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1. 发明公开

KR20070092130A METHOD AND SYSTEM FOR ENHANCED LITHOGRAPHIC PATTERNING 审中-公开
标题翻译：用于增强平台的方法和系统
公开(公告)号：KR20070092130A
公开(公告)日：2007-09-12
申请号：KR20070022072
申请日：2007-03-06
申请人： ASML NETHERLANDS BV
发明人： LALBAHADOERSING SANJAY , MUSA SAMI
IPC分类号： H01L21/027
CPC分类号： G03F7/70466 , G03F7/70025
摘要： A method and a system for enhanced lithographic patterning are provided to print a pattern having a feature interval less than a printable minimum interval within a hard mask by using a single exposure method. A patterned radiation beam is applied to a hard mask layer provided on a substrate. First parts of the hard mask layer are exposed by using a first dose of radiation necessary for enhancing etch characteristics of the first parts from the patterned radiation beam. Second parts different from the first parts of the hard mask layer are exposed by using a second dose of radiation necessary for enhancing etch characteristics of the second parts from the patterned radiation beam. An etch process for the hard mask layer is performed. The first parts and the second parts are removed. Parts of the hard mask layer except the first and second parts are not damaged.
摘要翻译：提供了用于增强平版印刷图案的方法和系统，以通过使用单一曝光方法来打印具有小于硬掩模内的可打印最小间隔的特征间隔的图案。将图案化的辐射束施加到设置在基板上的硬掩模层。通过使用用于从图案化的辐射束增强第一部分的蚀刻特性所需的第一剂量的辐射来暴露硬掩模层的第一部分。与硬掩模层的第一部分不同的第二部分通过使用从图案化的辐射束增强第二部分的蚀刻特性所需的第二剂量的辐射来暴露。执行用于硬掩模层的蚀刻工艺。第一部分和第二部分被去除。除了第一和第二部分之外的硬掩模层的部分不被损坏。

2. 发明专利

JP2007266594A Enhanced lithography patterning process and system 有权
标题翻译：增强雕刻方法和系统
公开(公告)号：JP2007266594A
公开(公告)日：2007-10-11
申请号：JP2007048814
申请日：2007-02-28
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： LALBAHADOERSING SANJAY , MUSA SAMI
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70466
摘要： PROBLEM TO BE SOLVED: To provide a plurality of features provided by a single exposing process and characterized by an about half interval to a hard mask using a single hard mask etching process and without a photoresist treatment for defining the hard mask. SOLUTION: This system and process is a double patterning system and process using a carbon-based hard mask. This double patterning system provides a means for forming a hard mask feature with a feature interval less than a minimum interval with which the hard mask can be printed according to a single exposure, by of a single hard mask etching process. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供通过单个曝光工艺提供的多个特征，并且使用单个硬掩模蚀刻工艺并且没有用于限定硬掩模的光致抗蚀剂处理，其特征在于对于硬掩模的约一半的间隔。解决方案：该系统和工艺是使用碳基硬掩模的双重图案化系统和工艺。该双重图案化系统提供了通过单个硬掩模蚀刻工艺形成具有小于最小间隔的特征间隔的硬掩模特征的装置，通过单个曝光可以通过单个曝光来印刷硬掩模。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2009147328A Alignment method, alignment system, and product with alignment mark 有权
标题翻译：对准方法，对准系统和具有对准标记的产品
公开(公告)号：JP2009147328A
公开(公告)日：2009-07-02
申请号：JP2008309352
申请日：2008-12-04
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： MUSA SAMI , FRANCISCUS VAN HAREN RICHARD J , LALBAHADOERSING SANJAY , XIUHONG WEI
IPC分类号： H01L21/027 , G01B11/00 , G03F7/20
CPC分类号： G03F9/7076
摘要： PROBLEM TO BE SOLVED: To provide a product with an alignment mark that enables spatially varying reflective properties by using a pattern of fine lines for different polarization components for radiation of selectable orders of diffraction. SOLUTION: The position of a product is measured by using an alignment mark on the product. Radiation is transmitted toward the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark includes a set of mutually parallel conductor tracks from which the diffracted radiation is collected, and the pattern is determined by a pattern in which the pitch between successive tracks is varied as a function of position along the surface of the product. Thus, for example, the pattern includes alternating first and second areas having a first pitch value and a second pitch value respectively. Because the tracks in different parts of the pattern, such as the first and second areas, are parallel to each other, improved measurements are possible. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有对准标记的产品，其通过使用用于不同偏振分量的细线图案来实现空间变化的反射特性，用于可选择的衍射级数的辐射。
解决方案：产品的位置通过使用产品上的对准标记来测量。辐射朝向对准标记传播并被对准标记中的图案衍射。位置信息由衍射辐射的相位关系确定。对准标记包括一组相互平行的导体轨道，衍射辐射从该导体轨道收集，并且该图案由其中连续迹线之间的间距作为沿着产品表面的位置的函数而变化的图案确定。因此，例如，该图案分别包括具有第一间距值和第二间距值的交替的第一和第二区域。由于图案的不同部分中的轨迹（例如第一和第二区域）彼此平行，因此可以进行改进的测量。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008211247A Marker structure for lithography, lithographic projection apparatus including such marker structure, and method for substrate alignment using such a marker structure 有权
标题翻译：用于平面图的标记结构，包括这种标记结构的平面投影装置以及使用这种标记结构的基板对准方法
公开(公告)号：JP2008211247A
公开(公告)日：2008-09-11
申请号：JP2008119913
申请日：2008-05-01
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VAN HAREN RICHARD JOHANNES FRA , HINNEN PAUL CHRISTIAAN , LALBAHADOERSING SANJAY , MEGENS HENRY , VAN DER SCHAAR MAURITS
IPC分类号： G01B11/00 , H01L21/027 , G01B11/02 , G01B21/00 , G02B5/18 , G03F7/00 , G03F7/20 , G03F9/00 , G03F9/02 , H01L21/3205 , H01L21/68 , H01L23/52 , H01S3/00
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： PROBLEM TO BE SOLVED: To provide a marker structure on a substrate for optical alignment of the substrate including a plurality of first structural elements and a plurality of second structural elements. SOLUTION: For use, the marker structure enables optical alignment by providing at least one light beam directed on the marker structure, detecting light received from the marker structure via a sensor, and obtaining alignment information from the detected light, the alignment information including information relating a substrate position to the sensor. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了在包括多个第一结构元件和多个第二结构元件的基板的光学对准的基板上提供标记结构。解决方案：为了使用，标记结构通过提供指向标记结构的至少一个光束来实现光学对准，通过传感器检测从标记结构接收的光，以及从检测到的光获得对准信息，对准信息包括将衬底位置与传感器相关的信息。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007214560A Marker structure for lithography, lithographic projection device provided with such marker structure for lithography, and method of aligning substrate using such marker structure for lithography 有权
标题翻译：用于平面图的标记结构，具有这样的标记结构的平面投影装置，以及使用这种标记结构对基底进行刻蚀的方法
公开(公告)号：JP2007214560A
公开(公告)日：2007-08-23
申请号：JP2007009156
申请日：2007-01-18
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VAN HAREN RICHARD JOHANNES FRA , HINNEN PAUL CHRISTIAAN , LALBAHADOERSING SANJAY , MEGENS HENRY , VAN DER SCHAAR MAURITS
IPC分类号： G01B11/00 , H01L21/027 , G01B11/02 , G01B21/00 , G02B5/18 , G03F7/00 , G03F7/20 , G03F9/00 , G03F9/02 , H01L21/3205 , H01L21/68 , H01L23/52 , H01S3/00
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： PROBLEM TO BE SOLVED: To provide a marker structure that allows correction of a phase depth in such a way that negative interference within a diffraction pattern is prevented, a lithographic projection device provided with such a marker structure for lithography, and a method of aligning a substrate using such a marker structure for lithography. SOLUTION: The marker structure is characterized in that: a first structural element has a first reflecting surface on a first level; a second structural element is substantially non-reflecting; a second reflecting surface is disposed on a second level lower than the first level, wherein a separation between the first and second reflecting surfaces determines a phase depth condition for the detected light; and recesses R1, R2, R3 are provided in the second reflecting surface; thereby modifying the phase depth condition. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种标记结构，其允许校正相位深度，使得防止衍射图案中的负干涉，设置有这种用于光刻的标记结构的光刻投影装置和方法使用这种用于光刻的标记结构来对准衬底。标记结构的特征在于：第一结构元件在第一层上具有第一反射表面; 第二结构元件基本上不反射; 第二反射表面设置在比第一水平低的第二水平面上，其中第一和第二反射表面之间的间隔确定检测到的光的相位深度状态; 并且凹部R1，R2，R3设置在第二反射面上; 从而修改相位深度条件。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2010004040A Lithographic apparatus 有权
标题翻译： LITHOGRAPHIC设备
公开(公告)号：JP2010004040A
公开(公告)日：2010-01-07
申请号：JP2009140853
申请日：2009-06-12
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VITALLY PROSYENTSOV , LALBAHADOERSING SANJAY , MUSA SAMI , LEE HYUN-WOO
IPC分类号： H01L21/027
CPC分类号： G03B27/52 , G03F7/70341 , G03F7/707 , G03F7/7085
摘要： PROBLEM TO BE SOLVED: To provide an improved lithographic apparatus in which at least one of the disadvantages in the conventional techniques has been removed or alleviated.
SOLUTION: A substrate stage of an immersion-type lithographic apparatus configured to project a patterned radiation beam from a patterning device onto a substrate is provided to hold the substrate and comprises at least one sensor for sensing the patterned radiation beam. The sensor includes, at least a partially transmissive layer having a front surface facing the incoming radiation beam and a back surface opposite to the front surface, and the back surface is provided with at least one sensor mark to be exposed to the radiation beam passing through the transmissive layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种改进的光刻设备，其中传统技术中的至少一个缺点已被消除或减轻。解决方案：设置浸没式光刻设备的衬底台，其被配置为将图案化的辐射束从图案形成装置投影到衬底上以保持衬底并且包括用于感测图案化的辐射束的至少一个传感器。传感器包括至少一个具有面向入射辐射束的前表面和与前表面相对的后表面的部分透射层，并且背表面设置有至少一个传感器标记，以暴露于通过的辐射束透射层。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009302534A Sub-segmented alignment mark arrangement 有权
标题翻译：分标签对齐标记安排
公开(公告)号：JP2009302534A
公开(公告)日：2009-12-24
申请号：JP2009135670
申请日：2009-06-05
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： MUSA SAMI , FRANCISCUS VAN HAREN RICHARD J , LALBAHADOERSING SANJAY
IPC分类号： H01L21/027
CPC分类号： G03B27/54 , G03F9/7076 , H01L23/544 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an arrangement of an alignment mark that has improved compatibility with extreme dipolar illumination settings and also with less extreme settings to be used in the other patterning step during lithography processing.
SOLUTION: An alignment mark on a substrate includes a periodic arrangement of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic arrangement is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-arrangement with a first sub-pitch and each second element has a second periodic sub-arrangement with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength λ is different from the optical property of the second element. The overall pitch is larger than the wavelength λ, and each of the first and the second sub-pitch is smaller than the wavelength.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种对准标记的布置，其具有改进的与极性偶极照明设置的兼容性，并且还提供在光刻处理期间在另一图案化步骤中使用的较不极端的设置。解决方案：衬底上的对准标记包括多个第一元件和多个第二元件的周期性布置。元件沿第一方向以交替的重复序列排列。周期性布置的整体间距等于第一元件的宽度和第一元件在第一方向上的宽度之和。每个第一元件具有具有第一子间距的第一周期性子布置，并且每个第二元件具有带有第二子间距的第二周期性子布置。用于与具有波长λ的辐射束相互作用的第一元件的光学性质不同于第二元件的光学性质。总间距大于波长λ，第一和第二子间距都小于波长。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2004282019A Lithographic marker structure, lithographic projection apparatus comprising such lithographic marker structure, and method for substrate alignment using such lithographic marker structure 有权
公开(公告)号：JP2004282019A
公开(公告)日：2004-10-07
申请号：JP2003366659
申请日：2003-09-19
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： VAN HAREN RICHARD JOHANNES FRA , HINNEN PAUL CHRISTIAAN , LALBAHADOERSING SANJAY , MEGENS HENRY , VAN DER SCHAAR MAURITS
IPC分类号： G01B11/00 , G01B11/02 , G01B21/00 , G02B5/18 , G03F7/00 , G03F7/20 , G03F9/00 , G03F9/02 , H01L21/027 , H01L21/3205 , H01L21/68 , H01L23/52 , H01S3/00
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： PROBLEM TO BE SOLVED: To provide a marker structure on a substrate for optical alignment of the substrate, wherein the marker structure comprises a plurality of first structural elements and a plurality of second structural elements. SOLUTION: In using the marker structure, the optical alignment is performed by; providing at least one light beam directed to the marker structure; detecting the light received from the marker structure by a sensor; and determining alignment information from the detected light, wherein the alignment information includes information relating a position of the substrate to the sensor. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

SG125923A1 Lithographic marker structure, lithographic projection apparatus comprising such a lithographic marker structure and method for substrate alignment using such a lithographic marker structure 未知
公开(公告)号：SG125923A1
公开(公告)日：2006-10-30
申请号：SG200305609
申请日：2003-09-19
申请人： ASML NETHERLANDS BV
发明人： HAREN VAN RICHARD JOHANNES FRA , HINNEN PAUL CHRISTIAAN , LALBAHADOERSING SANJAY , MOS EVERHARDUS CORNELIS , MEGENS HENRY , SCHAAR VAN DER MAURITS , HUIJBREGTSE JEROEN
IPC分类号： G01B11/00 , G01B11/02 , G01B21/00 , G01D5/00 , G02B5/18 , G03F7/00 , G03F7/20 , G03F9/00 , G03F9/02 , H01L21/027 , H01L21/3205 , H01L21/68 , H01L23/52 , H01S3/00
摘要： Marker structure on a substrate for optical alignment of said substrate, said marker structure comprising a plurality of first structural elements and a plurality of second structural elements, in use said marker structure allowing said optical alignment based upon providing at least one light beam directed on said marker structure, - detecting light received from said marker structure at a sensor, - determining alignment information from said detected light, said alignment information comprising information relating a position of said substrate to said sensor.

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