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1. 发明授权

US06905616B2 Method of releasing devices from a substrate 失效
标题翻译：从基板释放装置的方法
公开(公告)号：US06905616B2
公开(公告)日：2005-06-14
申请号：US10382562
申请日：2003-03-05
申请人： Ajay Kumar , Anisul H Khan , Sanjay M Thekdi , Sharma V Pamarthy
发明人： Ajay Kumar , Anisul H Khan , Sanjay M Thekdi , Sharma V Pamarthy
IPC分类号： B31D3/00 , B44C1/22 , B81C1/00 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/00
CPC分类号： B81C1/00952
摘要： Micro devices are formed in situ in a high density in a substrate comprising a masked silicon layer over a stop layer of a silicon compound, by anisotropically etching the desired feature in the silicon layer, overetching to form a notch at the silicon-stop layer interface, depositing a protective fluorocarbon polymer layer on the sidewalls and bottom of the etched silicon layer, and isotropically etching to separate the etched feature from the stop layer. This method avoids the problems of stiction common in other methods of forming micro devices.
摘要翻译：通过各向异性地蚀刻硅层中的所需特征，在基底上形成微孔器件，在衬底上形成掩模硅层，通过各向异性蚀刻硅层中的所需特征，过蚀刻以在硅 - 停止层界面处形成缺口，在蚀刻硅层的侧壁和底部上沉积保护性碳氟聚合物层，并进行各向同性蚀刻以将蚀刻的特征与停止层分离。这种方法避免了在其他形成微器件的方法中常见的静电问题。

2. 发明授权

US06897155B2 Method for etching high-aspect-ratio features 失效
标题翻译：蚀刻高纵横比特征的方法
公开(公告)号：US06897155B2
公开(公告)日：2005-05-24
申请号：US10219885
申请日：2002-08-14
申请人： Ajay Kumar , Anisul H. Khan , Dragan Podlesnik , Sharma V. Pamarthy , Axel Henke , Stephan Wege , Virinder Grewal
发明人： Ajay Kumar , Anisul H. Khan , Dragan Podlesnik , Sharma V. Pamarthy , Axel Henke , Stephan Wege , Virinder Grewal
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/461
CPC分类号： H01J37/32082 , H01J2237/3347 , H01L21/3065 , H01L21/30655
摘要： A method for operating a plasma reactor to etch high-aspect-ratio features on a workpiece in a vacuum chamber. The method comprises the performance of an etch process followed by a flash process. During the etch process, a first gas is supplied into the vacuum chamber, and a plasma of the first gas is maintained for a first period of time. The plasma of the first gas comprises etchant and passivant species. During the flash process, a second gas comprising a deposit removal gas is supplied into the vacuum chamber, and a plasma of the second gas is maintained for a second period of time. The DC voltage between the workpiece and the plasma of the second gas during the second period of time is significantly less than the DC voltage between the workpiece and the plasma of the first gas during the first period of time.
摘要翻译：一种用于操作等离子体反应器以蚀刻真空室中的工件上的高纵横比特征的方法。该方法包括执行闪光处理之后的蚀刻工艺。在蚀刻工艺期间，将第一气体供应到真空室中，并且第一气体的等离子体保持第一时间段。第一气体的等离子体包括蚀刻剂和钝化物质。在闪蒸过程中，将包含沉积物去除气体的第二气体供应到真空室中，并且将第二气体的等离子体保持第二时间段。在第二时间段期间，工件与第二气体的等离子体之间的直流电压明显小于在第一时间段内第一气体的工件和等离子体之间的直流电压。

3. 发明授权

US08753474B2 Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor 有权
标题翻译：感应耦合等离子体反应器中高效气体解离的方法和装置
公开(公告)号：US08753474B2
公开(公告)日：2014-06-17
申请号：US12878582
申请日：2010-09-09
申请人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
发明人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
IPC分类号： H01L21/3065 , H01J37/32 , C23C16/455 , C23C16/505 , H01L21/67
CPC分类号： H01L21/3065 , C23C16/45508 , C23C16/45563 , C23C16/45574 , C23C16/45587 , C23C16/45591 , C23C16/505 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/3244 , H01J37/32449 , H01J37/32458 , H01L21/30655 , H01L21/67069
摘要： Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
摘要翻译：本发明的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。本发明的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。

4. 发明申请

US20110073564A1 METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLE PLASMA REACTOR 有权
标题翻译：电感耦合等离子体反应器中高效气体分离的方法与装置
公开(公告)号：US20110073564A1
公开(公告)日：2011-03-31
申请号：US12878582
申请日：2010-09-09
申请人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
发明人： Roy C. Nangoy , Saravjeet Singh , Jon C. Farr , Sharma V. Pamarthy , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , C23C16/45508 , C23C16/45563 , C23C16/45574 , C23C16/45587 , C23C16/45591 , C23C16/505 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/3244 , H01J37/32449 , H01J37/32458 , H01L21/30655 , H01L21/67069
摘要： Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
摘要翻译：本发明的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。本发明的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。

5. 发明授权

US06593244B1 Process for etching conductors at high etch rates 失效
标题翻译：以高蚀刻速率蚀刻导体的工艺
公开(公告)号：US06593244B1
公开(公告)日：2003-07-15
申请号：US09659072
申请日：2000-09-11
申请人： Yiqiong Wang , Anisul Khan , Ajay Kumar , Dragan Podlesnik , Sharma V. Pamarthy
发明人： Yiqiong Wang , Anisul Khan , Ajay Kumar , Dragan Podlesnik , Sharma V. Pamarthy
IPC分类号： H01L21302
CPC分类号： C23F4/00 , H01L21/02071 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： A process for etching a pattern-masked conductor substrate anisotropically so as to obtain very high etch rates comprising adding a polymer-forming fluorocarbon gas and an etch gas at high flow rates to an etch chamber at etching pressures of 77 millitorr to 100 Torr using a high source power and bias power to the substrate support electrode to form a high density plasma. The gases can be added together, sequentially or alternately.
摘要翻译：一种用于各向异性蚀刻图案掩模的导体衬底以便获得非常高的蚀刻速率的方法，包括以77毫微伏至100托的蚀刻压力，将高聚物形成碳氟化合物气体和蚀刻气体以高流速加入蚀刻室，高源功率和偏置功率到衬底支撑电极以形成高密度等离子体。气体可以一起，依次或交替地加入。

6. 发明授权

US06979652B2 Etching multi-shaped openings in silicon 失效
标题翻译：在硅中蚀刻多形开口
公开(公告)号：US06979652B2
公开(公告)日：2005-12-27
申请号：US10118763
申请日：2002-04-08
申请人： Anisul Khan , Sharma V Pamarthy , Sanjay Thekdi , Ajay Kumar
发明人： Anisul Khan , Sharma V Pamarthy , Sanjay Thekdi , Ajay Kumar
IPC分类号： C23F1/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/30655
摘要： Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.
摘要翻译：通过交替蚀刻硅中的开口并在侧壁上沉积共形氟碳聚合物来顺序地制备可变形状的开口。该聚合物保护开口的侧壁进一步蚀刻。可以进行各向同性蚀刻以改变蚀刻特征的轮廓，并且用于从硅衬底剥离蚀刻的特征。

7. 发明授权

US06759340B2 Method of etching a trench in a silicon-on-insulator (SOI) structure 失效
标题翻译：蚀刻绝缘体上硅（SOI）结构中的沟槽的方法
公开(公告)号：US06759340B2
公开(公告)日：2004-07-06
申请号：US10143269
申请日：2002-05-09
申请人： Padmapani C. Nallan , Ajay Kumar , Anisul H. Khan , Chan-Syun David Yang
发明人： Padmapani C. Nallan , Ajay Kumar , Anisul H. Khan , Chan-Syun David Yang
IPC分类号： H01L21302
CPC分类号： H01L21/30655
摘要： Disclosed herein is a method of etching a trench in silicon overlying a dielectric material which reduces or substantially eliminates notching at the base of the trench, while reducing scalloping on the sidewalls of the trench. The method comprises etching a first portion of a trench by exposing a silicon substrate, through a patterned masking layer, to a plasma generated from a fluorine-containing gas. This etching is followed by a polymer deposition step comprising exposing the substrate to a plasma generated from a gas which is capable of forming a polymer on etched silicon surfaces. The etching and polymer deposition steps are repeated for a number of cycles, depending on the desired depth of the first portion of the trench. The final portion of the trench is etched by exposing the silicon to a plasma generated from a combination of a fluorine-containing gas and a polymer-forming gas.
摘要翻译：本文公开了一种在覆盖电介质材料的硅中蚀刻沟槽的方法，其减小或基本上消除在沟槽的基部处的凹口，同时减少沟槽侧壁上的扇形。该方法包括通过将硅衬底通过图案化掩模层暴露于由含氟气体产生的等离子体来蚀刻沟槽的第一部分。该蚀刻之后是聚合物沉积步骤，包括将衬底暴露于由能够在蚀刻的硅表面上形成聚合物的气体产生的等离子体。根据沟槽第一部分的期望深度，蚀刻和聚合物沉积步骤重复多个循环。通过将硅暴露于由含氟气体和聚合物形成气体的组合产生的等离子体来蚀刻沟槽的最后部分。

8. 发明授权

US07789918B2 Lubricity improving additive composition for low sulfur diesel fuel 有权
标题翻译：润滑改善低硫柴油燃料添加剂组成
公开(公告)号：US07789918B2
公开(公告)日：2010-09-07
申请号：US11547458
申请日：2004-08-09
申请人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
发明人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
IPC分类号： C10L1/18 , C10L1/32 , C10M169/04
CPC分类号： C10L10/08 , C10L1/18 , C10L1/1881 , C10L1/19 , C10L1/191
摘要： The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.
摘要翻译：本发明涉及一种用作低硫柴油的润滑改进剂的添加剂组合物，其包含c）0.1-10重量％衍生自式（I）的腰果壳液（CNSL酯）的酯衍生物; f）0.1-10重量％衍生自式（II）的腰果壳液的酯衍生物; g）50-95重量％的式RCOOH的游离脂肪酸，其中R表示具有12至24个碳原子的烷基/链烯基。 h）1-30重量％的通过酯化三，四，五羟基醇与羧酸如月桂酸，棕榈酸，亚油酸，蓖麻油酸等衍生的合成酯。

9. 发明申请

US20080098642A1 Lubricity Improving Additive Composition for Low Sulfur Diesel Fuel 有权
标题翻译：改善低硫柴油燃料添加剂组成的润滑性
公开(公告)号：US20080098642A1
公开(公告)日：2008-05-01
申请号：US11547458
申请日：2004-08-09
申请人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
发明人： Deepak Kumar Tuli , Ajay Kumar Arora , Shanti Prakash , Rajiv Ranjan , Krishan Kumar Swami , Ajay Kumar , Rakesh Sarin , Ram Prakash Verma , Niranjan Raghunath Raje
IPC分类号： C10L1/18
CPC分类号： C10L10/08 , C10L1/18 , C10L1/1881 , C10L1/19 , C10L1/191
摘要： The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.
摘要翻译：本发明涉及一种用作低硫柴油的润滑改进剂的添加剂组合物，其包含c）0.1-10重量％衍生自式（I）的腰果壳液（CNSL酯）的酯衍生物; f）0.1-10重量％衍生自式（II）的腰果壳液的酯衍生物; g）50-95重量％的式RCOOH的游离脂肪酸，其中R表示具有12至24个碳原子的烷基/链烯基。 h）1-30重量％的通过酯化三，四，五羟基醇与羧酸如月桂酸，棕榈酸，亚油酸，蓖麻油酸等衍生的合成酯。

10. 发明申请

US20170342086A1 Compounds and methods for the treatment of drug resistance in cancer cells against paclitaxel 审中-公开
公开(公告)号：US20170342086A1
公开(公告)日：2017-11-30
申请号：US15013616
申请日：2016-02-02
申请人： Ajay Kumar
发明人： Ajay Kumar
IPC分类号： C07D491/153 , G01N21/65 , A61K31/337 , G01N33/574 , A61K31/4741
CPC分类号： C07D491/153 , A61K31/337 , A61K31/4741 , A61K45/06 , G01N21/658 , G01N33/57496 , G01N2333/47 , G01N2333/914 , A61K2300/00
摘要： The disclosure provides compounds and methods for treating cancer by inhibiting the formation of cancer cells resistant to paclitaxel by preventing the formation of GBP1:PIM1 protein interaction during a chemotherapeutic treatment. These compounds and methods are able to treat cancer individually or in conjunction with paclitaxel.

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