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1. 发明专利

JP2012119680A Method of operating patterning device and lithographic apparatus 有权
标题翻译：操作设备和平面设备的方法
公开(公告)号：JP2012119680A
公开(公告)日：2012-06-21
申请号：JP2011255744
申请日：2011-11-24
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VITALLY PROSYENTSOV , VENEMA WILLEM JURIANUS , SEGEL TROOST KALS , VAN DER WEEREN ADRIANUS MARTINUS
IPC分类号： H01L21/027 , G03F9/00 , H01L21/68
CPC分类号： G03F7/705 , G03F1/44 , G03F7/70133 , G03F7/70783 , G03F7/70875
摘要： PROBLEM TO BE SOLVED: To provide a measuring method of local distortion of a reticle, which is balanced against influence on throughput and cost of an apparatus.SOLUTION: Distortion is calculated using a plurality of reference marks (236) in a peripheral portion of a reticle and measuring deviations in the relative positions of peripheral marks over time. A system of an equation which associates measured positions of pairs of the peripheral marks with dilation of cells disposed along a line (s, s1, s2) connecting the pairs of the measured marks, that is an equation to calculate the dilation of each cell, can be solved. Local positional deviations of the position (320) can be calculated by combining dilation calculated values for subareas between at least one measured peripheral mark and the position. Corrections can be applied in accordance with the result of the calculation in order to reduce overlay errors for instance. Energy may be applied to the patterning device (for example, by thermal input or mechanical actuators) to modify a distribution of the local positional deviations and improve correction.
摘要翻译：要解决的问题：提供一种掩模版的局部变形的测量方法，其平衡于对设备的生产量和成本的影响。解决方案：使用掩模版的周边部分中的多个参考标记（236）计算失真，并测量周边标记随时间的相对位置的偏差。将周边标记对的测量位置与连接测量标记对的线（s，s1，s2）设置的单元的扩张相关联的等式的系统，即计算每个单元的扩张的方程式，可以解决可以通过将至少一个测量的外围标记与位置之间的子区域的扩张计算值组合来计算位置（320）的局部位置偏差。可以根据计算结果应用校正，以减少叠加错误。可以将能量施加到图案形成装置（例如，通过热输入或机械致动器）以修改局部位置偏差的分布并改善校正。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2010004040A Lithographic apparatus 有权
标题翻译： LITHOGRAPHIC设备
公开(公告)号：JP2010004040A
公开(公告)日：2010-01-07
申请号：JP2009140853
申请日：2009-06-12
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： VITALLY PROSYENTSOV , LALBAHADOERSING SANJAY , MUSA SAMI , LEE HYUN-WOO
IPC分类号： H01L21/027
CPC分类号： G03B27/52 , G03F7/70341 , G03F7/707 , G03F7/7085
摘要： PROBLEM TO BE SOLVED: To provide an improved lithographic apparatus in which at least one of the disadvantages in the conventional techniques has been removed or alleviated.
SOLUTION: A substrate stage of an immersion-type lithographic apparatus configured to project a patterned radiation beam from a patterning device onto a substrate is provided to hold the substrate and comprises at least one sensor for sensing the patterned radiation beam. The sensor includes, at least a partially transmissive layer having a front surface facing the incoming radiation beam and a back surface opposite to the front surface, and the back surface is provided with at least one sensor mark to be exposed to the radiation beam passing through the transmissive layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种改进的光刻设备，其中传统技术中的至少一个缺点已被消除或减轻。解决方案：设置浸没式光刻设备的衬底台，其被配置为将图案化的辐射束从图案形成装置投影到衬底上以保持衬底并且包括用于感测图案化的辐射束的至少一个传感器。传感器包括至少一个具有面向入射辐射束的前表面和与前表面相对的后表面的部分透射层，并且背表面设置有至少一个传感器标记，以暴露于通过的辐射束透射层。版权所有（C）2010，JPO＆INPIT

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