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    • 1. 发明授权
    • Well-based dynamic pattern generator
    • 基于良好的动态模式生成器
    • US08253119B1
    • 2012-08-28
    • US12510049
    • 2009-07-27
    • Alan D. BrodiePaul PetricMark A. McCord
    • Alan D. BrodiePaul PetricMark A. McCord
    • G01N23/00G21K1/02G21K1/08
    • H01J37/3175B82Y10/00B82Y40/00H01J37/3177H01J2237/31789
    • One embodiment relates to an apparatus of a dynamic pattern generator for reflection electron beam lithography. The apparatus includes a plurality of base electrodes in a two-dimensional array, an insulating border surrounding each base electrode so as to electrically isolate the base electrodes from each other; and a sidewall surrounding each base electrode. The sidewall comprises a plurality of stacked electrodes which are separated by insulating layers. In addition, the base electrodes are advantageously shaped so as to be concave. Furthermore, a conformal coating may be advantageously applied over the base electrodes and sidewalls. Another embodiment relates to an apparatus for reflection electron beam lithography. The apparatus includes a shadow mask configured to form an array of incident electron beamlets. The shadow mask comprises an array of holes which correspond one-to-one with an array of pixel pads of an electron reflective patterned structure. Other embodiments, aspects and features are disclosed.
    • 一个实施例涉及用于反射电子束光刻的动态图案发生器的装置。 该装置包括二维阵列中的多个基极电极,围绕每个基极的绝缘边界,以将基极电极彼此电隔离; 以及围绕每个基极的侧壁。 侧壁包括由绝缘层分离的多个堆叠电极。 此外,基底电极有利地成形为凹形。 此外,可以有利地在基极和侧壁上施加保形涂层。 另一实施例涉及一种用于反射电子束光刻的装置。 该装置包括配置成形成入射电子束阵列的荫罩。 荫罩包括与电子反射图案化结构的像素焊盘的阵列一一对应的孔阵列。 公开了其它实施例,方面和特征。
    • 2. 发明授权
    • Method and apparatus for beam current fluctuation correction
    • 射束电流波动校正的方法和装置
    • US07091486B1
    • 2006-08-15
    • US10938841
    • 2004-09-09
    • Mark A. McCordAlan D. Brodie
    • Mark A. McCordAlan D. Brodie
    • G01N23/00G21K7/00
    • G01N23/04B82Y10/00B82Y40/00H01J37/09H01J37/24H01J37/244H01J37/28H01J37/3174
    • One embodiment disclosed relates to an electron beam imaging apparatus. An electron source is configured to generate an electron beam, and a beam-limiting aperture is configured to block a portion of the electron beam and to allow transmission of another portion of the electron beam through the aperture. A first detector is configured to detect scattered electrons emitted by the aperture due to the blocked portion of the electron beam. The imaging apparatus may also include a second detector configured to detect scattered electrons emitted by the sample due to impingement of the transmitted portion of the electron beam. A gain control device may also be included to adjust a gain of a detected signal derived from the second detector using a control signal derived from the first detector. Another embodiment disclosed relates to an electron beam lithography apparatus. The lithography apparatus may adjust a pixel dwell time based on a control signal derived from the scattered electrons emitted by the aperture.
    • 公开的一个实施例涉及一种电子束成像装置。 电子源被配置为产生电子束,并且束限制孔被配置为阻挡电子束的一部分并且允许电子束的另一部分通过孔传播。 第一检测器被配置为检测由于电子束的阻挡部分而由孔发射的散射电子。 成像装置还可以包括第二检测器,其被配置为检测由于电子束的透射部分的撞击而由样品发射的散射电子。 还可以包括增益控制装置,以使用从第一检测器导出的控制信号来调整从第二检测器导出的检测信号的增益。 所公开的另一实施例涉及电子束光刻设备。 光刻设备可以基于从孔径发射的散射电子得到的控制信号来调整像素驻留时间。
    • 4. 发明授权
    • Electron reflector with multiple reflective modes
    • 具有多种反射模式的电子反射镜
    • US08089051B2
    • 2012-01-03
    • US12711966
    • 2010-02-24
    • Luca GrellaRegina FreedMark A. McCord
    • Luca GrellaRegina FreedMark A. McCord
    • G21K1/08
    • H01J37/3175B82Y10/00B82Y40/00H01J2237/31789
    • One embodiment relates to a method of controllably reflecting electrons from an array of electron reflectors. An incident electron beam is formed from an electron source, and the incident beam is directed to the array of electron reflectors. A first plurality of the reflectors is configured to reflect electrons in a first reflective mode such that the reflected electrons exiting the reflector form a focused beam. A second plurality of the reflectors is configured to reflect electrons in a second reflective mode such that the reflected electrons exiting the reflector are defocused. Another embodiment relates to an apparatus of a dynamic pattern generator for reflection electron beam lithography. Other embodiments, aspects and features are also disclosed.
    • 一个实施例涉及从电子反射器阵列可控地反射电子的方法。 入射电子束由电子源形成,入射光束被引导到电子反射体阵列。 第一多个反射器被配置为以第一反射模式反射电子,使得离开反射器的反射电子形成聚焦光束。 第二多个反射器被配置为以第二反射模式反射电子,使得离开反射器的反射电子散焦。 另一个实施例涉及用于反射电子束光刻的动态图案发生器的装置。 还公开了其它实施例,方面和特征。
    • 6. 发明授权
    • Method for charging substrate to a potential
    • 将基板充电到电位的方法
    • US07176468B2
    • 2007-02-13
    • US10942184
    • 2004-09-16
    • Kirk J. BertscheMark A. McCord
    • Kirk J. BertscheMark A. McCord
    • H01J37/244
    • G21K7/00H01J37/026H01J2237/0045H01J2237/0048
    • A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating is substrate to a target potential.
    • 将绝缘基板的表面充电至目标电位。 在一个实施方案中,表面充满了较高能量的电子束,使得电子产率大于1。 随后,表面被低能电子束淹没,使得电子产率小于1。 在另一个实施例中,衬底被提供有处于大于目标电位的初始电位的状态的表面。 然后用带电粒子充满表面,使得散射颗粒的电荷产率小于1,使得达到达到目标电势的稳定状态。 另一个实施例涉及一种用于将绝缘体的表面充电至靶电位的装置。
    • 8. 发明授权
    • Suspended membrane calibration sample
    • 悬浮膜校准样品
    • US08614427B1
    • 2013-12-24
    • US10195638
    • 2002-07-15
    • Mark A. McCordLiqun Han
    • Mark A. McCordLiqun Han
    • G01N23/00
    • G01N23/225G01N2223/303G01N2223/611
    • One embodiment disclosed relates to a method for fabricating a calibration sample. The method includes lithographically patterning a first side of a wafer with a pattern of a self-supporting membrane, etching the first side of the wafer to form the self-supporting membrane in a layer on the first side, and etching a second side of the wafer to reach the layer so as to suspend the membrane over an empty space. Another embodiment disclosed relates to a charged particle beam system. The system includes a charged particle source, a focusing column and lens assembly, a detector, and a suspended membrane calibration sample. Another embodiment disclosed relates a suspended membrane calibration sample for a charged particle beam system. The calibration sample includes a plurality of calibration patterns in an array, a suspended membrane that is self-supporting and includes the plurality of calibration patterns, and an empty space underneath the membrane.
    • 公开的一个实施例涉及一种用于制造校准样品的方法。 该方法包括利用自支撑膜的图案将晶片的第一侧光刻图案化,蚀刻晶片的第一侧以在第一侧上的层中形成自支撑膜,并且蚀刻第二面 晶片到达该层,以便将膜悬挂在空的空间上。 所公开的另一实施例涉及带电粒子束系统。 该系统包括带电粒子源,聚焦柱和透镜组件,检测器和悬浮膜校准样品。 所公开的另一实施例涉及用于带电粒子束系统的悬浮膜校准样品。 校准样品包括阵列中的多个校准图案,自支撑并包括多个校准图案的悬浮膜和膜下方的空白空间。
    • 10. 发明授权
    • In-situ probe for optimizing electron beam inspection and metrology based on surface potential
    • 基于表面电位优化电子束检测和计量的原位探针
    • US06664546B1
    • 2003-12-16
    • US09502554
    • 2000-02-10
    • Mark A. McCordJan LauberJun PeiJorge P. Fernandez
    • Mark A. McCordJan LauberJun PeiJorge P. Fernandez
    • H01J3721
    • H01J37/28H01J2237/004H01J2237/2594H01J2237/2814H01J2237/2817
    • Disclosed is a method and apparatus for generating an image from a sample. The apparatus includes a charged particle beam generator arranged to generate and control a charged particle beam substantially towards a portion of the sample and a detector arranged to detect charged particles originating from the sample portion to allow generation of an image from the detected charged particles. The apparatus further includes a measurement device arranged to measure a characteristic of the sample portion to obtain a surface voltage value of the sample portion that is exposed to the charged particle beam. For example, the measurement device is an electrostatic voltmeter positioned to obtain a surface voltage value of the exposed sample portion. A charged particle beam is directed substantially towards a portion of the sample under a first set of operating conditions. A surface charge value of the sample portion is obtained under the first set of operating conditions. It is then determined whether an optimum set of operating conditions associated with a predetermined surface charge value have been found. When the optimum conditions have not been found, the operating conditions are adjusted and the charged particle beam is directed substantially towards the sample portion. When the optimum conditions have been found, the charged particle beam is directed substantially towards the sample portion under the found optimum operating conditions.
    • 公开了一种用于从样本生成图像的方法和装置。 该装置包括带电粒子束发生器,其布置成基本上朝向样品的一部分产生并控制带电粒子束;以及检测器,被布置成检测源自样品部分的带电粒子,以允许从检测到的带电粒子产生图像。 该装置还包括测量装置,其被配置为测量样品部分的特性以获得暴露于带电粒子束的样品部分的表面电压值。 例如,测量装置是定位成获得暴露的样品部分的表面电压值的静电电压表。 在第一组操作条件下,带电粒子束基本上指向样品的一部分。 在第一组操作条件下获得样品部分的表面电荷值。 然后确定是否已经找到与预定表面电荷值相关联的最佳操作条件集合。 当没有发现最佳条件时,调节操作条件并且带电粒子束基本上朝向样品部分。 当已经找到最佳条件时,在找到的最佳操作条件下,带电粒子束基本上指向样品部分。