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    • 1. 发明授权
    • Electron reflector with multiple reflective modes
    • 具有多种反射模式的电子反射镜
    • US08089051B2
    • 2012-01-03
    • US12711966
    • 2010-02-24
    • Luca GrellaRegina FreedMark A. McCord
    • Luca GrellaRegina FreedMark A. McCord
    • G21K1/08
    • H01J37/3175B82Y10/00B82Y40/00H01J2237/31789
    • One embodiment relates to a method of controllably reflecting electrons from an array of electron reflectors. An incident electron beam is formed from an electron source, and the incident beam is directed to the array of electron reflectors. A first plurality of the reflectors is configured to reflect electrons in a first reflective mode such that the reflected electrons exiting the reflector form a focused beam. A second plurality of the reflectors is configured to reflect electrons in a second reflective mode such that the reflected electrons exiting the reflector are defocused. Another embodiment relates to an apparatus of a dynamic pattern generator for reflection electron beam lithography. Other embodiments, aspects and features are also disclosed.
    • 一个实施例涉及从电子反射器阵列可控地反射电子的方法。 入射电子束由电子源形成,入射光束被引导到电子反射体阵列。 第一多个反射器被配置为以第一反射模式反射电子,使得离开反射器的反射电子形成聚焦光束。 第二多个反射器被配置为以第二反射模式反射电子,使得离开反射器的反射电子散焦。 另一个实施例涉及用于反射电子束光刻的动态图案发生器的装置。 还公开了其它实施例,方面和特征。
    • 2. 发明授权
    • Dynamic pattern generator with cup-shaped structure
    • 具有杯形结构的动态图案发生器
    • US07755061B2
    • 2010-07-13
    • US11983069
    • 2007-11-07
    • Luca GrellaLeonid BaranovYehiel Gotkis
    • Luca GrellaLeonid BaranovYehiel Gotkis
    • G21K1/02
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/0435H01J2237/0453
    • One embodiment relates to a dynamic pattern generator for reflection electron beam lithography which includes conductive pixel pads, an insulative border surrounding each conductive pixel pad so as to electrically isolate the conductive pixel pads from each other, and conductive elements coupled to the conductive pixel pads for controllably applying voltages to the conductive pixel pads. The conductive pixel pads are advantageously cup shaped with a bottom portion, a sidewall portion, and an open cavity. Another embodiment relates to a pattern generating apparatus which includes a well structure with sidewalls and a cavity configured above each conductive pixel pad. The sidewalls may include alternating layers of conductive and insulative materials. Other embodiments, aspects and feature are also disclosed.
    • 一个实施例涉及用于反射电子束光刻的动态图案发生器,其包括导电像素焊盘,围绕每个导电像素焊盘的绝缘,以将导电像素焊盘彼此电隔离,以及耦合到导电像素焊盘的导电元件, 可控地向导电像素焊盘施加电压。 导电像素焊盘有利地为杯形,其具有底部,侧壁部分和开放空腔。 另一个实施例涉及一种图案生成装置,其包括具有侧壁的阱结构和在每个导电像素垫之上配置的空腔。 侧壁可以包括交替的导电和绝缘材料层。 还公开了其它实施例,方面和特征。
    • 3. 发明授权
    • Apparatus and method for tilted particle-beam illumination
    • 倾斜粒子束照明的装置和方法
    • US07009177B1
    • 2006-03-07
    • US11040281
    • 2005-01-20
    • Marian MankosLuca GrellaDavid L. Adler
    • Marian MankosLuca GrellaDavid L. Adler
    • H01J37/26
    • H01J37/1478H01J37/29H01J2237/2538
    • One embodiment disclosed relates to an apparatus for inspecting a substrate using charged particles. The apparatus includes an illumination subsystem, an objective subsystem, a projection subsystem, and a beam separator interconnecting those subsystems. Advantageously, the illumination subsystem includes a tilt deflector configured to controllably tilt the incident beam. The tilt of the incident beam caused by the tilt deflector is magnified prior to the incident beam impinging onto the substrate. This technique allows for achieving large beam tilts at the substrate without lens aberrations caused by introducing tilt at the objective lens and without complications due to using a tiltable stage. Other embodiments are also disclosed.
    • 公开的一个实施例涉及一种使用带电粒子检查基板的装置。 该装置包括照明子系统,客观子系统,投影子系统和互连这些子系统的分束分离器。 有利地,照明子系统包括被配置为可控地倾斜入射光束的倾斜偏转器。 在入射光束撞击到基板上之前,由倾斜偏转器引起的入射光束的倾斜被放大。 该技术允许在基板处实现大的光束倾斜,而不会由于在物镜处引入倾斜而导致的透镜像差,并且由于使用可倾斜的台而不会产生并发症。 还公开了其他实施例。
    • 8. 发明授权
    • Electron beam patterning
    • 电子束图案化
    • US07958464B1
    • 2011-06-07
    • US12199922
    • 2008-08-28
    • Luca GrellaAllen M. Carroll
    • Luca GrellaAllen M. Carroll
    • G06F17/50
    • H01J37/3174B82Y10/00B82Y40/00
    • A method for creating an electron beam pattern exposure, where a pattern of shapes is generated, including at least one of lines and vias. To each shape there is assigned a set of exposure pixels and edge placement constraints. An intensity at each exposure pixel is calculated by using a simplex method, and a latent resist image location is calculated by convolving a proximity function with the pixel intensities. A shape critical dimension and a shape edge slope is statistically evaluated by applying linear regression on the locations of the calculated latent image. The electron beam pattern exposures are produced using dosages linearly optimized on a rotated pixel grid to produce the shape critical dimension and the shape edge slope.
    • 一种用于产生电子束图案曝光的方法,其中产生形状图案,其包括线和通孔中的至少一个。 对于每个形状,分配一组曝光像素和边缘放置约束。 通过使用单纯形法计算每个曝光像素的强度,并且通过将接近函数与像素强度进行卷积来计算潜像抗蚀剂图像位置。 通过对所计算的潜像的位置应用线性回归来统计评估形状临界尺寸和形状边缘斜率。 使用在旋转的像素网格上线性优化的剂量产生电子束图案曝光以产生形状临界尺寸和形状边缘斜率。