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1. 发明申请

US20120000606A1 PLASMA UNIFORMITY SYSTEM AND METHOD 审中-公开
标题翻译：等离子体均匀系统和方法
公开(公告)号：US20120000606A1
公开(公告)日：2012-01-05
申请号：US12829497
申请日：2010-07-02
申请人： Rajesh Dorai , Kamal Hadidi , Mayur Jagtap
发明人： Rajesh Dorai , Kamal Hadidi , Mayur Jagtap
IPC分类号： C23F1/08 , C23C16/50 , H05B31/02 , C23C16/458
CPC分类号： H01J37/32633 , H01J37/32412 , H01J37/32532
摘要： A plasma processing tool comprises a plasma chamber configured to generate a plasma from a gas introduced into the chamber where the generated plasma has an electron plasma frequency. A plurality of electrodes disposed within the chamber. Each of the electrodes configured to create a rapidly-rising-electric-field pulse in a portion of the plasma contained in the chamber. Each of said rapidly-rising-electric-field pulses having a rise time substantially equal to or less than the inverse of the electron plasma frequency and a duration of less than the inverse of the ion plasma frequency. In this manner, the electron energy distribution in the generated plasma may be spatially and locally modified thereby affecting the density, composition and temperature of the species in the plasma and consequently the uniformity of the density and composition of ions and neutrals directed at a target substrate.
摘要翻译：等离子体处理工具包括等离子体室，其被配置为从引入室中的气体产生等离子体，其中产生的等离子体具有电子等离子体频率。设置在室内的多个电极。每个电极被配置为在腔室中包含的等离子体的一部分中产生快速上升的电场脉冲。所述快速上升电场脉冲中的每一个具有基本上等于或小于电子等离子体频率的倒数的上升时间和小于离子等离子体频率的倒数的持续时间。以这种方式，所产生的等离子体中的电子能量分布可以在空间上和局部改变，从而影响等离子体中物质的密度，组成和温度，从而影响靶向靶基质的离子和中性粒子的密度和组成的均匀性。

2. 发明申请

US20090309041A1 TECHNIQUES FOR PROVIDING A MULTIMODE ION SOURCE 有权
标题翻译：提供多个离子源的技术
公开(公告)号：US20090309041A1
公开(公告)日：2009-12-17
申请号：US12137225
申请日：2008-06-11
申请人： Peter Kurunczi , Rajesh Dorai , Costel Biloiu , Wilhelm Platow
发明人： Peter Kurunczi , Rajesh Dorai , Costel Biloiu , Wilhelm Platow
IPC分类号： H01J27/02 , G21K5/00
CPC分类号： H01J37/08 , H01J27/08 , H01J27/16 , H01J37/3171 , H01J2237/061 , H01J2237/0817 , H01J2237/082 , H01J2237/0827 , H01J2237/304
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.
摘要翻译：公开了提供多模离子源的技术。在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。

3. 发明申请

US20120256614A1 TECHNIQUE FOR LIMITING FAULT CURRENT TRANSMISSION 审中-公开
标题翻译：限制故障电流传输的技术
公开(公告)号：US20120256614A1
公开(公告)日：2012-10-11
申请号：US13399658
申请日：2012-02-17
申请人： Frank Sinclair , Rajesh Dorai
发明人： Frank Sinclair , Rajesh Dorai
IPC分类号： H02H9/02 , H01F38/00 , H01F27/28 , H01F17/04 , H01F27/24 , B82Y15/00
CPC分类号： H02H9/021 , H01F38/023
摘要： A technique for limiting fault current transmission is disclosed. In one particular exemplary embodiment, the technique may be realized with a fault current limiter comprising a core having at least first easy axis and a hard axis; and a first coil wound around the core, the first coil configured to carry current. In some embodiment, the easy axis of the core may be aligned with H fields generated by the current transmitted through the first coil.
摘要翻译：公开了限制故障电流传输的技术。在一个特定的示例性实施例中，该技术可以利用包括具有至少第一容易轴和硬轴的芯的故障限流器来实现; 以及围绕所述芯缠绕的第一线圈，所述第一线圈构造成承载电流。在一些实施例中，芯的容易轴可以与通过第一线圈传输的电流产生的H场对准。

4. 发明授权

US07767986B2 Method and apparatus for controlling beam current uniformity in an ion implanter 有权
标题翻译：用于控制离子注入机中束流均匀性的方法和装置
公开(公告)号：US07767986B2
公开(公告)日：2010-08-03
申请号：US12143144
申请日：2008-06-20
申请人： Rajesh Dorai , Peter F. Kurunczi , Alexander S. Perel , Wilhelm P. Platow
发明人： Rajesh Dorai , Peter F. Kurunczi , Alexander S. Perel , Wilhelm P. Platow
IPC分类号： H01J37/08 , H01J37/15 , H01J27/02
CPC分类号： H01J37/3171 , H01J37/04 , H01J37/08 , H01J37/09 , H01J2237/024 , H01J2237/0455 , H01J2237/08 , H01J2237/083 , H01J2237/0835 , H01J2237/24542
摘要： An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.
摘要翻译：一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。多个致动器连接到多个电极段，用于移动一个或多个段。通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

5. 发明授权

US07132672B2 Faraday dose and uniformity monitor for plasma based ion implantation 有权
标题翻译：法拉第剂量和均匀度监测器用于等离子体离子注入
公开(公告)号：US07132672B2
公开(公告)日：2006-11-07
申请号：US10817755
申请日：2004-04-02
申请人： Steven R. Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn O. Pedersen , Chris Leavitt , Timothy Miller
发明人： Steven R. Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn O. Pedersen , Chris Leavitt , Timothy Miller
IPC分类号： H01J37/244
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/3299 , H01J2237/24405
摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.
摘要翻译：法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。狭窄的孔径可以减少法拉第杯开口内的排放。环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

6. 发明申请

US20050223991A1 Faraday dose and uniformity monitor for plasma based ion implantation 有权
标题翻译：法拉第剂量和均匀度监测器用于等离子体离子注入
公开(公告)号：US20050223991A1
公开(公告)日：2005-10-13
申请号：US10817755
申请日：2004-04-02
申请人： Steven Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn Pedersen , Chris Leavitt , Timothy Miller
发明人： Steven Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn Pedersen , Chris Leavitt , Timothy Miller
IPC分类号： H01J37/244 , H01J37/32 , C23C14/48
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/3299 , H01J2237/24405
摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.
摘要翻译：法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。狭窄的孔径可以减少法拉第杯开口内的排放。环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

7. 发明申请

US20090124066A1 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 有权
公开(公告)号：US20090124066A1
公开(公告)日：2009-05-14
申请号：US12269344
申请日：2008-11-12
申请人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
发明人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
IPC分类号： H01L21/20
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

8. 发明申请

US20080087839A1 TECHNIQUE FOR CONFINING SECONDARY ELECTRONS IN PLASMA-BASED ION IMPLANTATION 失效
标题翻译：限制基于等离子体离子植入的二次电子技术
公开(公告)号：US20080087839A1
公开(公告)日：2008-04-17
申请号：US11550140
申请日：2006-10-17
申请人： Rajesh DORAI
发明人： Rajesh DORAI
IPC分类号： H01J1/50
CPC分类号： H01J37/3266 , H01J37/32412 , H01J2237/0045
摘要： A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.
摘要翻译：公开了一种限制二次电子在晶片上的技术。在一个特定的示例性实施例中，该技术可以被实现为用于限制基于等离子体的离子注入中的二次电子的装置和方法。该装置和方法可以包括放置在目标晶片之下的磁场结构的磁场部分，用于在目标晶片上产生用于限制目标晶片上的二次电子的磁场。该装置和方法还可以包括基本上平行于目标晶片的上表面的目标晶片上方的磁场。该装置和方法可以另外包括磁场部分，其包括多个线圈，一个或多个载流导线和多个磁体中的至少一个。

9. 发明申请

US20060236931A1 Tilted Plasma Doping 审中-公开
标题翻译：倾斜等离子体兴奋剂
公开(公告)号：US20060236931A1
公开(公告)日：2006-10-26
申请号：US10908009
申请日：2005-04-25
申请人： Vikram Singh , James Buff , Rajesh Dorai
发明人： Vikram Singh , James Buff , Rajesh Dorai
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/32009 , H01J37/32752
摘要： A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.
摘要翻译：等离子体掺杂装置包括腔室和等离子体源，其在腔室中从掺杂气体产生离子。光栅位于腔室中。用于支撑靶的压板位于腔室中。光栅和靶中的至少一个被定向成使得从光栅提取的掺杂离子以非正常的入射角撞击靶。

10. 发明授权

US08692468B2 Transformer-coupled RF source for plasma processing tool 有权
标题翻译：用于等离子体处理工具的变压器耦合射频源
公开(公告)号：US08692468B2
公开(公告)日：2014-04-08
申请号：US13251819
申请日：2011-10-03
申请人： Kamal Hadidi , Rajesh Dorai
发明人： Kamal Hadidi , Rajesh Dorai
IPC分类号： H01J7/24
CPC分类号： H01J37/08 , H01J37/321 , H01J37/3211 , H01J37/32357 , H01J37/32422
摘要： A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.
摘要翻译：公开了RF源和方法，其在外壳内感应地产生等离子体而没有电场或显着减少电场的产生。使用缠绕在其本体上的具有绝缘线的铁氧体材料来有效地将磁场通过铁氧体的腿引导。然后，可以使用在铁氧体的腿部之间流动的磁场来产生和维持等离子体。在一个实施例中，这些腿搁置在电介质窗口上，使得磁场进入腔室。在另一个实施例中，铁氧体的腿延伸到处理室中，从而进一步将磁场延伸到腔室中。该铁氧体可以与PLAD室或用于传统束线离子注入系统的离子源结合使用。

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