay T. ScheuerAlexander S. PerelCraig R. ChaneyNeil J. Bassom
    • G21K5/00
    • H01J27/022H01J37/04H01J37/08H01J37/16H01J2237/082
    • Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
    • 公开了用于保护离子源壳体的衬垫元件并且还提高了离子源的功率效率。 将优选由钨构成的两个衬垫元件插入到离子源室中,一个放置在两个侧壁中的每一个上。 这些插入物被电偏置以便引起垂直于所施加的磁场的电场。 已经意外地发现这种布置不仅增加了离子室壳体的寿命,而且延长了间接加热的阴极(IHC)和排斥器的使用寿命。 此外,使用这些偏置的衬垫元件也提高了离子源的功率效率; 允许在给定功率水平下产生更多的离子,或者在较低功率水平下产生相等数量的离子。
    • 9. 发明授权
    • Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping
    • 装有静电夹具,晶圆背面气体冷却和等离子体掺杂的高压操作能力的晶片压板
    • US07126808B2
    • 2006-10-24
    • US10816289
    • 2004-04-01
    • Bon-Woong KooBjorn O. PedersenJay T. ScheuerErik A. Mitchell
    • Bon-Woong KooBjorn O. PedersenJay T. ScheuerErik A. Mitchell
    • H02H1/00
    • H01L21/67109H01L21/67069H01L21/6831Y10T279/23
    • An apparatus is provided for handling workpieces, such as semiconductor wafers, during semiconductor processing. The apparatus includes a wafer platen having a plurality of channels each extending from a top surface to a bottom surface of the wafer platen, a plurality of lift pins in alignment with the channels, and a mechanism for engaging the lift pins in a loading position of the workpiece, a clamping position of the workpiece so that desired semiconductor processes may be performed to the workpiece, and a lift off position for removing the workpiece from the wafer platen after the semiconductor processes are completed. The mechanism places the lift pins below the surface of the wafer platen in the load position and then raises the lift pins to a first predetermined distance above the surface of the wafer platen in the clamp position such that the first predetermined distance allows the workpiece to be clamped to the wafer platen. Then, the mechanism places the lift pins at a second predetermined distance above the surface of the wafer platen in the lift off position such that a workpiece removing device, such as a robotic arm, may be positioned between the workpiece and the wafer platen without contacting either surface.
    • 在半导体处理期间提供一种用于处理诸如半导体晶片的工件的装置。 该装置包括具有多个通道的晶片压板,每个通道从晶片压板的顶表面延伸到底表面,多个提升销与通道对准,以及用于将升降销接合在装载位置 工件,工件的夹紧位置,从而可以对工件执行所需的半导体工艺,以及用于在半导体工艺完成之后从晶片压板移除工件的剥离位置。 该机构将升降销放置在晶片压板的表面下方处于装载位置,然后将提升销提升到夹具位置上的晶片压板表面之上的第一预定距离,使得第一预定距离允许工件为 夹在晶圆台板上。 然后,该机构将提升销放置在提升离开位置上方的晶片台板表面上方第二预定距离处,使得诸如机器臂的工件移除装置可以位于工件和晶片压板之间而不接触 任一表面。